CN202616240U - Crystalline silicon solar-energy MWT cell - Google Patents
Crystalline silicon solar-energy MWT cell Download PDFInfo
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- CN202616240U CN202616240U CN 201220126341 CN201220126341U CN202616240U CN 202616240 U CN202616240 U CN 202616240U CN 201220126341 CN201220126341 CN 201220126341 CN 201220126341 U CN201220126341 U CN 201220126341U CN 202616240 U CN202616240 U CN 202616240U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model provides a crystalline silicon solar-energy MWT cell. Hole connecting wires in the shape of two bevel edges of a trapezoid are formed by connecting quartering points with one-sixth sectioning points. A P point shifts to an edge at the maximum of 7 millimeter. A hole is arranged for every three or four grid lines. The diameter of the hole is 80 to 120 micrometers. The width of fine grid is 50 to 90 micrometers. The number of the grid lines is 65 to 80. Hole-filling grid lines in the front side are distributed interruptedly and the intervals depend on the intervals of the fine grids. The width of the hole-filling grid lines in a group A is 100 to 150 micrometers. The width of positive electrode and negative electrode on the back side is 0.8 to 1.5 mm. An interval between the negative electrode on the back side and a back field is 0.5 to 1 micrometer. The periphery of the back side is isolated with the positive electrode and the negative electrode. The distance between a periphery isolating line and the periphery of a silicon sheet is 100 to 300 micrometers. An isolating line of the negative electrode on the back side and the back field is on a middle line between the negative electrode on the back side and the back field. A shading area on the surface of the crystalline silicon solar-energy MWT cell is reduced to about 3 percents of an MWT cell from 5 to 7 percents of a traditional H-type cell, thereby realizing an aim of improving the efficiency and reducing the cost.
Description
Technical field
The utility model relates to a kind of crystal silicon solar MWT battery.
Background technology
Crystal silicon solar batteries utilizes the TRT that luminous energy be converted into electric energy of crystalline silicon as material.
In the face of more and more serious global energy crisis and weather environmental issue, must become selection as the solar energy power generating of clean energy resource.The solar energy power generating cost is higher than traditional thermal power generation at present, becomes the target of whole industry in order to realize the solar energy power generating parization, to raise the efficiency reducing cost, and raises the efficiency most important link in the solar cell link.
The scheme that improves crystal silicon solar batteries efficient is a lot, and the MWT battery technology is one of the most feasible technology at present.The existing MWT battery technology of existing two kinds of maturations in the industry.
16 hole MWT batteries of the Dutch ECN design of technology (1), battery structure is: positive evenly the distribution by the individual petal figure of 16 (4X4) forms, and 16 holes are in the petal center, and the electric current that petal is collected is transferred to the disk place that the back side is communicated with via the hole; Back side electric current is collected by the individual back electrode pad of 15 (3X5).
Three row cellular type MWT batteries of the German ISE design of technology (2); Battery structure is: the thin grid line design (main grid is removed) that positive employing is traditional; Through the through hole under the thin grid positive current delivery is located to the grid line (or disk) at the back side, lead to the hole site is the same with traditional three main grid batteries.Back side electric current is collected through four row's (4X5) disks.
The shortcoming of technology (1):
Follow-up component technology is complicated, and such as the custom-designed PCB printed circuit of needs backboard and the accurate EVA of punching contraposition, the equipment input cost increases.To this kind 16 hole designs, the SIBCO of equipment manufacturers has made supporting EUROTRON equipment, expensive.
The interconnection of battery sheet realizes that on circular pad this pad need be aimed at the hole on the EVA, owing to the aligning accuracy problem of machine, certainly will influence the yields of its assembly.
The shortcoming of technology (2):
The positive edge isolation that realizes causes the damage of isolation place PN junction, reduces light-receiving area.
Edge isolation and positive and negative electrode are isolated separately, otherwise increase a laser equipment, increase cost; Otherwise in a laser equipment, realize turning over sheet, reduce productivity ratio.
Disk adopts insulating cement with the isolation of back of the body field, when welding and lamination, because the problem of being heated and pushing causes latent splitting and fragment, the defective products increase easily.
Summary of the invention
The purpose of the utility model mainly is in order to solve the deficiency of prior art, a kind of crystal silicon solar MWT battery to be provided, and makes the interconnection and the traditional welding process compatible of electrode to reduce MWT battery component packaging cost, quickens the industrialization of MWT battery.
A kind of crystal silicon solar MWT battery, the font distribution of electrodes: splayed hole line is that the fourth class branch (0) of battery sheet connects six Along ents (P), and on the basis; The O point is to the centre; The P point is to the maximum 7mm of edge offset, and average 3-4 root grid line is made a call to a hole, aperture 80-120um; Thin grid width 50-90um, grid number of lines 65-80; Positive filling perforation grid line is interrupted distribution, and spacing depends on thin grid (4) spacing, A group filling perforation grid line (5) width 100-150um, B and C group filling perforation grid line (5) width 150-250um; Back side positive electrode (1) and back side negative electrode (2) width 0.8-1.5mm, back side negative electrode (2) and the back of the body (3) spacing 0.5-1mm; The isolation of dorsal edge (6) and positive and negative electrode (7), edge isolation linear distance silicon chip edge 100-300um, the shielding wire of back side negative electrode (2) He Beichang (3) is in the center line of distance between the two; The width 15-30um of shielding wire is about degree of depth 10um.
A kind of crystal silicon solar MWT battery production method contains following steps: at first on naked silicon chip, carry out splayed distribution laser drilling, then carry out the battery blade technolgy: making herbs into wool, spread, go PSG, PECVD, silk screen printing, sintering, laser to isolate.Silk-screen section step is: 1. simultaneously printed back positive electrode (1) and back side negative electrode (2); 2. electric field (3) is carried on the back in printing; 3. print front gate line (4) and positive filling perforation grid line (5) simultaneously.
How the utility model simplifies MWT battery component packaging technology if being primarily aimed at, reduce the existing high equipment input of MWT battery component; And edge laser isolated change into the back side, increase light-receiving area, raise the efficiency.
The utility model has the advantages that:
1. splayed electrode design;
Realize the interconnection of battery easily,, reduce high equipment input, quicken the MWT battery industryization with the traditional welding process compatible;
2. edge isolation is realized at the back side;
Change edge isolation into the back side from the front, increase front PN junction area, increase light-receiving area, promote battery sheet efficient;
3. the isolation of edge and positive and negative electrode is realized at the back side simultaneously;
Edge isolation and electrode isolation are placed on one procedure, practice thrift the production time, boost productivity.
Description of drawings
When combining accompanying drawing to consider; Through with reference to following detailed, can more completely understand the utility model better and learn wherein many attendant advantages easily, but accompanying drawing described herein is used to provide the further understanding to the utility model; Constitute the part of the utility model; Illustrative examples of the utility model and explanation thereof are used to explain the utility model, do not constitute the improper qualification to the utility model, like figure wherein:
Fig. 1 is the MWT battery electrode structure front description sketch map of the utility model;
Fig. 2 is the MWT battery electrode structure back side pictorial diagram of the utility model;
Fig. 3 is the punching and the isolation pattern sketch map of the MWT cell backside of the utility model;
Fig. 4 is the electrode interconnection structural representation of the utility model;
Fig. 5 is the splayed design parameter sketch map of the utility model.
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Embodiment
Obviously, the many modifications made based on the aim of the utility model of those skilled in the art and the variation protection range that belongs to the utility model.
Embodiment 1: like Fig. 1, Fig. 2, Fig. 3, Fig. 4, shown in Figure 5,
A kind of crystal silicon solar MWT battery production method contains following steps: at first on naked silicon chip, carry out splayed distribution laser drilling, then carry out the battery blade technolgy: making herbs into wool, spread, go PSG, PECVD, silk screen printing, sintering, laser to isolate.Silk-screen section step is: 1. simultaneously printed back positive electrode (1) and back side negative electrode (2); 2. electric field (3) is carried on the back in printing; 3. print front gate line (4) and positive filling perforation grid line (5) simultaneously.
1, the maximum characteristics of said punching figure are splayeds, and are as shown in Figure 2, and middle A group about 10 holes, hole distribute downwards from the silicon chip central vertical, and C and B group about 25 holes, hole are on the splayed.Average 3-4 root grid line is made a call to a hole, aperture 80-120um.
2, line design in said splayed hole is that the fourth class branch (O) of battery sheet connects six Along ents (P), and on the basis, O point is to the centre, and the P point is to edge offset maximum 7mm.
3, said front description design is very little with traditional graph design difference, has just eliminated positive main grid, has avoided producer to design front description again.The thin grid width 50-90um of design, grid number of lines 65-80.
4, the filling perforation grid line in said front is interrupted distribution, and spacing depends on thin grid (4) spacing, and the design of width is relevant with the position, like A group filling perforation grid line (5) width 100-150um, and B and C group filling perforation grid line (5) width 150-250um, the average shared hole of 3-4 root grid line.
5, said back side positive electrode (1) and back side negative electrode (2) width 0.8-1.5mm, back side negative electrode (2) and the back of the body (3) spacing 0.5-1mm.
6, the isolation of said dorsal edge (6) and positive and negative electrode (7), edge isolation linear distance silicon chip edge 100-300um, back side negative electrode (2) is in the center line of distance between the two with the shielding wire of the back of the body (3).The width 15-30um of shielding wire is about degree of depth 10um.
A kind of crystal silicon solar MWT battery, the splayed distribution of electrodes: line design in splayed hole is that the fourth class branch (O) of battery sheet connects six Along ents (P), and on the basis, the O point is to the centre, the P point sees Fig. 5 for details to the maximum 7mm of edge offset; Average 3-4 root grid line is made a call to a hole, aperture 80-120um; The front description design is very little with traditional graph design difference, has just eliminated positive main grid, the thin grid width 50-90um of design, grid number of lines 65-80; Positive filling perforation grid line is interrupted distribution, and spacing depends on thin grid (4) spacing, and the design of width is relevant with the position, like A group filling perforation grid line (5) width 100-150um, and B and C group filling perforation grid line (5) width 150-250um; Back side positive electrode (1) and back side negative electrode (2) width 0.8-1.5mm, back side negative electrode (2) and the back of the body (3) spacing 0.5-1mm; The isolation of dorsal edge (6) and positive and negative electrode (7), edge isolation linear distance silicon chip edge 100-300um, back side negative electrode (2) is in the center line of distance between the two with the shielding wire of the back of the body (3).The width 15-30um of shielding wire is about degree of depth 10um.
Embodiment 2:
Said MWT battery is realized the conducting of perforated electrodes up and down through unique splayed distribution hole knockout, and the battery blade technolgy is following: after having openning hole on the nude film, carry out making herbs into wool, spread, go PSG, PECVD, silk screen printing, sintering, laser isolate.Silk-screen section step is: 1. simultaneously printed back positive electrode (1) and back side negative electrode (2); 2. electric field (3) is carried on the back in printing; 3. print front gate line (4) and positive filling perforation grid line (5) simultaneously.The interconnection of battery sheet realizes entirely overleaf; Adopt traditional welding procedure; Back side negative electrode (or back side negative electrode) from back side negative electrode (or back side negative electrode) series welding of battery sheet 1 to battery sheet 2; Realize the highly compatible with traditional components technology, solved the high problem of assembly cost of existing market MWT battery.The shading area of battery surface drops to about 3% of MWT battery from the 5-7% of traditional H type battery, raises the efficiency the purpose that reduces cost thereby reach.
This MWT battery electrode mentality of designing mainly contains 3 points:
1. splayed electrode design;
Realize the interconnection of battery easily,, reduce high equipment input, quicken the MWT battery industryization with the traditional welding process compatible;
2. edge isolation is realized at the back side;
Change edge isolation into the back side from the front, increase front PN junction area, increase light-receiving area, promote battery sheet efficient;
3. the isolation of edge and positive and negative electrode is realized at the back side simultaneously;
Edge isolation and electrode isolation are placed on one procedure, practice thrift the production time, boost productivity.
As stated, the embodiment of the utility model has been carried out explanation at length, but as long as break away from the inventive point and the effect of the utility model in fact a lot of distortion can not arranged, this will be readily apparent to persons skilled in the art.Therefore, such variation also all is included within the protection range of the utility model.
Claims (1)
1. crystal silicon solar MWT battery is characterized in that the splayed distribution of electrodes: splayed hole line is that the fourth class branch (O) of battery sheet connects six Along ents (P); And on the basis, the O point is to the centre, and the P point is to the maximum 7mm of edge offset; Average 3-4 root grid line is made a call to a hole, aperture 80-120um; Thin grid width 50-90um, grid number of lines 65-80; Positive filling perforation grid line is interrupted distribution, and spacing depends on thin grid (4) spacing, A group filling perforation grid line (5) width 100-150um, B and C group filling perforation grid line (5) width 150-250um; Back side positive electrode (1) and back side negative electrode (2) width 0.8-1.5mm, back side negative electrode (2) and the back of the body (3) spacing 0.5-1mm; The isolation of dorsal edge (6) and positive and negative electrode (7), edge isolation linear distance silicon chip edge 100-300um, back side negative electrode (2) is in the center line of distance between the two with the shielding wire of the back of the body (3); The width 15-30um of shielding wire, degree of depth 10um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220126341 CN202616240U (en) | 2012-03-29 | 2012-03-29 | Crystalline silicon solar-energy MWT cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220126341 CN202616240U (en) | 2012-03-29 | 2012-03-29 | Crystalline silicon solar-energy MWT cell |
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| CN202616240U true CN202616240U (en) | 2012-12-19 |
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| CN 201220126341 Expired - Fee Related CN202616240U (en) | 2012-03-29 | 2012-03-29 | Crystalline silicon solar-energy MWT cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637773A (en) * | 2012-03-29 | 2012-08-15 | 北京吉阳技术股份有限公司 | Crystalline silicon solar Metal Wrap Through (MWT) battery and manufacturing method thereof |
-
2012
- 2012-03-29 CN CN 201220126341 patent/CN202616240U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637773A (en) * | 2012-03-29 | 2012-08-15 | 北京吉阳技术股份有限公司 | Crystalline silicon solar Metal Wrap Through (MWT) battery and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121219 Termination date: 20210329 |
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| CF01 | Termination of patent right due to non-payment of annual fee |