CN202600321U - TFT-LCD array substrate, display panel and display device - Google Patents
TFT-LCD array substrate, display panel and display device Download PDFInfo
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- CN202600321U CN202600321U CN 201220279617 CN201220279617U CN202600321U CN 202600321 U CN202600321 U CN 202600321U CN 201220279617 CN201220279617 CN 201220279617 CN 201220279617 U CN201220279617 U CN 201220279617U CN 202600321 U CN202600321 U CN 202600321U
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- tft
- data line
- grid line
- lcd array
- array base
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Abstract
The utility model discloses a TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate, a display panel and a display device, relates to the technical field of liquid crystal displays and ensures that broken wires can be repaired by adopting a simpler method so as to shorten the production period. The TFT-LCD array substrate comprises a grid line and a data line which are formed on a substrate, and is characterized by further comprising a conductive black matrix consisting of a grid line position bar right above the grid line and a data line position bar right above the data line. The display panel comprises the TFT-LCD array substrate and a color film substrate, wherein the color film substrate comprises a plurality of pixel color filter films used for color filtering and respectively corresponding to pixels; and the grid line position bar and the data line position bar of the black matrix exactly faces to the position between the adjacent pixel color filter films. The display device employs the display panel.
Description
Technical field
The utility model relates to the LCD Technology field, relates in particular to a kind of TFT-LCD array base palte, display panel and display device thereof.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display; TFT-LCD) receive much concern owing to having characteristics such as volume is little, low in energy consumption, radiationless; In the FPD field, occupied leading position, be applied in all trades and professions widely.In the actual manufacture process of TFT-LCD; It is bad or broken data wire is bad grid line broken string inevitably can to occur; General restorative procedure commonly used is that plated metal is repaired at the broken string place, but adopts this method to need extra depositing operation, can cause the prolongation of production cycle.
The utility model content
The embodiment of the utility model provides a kind of TFT-LCD array base palte, display panel and display device thereof, can break through simple more method reparation, thereby reduce the production cycle.
For solving the problems of the technologies described above, the embodiment of the utility model adopts following technical scheme:
A kind of TFT-LCD array base palte comprises: grid line that on said substrate, forms and data line also comprise: conductive black matrix, this black matrix is made up of with the data line bit bar that is positioned at directly over the data line the grid line position bar that is positioned at directly over the grid line.
Said grid line position bar and data line bit bar include insulation strip and the bus that is formed by conductive material that is positioned at above the insulation strip.
The material of said insulation strip is a black resin.
Also comprise the electric insulation layer that is positioned at said black matrix below, this electric insulation layer is positioned at said grid line and data line top; Said grid line position bar and data line bit bar are formed by the bus that conductive material forms.
The thickness of said bus is
Said conductive material is one of in chromium, tungsten, titanium, thallium, molybdenum, aluminium, the copper or the alloy of combination in any.
A kind of display panel comprises above-mentioned TFT-LCD array base palte and color membrane substrates, and said color membrane substrates includes a plurality of pixel colour filter films that are used for colour filter and the corresponding pixel of difference; The grid line position bar of said black matrix and data line bit bar all are right against position between the adjacent pixels colour filter film.
A kind of display device comprises above-mentioned display panel.
The utility model embodiment is through forming conductive black matrix on the TFT-LCD array base palte; When grid line or data line generation broken string; Directly utilize the bus in the conductive black matrix to repair broken string; Need extra depositing operation to compare with prior art, restorative procedure is simpler, thereby has reduced the production cycle.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiment of the utility model, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the floor map of TFT-LCD array base palte among the utility model embodiment;
Fig. 2 be among Fig. 1 A-A to a kind of sectional view;
Fig. 3 be among Fig. 1 A-A to another kind of sectional view;
The floor map of TFT-LCD array base palte among the utility model embodiment when Fig. 4 breaks for repairing grid line;
The floor map of TFT-LCD array base palte among the utility model embodiment when Fig. 5 is in grid line and data line crossover location for broken string;
The floor map of TFT-LCD array base palte among the utility model embodiment when Fig. 6 breaks for the repair data line;
Fig. 7 is the floor map after the TFT-LCD array base palte composition technology first time among the utility model embodiment;
Fig. 8 be among Fig. 7 A-A to sectional view;
Fig. 9 is the floor map after the TFT-LCD array base palte composition technology second time among the utility model embodiment;
Figure 10 be among Fig. 9 A-A to sectional view;
Figure 11 is the TFT-LCD array base palte floor map after the composition technology for the third time among the utility model embodiment;
Figure 12 be among Figure 11 A-A to sectional view.
Description of reference numerals:
The 1-grid; The 2-gate insulator; The 3-semiconductor layer; The 4-doping semiconductor layer; The 5-source electrode; The 6-drain electrode; The conductive black matrix of 7-; The 7a-insulation strip; The 7b-bus; The 7c-insulation course; The 8-pixel electrode; The 10-glass substrate; The 11-grid line; The 12-data line; The 13-thin film transistor (TFT); 20-broken string place; The 21-weld; The 22-otch.
Embodiment
To combine the accompanying drawing among the utility model embodiment below, the technical scheme among the utility model embodiment is carried out clear, intactly description, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1; The utility model embodiment provides a kind of TFT-LCD array base palte, comprising: the grid line 11 that on substrate, forms, data line 12, thin film transistor (TFT) 13 and pixel electrode 8, wherein; Grid line 11 is vertical each other with data line 12; And limited pixel region, and pixel electrode 8 is arranged in the pixel region, and grid line 11 is used for to thin film transistor (TFT) 13 start signal being provided; Data line 12 is used for to pixel electrode 8 data-signal being provided, and thin film transistor (TFT) 13 comprises: grid 1, source electrode 5 and drain 6.Above-mentioned array base palte also comprises: conductive black matrix 7, this black matrix 7 is made up of with the data line bit bar that is positioned at directly over the data line 12 the grid line position bar that is positioned at directly over the grid line 11.
Alternatively; As shown in Figure 2, grid line position bar and data line bit bar include insulation strip 7a and the bus 7b that is formed by conductive material that is positioned at above the insulation strip, particularly; The material of above-mentioned insulation strip can be black resin; This moment, insulation strip play a part to be in the light, and bus can only be used for repairing broken string with printing opacity or lighttight material.
Perhaps, as shown in Figure 3, above-mentioned array base palte also comprises the electric insulation layer 7c of conductive black matrix below, and this electric insulation layer 7c is positioned at grid line and data line top; Grid line position bar and data line bit bar are formed by the bus 7b that conductive material forms, and this moment, bus was used lighttight material, play a part to be in the light, and electric insulation layer 7c can use the material of printing opacity, only play insulation, can be covered on the whole base plate.
Need to prove that above-mentioned array base palte also comprises the black matrix of thin film transistor (TFT) 13 tops, is used to block thin film transistor (TFT), this black matrix can be structure as a whole so that make with above-mentioned conductive black matrix.
Below further specify the TFT-LCD array base palte among the utility model embodiment through the process of repairing broken string.
Particularly; As shown in Figure 4, if on the grid line 11 broken string is arranged, the method through photocoagulation at first; With the grid line 11 of 20 both sides, broken string place and the bus 7b welding in the bar of grid line position; Bus 7b is formed with weld 21 respectively in 20 both sides, broken string place, and the grid line 11 of 20 both sides, broken string place is coupled together through bus 7b, can realize the normal transmission of signal; Afterwards, adopt laser cutting method again, cut off bus 7b, make outside two weld 21, to form two otch 22, otch 22 breaks off the bus 7b of 20 tops, above-mentioned broken string place and the bus 7b of other parts.As shown in Figure 5; If the broken string place 20 of grid line 11 is positioned at the crossover location of grid line 11 and data line 12; Thereby then the bus 7b around the broken string place 20 is cut off respectively and form four otch 22, otch 22 breaks off the bus 7b of 20 tops, above-mentioned broken string place and the bus 7b of other parts, and weld 21 is between four otch 22; And weld 21 is positioned at outside grid line 11 and data line 12 crossover locations, crosstalks to avoid grid line and data line to form.Above-mentioned otch 22 makes and is separated from each other between the bus 7b at broken string place, and when avoiding the many places broken string repaired, being interconnected through bus 7b between the different circuits makes the mistake.
As shown in Figure 6; If on the data line 12 broken string is arranged; At first through the method for photocoagulation, with the data line 12 of 20 both sides, broken string place and the bus 7b welding in the data line bit bar, 20 both sides, broken string place are formed with weld 21 respectively; The data line 12 of 20 both sides, broken string place is coupled together through bus 7b, can realize the normal transmission of signal; Afterwards, adopt laser cutting method again, cut off bus 7b, make outside two weld 21, to form two otch 22, otch 22 breaks off the bus 7b of 20 tops, above-mentioned broken string place and the bus 7b of other parts.Need to prove; Similar with the grid line broken string, if the broken string place of data line is positioned at the crossover location of grid line and data line, form four otch thereby then the bus around the above-mentioned broken string place is cut off respectively; Otch breaks off the bus of top, above-mentioned broken string place and the bus of other parts; Weld is between four otch, and weld is positioned at outside grid line and the data line crossover location, crosstalks to avoid grid line and data line to form.Above-mentioned otch 22 makes and is separated from each other between the bus 7b at broken string place, and when avoiding the many places broken string repaired, being interconnected through bus 7b between the different circuits makes the mistake.
The utility model embodiment is through forming conductive black matrix on the TFT-LCD array base palte; When grid line or data line generation broken string; Directly utilize the bus in the conductive black matrix to repair broken string through the method for photocoagulation and cut; Need extra depositing operation to compare with prior art, restorative procedure is simpler, thereby has reduced the production cycle.
Below be that example is described further the TFT-LCD array base palte among the utility model embodiment with the manufacturing approach of array base palte.
Like Fig. 7 and shown in Figure 8; At first on glass substrate 10, adopt the method for magnetron sputtering or thermal evaporation to deposit the gate metal layer film of a layer thickness for
, the gate metal layer film can use metal or its alloys such as chromium, tungsten, titanium, thallium, molybdenum, aluminium, copper.On glass substrate 10, forms the figure of grid 1 and grid line 11 afterwards through composition technology for the first time.
Like Fig. 9 and shown in Figure 10; On the glass substrate 10 of accomplishing grid 1 and grid line 11 figures, pass through plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition; PECVD) method successively deposit thickness be the gate insulator layer film of
; Semiconductor layer 3 films that thickness is
and the thickness doped semiconductor layer film for
, the gate insulator layer film can adopt oxide, nitride or oxynitrides.On doping semiconductor layer, pass through the method for magnetron sputtering or thermal evaporation afterwards; Deposit a layer thickness and be the drain-source metal level film of
, drain-source metal level film can use the metal such as chromium, tungsten, titanium, thallium, molybdenum, aluminium, copper or the alloy of combination in any wherein.Through the composition technology second time, promptly grayscale mask process forms semiconductor layer 3, doping semiconductor layer 4, source electrode 5, drain electrode 6 and thin film transistor (TFT) (Thin Film Transistor, TFT) raceway groove afterwards.
The step of grayscale mask process is specially:
Behind deposition gate insulation layer film, semiconductor layer film, doped semiconductor layer film and drain-source metal level film; Apply photoresist; Adopt the exposure of gray scale mask plate; Make photoresist form the complete reserve area of photoresist, photoresist part reserve area and photoresist and remove the zone fully; The wherein complete reserve area respective data lines of photoresist, source electrode and drain electrode region, the corresponding thin film transistor channel figure of photoresist part reserve area region, photoresist is removed the zone beyond the corresponding above-mentioned figure in zone fully;
After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, the photoresist attenuation of photoresist part reserve area, and photoresist is removed the photoresist in zone fully and is removed fully;
Adopt wet-etching technique to etch away the drain-source metal level film that photoresist is removed the zone fully; Adopt dry carving technology to etch away doped semiconductor layer film and semiconductor layer film that photoresist is removed the zone fully; Photoresist is carried out ashing treatment, remove the photoresist of photoresist part reserve area fully, expose the drain-source metallic film; Adopt dry carving technology to carry out the etching second time; Etch away the drain-source metallic film and the doped semiconductor layer film of photoresist part reserve area fully, and etch away the part semiconductor layer film, form the thin-film transistor channel region territory;
Peel off the residue photoresist.
As shown in Figure 9, on glass substrate 10, formed the figure of grid line 11, data line 12 and thin film transistor (TFT) 13 through twice above-mentioned composition technology, thin film transistor (TFT) 13 comprises: grid 1, source electrode 5 and drain 6.
Like Figure 11 and shown in Figure 12; On the glass substrate 10 that forms semiconductor layer 3, doping semiconductor layer 4, source electrode 5, drain electrode 6 and thin film transistor channel figure; Adopting method deposit thickness on glass substrate 10 of magnetron sputtering or thermal evaporation is the electrically conducting transparent layer film of
; Transparent conductive film can adopt tin indium oxide (Indium Tin Oxides; ITO), indium zinc oxide (Indium Zinc Oxides, IZO) or material such as aluminum zinc oxide.Pass through the figure of the pixel electrode 8 of composition technology formation for the third time afterwards.
As depicted in figs. 1 and 2; On the glass substrate 10 that forms pixel electrode 8, apply one deck black resin material; Be used to form insulation strip 7a; Adopt the method for magnetron sputtering or thermal evaporation to deposit the metal level film of a layer thickness again for
; Be used to form bus 7b, the metal level film can use the metals such as chromium, tungsten, titanium, thallium, molybdenum, aluminium, copper or the alloy of combination in any wherein.Form the figure of deceiving matrix through the 4th composition technology afterwards; Particularly; Black matrix comprises the black matrix of conductive black matrix 7 and thin film transistor (TFT) top; As shown in Figure 1, black matrix is positioned at and shelters from grid line 11, data line 12 and thin film transistor (TFT) 13 tops, is used to shelter from grid line 11, data line 12 and thin film transistor (TFT) 13.
Concrete structure and the broken wire repair method of TFT-LCD array base palte is same as the previously described embodiments among the utility model embodiment, repeats no more at this.
The utility model embodiment is through forming conductive black matrix on the TFT-LCD array base palte; When grid line or data line generation broken string; Directly utilize the bus in the conductive black matrix to repair broken string through the method for photocoagulation and cut; Need extra depositing operation to compare with prior art, restorative procedure is simpler, thereby has reduced the production cycle.And, owing to directly on array base palte, form black matrix, forms on color membrane substrates with prior art and to deceive matrix and compare, during to box, reduced requirement at array base palte and color membrane substrates to the box precision.
The utility model embodiment also provides a kind of display panel, comprises above-mentioned TFT-LCD array base palte and color membrane substrates, and color membrane substrates includes a plurality of pixel colour filter films that are used for colour filter and the corresponding pixel of difference; The grid line position bar of above-mentioned black matrix and data line bit bar all are right against position between the adjacent pixels colour filter film., owing to be formed with black matrix on the above-mentioned array base palte, so need not to be provided with black matrix on the color membrane substrates.The concrete structure of array base palte is same as the previously described embodiments, repeats no more at this.
The utility model embodiment is through forming conductive black matrix on the TFT-LCD array base palte; When grid line or data line generation broken string; Directly utilize the bus in the conductive black matrix to repair broken string through the method for photocoagulation and cut; Need extra depositing operation to compare with prior art, restorative procedure is simpler, thereby has reduced the production cycle.
The utility model embodiment also provides a kind of display device, comprises above-mentioned display panel, and concrete structure is same as the previously described embodiments, repeats no more at this.
The utility model embodiment is through forming conductive black matrix on the TFT-LCD array base palte; When grid line or data line generation broken string; Directly utilize the bus in the conductive black matrix to repair broken string through the method for photocoagulation and cut; Need extra depositing operation to compare with prior art, restorative procedure is simpler, thereby has reduced the production cycle.
The above; Be merely the embodiment of the utility model; But the protection domain of the utility model is not limited thereto; Any technician who is familiar with the present technique field can expect changing or replacement in the technical scope that the utility model discloses easily, all should be encompassed within the protection domain of the utility model.Therefore, the protection domain of the utility model should be as the criterion with the protection domain of said claim.
Claims (8)
1. TFT-LCD array base palte; Comprise: grid line that on said substrate, forms and data line; It is characterized in that, also comprise: conductive black matrix, this black matrix is made up of with the data line bit bar that is positioned at directly over the data line the grid line position bar that is positioned at directly over the grid line.
2. TFT-LCD array base palte according to claim 1 is characterized in that, said grid line position bar and data line bit bar include insulation strip and the bus that is formed by conductive material that is positioned at above the insulation strip.
3. TFT-LCD array base palte according to claim 2 is characterized in that, the material of said insulation strip is a black resin.
4. TFT-LCD array base palte according to claim 1 is characterized in that, also comprises the electric insulation layer that is positioned at said black matrix below, and this electric insulation layer is positioned at said grid line and data line top; Said grid line position bar and data line bit bar are formed by the bus that conductive material forms.
5. according to claim 2 or 4 described TFT-LCD array base paltes; It is characterized in that the thickness of said bus is
6. according to claim 2 or 4 described TFT-LCD array base paltes, it is characterized in that said conductive material is one of in chromium, tungsten, titanium, thallium, molybdenum, aluminium, the copper or the alloy of combination in any.
7. a display panel is characterized in that, comprising:
Each described TFT-LCD array base palte and color membrane substrates among the claim 1-6;
Said color membrane substrates includes a plurality of pixel colour filter films that are used for colour filter and the corresponding pixel of difference;
The grid line position bar of said black matrix and data line bit bar all are right against position between the adjacent pixels colour filter film.
8. a display device is characterized in that, comprises the described display panel of claim 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220279617 CN202600321U (en) | 2012-06-13 | 2012-06-13 | TFT-LCD array substrate, display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220279617 CN202600321U (en) | 2012-06-13 | 2012-06-13 | TFT-LCD array substrate, display panel and display device |
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| Publication Number | Publication Date |
|---|---|
| CN202600321U true CN202600321U (en) | 2012-12-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220279617 Expired - Lifetime CN202600321U (en) | 2012-06-13 | 2012-06-13 | TFT-LCD array substrate, display panel and display device |
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| Country | Link |
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| CN (1) | CN202600321U (en) |
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2012
- 2012-06-13 CN CN 201220279617 patent/CN202600321U/en not_active Expired - Lifetime
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121212 |