CN202600292U - Magneto-optical switch - Google Patents
Magneto-optical switch Download PDFInfo
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- CN202600292U CN202600292U CN 201120489869 CN201120489869U CN202600292U CN 202600292 U CN202600292 U CN 202600292U CN 201120489869 CN201120489869 CN 201120489869 CN 201120489869 U CN201120489869 U CN 201120489869U CN 202600292 U CN202600292 U CN 202600292U
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- magneto
- transparency electrode
- transparent
- layer
- optical crystal
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The utility model provides a magneto-optical switch. The switch comprises a magneto-optical crystal, an upper transparent electrode, a lower transparent electrode and a transparent ferroelectric body. The magneto-optical crystal is the first layer. The upper transparent electrode is the second layer. The transparent ferroelectric body is the third layer. The lower transparent electrode is the fourth layer. The four layers are sequentially connected. The magneto-optical switch provided in the utility model is controlled by means of an electric field. Compared with a traditional magnetic field control way, the magneto-optical switch controlled by the electric field is enabled to have the advantages of high efficiency, low power consumption, and easy integration of control signals.
Description
(1) technical field
This utility model relates to field of optical applications, relates in particular to a kind of magneto-optic shutter that can utilize electric field controls.
(2) background technology
Magneto-optical crystal is widely used in the light intensity and light path control in the optical fiber communication.The garnet magneto-optical crystal is to use more a kind of magneto-optical crystal at present.Garnet magneto-optical crystal commonly used at present comprises the magneto-optical crystal of 45 degree and the magneto-optical crystal of 22.5 degree.For these two kinds of crystal; Polarized light is through behind the magneto-optical crystal; 45 degree or 22.5 degree are wanted clockwise or be rotated counterclockwise in the polarization direction, if realize the modulation or the switching function of light intensity, need add the magnetized state that magnetic field changes magneto-optical crystal; Thereby change the polarization direction of polarized light, influence light intensity or photoswitch.But the generation in magnetic field is than complicated many of the generation of electric field.
(3) summary of the invention
To existing technical matters; The utility model provides a kind of magneto-optic shutter, comprising: magneto-optical crystal, last transparency electrode, following transparency electrode and transparent ferroelectrics, wherein; Magneto-optical crystal is a ground floor; Last transparency electrode is the second layer, and material can be transparent conductive materials such as ITO or ZAO, and thickness is that 50nm is to 1um; Transparent ferroelectrics is the 3rd layer, and material can be transparent iron electric materials such as PZT or BTO, and thickness is that 100nm is to 1um; Following transparency electrode is the 4th layer, and material can be transparent conductive materials such as ITO or ZAO, and thickness is that 50nm is to 1um; Can adopt the method for magnetron sputtering, thermal evaporation, pulsed laser deposition on magneto-optical crystal, to plate transparency electrode, transparent ferroelectrics, following transparency electrode successively.
A kind of magneto-optic shutter that the utility model provides is controlled ferroelectric electric polarization state through ferroelectrics being applied voltage, and then controls the magnetized state of magneto-optical crystal through interfacial stress, thereby realizes the control to light intensity or light path.The utility model material electric field is controlled magneto-optic shutter, and with respect to traditional magnetic field control, efficient is high, low in energy consumption, control signal is easy to integrated.
(4) description of drawings
Fig. 1 is the structural representation of the utility model.
Among the figure: 1, magneto-optical crystal, 2, transparent ferroelectrics, 3, go up transparency electrode, 4, transparency electrode down
(5) embodiment
Embodiment describes in further detail the utility model below in conjunction with accompanying drawing.
Fig. 1 is the structural representation of the utility model, and according to the direction of illumination, being divided into is four layers, magneto-optical crystal 1, transparent ferroelectrics 2, last transparency electrode 3, following transparency electrode 4.Wherein, magneto-optical crystal 1 is a ground floor, and last transparency electrode 3 is the second layer, and as present embodiment, material is chosen as the ITO transparent conductive material, and thickness is 100nm; Transparent ferroelectrics 2 is the 3rd layer, and as present embodiment, material is chosen as PZT transparent iron electric material, and thickness is 500nm; Following transparency electrode 4 is the 4th layer, and as present embodiment, material is chosen as the transparent conductive material into ITO, 100nm; Adopt the method for magnetron sputtering on magneto-optical crystal, to plate transparency electrode 3ITO, transparent ferroelectrics 2PZT, following transparency electrode 4ITO successively.Control ferroelectric electric polarization state through ferroelectrics 2 being applied voltage, and then control the magnetized state of magneto-optical crystal 1, thereby realize control light intensity or light path through interfacial stress.The utility model material electric field is controlled magneto-optic shutter, and with respect to traditional magnetic field control, efficient is high, low in energy consumption, control signal is easy to integrated.
More than show and described ultimate principle of the utility model and the advantage of principal character and the utility model.The technician of the industry should understand; The utility model is not restricted to the described embodiments; That describes in the foregoing description and the instructions just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the present invention also has various changes and modifications, and these variations and improvement all fall in the scope of the invention that requires protection.The utility model requires protection domain to be defined by appending claims and equivalent thereof.
Claims (4)
1. a magneto-optic shutter comprises magneto-optical crystal, goes up transparency electrode, following transparency electrode and transparent ferroelectrics, and it is characterized in that: described magneto-optical crystal is a ground floor; Last transparency electrode is the second layer; Transparent ferroelectrics is the 3rd layer, and following transparency electrode is the 4th layer, and four layers are connected successively.
2. a kind of magneto-optic shutter according to claim 1 is characterized in that:
Described upward transparency electrode is ITO or ZAO transparent conductive material, and thickness is that 50nm is to 1um;
Described transparent electrode material down is ITO or ZAO transparent conductive material, and thickness is that 50nm is to 1um.
3. a kind of magneto-optic shutter according to claim 1 is characterized in that: described transparent ferroelectric material is PZT or BTO transparent iron electric material, and thickness is that 100nm is to 1um.
4. a kind of magneto-optic shutter according to claim 1 is characterized in that: adopt the method for magnetron sputtering, thermal evaporation or pulsed laser deposition on magneto-optical crystal, to plate transparency electrode, transparent ferroelectrics, following transparency electrode successively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120489869 CN202600292U (en) | 2011-11-24 | 2011-11-24 | Magneto-optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120489869 CN202600292U (en) | 2011-11-24 | 2011-11-24 | Magneto-optical switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202600292U true CN202600292U (en) | 2012-12-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120489869 Expired - Fee Related CN202600292U (en) | 2011-11-24 | 2011-11-24 | Magneto-optical switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202600292U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107678190A (en) * | 2017-10-10 | 2018-02-09 | 电子科技大学 | A kind of all solid state electric field restructural magnetic-optic devices |
-
2011
- 2011-11-24 CN CN 201120489869 patent/CN202600292U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107678190A (en) * | 2017-10-10 | 2018-02-09 | 电子科技大学 | A kind of all solid state electric field restructural magnetic-optic devices |
| CN107678190B (en) * | 2017-10-10 | 2020-01-10 | 电子科技大学 | All-solid-state magneto-optical device with reconfigurable electric field |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121212 Termination date: 20131124 |