CN202595270U - Gas spraying structure - Google Patents
Gas spraying structure Download PDFInfo
- Publication number
- CN202595270U CN202595270U CN 201220222250 CN201220222250U CN202595270U CN 202595270 U CN202595270 U CN 202595270U CN 201220222250 CN201220222250 CN 201220222250 CN 201220222250 U CN201220222250 U CN 201220222250U CN 202595270 U CN202595270 U CN 202595270U
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- gas
- gas spray
- channel
- reaction chamber
- air chamber
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Abstract
A gas spraying structure comprises a gas spraying head, a first gas cavity, a second gas cavity, a cooling thermal baffle, at least one first gas channel and at least one second gas channel. The first gas channel is communicated to a chemical vapor deposition reaction chamber downwards from the first gas cavity, is used to lead first reaction gas to the reaction chamber, and comprises a first channel portion and a third channel portion which are butted up and down; the second gas channel which is arranged separately in parallel with the first gas channel is communicated to the reaction chamber downwards from the second gas cavity, is used to lead second reaction gas to the reaction chamber, and comprises a second channel portion and a fourth channel portion which are butted up and down; wherein the connector where the first channel portion and the third channel portion are butted and the connector where the second channel portion and the forth channel portion are butted deviate from the faying face of the gas spraying head and the cooling thermal baffle. The gas spraying structure can avoid the fact that the reaction gas mixes and reacts chemically before entering the reaction chamber, and is simple in structure and convenient to process.
Description
Technical field
The utility model relates to chemical vapour deposition (Chemical Vapor Deposition is called for short CVD) device, more particularly, relates to a kind of gas spray structure that is used for chemical vapor deposition unit.
Background technology
Chemical vapour deposition is a kind of critical process of preparation semiconductor film membrane module; Comprise various microelectronic devices, film photovoltaic cell, photodiode; All be unable to do without organometallics chemical vapour deposition (Metal-organic Chemical Vapor Deposition is called for short MOCVD) technology.The basic process of growth of MOCVD is, reactant gases is introduced reaction chamber from source of the gas, utilizes the substrate initiating chamical reaction with heater heats, thereby on substrate, generates monocrystalline or polycrystal film.In the MOCVD process, the needed reactant of film growth relies on gas transport (flowing and diffusion) to arrive growth surface, and chemical reaction is also taking place in transportation, and the particle of finally growing is incorporated into the film lattice through absorption and surface reaction.
The gas spray header is used for different reactive gas (such as first reactant gases and second reactant gases) is sent into reaction chamber, and the water-cooled thermal baffle that fits in its below is used for the heat of isolated well heater generation, suppresses the thermal deformation that gas flow causes because of temperature contrast.
As shown in Figure 1, in the prior art, 20 one-tenth separate type structure designs of gas spray header 10 and cooling thermal baffle.Gas spray header 10 comprises second air chamber 102, at least one first gas flow 11 and at least one second gas flow 12, and gas spray header 10 tops are provided with first air chamber (accompanying drawing is not shown); Wherein, second air chamber 102 is used for second reactant gases is injected reaction chamber with the runner different with first reactant gases; First gas flow 11 comprises up and down two parts of butt joint, i.e. first channel portion 111 and third channel portion 112, and first channel portion 111 connects gas spray headers 10, and third channel portion 112 connects cooling thermal baffles 20 and is provided with; Second gas flow 12; Parallel with first gas flow 111 and apart from one another by opening; Comprise two parts of butt joint up and down; Be second passage portion 121 and four-way portion 122, second passage portion 121 connects gas spray header 10, the four-way portions 122 downwards from second air chamber 102 and connects 20 settings of cooling thermal baffle; Wherein, third channel portion and four-way portion are the supporting through hole on the cooling thermal baffle 20, also comprise cooling passage 203 on the cooling thermal baffle 20, are used to inject quench liquid to suppress the deformation that first, second gas flow 11,12 causes because of temperature.
Usually, at first, because there is the error on the precision in mechanical workout, gas spray header 10 lower surfaces and water-cooled thermal baffle 20 upper surfaces can not perfectly be fitted; Secondly, when well heater was worked, there was the temperature difference in cooling thermal baffle 20 upper and lower surfaces, are easy to generate buckling deformation.Because above-mentioned factor; Binding face 30 places between gas spray header 10 and the cooling thermal baffle 20 have produced slit 40; Cause different reactive gas, before not getting into reaction chamber as yet, just mix at these 40 places, slit; And then chemical reaction generation solid particulate takes place, cause the deposition on gas spray header 10 and reaction chamber sidewall; On the one hand, this can influence the effect of chemical vapour deposition, on the other hand, needs often gas spray header and reaction chamber to be cleaned, and need take the PT and bring additional overhead.
In chemical vapor deposition method, introduce a kind of gas spray structure that can avoid reactant gases that chemical reaction takes place at gas spray header and place, water-cooled thermal baffle slit before getting into reaction chamber, be a focus target researching and developing of this field at present.
The utility model content
The purpose of the utility model is to provide a kind of gas spray structure chemical vapor deposition method, that can avoid reactant gases biochemical reaction of hybrid concurrency before getting into reaction chamber that is used for.
For realizing above-mentioned purpose, the technical scheme of the utility model is following:
The utility model first aspect provides a kind of gas spray structure; Be used for importing reactant gases to cause chemical vapour deposition reaction to reaction chamber; Comprise: gas spray header 10, first air chamber and second air chamber 102, and cooling thermal baffle 20 fit in gas spray header 10 belows; Comprise cooling liquid flowing channel 203, be used for injecting quench liquid to suppress the thermal deformation that the gas spray structure produces because of the temperature difference to this cooling liquid flowing channel 203; At least one first gas flow 11 connects downwards to reaction chamber from first air chamber, is used for first reactant gases that comes from first air chamber is imported reaction chamber, and it comprises the first channel portion 111 and third channel portion 112 of butt joint up and down; At least one second gas flow 12; Connect downwards to reaction chamber from second air chamber; Parallel with first gas flow 11 and divide and be arranged; Be used for coming from second reactant gases importing reaction chamber of second air chamber, it comprises the second passage portion 121 and the four-way portion 122 of butt joint up and down; Wherein, the interface of the interface of first channel portion 111 and 112 butt joints of third channel portion and second passage portion 121 and 122 butt joints of four-way portion departs from the binding face 30 of gas spray header 10 and cooling thermal baffle 20.
Preferably, first, second channel part 111,121 is gas pipeline, and first, second channel part 111,121 is crossed the binding face 30 of gas spray header 10 and cooling thermal baffle 20 downwards, embeds corresponding the 3rd, four-way portion 112,122 respectively.
Preferably, first, second channel part 111,121 embed the 3rd, the degree of depth of four-way portion 112,122 more than or equal to the 3rd, four-way portion 112,122 degree of depth 2/3.
Preferably, the 3rd, the diameter of section of four-way portion 112,122 exceeds the diameter of section of first, second channel part 111,121 respectively, its scope that exceeds is 0.5-1mm.
The utility model second aspect provides a kind of vacuum treatment installation, is used for the organometallics chemical vapour deposition, and this vacuum treatment installation comprises the gas spray structure that the utility model first aspect provides.
Further, this vacuum treatment installation is the MOCVD board.
The disclosed gas spray structure of the utility model; The interface of the supporting through hole butt joint of the gas flow of gas spray header 10 and water-cooled thermal baffle 20 is arranged at the position of departing from both binding faces 30; Thereby can avoid reactant gases biochemical reaction of hybrid concurrency before getting into reaction chamber, and simple in structure, processing facility.
Description of drawings
Fig. 1 is the longitudinal section synoptic diagram of gas spray header in the prior art;
Fig. 2 is the longitudinal section synoptic diagram of first embodiment of the gas spray structure of the utility model;
Fig. 3 is the structural representation of first embodiment of the gas spray structure of the utility model.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of the utility model is done further to specify.
As shown in Figures 2 and 3; The disclosed a kind of gas spray structure of the utility model; Be used for MOCVD technology, comprise gas spray header 10 and cooling thermal baffle 20, the first air chamber and second air chamber 102 that fit in its below; At least one first gas flow 11 and at least one second gas flow 12; Be used for first reactant gases and second reactant gases are imported reaction chamber, and utilize substrate to cause chemical vapour deposition reaction, thereby on substrate, generate monocrystalline or polycrystalline semiconductor thin film with heater heats.
In the utility model, second air chamber 102 is arranged at gas spray header 10 inside; First gas flow 11 connects downwards to reaction chamber from first air chamber, is used for first reactant gases is imported reaction chamber, and wherein, first air chamber (not shown) is arranged at gas spray header 10 tops, and it is used to hold first gas; Second gas flow 12, parallel with first gas flow 11 and apart from one another by opening, connect downwards to reaction chamber from second air chamber 102, be used for second reactant gases is imported reaction chamber with the runner different with first reactant gases.
First air chamber that gas spray header 10 tops are provided with, not shown in the accompanying drawings; Though gas spray header 10 fits together with cooling thermal baffle 20, can dismantle and come, and cleans so that change; Cooling passage 203 on the cooling thermal baffle 20 is used to inject quench liquid to suppress the deformation that first, second gas flow 11,12 causes because of temperature.
Particularly, first gas flow 11 comprises two portions of butt joint up and down, and promptly first channel portion 111 comprises two portions of butt joint, i.e. second passage portion 121 and four-way portion 122 up and down with third channel portion 112, the second gas flows 12.
For avoiding reactant gases before getting into reaction chamber, at 40 places, slit of gas spray header 10 and cooling thermal baffle 20 binding faces 30 chemical reaction to take place, the Interface design that the utility model docks the first channel portion 111 of first gas flow 11 with third channel portion 112 the interface and the second passage portion 121 of second gas flow 12 dock with four-way portion 122 is in the position of departing from gas spray header 10 and cooling off the binding face 30 of thermal baffle 20.So; No matter there is the slit 40 that does not produce because of thermal deformation at binding face 30 places at gas spray header 10 and cooling thermal baffle 20, this technical scheme all can avoid reactant gases before getting into reaction chamber, just because of factors such as gas leak chemical reaction to take place; And the utility model is simple in structure, processing is convenient.
At first; Can adopt the first following embodiment to realize technique scheme: the first channel portion 111 of first gas flow 11, the second passage portion 121 of second gas flow 12 are respectively gas pipeline and constitute; These gas pipelines; Be the binding face 30 that first channel portion 111, second passage portion 121 extend across gas spray header 10 and cooling thermal baffle 20 downwards, embed respectively in corresponding the 3rd, the four-way portion 112,122.
At this moment, reactant gases gets into the outlet of reaction chamber, is positioned at gas spray header 10 and cools off under thermal baffle 20 binding faces 30, approaches to cool off thermal baffle 20 lower surfaces; Even so, do not have reactant gases yet and before getting into reaction chamber, promptly chemical reaction take place at these 40 places, slit because of machining error or thermal deformation produce slit 40 at gas spray header 10 with cooling thermal baffle 20 binding faces 30 places.
Secondly; Can also adopt the second following embodiment: three, four-way portion 112,122 is made up of gas pipeline; Three, four-way portion 112,122 extends upward the binding face 30 of crossing gas spray header 10 and cooling thermal baffle 20; And embed in corresponding first, second channel part 111,121, can avoid reactant gases that chemical reaction promptly takes place at 40 places, aforesaid slit before getting into reaction chamber equally.
What those skilled in the art can expect is; As long as make interface skew gas spray header 10 that docks between the gas flow different piece and the binding face 30 that cools off thermal baffle 20, can guarantee that virgin gas can be promptly in the biochemical reaction of the slit of binding face 30 40 place's hybrid concurrencies before getting into reaction chamber.Do not break away from the similar design of the utility model purport, all drop in the scope of the utility model.
In the first preferable embodiment of the utility model, first channel portion 111, second passage portion 121 embeds the 3rd, the degree of depth of four-way portion 112,122 is the 3rd, four-way portion 112,122 degree of depth 10% ~ 40%.
Three, the diameter of four-way portion 112,122 should exceed the diameter of first, second channel part 111,121 respectively so that gas pipeline can embed the 3rd easily, in the four-way portion 112,122 and realize closely cooperating between the two; For this reason, the diameter of section of the utility model the 3rd, four-way portion 112,122 is set to exceed respectively the diameter of section 0.5-1mm of first, second channel part 111,121.
Correspondingly, when adopting second embodiment of the utility model, the 3rd, four-way portion 112,122 degree of depth that upwards embeds first, second channel part 111,121 is 10% ~ 40% of first, second channel part 111,121 degree of depth.
At this moment, the diameter of section of first, second channel part 111,121 be set to exceed respectively the 3rd, the diameter of section 0.5-1mm of four-way portion 112,122.
In the embodiment of above-mentioned gas spray structure, first, second gas flow 11, the spacing between 12 are 1cm.
The vacuum treatment installation that the utility model provides is used for the organometallics chemical vapour deposition, and this vacuum treatment installation comprises the gas spray structure that the utility model first aspect provides.
Further, this vacuum treatment installation is the MOCVD board.
The above-described preferred embodiment that is merely the utility model; Said embodiment is not the scope of patent protection in order to restriction the utility model; Therefore specification sheets of every utilization the utility model and equivalent structure that the accompanying drawing content is done change, and in like manner all should be included in the protection domain of the utility model.
Claims (10)
1. a gas spray structure is used for importing reactant gases to cause chemical vapour deposition reaction to reaction chamber, comprising:
Gas spray header (10), first air chamber and second air chamber (102), wherein, said first air chamber is arranged at said gas spray header (10) top, and
Cooling thermal baffle (20) fits in said gas spray header (10) below, comprises cooling liquid flowing channel (203), is used for injecting quench liquid to suppress the thermal deformation that said gas spray structure produces because of the temperature difference to this cooling liquid flowing channel (203);
At least one first gas flow (11); Connect downwards to said reaction chamber from said first air chamber; First reactant gases that is used for coming from said first air chamber imports said reaction chamber, and it comprises the first channel portion (111) and the third channel portion (112) of butt joint up and down;
At least one second gas flow (12); Connect downwards to said reaction chamber from said second air chamber; And branch parallel with said first gas flow (11) is arranged; Second reactant gases that is used for coming from said second air chamber imports said reaction chamber, and it comprises the second passage portion (121) and the four-way portion (122) of butt joint up and down;
It is characterized in that the interface of the interface of said first channel portion (111) and third channel portion (112) butt joint and said second passage portion (121) and four-way portion (122) butt joint departs from the binding face (30) of said gas spray header (10) and cooling thermal baffle (20).
2. gas spray structure according to claim 1; It is characterized in that; Said first, second channel part (111,121) is gas pipeline; Said first, second channel part (111,121) is crossed the binding face (30) of said gas spray header (10) and cooling thermal baffle (20) downwards, embeds corresponding the 3rd, four-way portion (112,122) respectively.
3. gas spray structure according to claim 2; It is characterized in that said first, second channel part (111,121) embeds the 3rd, the degree of depth of four-way portion (112,122) is said the 3rd, four-way portion (112, the 122) degree of depth 10%～40%.
4. gas spray structure according to claim 2 is characterized in that, diameter of section said the 3rd, four-way portion (112,122) exceeds the diameter of section of said first, second channel part (111,121) respectively, and its scope that exceeds is 0.5-1mm.
5. gas spray structure according to claim 1; It is characterized in that; Said the 3rd, four-way portion (112,122) is gas pipeline; The binding face (30) of said gas spray header (10) and cooling thermal baffle (20) is upwards crossed by said the 3rd, four-way portion (112,122), embeds corresponding first, second channel part (111,121) respectively.
6. gas spray structure according to claim 5; It is characterized in that the degree of depth that said the 3rd, four-way portion (112,122) embeds first, second channel part (111,121) is 10%～40% of said first, second channel part (111,121) degree of depth.
7. gas spray structure according to claim 5 is characterized in that, that the diameter of section of said first, second channel part (111,121) exceeds respectively is said the 3rd, the diameter of section of four-way portion (112,122), and the scope that exceeds is 0.5-1mm.
8. according to each described gas spray structure among the claim 1-7, it is characterized in that the spacing between said first, second gas flow (11,12) is 1cm.
9. a vacuum treatment installation is used for the organometallics chemical vapour deposition, it is characterized in that, said vacuum treatment installation comprises the described gas spray structure of claim 1.
10. vacuum treatment installation according to claim 9 is characterized in that, said vacuum treatment installation is the MOCVD board.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220222250 CN202595270U (en) | 2012-05-16 | 2012-05-16 | Gas spraying structure |
| TW101222899U TWM462749U (en) | 2012-05-16 | 2012-11-26 | Gas spray structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220222250 CN202595270U (en) | 2012-05-16 | 2012-05-16 | Gas spraying structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202595270U true CN202595270U (en) | 2012-12-12 |
Family
ID=47312824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220222250 Expired - Lifetime CN202595270U (en) | 2012-05-16 | 2012-05-16 | Gas spraying structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN202595270U (en) |
| TW (1) | TWM462749U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107151791A (en) * | 2016-03-02 | 2017-09-12 | 威科仪器有限公司 | The reactor used for the method for operating chemical vapour deposition (CVD) system and with reference to the CVD system |
| CN107366014A (en) * | 2016-04-19 | 2017-11-21 | 纽富来科技股份有限公司 | Shower nozzle, epitaxially growing equipment and method of vapor-phase growing |
| CN115404463A (en) * | 2022-10-31 | 2022-11-29 | 上海星原驰半导体有限公司 | Atomic layer deposition equipment and atomic layer deposition spraying device |
| CN115652288A (en) * | 2022-12-28 | 2023-01-31 | 拓荆科技(上海)有限公司 | Spray plate of semiconductor process equipment and semiconductor process equipment |
-
2012
- 2012-05-16 CN CN 201220222250 patent/CN202595270U/en not_active Expired - Lifetime
- 2012-11-26 TW TW101222899U patent/TWM462749U/en not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107151791A (en) * | 2016-03-02 | 2017-09-12 | 威科仪器有限公司 | The reactor used for the method for operating chemical vapour deposition (CVD) system and with reference to the CVD system |
| CN107151791B (en) * | 2016-03-02 | 2021-08-06 | 威科仪器有限公司 | Method for operating a Chemical Vapor Deposition (CVD) system and reactor for use in conjunction with the CVD system |
| CN107366014A (en) * | 2016-04-19 | 2017-11-21 | 纽富来科技股份有限公司 | Shower nozzle, epitaxially growing equipment and method of vapor-phase growing |
| CN107366014B (en) * | 2016-04-19 | 2022-05-27 | 纽富来科技股份有限公司 | Shower head, vapor phase growth apparatus, and vapor phase growth method |
| CN115404463A (en) * | 2022-10-31 | 2022-11-29 | 上海星原驰半导体有限公司 | Atomic layer deposition equipment and atomic layer deposition spraying device |
| CN115652288A (en) * | 2022-12-28 | 2023-01-31 | 拓荆科技(上海)有限公司 | Spray plate of semiconductor process equipment and semiconductor process equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM462749U (en) | 2013-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Nanchang Medium and Micro Semiconductor Equipment Co., Ltd. Assignor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Contract record no.: 2018990000345 Denomination of utility model: Gas spraying structure Granted publication date: 20121212 License type: Exclusive License Record date: 20181217 |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121212 |
|
| CX01 | Expiry of patent term |