CN202563791U - Demonstration teaching instrument of laser-measurement silicon single crystal orientations - Google Patents
Demonstration teaching instrument of laser-measurement silicon single crystal orientations Download PDFInfo
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- CN202563791U CN202563791U CN2012200594735U CN201220059473U CN202563791U CN 202563791 U CN202563791 U CN 202563791U CN 2012200594735 U CN2012200594735 U CN 2012200594735U CN 201220059473 U CN201220059473 U CN 201220059473U CN 202563791 U CN202563791 U CN 202563791U
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Abstract
A demonstration teaching instrument of laser-measurement silicon single crystal orientations comprises a laser device, a beam splitter, silicon wafers with different crystal orientations after grinded and corrosion processed, and a screen with a hole in the center. The demonstration teaching instrument of laser-measurement silicon single crystal orientations is characterized in that the laser device emits a beam of laser which is split into two beams by the beam splitter, the two beams of laser pass through the screen with the hole in the center and respectively irradiate on two processed silicon wafers with different crystal orientations, and the silicon wafers reflect laser beams onto the screen to form feature light images with different shapes. As a result, visual images are provided for students.
Description
Technical field
The utility model relates to a kind of physics demonstration instruments used for education, relates generally to a kind of demonstration of laser determination silicon single crystal experiment, belongs to the physical experiment apparatus field.
Background technology
As everyone knows, mostly the chip that uses of hyundai electronics industry is to be made by semiconductor monocrystal.And in same monocrystalline, because the atomic density on the different crystal faces is different, the physical property that monocrystalline is shown on each different directions is also different.Maximum like the atomic density on silicon single crystal (111) face, impurity is the slowest along the diffusion of [111] direction, usually requires to be oriented to the silicon single crystal of [111] in the device production; The SiO that is oxidized to of silicon single crystal (100) crystal face and for example
2The surface state that is had is less, helps reducing cut-in voltage, so the MOS device adopts (100) crystal face to make mostly.This shows that in research and production, the crystal orientation of measuring semiconductor monocrystal is very important.
The measuring method in semiconductor monocrystal crystal orientation has the directed and directed two kinds of methods of light figure of X-ray diffraction.X-ray diffraction method is a kind of nondestructive high precision orientation method, but its complex equipments must strictly observe safety regulation for operations in the time of use; Light figure is directed, and the method precision is lower than X-ray diffraction method, but equipment requirements is simple.
Along with the development that electronics industry is maked rapid progress, relevant knowledges such as semiconductor material such as silicon, gallium arsenide appear in the textbook.At daily teaching, when serving as a teacher explanation silicon single crystal crystal orientation assay method, the student is confused often, scarcely knows what one has said.Therefore need a kind of simple and practical demonstration instrument, the visual image of measuring for the student with silicon single crystal crystal orientation intuitively.
Summary of the invention
The utility model proposes to above-mentioned problem, and the teaching demonstration instrument in a kind of laser determination silicon single crystal crystal orientation is provided, and the different crystal orientation of convenient demonstration silicon single crystal.
The teaching demonstration instrument in a kind of laser determination silicon single crystal crystal orientation is provided; Comprise: the silicon chip of laser instrument, beam splitter, the different crystal orientations after grinding and corrosion treatment and middle screen with holes; It is characterized in that: the beam of laser that laser instrument emits, be divided into two-beam by beam splitter, two-beam is through middle screen with holes; Be radiated at respectively on two silicon chips of handling with different crystal orientations; The silicon chip reflector laser forms difform characteristic light figure to screen, give the student with intuitive image.
Monocrystalline silicon sheet surface many small pits can occur, i.e. etch pit after grinding and preferential etch.Etch pit is constrained on the plane relevant with the main crystallization direction of material, and determines the shape of its erosional surface pits by these boundary plane.In general, the plane at the bottom of the etch pit is vertical with crystal face, and the several side on the edge has the family of crystal planes of specific crystallography index for some, and the bottom surface of axisymmetric rule round etch pit pressed in these sides, has constituted to have special symmetric etch pit structure.Usually, the diameter of etch pit is approximately about 10 microns, and the diameter of the laser beam of incident is more than 1 millimeter.Therefore can shine simultaneously on many etch pits with a branch of laser.Though the distribution of these etch pits on silicon chip surface is irregular, each etch pit all has strict axial symmetry, thereby parallel incident light also is reflected in identical direction.When the incident direction of silicon chip crystal orientation direction and laser paralleled, reflected light just demonstrated characteristic light figure on screen, therefore can judge surface crystallization direction and deviation angle thereof by the shape of light figure.
More than be existing principle and technology.The utility model is characterised in that, the teaching demonstration instrument in a kind of laser determination silicon single crystal crystal orientation is provided, and comprising: the silicon chip of laser instrument, beam splitter, two different crystal orientations, two screens.Beam of laser by laser instrument emits is divided into two-beam by beam splitter, is radiated at respectively on two silicon chips of handling with different crystal orientations.Laser after the silicon chip reflection of different crystal orientations shines on the screen, forms difform characteristic light figure, gives the student with intuitive image.
Description of drawings
Fig. 1 is the teaching demonstration apparatus structure synoptic diagram in laser determination silicon single crystal crystal orientation,
Fig. 2 is that the silicon chip in crystal orientation (111) reflexes to the characteristic light figure on the screen,
Fig. 3 is that the silicon chip in crystal orientation (100) reflexes to the characteristic light figure on the screen.
In above-mentioned figure, 1 expression laser instrument, 2 expression beam splitters, 3 expressions are placed on the silicon chip of the different crystal orientations on the support, 4 expression screens.
Specific embodiment
To combine accompanying drawing to come the utility model made below and further describe, so that the superiority of the utility model is better embodied.
Getting the monocrystalline silicon piece of two different crystal orientations of this experiment usefulness, is example with (111) and (100).Silicon chip grinds with the W28 silicon carbide abrasive, in process of lapping, avoids grinding the drift angle at original surface as far as possible, and surfacing has no mechanical damage.It is 65 ℃ 50% sodium hydroxide solution (weight) or 45% potassium hydroxide solution (weight) that silicon chip after will grinding then is immersed in temperature, and etching time 3～5 minutes takes out silicon chip again, and is clean with flushing with clean water, dries, and is installed on the support.
The beam of laser that milliwatt level He-Ne laser instrument 1 emits; Be divided into two-beam by beam splitter 2; Through centre screen 4 with holes, be radiated at respectively on two silicon chips of handling with different crystal orientations 3, silicon chip 3 reflector lasers are to screen 4; Form difform characteristic light figure, give the student with intuitive image.
Claims (1)
1. the teaching demonstration instrument in a laser determination silicon single crystal crystal orientation; Comprise: the silicon chip of laser instrument, beam splitter, the different crystal orientations after grinding and corrosion treatment and middle screen with holes; It is characterized in that: the beam of laser that laser instrument emits, be divided into two-beam by beam splitter, two-beam is through middle screen with holes; Be radiated at respectively on two silicon chips of handling with different crystal orientations; The silicon chip reflector laser forms difform characteristic light figure to screen, give the student with intuitive image.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200594735U CN202563791U (en) | 2012-02-20 | 2012-02-20 | Demonstration teaching instrument of laser-measurement silicon single crystal orientations |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200594735U CN202563791U (en) | 2012-02-20 | 2012-02-20 | Demonstration teaching instrument of laser-measurement silicon single crystal orientations |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202563791U true CN202563791U (en) | 2012-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200594735U Expired - Fee Related CN202563791U (en) | 2012-02-20 | 2012-02-20 | Demonstration teaching instrument of laser-measurement silicon single crystal orientations |
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| CN (1) | CN202563791U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105092583A (en) * | 2015-08-13 | 2015-11-25 | 中国振华集团永光电子有限公司（国营第八七三厂） | Silicon single crystal orientation deviation testing device with common light source |
-
2012
- 2012-02-20 CN CN2012200594735U patent/CN202563791U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105092583A (en) * | 2015-08-13 | 2015-11-25 | 中国振华集团永光电子有限公司（国营第八七三厂） | Silicon single crystal orientation deviation testing device with common light source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121128 Termination date: 20130220 |