CN202549931U - Wavelength conversion device and light emitting device - Google Patents

Wavelength conversion device and light emitting device Download PDF

Info

Publication number
CN202549931U
CN202549931U CN2012201768804U CN201220176880U CN202549931U CN 202549931 U CN202549931 U CN 202549931U CN 2012201768804 U CN2012201768804 U CN 2012201768804U CN 201220176880 U CN201220176880 U CN 201220176880U CN 202549931 U CN202549931 U CN 202549931U
Authority
CN
China
Prior art keywords
transformation
wave length
cooling unit
wavelength converter
thermoelectric cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2012201768804U
Other languages
Chinese (zh)
Inventor
李屹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Appotronics Corp Ltd
Shenzhen Appotronics Technology Co Ltd
Original Assignee
Appotronics Corp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Appotronics Corp Ltd filed Critical Appotronics Corp Ltd
Priority to CN2012201768804U priority Critical patent/CN202549931U/en
Application granted granted Critical
Publication of CN202549931U publication Critical patent/CN202549931U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Lasers (AREA)

Abstract

The utility model provides a wavelength conversion device and a light emitting device. The wavelength conversion device comprises a wavelength conversion material layer which comprises a first surface and a second surface opposite to the first surface. The wavelength conversion material layer is used for absorbing exciting light entering the first surface and transmitting excited light different from the exciting light in wavelength. The wavelength conversion device further comprises a thermoelectric refrigerating device which comprises a refrigerating face and a heating face, and the second surface of the wavelength conversion material layer is arranged on the refrigerating face of the thermoelectric refrigerating device. Using the thermoelectric refrigerating device for refrigerating can lower the surface temperature of the wavelength conversion material layer to be below the environment temperature, and the temperature of wavelength conversion materials in the wavelength conversion material layer can be effectively lowered.

Description

Wavelength converter and light-emitting device
Technical field
The utility model relates to optical technical field, particularly relates to a kind of Wavelength converter and light-emitting device.
Background technology
In LED (Light Emitting Diode, light-emitting diode) illumination and Projection Display industry, material for transformation of wave length is widely used.General usage is, material for transformation of wave length particle and silica gel or epoxy resin are evenly mixed form the fluorescence slurry, again with this slurry coating in the LED surface, solidify the back and form the material for transformation of wave length coating.Quilt material for transformation of wave length wherein absorbed after the light that LED sends incided its surperficial material for transformation of wave length coating, and the excitation wavelength transition material emission Stimulated Light different with excitation wavelength.In this structure, silica gel or epoxy resin have played bonding and fixing each material for transformation of wave length particle.
The problem of this method is; Each material for transformation of wave length particle is in the process of stimulated luminescence; Because its wavelength conversion efficiency can not be 100%; The energy that is wherein lost all is converted into heat, and accumulation and the fast rise of temperature that this has just caused the heat of material for transformation of wave length particle have directly influenced the luminous efficiency and the useful life of material for transformation of wave length.
Patent 200810065225.X discloses a kind of method that reduces the material for transformation of wave length working temperature.In this method, the material for transformation of wave length lamella is connected with a metal heat-conducting substrate, and the heat that the material for transformation of wave length lamella sends can be transmitted on this metal heat-conducting substrate and finally lose.The problem of this method is, when using the metal heat-conducting substrate heat radiation, and metal heat-conducting substrate temperature limited in ambient temperature, so the temperature on the material for transformation of wave length can not descend very lowly.
As shown in Figure 5, material for transformation of wave length lamella 501 closely is connected in plane 502a with metal heat-conducting substrate 502.Investigate the temperature of a thin layer 509 in the fluorescent material lamella 501 at present.The heat that thin layer 509 sends, earlier at material for transformation of wave length lamella 501 internal communications, its propagation distance is the distance L of material for transformation of wave length layer to plane 502a.After heat is transmitted to plane 502a, propagate in the air through metal heat-conducting substrate 502.Optimal situation is, metal heat-conducting substrate 502 is by fully heat radiation of other heat abstractor (not drawing among the figure), and its temperature just equals ambient temperature T 0So according to the heat conduction law, the temperature T of thin layer 509 1Can be expressed as:
T 1=T 0+ΔT
(1)
=T 0+r(L,α)·P
Wherein Δ T is the temperature difference of temperature of temperature and the plane 502a of thin layer 509; It can be expressed as r (L, α) with the product of P, r (L wherein; α) be thin layer 509 to the thermal resistance between the 502a of plane, it is the function of the average conductive coefficient α of distance L and phosphor sheet layer material; P is the thermal power that thin layer 509 sends.
It is thus clear that, r (L, α) big more with P, temperature difference T is just big more, and the temperature of thin layer 509 is just high more.And the material for transformation of wave length lamella generally is made up of material for transformation of wave length and organic binder bond, and wherein the conductive coefficient of organic binder bond is very low, and the conductive coefficient of for example the most frequently used transparent silica gel is less than 1W/mK.This just makes thin layer 509 often very big to the thermal resistance between the 502a of plane; Especially when thin layer be positioned at material for transformation of wave length lamella 501 away from the top layer of metal heat-conducting substrate the time because L gets maximum, the furthest of heat conduction, so thermal resistance is maximum.
Through actual measurement, the upper surface of the material for transformation of wave length lamella of a 0.2mm is approximately 5-6 ℃/W to the thermal resistance of metal heat-conducting substrate.Use for general LED, heating power is lower than 5W, and the temperature of thin layer 509 and the temperature difference of plane 502a are 25-30 ℃ at this moment.Consider that ambient temperature is 25 ℃, the temperature of thin layer 509 is 50-55 ℃, for most of material for transformation of wave length, belongs to normal range of operation.
Yet along with the increase of the demand of the development of technology and higher source luminance, the brightness of common LED at present has been difficult to satisfy the demand of some particular application, for example projection light source.The exciting power that just need to improve material for transformation of wave length this moment improves light-source brightness.And the caloric value of material for transformation of wave length must improve when improving exciting power.When the thermal power of sending of thin layer 509 is 30W, the temperature difference of the temperature of thin layer 509 and plane 502a will reach 150-180 ℃.Consider that still ambient temperature is 25 ℃, then the temperature of thin layer 509 is 175-205 ℃.Under such temperature, work, the reliability of material for transformation of wave length is difficult to guarantee.
The utility model content
The technical problem underlying that the utility model solves provides a kind of Wavelength converter and light-emitting device, solves the too high problem of working temperature of material for transformation of wave length.
A kind of Wavelength converter that the utility model proposes comprises:
The material for transformation of wave length layer, this material for transformation of wave length layer comprises opposite first and second surface;
This material for transformation of wave length layer is used to absorb the exciting light and the emission that are incident in first surface and has the Stimulated Light of different wave length with exciting light;
Thermoelectric cooling unit, this thermoelectric cooling unit comprise chill surface and heat face;
The second surface of material for transformation of wave length layer is arranged on the chill surface of thermoelectric cooling unit.
The utility model also proposes a kind of light-emitting device, comprising:
Above-mentioned Wavelength converter;
Excitation source is used to launch exciting light and it is projected the first surface of the material for transformation of wave length layer of Wavelength converter.
Compared with prior art, the utlity model has following beneficial effect:
In the Wavelength converter in the utility model, utilize the refrigeration of thermoelectric cooling unit can the surface temperature of material for transformation of wave length layer be reduced to below the ambient temperature, and then effectively reduce the temperature of the inner material for transformation of wave length of material for transformation of wave length layer.
Description of drawings
Fig. 1 is the structural representation of the utility model first embodiment;
Fig. 2 is the structural representation of the utility model second embodiment;
Fig. 3 is the structural representation of the utility model the 3rd embodiment;
Fig. 4 is the structural representation of the utility model the 4th embodiment;
Fig. 5 is the structural representation of the Wavelength converter of available technology adopting metal heat-conducting substrate.
Embodiment
Fig. 1 is the operation principle sketch map of the Wavelength converter of the utility model.Wavelength converter 100 comprises material for transformation of wave length layer 101, and this material for transformation of wave length layer 101 comprises opposite first 101a and second surface 101b.Material for transformation of wave length layer 101 is used to absorb the exciting light 103 and the emission that are incident in first surface 101a and has the Stimulated Light 104 of different wave length with exciting light.Wavelength converter 100 also comprises thermoelectric cooling unit 102, and this thermoelectric cooling unit 102 comprises chill surface 102a and heats face 102b.The second surface 102b of material for transformation of wave length layer 101 is arranged on the chill surface 102a of thermoelectric cooling unit 102.
Comprise material for transformation of wave length in the material for transformation of wave length layer.The most frequently used material for transformation of wave length is a fluorescent material, YAG fluorescent material for example, and it can absorb blue light and the yellow Stimulated Light of stimulated emission.Material for transformation of wave length possibly be the material that quantum dot, fluorescent dye etc. have wavelength conversion capability also, is not limited to fluorescent material.
Under many circumstances, material for transformation of wave length is Powdered often or granular, is difficult to directly form the material for transformation of wave length layer.Just need this moment to use a kind of bonding agent together, and form specific shape, like sheet each material for transformation of wave length granulopexy.The most frequently used method is that material for transformation of wave length is scattered in a kind of binding agent, utilizes binding agent to carry material for transformation of wave length and form specific shape as carrier.
The most frequently used binding agent is organic transparent adhesive, for example silica gel and epoxy resin.Way is that material for transformation of wave length is fully mixed with organic transparent adhesive; Material for transformation of wave length is dispersed in forms the fluorescence slurry among organic transparent adhesive; Then this fluorescence slurry evenly is coated on a substrate surface and forms the fluorescence slurry coating, make organic translucent adhesive solidify to form the material for transformation of wave length layer then at a certain temperature.
In fact, binding agent is not limited to organic translucent adhesive, also can be inorganic binder, for example waterglass, silica dioxide granule, titanium dioxide granule etc.Inorganic binder can utilize intergranular Van der Waals force and intermolecular active force to bond together adjacent material for transformation of wave length particle with after material for transformation of wave length fully mixes, and plays effect fixing and moulding.
Thermoelectric cooling unit is a thermoelectric effect of utilizing solid, and through being added in electrical potential difference between positive and negative two electrodes at chill surface with heat the refrigerating plant of the certain temperature difference of generation between the face, wherein the temperature of chill surface is lower than the temperature of the face of heating.Chill surface and heat temperature difference between the face and depend on the specified refrigeration work consumption of thermoelectric cooling unit and be added in electrical potential difference and the size of electric current between its positive and negative two electrodes.The most frequently used thermoelectric cooling unit is a semiconductor chilling plate, and its chill surface and the temperature difference that heats between the face do not wait from several degrees centigrade to up to a hundred degrees centigrade.
In the present embodiment, the second surface 101b of material for transformation of wave length layer 101 closely contacts with the chill surface 102a of thermoelectric cooling unit 102.The heat that is produced in the time of material for transformation of wave length stimulated luminescence in the material for transformation of wave length layer 101; Can at first in material for transformation of wave length layer 101, be transmitted to second surface 101b, be transmitted to chill surface 102a through second surface 101b with tight contact of chill surface 102a then.As described in the background technology, because the existence of thermal resistance, all there is the temperature difference in the optional position with second surface 101b and chill surface 102a in the material for transformation of wave length layer 101.The temperature T of optional position p in the material for transformation of wave length layer 101 pCan be expressed as:
T p=T 101b+ΔT 1
(2)
=(T 102a+ΔT 2)+ΔT 1
T wherein 101bThe surface temperature of expression second surface 101b, Δ T 1Temperature difference between expression optional position p and the second surface 101b; T 102aThe surface temperature of expression chill surface 102a, Δ T 2Temperature difference between expression second surface 101b and the chill surface 102a.Find out T easily by definition 101b=T 102a+ Δ T 2
Wherein, Δ T 1Be directly proportional with the value of the thermal power of being conducted, be directly proportional with thermal resistance between the second surface 101b with optional position p; Δ T 2Then the value with the thermal power of being conducted is directly proportional, and is directly proportional with thermal resistance between the chill surface 102a with second surface 101b.Thermal resistance between optional position p and the second surface 101b is relevant with the material of material for transformation of wave length layer, and between the thermal resistance between second surface 101b and the chill surface 102a and two surfaces to contact situation relevant.Therefore, between the material of the thermal power of being conducted, material for transformation of wave length layer and second surface 101b and chill surface 102a, contact under all constant situation of situation Δ T 1With Δ T 2All be the value of confirming, this moment T 102aValue directly influence T pSize.
Through selecting the voltage and current of suitable thermoelectric cooling unit and control thermoelectric cooling unit positive and negative end, can control the chill surface 102a of this thermoelectric cooling unit 102 and heat the temperature difference Δ t between the face 102b, i.e. Δ t=T 102b-T 102a, T wherein 102bIt is the temperature that heats face 102b.This moment any 1 p temperature T pCan further be expressed as:
T p=T 102b-Δt+ΔT 1+ΔT 2 (3)
In the present embodiment, suppose fully to contact between second surface 101b and the chill surface 102a, like this Δ T 2Value can ignore.And according to the character of thermoelectric cooling unit, its chill surface and the temperature difference Δ t that heats between the face can regulate through electrical potential difference and electric current between the positive and negative polarities of adjustment thermoelectric cooling unit in rated range.In the present embodiment, as one for example, Δ t is adjusted into 80 degrees centigrade.
In formula (3), similar with formula in the background technology (1), Δ T 1=rP, wherein r is the thermal resistance of any 1 p to second surface 101b, P is the thermal power value.Be positioned at the situation of the first surface 101a of material for transformation of wave length layer 101 for p, r=5-6 ℃/W, P=30W, this moment Δ T 1Be 150-180 ℃.
Knowledge according to general engineering heat radiation can be known, heats the temperature T of face 102b 102bCan control, for example use extra heat abstractor that it is dispelled the heat, under the situation of heat radiation optimum, then its temperature is minimum is room temperature, is made as 25 ℃.
So far, can simple computation go out, in the present embodiment the first surface 101a temperature T of material for transformation of wave length layer 101 through formula (3) 101aTemperature approximately be 95-125 ℃.Can find out with the scheme contrast in the background technology; The utility model adopts the mode of refrigeration to replace the mode of original simple heat radiation; Make the surface temperature of material for transformation of wave length layer can be reduced to below the ambient temperature; Even, make material for transformation of wave length layer temperature inside be minimized well below ambient temperature.
In the present embodiment, the second surface 101b of material for transformation of wave length layer 101 closely contacts with the chill surface 102a of thermoelectric cooling unit 102, makes Δ T 2Size can ignore.In practical operation; A kind of method that realizes the most easily is; Material for transformation of wave length is mixed the fluorescence slurry that forms with binding agent; Directly be coated on chill surface 102a surface, the material for transformation of wave length layer that forms after the adhesive cures directly adheres on the chill surface 102a, and both are mutually permanently connected when forming closely contact.
In practical operation; Also possibly have the heat-conducting medium layer between the second surface 101b of material for transformation of wave length layer 101 and the chill surface 102a of thermoelectric cooling unit 102, heat is transmitted on the chill surface 102a through the second surface 101b of this heat-conducting medium layer from material for transformation of wave length layer 101.For example; Can use heat conduction glue material for transformation of wave length layer 101 to be pasted on the chill surface 102a of thermoelectric cooling unit 102; Heat conduction this moment glue is filled between the chill surface 102a of material for transformation of wave length layer 101 and thermoelectric cooling unit 102, has realized the function of heat-conducting medium layer.Because the thickness of heat-conducting glue water layer is very little, is generally less than 50 microns, this makes that its thermal resistance is very little, and then the Δ T that is produced by heat conduction glue 2Also very little.
The heat-conducting medium layer can also be a kind of highly heat-conductive material sheet, for example metal material sheet or thermal conductive ceramic material piece.Two surfaces of this highly heat-conductive material sheet closely contact with the conduction heat with the second surface 101b of material for transformation of wave length layer 101 and the chill surface 102a of thermoelectric cooling unit 102 respectively.
What be worth explanation is; Because thermoelectric cooling unit 102 is own opaque; Therefore exciting light 103 can only be from the first surface 101a incident away from thermoelectric cooling unit 102 of material for transformation of wave length 101, and same, Stimulated Light 104 also can only be from the first surface 101a outgoing of material for transformation of wave length 101.Consider that material for transformation of wave length layer stimulated luminescence is isotropic; The Stimulated Light of its generation can be divided into two parts; First's Stimulated Light can directly be transmitted into space outerpace from first surface 101a, and the second portion Stimulated Light then can be to the direction emission of thermoelectric cooling unit 102.Therefore in a preferred embodiment, be attached with the reflector on the chill surface 102a of thermoelectric cooling unit 102.The second portion Stimulated Light incides and is reflected behind this reflector and is transmitted into space outerpace from first surface 101a, forms Stimulated Light 104. jointly with first's Stimulated Light
Can there be multiple way on chill surface 102a, to form the reflector.Can directly use the method for sputter on chill surface 102a, to form metallic reflective coating or dielectric reflection film; Also can speculum directly be adhered to chill surface 102a surface; Also can the sheet metal that be coated with reflective film be adhered to chill surface 102a surface, this sheet metal can play the effect of reflector and heat-conducting medium layer simultaneously.
In order further to strengthen radiating effect; Material for transformation of wave length layer 101 also comprises the Heat Conduction Material that is scattered in the binding agent; This Heat Conduction Material is used to conduct the heat that material for transformation of wave length sends, and then can effectively reduce the temperature difference Δ T between material for transformation of wave length layer inside and the second surface 101b 1Can find out that from formula (3) this is helpful to reducing material for transformation of wave length layer temperature inside.Preferably, this Heat Conduction Material is transparent or white inorganic material particle, for example the mixing of one or more in diamond grains, sapphire particle, aluminum nitride particle, alumina particle, silica dioxide granule, glass particle and the zirconium dioxide particle.
In the above-mentioned explanation of the utility model, suppose that the face that the heats 102b of thermoelectric cooling unit 102 can fully be dispelled the heat, and identical with ambient temperature.In practical operation, in order to reach this point, need carry out radiating treatment to heating face 102b, modal radiating treatment method is to use heat abstractor.
Second embodiment of the utility model is as shown in Figure 2.The difference of this embodiment and first embodiment is that this embodiment also comprises heat abstractor 205.Heat abstractor 205 comprises a radiating surface 205a, and the face that the heats 202b of thermoelectric cooling unit 202 is set on this radiating surface 205a, and closely contacts with radiating surface 205a.This heat abstractor 205 is used to conduct the heat on the face that the heats 202b of thermoelectric cooling unit 202.In the present embodiment, heat abstractor 205 is radiators, and it is formed by high heat conductive metal materials processing.Because the conductive coefficient of radiator material is very high, can diffuse to other surface of radiator in the inner conduction fast of radiator by the heat of radiating surface 205a conduction, and contacting calorie spread to the external world through these surfaces and air.In a preferred embodiment, can use fan to increase air flow,, improve radiating effect to strengthen the heat exchange of spreader surface and air.This belongs to known technology, repeats no more here.
In practical application, except radiator, also there is the heat abstractor of various ways.Heat pipe heat radiation technology for example, the volatilization that utilizes the liquid in the heat pipe exactly is transmitted to heat pipe second end to realize the heat radiation of opposite heat tube first end fast with the heat of heat pipe first end.If use the heat pipe heat radiation technology to realize the heat abstractor of the utility model, then the plane that connected of heat pipe first end is a radiating surface.Heat abstractor can also be another thermoelectric cooling unit, and its chill surface is exactly the radiating surface of this heat abstractor.
Further, be not limited to use heat abstractor to heating the method that face 202b carries out radiating treatment, for example can also use water-cooled or air-cooled, liquid or the gas of promptly controlling low temperature flows through it and heats face 202b and this surface is lowered the temperature.This belongs to known technology equally, repeats no more here.
In the 3rd embodiment of the utility model, different with first embodiment is, also comprises drive unit, is used to drive thermoelectric cooling unit, makes material for transformation of wave length layer and exciting light generation relative motion, as shown in Figure 3.Wherein, material for transformation of wave length layer 301 is mutually permanently connected with thermoelectric cooling unit 302.Drive unit (not drawing among the figure) is a linear movement motor, the horizontal direction reciprocating motion in can driving thermoelectric cooling unit 302 and scheming on the material for transformation of wave length layer that is fixedly connected with it 301 edge, and it is static that the position of exciting light 303 keeps.The advantage of present embodiment is; The irradiation position that each local material for transformation of wave length particle only moves to exciting light 303 just can be excited and the evolution of heat; Then can cool off rapidly in other position owing to the effect of thermoelectric cooling unit 302; So with respect to first embodiment, the temperature of the material for transformation of wave length layer in the present embodiment is lower.
As the 4th embodiment of the utility model, the utility model also provides a kind of light-emitting device, and is as shown in Figure 4.Different with first embodiment is that the light-emitting device 400 in the present embodiment also comprises excitation source 407, is used to launch exciting light 403 and it is projected the first surface 101a of the material for transformation of wave length layer of Wavelength converter 100.The material for transformation of wave length layer absorbs exciting light 403 and stimulated emission Stimulated Light 404a.
Because exciting light 403 and Stimulated Light 404a are positioned at the homonymy of material for transformation of wave length layer, so the transmit direction of Stimulated Light 404a is towards excitation source 407.If Stimulated Light 404a is incident in the surface of excitation source 407, excitation source 407 will certainly cause Stimulated Light 404a and absorb and scattering loss, and there is adverse effect in this luminosity for light-emitting device.Therefore in the present embodiment; As preferable methods; Also comprise the guiding device 408 on the light path that is arranged between excitation source 407 and the Wavelength converter 100, the Stimulated Light 404a that this 408 while of guiding device guide wavelength conversion equipment sends separates with the light path of exciting light 403.
Specifically, in the present embodiment, guiding device 408 is beam split filters, and its characteristic is and can reflects Stimulated Light 404a simultaneously by transmission exciting light 403.Mode with transmission after exciting light 403 sends from excitation source 407 is directed the first surface 101a of incident in the material for transformation of wave length layer; Stimulated Light 404a then is reflected after inciding guiding device 408 and forms emergent light 404b and be separated with the light path of exciting light 403, and then has avoided Stimulated Light to be incident in the loss that excitation source causes.
In practical application; Guiding device 408 can also use other form to realize; For example use the beam split filter of reflection exciting light transmission simultaneously Stimulated Light; This moment, exciting light was directed incident in the material for transformation of wave length layer with reflection way, and Stimulated Light then can the transmission guiding device and separate with the light path of exciting light.
The above is merely the embodiment of the utility model; Be not thus the restriction the utility model claim; Every equivalent structure or equivalent flow process conversion that utilizes the utility model specification and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the utility model.

Claims (12)

1. a Wavelength converter is characterized in that, comprising:
The material for transformation of wave length layer, this material for transformation of wave length layer comprises opposite first and second surface;
This material for transformation of wave length layer is used to absorb the exciting light and the emission that are incident in first surface and has the Stimulated Light of different wave length with exciting light;
Thermoelectric cooling unit, this thermoelectric cooling unit comprise chill surface and heat face;
The second surface of material for transformation of wave length layer is arranged on the chill surface of thermoelectric cooling unit.
2. a kind of Wavelength converter according to claim 1 is characterized in that: the second surface of material for transformation of wave length layer closely contacts with the chill surface of thermoelectric cooling unit.
3. a kind of Wavelength converter according to claim 1 is characterized in that: also comprise the heat-conducting medium layer between the chill surface of the second surface of material for transformation of wave length layer and thermoelectric cooling unit.
4. a kind of Wavelength converter according to claim 1 is characterized in that: material for transformation of wave length layer and thermoelectric cooling unit are mutually permanently connected.
5. a kind of Wavelength converter according to claim 1 is characterized in that: thermoelectric cooling unit is a semiconductor chilling plate.
6. a kind of Wavelength converter according to claim 1 is characterized in that: the material for transformation of wave length layer comprises binding agent and the material for transformation of wave length that mixes mutually with binding agent.
7. a kind of Wavelength converter according to claim 6 is characterized in that: the material for transformation of wave length layer also comprises the Heat Conduction Material that is scattered in the binding agent, and this Heat Conduction Material is used to conduct the heat that material for transformation of wave length sends.
8. a kind of Wavelength converter according to claim 1 is characterized in that: be attached with the reflector on the chill surface of thermoelectric cooling unit.
9. a kind of Wavelength converter according to claim 1 is characterized in that:
Also comprise being used to conduct the heat abstractor that thermoelectric cooling unit heats the heat on the face, this heat abstractor comprises a radiating surface, and the face of heating of thermoelectric cooling unit is arranged on this radiating surface.
10. a kind of Wavelength converter according to claim 4 is characterized in that:
Also comprise drive unit, be used to drive thermoelectric cooling unit, make material for transformation of wave length layer and exciting light generation relative motion.
11. a light-emitting device is characterized in that, comprising:
Like described any one Wavelength converter of claim 1 to 10;
Excitation source is used to launch exciting light and it is projected the first surface of the material for transformation of wave length layer of Wavelength converter.
12. a kind of light-emitting device according to claim 11 is characterized in that:
Also comprise the guiding device on the light path that is arranged between excitation source and the Wavelength converter; Be used for the first surface that guiding exciting light projects the material for transformation of wave length layer of Wavelength converter, the Stimulated Light that the material for transformation of wave length layer of while guide wavelength conversion equipment sends is separated with the light path of exciting light.
CN2012201768804U 2011-11-25 2012-04-24 Wavelength conversion device and light emitting device Expired - Lifetime CN202549931U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012201768804U CN202549931U (en) 2011-11-25 2012-04-24 Wavelength conversion device and light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201120479290.4 2011-11-25
CN201120479290 2011-11-25
CN2012201768804U CN202549931U (en) 2011-11-25 2012-04-24 Wavelength conversion device and light emitting device

Publications (1)

Publication Number Publication Date
CN202549931U true CN202549931U (en) 2012-11-21

Family

ID=47170511

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012201768804U Expired - Lifetime CN202549931U (en) 2011-11-25 2012-04-24 Wavelength conversion device and light emitting device

Country Status (1)

Country Link
CN (1) CN202549931U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103794704A (en) * 2013-09-18 2014-05-14 吴震 Wavelength conversion apparatus and light emitting device
CN103885274A (en) * 2012-12-20 2014-06-25 深圳市光峰光电技术有限公司 Light emitting device and related projection system
CN106796387A (en) * 2014-10-10 2017-05-31 索尼公司 Fluorophor wheel, light supply apparatus and projection type image display apparatus
CN111076103A (en) * 2019-11-28 2020-04-28 中国科学院宁波材料技术与工程研究所 Fluorescent module and laser lighting system
CN114442409A (en) * 2020-10-30 2022-05-06 中强光电股份有限公司 Wavelength conversion module and projection device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103885274A (en) * 2012-12-20 2014-06-25 深圳市光峰光电技术有限公司 Light emitting device and related projection system
CN103794704A (en) * 2013-09-18 2014-05-14 吴震 Wavelength conversion apparatus and light emitting device
CN106796387A (en) * 2014-10-10 2017-05-31 索尼公司 Fluorophor wheel, light supply apparatus and projection type image display apparatus
CN111076103A (en) * 2019-11-28 2020-04-28 中国科学院宁波材料技术与工程研究所 Fluorescent module and laser lighting system
CN114442409A (en) * 2020-10-30 2022-05-06 中强光电股份有限公司 Wavelength conversion module and projection device

Similar Documents

Publication Publication Date Title
CN203549686U (en) Wavelength conversion device and relevant light source system and projection system
CN102437272B (en) Wavelength conversion device and luminous device
CN202549931U (en) Wavelength conversion device and light emitting device
US20190258147A1 (en) Wavelength conversion device, light-emitting device and projection system
CN103885274B (en) Light-emitting device and relevant projecting system
CN104614926A (en) Wavelength conversion device with a cooling structure baseplate and light emitting device
JP6388595B2 (en) Color conversion device, lighting unit, solid state light emitter package, and lighting fixture
US8740416B2 (en) Cooling device and LED lighting apparatus using the same
CN102853377A (en) Wavelength converter and light-emitting device
Xu et al. CaAlSiN3: Eu/glass composite film in reflective configuration: A thermally robust and efficient red-emitting color converter with high saturation threshold for high-power high color rendering laser lighting
Ma et al. Packaging for laser-based white lighting: Status and perspectives
CN204176561U (en) Fluorescence colour wheel and comprise the light source of this fluorescence colour wheel
JP5675248B2 (en) Light source device and lighting device
JP2016009761A (en) Light emitting module
JP2011204406A (en) Combination lighting of light-emitting diode and phosphor
CN104879713A (en) Wavelength converter and light-emitting device
JP2005340065A (en) Light-emitting diode backlight device
CN109578823A (en) A kind of laser white light source of laser diode and fluorescent powder membrane cooling simultaneously
CN105974719A (en) Wavelength conversion device and laser display system
Lee et al. Highly efficient and highly conductive phosphor-in-glass materials for use in LD-driven white-light lamp
CN207539658U (en) Solid state light source and system
CN216526711U (en) Color wheel assembly and projection device
CN206020915U (en) A kind of wavelength-conversion sheet of employing transmission substrate and light-emitting device
CN206022421U (en) A kind of wavelength-conversion sheet of employing low internal stress substrate and light-emitting device
TWI688728B (en) Lighting device and lighting apparatus

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong.

Patentee after: APPOTRONICS Corp.,Ltd.

Address before: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor.

Patentee before: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd.

Address after: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor.

Patentee after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd.

Address before: 518057 Fangda Building, South 12 Road, Nanshan Science Park, Shenzhen City, Guangdong Province

Patentee before: APPOTRONICS Corp.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20121121