CN202534700U - Vapor plating mask plate - Google Patents
Vapor plating mask plate Download PDFInfo
- Publication number
- CN202534700U CN202534700U CN2012200162801U CN201220016280U CN202534700U CN 202534700 U CN202534700 U CN 202534700U CN 2012200162801 U CN2012200162801 U CN 2012200162801U CN 201220016280 U CN201220016280 U CN 201220016280U CN 202534700 U CN202534700 U CN 202534700U
- Authority
- CN
- China
- Prior art keywords
- mask plate
- vapor deposition
- layer
- opening size
- deposition mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The utility model relates to a vapor plating mask plate characterized in that the mask plate has a structure of at least two layers and the opening size of each layer increases layer by layer. The vapor plating mask plate provided by the utility model is advantaged by an electroforming manufacture method, improved positional accuracy of an OLED vapor plating mask plate, improved opening size accuracy of the OLED vapor plating mask plate, the upper and lower opening angles that can be controlled at will to satisfy vapor plating requirements, high production efficiency, low cost, and broad market prospect.
Description
Technical field
The utility model relates to a kind of mask plate, relates in particular to a kind of vapor deposition mask plate.
Background technology
OLED (OLED) is because the advantage of its wide visual angle, high-contrast and high corresponding speed has been given and has shown great attention to.El light emitting device is divided into inorganic EL device and Organnic electroluminescent device.The brightness of organic light emitting apparatus and response speed are higher than inorganic EL device, and can color display.
This display of organic electroluminescence comprises Organnic electroluminescent device, and Organnic electroluminescent device has and is stacked on suprabasil anode, organic material layer and negative electrode respectively.Organic material layer comprises organic emission layer, and organic emission layer is because the exciton that compound hole and electronics obtain and luminous.In addition, for hole and electronics are transferred to emission layer reposefully and improve emission effciency, electron injecting layer and electron transfer layer can be arranged between negative electrode and the organic emission layer, and hole injection layer and hole transmission layer can be arranged between anode and the organic emission layer.
Above-mentioned Organnic electroluminescent device comprises first electrode, organic luminous layer and second electrode.When making organic light emitting apparatus, through photoetching process, through corrosive agent composition on ITO.When photoetching process was used for preparing second electrode again, moisture infiltrated between the organic luminous layer and second electrode, can shorten the life-span of organic light emitting apparatus significantly, reduced its performance.In order to overcome above problem, adopt evaporation process that luminous organic material is deposited on the substrate, form organic luminous layer, this method needs supporting high accuracy vapor deposition to use mask plate.The making of second electrode is with the manufacture method of luminescent layer.
In evaporate process, along with the prolongation of time, temperature is also in continuous rising; High temperature can reach 60 ℃, thus since during very thin applications of mask plate if without processing, mask plate is its solder mask frame generation position deviation relatively; And sagging, influence the organic material evaporating quality.
The OLED field that makes generally adopts the individual layer vapor deposition to use mask plate at present; As shown in Figure 1; The organic material particle passes mask plate and is attached on the substrate from all angles, and opening 11 zero drafts are when particle tilts to inject angle when being less than or equal to θ; This part particle can be run into perforated wall and crested can't arrive substrate.This phenomenon can produce following problem: make the particle that tilts to inject excalation occur, cause briliancy to descend, and on substrate, can not form the thickness and the shape of hope.
The utility model content
The technical problem that the utility model will solve provides a kind of vapor deposition mask plate, and it comprises sandwich construction, and along with the number of plies increases progressively, opening size increases progressively, and forms the opening tapering, to satisfy the vapor deposition requirement, improves the quality of precision and OLED.
In order to solve the problems of the technologies described above, the technical scheme that the utility model is taked is following:
A kind of vapor deposition mask plate is characterized in that, comprises double-layer structure at least, and each layer opening size successively increases.
Said vapor deposition mask plate comprises double-layer structure.
Ground floor thickness is 10-20 μ m, and opening size is 60-80 μ m; Second layer thickness is 15-25 μ m, and opening size is 100-120 μ m.
Said vapor deposition mask plate comprises three-decker.
Ground floor thickness is 10-20 μ m, and opening size is 60-80 μ m; Second layer thickness is 15-25 μ m, and opening size is 100-120 μ m; The threeply degree is 15-25 μ m, and opening size is 160-180 μ m.
Said vapor deposition mask plate comprises four-layer structure.
Ground floor thickness is 10-20 μ m, and opening size is 60-80 μ m; Second layer thickness is 15-25 μ m, and opening size is 100-120 μ m; The threeply degree is 15-25 μ m, and opening size is 160-180 μ m; The 4th layer thickness is 15-25 μ m, and opening size is 240-260 μ m.
Form tapering between said each layer opening.
Said tapering is between 30-50 °.
Said vapor deposition mask plate invar alloy, pure nickel or dilval.
Preferably, tapering σ opening tapering is controlled between 30-50 °.
A kind of vapor deposition mask plate that the utility model provides, its production method is the mode of electroforming, has improved the positional precision of OLED vapor deposition with mask plate; Improved the precision of OLED vapor deposition with the mask plate opening size; Can control the angle of upper and lower opening arbitrarily, to satisfy the vapor deposition requirement, production efficiency is high, cost hangs down and has vast market prospect.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is done further detailed explanation.
Fig. 1 is near the enlarged drawing individual layer zero draft vapor deposition mask plate opening;
Fig. 2 is a near enlarged drawing three layers of vapor deposition mask plate opening;
Fig. 3 is the front view of vapor deposition mask plate.
1 is the core film among the figure, and 2 is the vapor deposition mask plate, and 3 is ground floor vapor deposition mask plate, and 4 is second layer vapor deposition mask plate, and 5 is the 3rd layer of vapor deposition mask plate, and 6 is the open area, and 7 is the location hole point.
Embodiment
1: three layer of vapor deposition mask plate of embodiment
As shown in Figure 2, a kind of OLED vapor deposition is used mask plate, can overcome the shortcoming of conventional monolayers mask plate, and obtains the higher OLED of quality (thickness, shape, briliancy etc.); Accomplish the making of three ply board through CCD (ccd image sensor) accurate in locating of LDI exposure machine; Electroforming ground floor vapor deposition mask plate 3 on core 1, its actual (real) thickness is invar alloy or the pure nickel of 10-20 μ m, this ground floor is 60-80 μ m for the opening layer of OLED vapor deposition with mask plate, opening size;
When carrying out ground floor, make the CCD anchor point, made ground floor and directly be coated with light-sensitive surface making second layer vapor deposition mask plate 4 afterwards, second layer Thickness Design is 15-25 μ m, and opening size is 100-120 μ m;
The 3rd layer of vapor deposition mask plate 5 made through the CCD location and confirmed aperture position, and it makes thickness is 15-25 μ m, and opening size is made as 160-180 μ m;
At last be made into high-accuracy OLED vapor deposition with the three range upon range of forms that add and used mask plate, opening tapering σ is 30 °.
2: two layers of vapor deposition mask plate of embodiment
A kind of OLED vapor deposition is used mask plate, can overcome the shortcoming of conventional monolayers mask plate, and obtains the higher OLED of quality (thickness, shape, briliancy etc.); Accomplish the making of two laminates through CCD (ccd image sensor) accurate in locating of LDI exposure machine; Electroforming ground floor vapor deposition mask plate on core, its actual (real) thickness is invar alloy or the pure nickel of 10-20 μ m, this ground floor is 60-80 μ m for the opening layer of OLED vapor deposition with mask plate, opening size.
When carrying out ground floor, make the CCD anchor point, made ground floor and directly be coated with light-sensitive surface making second layer vapor deposition mask plate afterwards, second layer Thickness Design is 15-25 μ m, and opening size is 100-120 μ m.
At last be made into high-accuracy OLED vapor deposition with the two range upon range of forms that add and used mask plate, opening tapering σ is 40 °.
3: four layers of vapor deposition mask plate of embodiment
A kind of OLED vapor deposition is used mask plate, can overcome the shortcoming of conventional monolayers mask plate, and obtains the higher OLED of quality (thickness, shape, briliancy etc.); Accomplish the making of four laminates through CCD (ccd image sensor) accurate in locating of LDI exposure machine; Electroforming ground floor vapor deposition mask plate on core, its actual (real) thickness is invar alloy or the pure nickel of 10-20 μ m, this ground floor is 60-80 μ m for the opening layer of OLED vapor deposition with mask plate, opening size.
When carrying out ground floor, make the CCD anchor point, made ground floor and directly be coated with light-sensitive surface making second layer vapor deposition mask plate afterwards, second layer Thickness Design is 15-25 μ m, and opening size is 100-120 μ m.
The 3rd layer of vapor deposition mask plate made through the CCD location and confirmed aperture position, and it makes thickness is 15-25 μ m, and opening size is made as 160-180 μ m.
The 4th layer of vapor deposition mask plate made through the CCD location and confirmed aperture position, and it makes thickness is 15-25 μ m, and opening size is made as 240-260 μ m.
At last be made into high-accuracy OLED vapor deposition with the four range upon range of forms that add and used mask plate, opening tapering σ is 50 °
Certainly the utility model can be other sandwich constructions, and the opening that makes each layer is along with the number of plies increases progressively, and opening size increases progressively.
Above embodiment purpose is to explain the utility model, and the protection range of unrestricted the utility model, all application that come by the utility model simple change all drop in the protection range of the utility model.
Claims (9)
1. a vapor deposition mask plate is characterized in that, comprises double-layer structure at least, and each layer opening size successively increases.
2. vapor deposition mask plate according to claim 1 is characterized in that, said vapor deposition mask plate comprises double-layer structure.
3. vapor deposition mask plate according to claim 2 is characterized in that, ground floor thickness is 10-20 μ m, and opening size is 60-80 μ m; Second layer thickness is 15-25 μ m, and opening size is 100-120 μ m.
4. vapor deposition mask plate according to claim 1 is characterized in that, said vapor deposition mask plate comprises three-decker.
5. vapor deposition mask plate according to claim 4 is characterized in that, ground floor thickness is 10-20 μ m, and opening size is 60-80 μ m; Second layer thickness is 15-25 μ m, and opening size is 100-120 μ m; The threeply degree is 15-25 μ m, and opening size is 160-180 μ m.
6. vapor deposition mask plate according to claim 1 is characterized in that, said vapor deposition mask plate comprises four-layer structure.
7. vapor deposition mask plate according to claim 6 is characterized in that, ground floor thickness is 10-20 μ m, and opening size is 60-80 μ m; Second layer thickness is 15-25 μ m, and opening size is 100-120 μ m; The threeply degree is 15-25 μ m, and opening size is 160-180 μ m; The 4th layer thickness is 15-25 μ m, and opening size is 240-260 μ m.
8. according to each described vapor deposition mask plate of claim 1-7, it is characterized in that, form tapering between said each layer opening.
9. vapor deposition mask plate according to claim 8 is characterized in that said tapering is between 30-50 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200162801U CN202534700U (en) | 2012-01-16 | 2012-01-16 | Vapor plating mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200162801U CN202534700U (en) | 2012-01-16 | 2012-01-16 | Vapor plating mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202534700U true CN202534700U (en) | 2012-11-14 |
Family
ID=47135860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200162801U Expired - Fee Related CN202534700U (en) | 2012-01-16 | 2012-01-16 | Vapor plating mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202534700U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205696A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Mask plate for vapor plating |
| US9142806B2 (en) | 2013-06-21 | 2015-09-22 | Xiamen Tianma Micro-Electronics Co., Ltd. | Mask and method for forming the same |
-
2012
- 2012-01-16 CN CN2012200162801U patent/CN202534700U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205696A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Mask plate for vapor plating |
| US9142806B2 (en) | 2013-06-21 | 2015-09-22 | Xiamen Tianma Micro-Electronics Co., Ltd. | Mask and method for forming the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103205695B (en) | A kind of evaporation mask plate and manufacture craft thereof | |
| EP3690969B1 (en) | Manufacturing method of an all-solution oled device | |
| US9954170B2 (en) | Recess structure for print deposition process and manufacturing method thereof | |
| CN104201289B (en) | Pixel unit and production method for same, display panel, and display device | |
| CN104393192A (en) | Pixel demarcation layer, manufacturing method, display panel and display device thereof | |
| CN100560782C (en) | A kind of novel mask system of organic electroluminescence device and making method | |
| CN105154822A (en) | Small-opening evaporation mask plate | |
| CN106856203B (en) | Top-emitting display light-emitting device and preparation method thereof | |
| CN105449123B (en) | The preparation method of water oxygen barrier layer | |
| CN202585543U (en) | An electroforming mask plate | |
| CN104319351A (en) | OLED array substrate, preparation method of OLED array substrate, display panel and display device | |
| WO2020118842A1 (en) | Array substrate and manufacturing method therefor, and display device | |
| CN108010953B (en) | Organic light-emitting display back plate, preparation method thereof and display device | |
| CN109735167B (en) | Hole injection layer ink, organic electroluminescent device and manufacturing method thereof | |
| CN103928625A (en) | Device structure of flexible transparent OLED and manufacturing method | |
| CN105845844A (en) | Flexible substrate manufacturing method, OLED (organic light-emitting diode) device manufacturing method and the applications thereof | |
| CN110148612A (en) | Organic LED display panel and preparation method thereof | |
| CN203834005U (en) | Mask plate and mask assembly | |
| CN202534700U (en) | Vapor plating mask plate | |
| CN110164941A (en) | Pixel defining layer and production method, display panel and production method, display device | |
| CN103205704A (en) | Vapor deposition mask | |
| CN105789239A (en) | Double-sided light emitting device for OLED display screen and preparation method | |
| CN103205696A (en) | Mask plate for vapor plating | |
| CN105789259B (en) | Organic electroluminescent display panel and preparation method thereof, display device | |
| CN105720083A (en) | High-accuracy composite mask plate assembly for evaporation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20190808 Granted publication date: 20121114 |
|
| PP01 | Preservation of patent right | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20220116 Granted publication date: 20121114 |
|
| PD01 | Discharge of preservation of patent | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121114 Termination date: 20200116 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |