CN202514149U - Ballast of low-frequency electrodeless lamp - Google Patents
Ballast of low-frequency electrodeless lamp Download PDFInfo
- Publication number
- CN202514149U CN202514149U CN2012201351942U CN201220135194U CN202514149U CN 202514149 U CN202514149 U CN 202514149U CN 2012201351942 U CN2012201351942 U CN 2012201351942U CN 201220135194 U CN201220135194 U CN 201220135194U CN 202514149 U CN202514149 U CN 202514149U
- Authority
- CN
- China
- Prior art keywords
- voltage
- circuit
- transistor
- oxide
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Circuit Arrangements For Discharge Lamps (AREA)
Abstract
The utility model relates to an electronic ballast, in particular to a ballast of a low-frequency electrodeless lamp, solving the problem that when the low-frequency electrodeless lamp is started up for the first time, the driving voltage of an MOS (metal oxide semiconductor) tube driving circuit in the ballast is not high enough to provide 13.5V supply voltage. The ballast of the low-frequency electrodeless lamp comprises an EMC(electromagnetic compatibility) filter circuit, a bridge rectifier circuit, a direct current booster circuit, an MOS tube driving circuit with an FM2822 chip (U2), an MOS tube power output circuit, a third crystal triode (BG3), a 15V third stabilivolt (DW3), a fifth capacitor (C5), an eighth crystal diode (D8) and a 105th resistor (R105) and further comprises a second composite crystal triode (BG2) and a 13.5V control circuit. The ballast of the low-frequency electrodeless lamp is simple in structure, reasonable in design and low in cost; and the startup performance of the electrodeless lamp is greatly improved.
Description
Technical field
The utility model relates to electric ballast, is specially a kind of low frequency electrodeless lamp ballast.
Background technology
Low frequency electrodeless lamp is a kind of long-life, high light efficiency, high color rendering index (CRI), no color break-up, energy-conserving and environment-protective, can does the new type light source of high-power output.
Existing low frequency electrodeless lamp mainly is made up of ballast, coupler, fluorescent tube three parts.
As shown in Figure 1, ballast comprises EMC filter circuit, bridge rectifier, DC voltage booster circuit, metal-oxide-semiconductor drive circuit, metal-oxide-semiconductor power output circuit, the 3rd transistor BG3,15V the 3rd voltage-stabiliser tube DW3 and the 5th capacitor C 5.The EMC filter circuit is connected to form by the first cross-line capacitor C 1, the first common-mode inductor L1, the second cross-line capacitor C 2, the second common-mode inductor L2 and the 3rd cross-line capacitor C 3 successively.Bridge rectifier is connected to form by four rectifier diode D1, D2, D3, D4.DC voltage booster circuit is the 400V that comprises L6561D chip U1, the 3rd high frequency transformer T3, the first metal-oxide-semiconductor Q1, the 6th crystal diode D6, the 9th crystal diode D9 typical application circuit that boosts; Wherein, Elementary winding one end of the 3rd high frequency transformer T3 is connected with the anode tap of the 6th crystal diode D6, and the cathode terminal of the 6th crystal diode D6 is DC voltage booster circuit output terminals A (starting back output dc voltage 400V); The secondary winding one end ground connection of the 3rd high frequency transformer T3, its other end are connected with the anode tap of the 9th crystal diode D9; The cathode terminal of the 9th crystal diode D9 is high frequency transformer secondary winding output B (starting 25 volts of back output dc voltages), and the cathode terminal of the 9th crystal diode D9 is through the 4th capacitor C 4 ground connection.The metal-oxide-semiconductor drive circuit comprises FM2822 chip U2.The metal-oxide-semiconductor power output circuit comprises the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th high frequency transformer T4; Wherein, The common port of the drain D of the source S of the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 is the output of metal-oxide-semiconductor power output circuit, i.e. the output of ballast.
The ballast syndeton of existing low frequency electrodeless lamp is following: first and second output of EMC filter circuit is connected with first and second input of bridge rectifier respectively; First output head grounding of bridge rectifier, its second output are connected with the input of DC voltage booster circuit; High frequency transformer secondary winding output B is connected with the collector electrode of the 3rd transistor BG3; The base stage of the 3rd transistor BG3 is through 15V the 3rd voltage-stabiliser tube DW3 ground connection; And parallel connection first 05 resistance R 105 between the base stage of the 3rd transistor BG3 and the collector electrode, 15V the 3rd voltage-stabiliser tube DW3 two ends parallel connection the 5th capacitor C 5; The 12 pin of FM2822 chip U2 in the emitter of the 3rd transistor BG3 and the metal-oxide-semiconductor drive circuit is connected, and the 8th pin of the L6561D chip U1 of the emitter of the 3rd transistor BG3 in the 8th crystal diode D8 and DC voltage booster circuit is connected; The drain D of the second metal-oxide-semiconductor Q2 in the output terminals A of DC voltage booster circuit and the metal-oxide-semiconductor power output circuit is connected; The 9th, 11 pins of FM2822 chip U2 are connected with the metal-oxide-semiconductor power output circuit respectively in the metal-oxide-semiconductor drive circuit, and the output of metal-oxide-semiconductor power output circuit is the output of existing ballast.
The operation principle of existing low frequency electrodeless lamp is: the 220V alternating current is behind EMC filter circuit, bridge rectifier, DC voltage booster circuit; By DC voltage booster circuit output terminals A output 400V voltage the metal-oxide-semiconductor power output circuit is supplied power; Simultaneously, the high frequency transformer secondary winding output B output 25V voltage in the DC voltage booster circuit triggers the 3rd transistor BG3 conducting; To metal-oxide-semiconductor drive circuit input 13.5V voltage; And then metal-oxide-semiconductor driving circuit drives metal-oxide-semiconductor power output circuit output radio-frequency current makes coupler produce an alternating magnetic field to coupler, and this alternating magnetic field is sensed in the fluorescent tube of electrodeless lamp V; Make the interior gas generation ionization of fluorescent tube of electrodeless lamp V, thereby excitated fluorescent powder sends visible light.
There is following shortcoming in existing low frequency electrodeless lamp ballast: in the ballast, the metal-oxide-semiconductor drive circuit is by the power supply of 13.5V driven, and 13.5V voltage is obtained by one group of winding of DC voltage booster circuit medium-high frequency transformer; Through the 3rd transistor BG3 output 13.5V voltage; Yet stable 13.5V voltage need wait until after the electrodeless lamp starter that promptly the 400V direct current could obtain after being pressed with load, so; When electrodeless lamp starts first; Through repeatedly test, the 3rd transistor BG3 output voltage all is lower than 10V, is a process that increases to 13.5V voltage gradually.Equally, when starting first, the 400V direct voltage is also not enough, and this is that being full of electricity needs the regular hour because 13.5V voltage and 400V direct voltage all are connected to filter capacitor.So when electrodeless lamp started first, many output voltages of the 3rd transistor BG3 did not all reach design load 13.5V, just be easy to cause the driving voltage of metal-oxide-semiconductor not enough; Make its thoroughly conducting, simultaneously, the direct voltage of DC voltage booster circuit output terminals A output is less than 400V; Cause ballast less than normal, bring certain difficulty for again electrodeless lamp starter, so poor circulation the electric current of coupler output; The metal-oxide-semiconductor drive circuit very easily punctures because conducting is not enough, causes ballast to burn.
Therefore, be necessary that existing ballast is done some to be improved, and improves the startability of low frequency electrodeless lamp.
Summary of the invention
The utility model is in order to solve when low frequency electrodeless lamp starts first, and the metal-oxide-semiconductor driving circuit drives undertension in the ballast can not obtain the problem of stable 13.5V supply power voltage, and a kind of novel low frequency electrodeless lamp ballast is provided.
The utility model is to adopt following technical scheme to realize: a kind of low frequency electrodeless lamp ballast comprises the EMC filter circuit, bridge rectifier; DC voltage booster circuit comprises the metal-oxide-semiconductor drive circuit of FM2822 chip U2, metal-oxide-semiconductor power output circuit; The 3rd transistor BG3; 15V the 3rd voltage-stabiliser tube DW3, the 5th capacitor C 5, the eight crystal diode D8 and first 05 resistance R 105.
Said DC voltage booster circuit comprises L6561D chip U1, the 3rd high frequency transformer T3, the first metal-oxide-semiconductor Q1, the 6th crystal diode D6, the 9th crystal diode D9; Wherein, elementary winding one end of the 3rd high frequency transformer T3 is connected with the anode tap of the 6th crystal diode D6, and the cathode terminal of the 6th crystal diode D6 is the output terminals A of DC voltage booster circuit; The secondary winding one end ground connection of the 3rd high frequency transformer T3, its other end are connected with the anode tap of the 9th crystal diode D9, and the cathode terminal of the 9th crystal diode D9 is high frequency transformer secondary winding output B.
Said EMC filter circuit connects bridge rectifier; Bridge rectifier connects DC voltage booster circuit; The DC voltage booster circuit output terminals A is connected with the input of metal-oxide-semiconductor power output circuit; DC voltage booster circuit medium-high frequency transformer secondary output winding output B is connected with the collector electrode of the 3rd transistor BG3; The emitter of the 3rd transistor BG3 is connected with metal-oxide-semiconductor drive circuit input and is connected with the 8th pin of L6561D chip U1 in the DC voltage booster circuit through the 8th crystal diode D8; The base stage of the 3rd transistor BG3 is passed through 15V the 3rd voltage-stabiliser tube DW3 ground connection, 15V the 3rd voltage-stabiliser tube DW3 two ends parallel connection the 5th capacitor C 5, and the metal-oxide-semiconductor drive circuit connects the metal-oxide-semiconductor power output circuit.
Also comprise the second composite crystal triode BG2 and 13.5V control circuit.
The said second composite crystal triode BG2 is used for directly replacing the 3rd transistor BG3.
Said 13.5V control circuit comprises first voltage sampling circuit, the first transistor BG1 and the photoelectrical coupler IC1 that is made up of first 01 resistance R 101 and 102 series connection of first 02 resistance R.
One end of first voltage sampling circuit is connected with the DC voltage booster circuit output terminals A, its other end ground connection, and when DC voltage booster circuit output terminals A output voltage was 400V, the voltage of the intermediate node of first 01 resistance R 101 and first 02 resistance R 102 was 20V.
The base stage of the first transistor BG1 is connected with the intermediate node of first 01 resistance R 101 and first 02 resistance R 102 with the 18V second voltage-stabiliser tube DW2 through first 03 resistance R 103; The negative electrode of light-emitting diode D101 among the collector electrode of the first transistor BG1 and the photoelectrical coupler IC1 is connected; Parallelly connected first 02 capacitor C 102 between the grounded emitter of the first transistor BG1, the base stage of the first transistor BG1 and emitter.
The anode tap of light-emitting diode D101 is connected with high frequency transformer secondary winding output B with the 18V first voltage-stabiliser tube DW1 through first 04 resistance R 104 among the photoelectrical coupler IC1, and is parallel with first 01 capacitor C 101 between the anode tap of light-emitting diode D101 and the ground.
The collector electrode of phototriode BG4 is connected with the collector electrode of the second composite crystal triode BG2 among the photoelectrical coupler IC1, and its emitter is connected with the base stage of the second composite crystal triode BG2 through first 05 resistance R 105.
During work, when electrodeless lamp starts first, under the effect of 13.5V control circuit; The second composite crystal triode BG2 can directly export stable 13.5V voltage; Do not have the process that increases to 13.5V voltage gradually, the metal-oxide-semiconductor drive circuit just directly driven MOS tube power output circuit light electrodeless lamp to the coupler power output; Improved the startability of electrodeless lamp like this, greatly.
The utility model is simple in structure, reasonable in design, with low cost, efficiently solves existing electroless lamp ballasting device when starting first, and starting impulse voltage does not reach predetermined value first, and electrodeless lamp starts the problem of difficulty.
Description of drawings
Fig. 1 is the circuit structure schematic diagram of existing low frequency electrodeless lamp ballast.
Fig. 2 is the circuit structure schematic diagram of the described low frequency electrodeless lamp ballast of the utility model.
Among the figure, L1-first common-mode inductor, L2-second common-mode inductor; BG1, BG3-first and third transistor, the BG2-second composite crystal triode, BG4-phototriode; Q1, Q2, first, second and third metal-oxide-semiconductor of Q3-, T3, third and fourth high frequency transformer of T4-, IC1-photoelectrical coupler; The U1-L6561D chip, U2-FM2822 chip, the electrodeless lamp of V-.
Embodiment
Below in conjunction with Fig. 1 and Fig. 2 the utility model is elaborated.
A kind of low frequency electrodeless lamp ballast comprises the EMC filter circuit, bridge rectifier; DC voltage booster circuit comprises the metal-oxide-semiconductor drive circuit of FM2822 chip U2, metal-oxide-semiconductor power output circuit; The 3rd transistor BG3; 15V the 3rd voltage-stabiliser tube DW3, the 5th capacitor C 5, the eight crystal diode D8 and first 05 resistance R 105.
Said DC voltage booster circuit comprises L6561D chip U1, the 3rd high frequency transformer T3, the first metal-oxide-semiconductor Q1, the 6th crystal diode D6, the 9th crystal diode D9; Wherein, elementary winding one end of the 3rd high frequency transformer T3 is connected with the anode tap of the 6th crystal diode D6, and the cathode terminal of the 6th crystal diode D6 is the output terminals A of DC voltage booster circuit; The secondary winding one end ground connection of the 3rd high frequency transformer T3, its other end are connected with the anode tap of the 9th crystal diode D9, and the cathode terminal of the 9th crystal diode D9 is high frequency transformer secondary winding output B.
Said EMC filter circuit connects bridge rectifier; Bridge rectifier connects DC voltage booster circuit; The DC voltage booster circuit output terminals A is connected with the input of metal-oxide-semiconductor power output circuit; DC voltage booster circuit medium-high frequency transformer secondary output winding output B is connected with the collector electrode of the 3rd transistor BG3; The emitter of the 3rd transistor BG3 is connected with metal-oxide-semiconductor drive circuit input and is connected with the 8th pin of L6561D chip U1 in the DC voltage booster circuit through the 8th crystal diode D8; The base stage of the 3rd transistor BG3 is passed through 15V the 3rd voltage-stabiliser tube DW3 ground connection, 15V the 3rd voltage-stabiliser tube DW3 two ends parallel connection the 5th capacitor C 5, and the metal-oxide-semiconductor drive circuit connects the metal-oxide-semiconductor power output circuit.
Also comprise the second composite crystal triode BG2 and 13.5V control circuit.
The said second composite crystal triode BG2 is used for directly replacing the 3rd transistor BG3.
Said 13.5V control circuit comprises first voltage sampling circuit, the first transistor BG1 and the photoelectrical coupler IC1 that is made up of first 01 resistance R 101 and 102 series connection of first 02 resistance R.
One end of first voltage sampling circuit is connected with the DC voltage booster circuit output terminals A, its other end ground connection; And when DC voltage booster circuit output terminals A output voltage is 400V; The voltage of the intermediate node of first 01 resistance R 101 and first 02 resistance R 102 is 20V (purpose that is set at 20V is: when DC voltage booster circuit output terminals A output 400V voltage, be enough to make the first transistor BG1 conducting).
The base stage of the first transistor BG1 is connected with the intermediate node of first 01 resistance R 101 and first 02 resistance R 102 with the 18V second voltage-stabiliser tube DW2 through first 03 resistance R 103; The negative electrode of light-emitting diode D101 among the collector electrode of the first transistor BG1 and the photoelectrical coupler IC1 is connected; Parallelly connected first 02 capacitor C 102 between the grounded emitter of the first transistor BG1, the base stage of the first transistor BG1 and emitter.
The anode tap of light-emitting diode D101 is connected with high frequency transformer secondary winding output B with the 18V first voltage-stabiliser tube DW1 through first 04 resistance R 104 among the photoelectrical coupler IC1, and is parallel with first 01 capacitor C 101 between the anode tap of light-emitting diode D101 and the ground.
The collector electrode of phototriode BG4 is connected with the collector electrode of the second composite crystal triode BG2 among the photoelectrical coupler IC1, and its emitter is connected with the base stage of the second composite crystal triode BG2 through first 05 resistance R 105.
During concrete work, as shown in Figure 2, when the anode tap 1 of light-emitting diode D101 applies a suitable voltage among the photoelectrical coupler IC1, the conducting of light-emitting diode D101 ability; In like manner, when the base terminal 2 of the first transistor BG1 applied a suitable voltage, the first transistor BG1 could conducting.When low frequency electrodeless lamp starts first; The 220V alternating current is behind EMC filter circuit, bridge rectifier, DC voltage booster circuit; When the output voltage of DC voltage booster circuit output terminals A makes the voltage of the base terminal 2 of the transistor BG1 that wins reach desired value, the first transistor BG1 conducting; Simultaneously, when the output voltage of DC voltage booster circuit medium-high frequency transformer secondary output winding output B makes that the voltage of anode tap 1 of light-emitting diode D101 reaches desired value, light-emitting diode D101 conducting; At this moment; Phototriode BG4 conducting among the photoelectrical coupler IC1, high frequency transformer secondary winding output B provides bias voltage through phototriode BG4, first 05 resistance R 105 and 15V the 3rd voltage-stabiliser tube DW3 to the second composite crystal triode BG2, yet; 15V the 3rd voltage-stabiliser tube DW3 is to the second composite crystal triode BG2 bias voltage voltage stabilizing; Promptly stable 15V bias voltage is provided to the second composite crystal triode BG2, like this, the second composite crystal triode BG2 conducting; Directly to the stable 13.5V voltage of metal-oxide-semiconductor drive circuit output; And then metal-oxide-semiconductor driving circuit drives metal-oxide-semiconductor power output circuit power output is to coupler, makes coupler produce an alternating magnetic field, and this alternating magnetic field is sensed in the fluorescent tube of electrodeless lamp V; Make the interior gas generation ionization of fluorescent tube of electrodeless lamp V, thereby excitated fluorescent powder sends visible light.
Based on said process; Second composite crystal triode BG2 output 13.5V voltage is common control of voltage by the base terminal 2 of the anode tap 1 of light-emitting diode D101 and the first transistor BG1; Promptly have only after the voltage of the base terminal 2 of the anode tap 1 of light-emitting diode D101 and the first transistor BG1 all reaches desired value simultaneously; The second composite crystal triode BG2 could conducting also stablize output 13.5V voltage, does not so just have the process that is elevated to 13.5V voltage gradually, has solved in existing ballast; When starting first, 400V direct voltage deficiency and the 3rd transistor BG3 output voltage always are lower than the problem of 13.5V.Therefore, when low frequency electrodeless lamp started first, the metal-oxide-semiconductor of the startup first grid impulse voltage in the ballast promptly reached design load 13.5V; Make the thorough conducting of ballast metal-oxide-semiconductor, power output is lighted electrodeless lamp to coupler; Avoided ballast to be burnt out; Make the startability of electrodeless lamp be greatly improved, ice box especially in the winter time, effect is more obvious.
Claims (1)
1. a low frequency electrodeless lamp ballast comprises the EMC filter circuit, bridge rectifier; DC voltage booster circuit comprises the metal-oxide-semiconductor drive circuit of FM2822 chip (U2), metal-oxide-semiconductor power output circuit; The 3rd transistor (BG3); 15V the 3rd voltage-stabiliser tube (DW3), the 5th electric capacity (C5), the 8th crystal diode (D8) and first 05 resistance (R105);
Said DC voltage booster circuit comprises L6561D chip (U1), the 3rd high frequency transformer (T3), first metal-oxide-semiconductor (Q1), the 6th crystal diode (D6), the 9th crystal diode (D9); Wherein, elementary winding one end of the 3rd high frequency transformer (T3) is connected with the anode tap of the 6th crystal diode (D6), and the cathode terminal of the 6th crystal diode (D6) is the output terminals A of DC voltage booster circuit; Secondary winding one end ground connection, its other end of the 3rd high frequency transformer (T3) are connected with the anode tap of the 9th crystal diode (D9), and the cathode terminal of the 9th crystal diode (D9) is high frequency transformer secondary winding output B;
Said EMC filter circuit connects bridge rectifier; Bridge rectifier connects DC voltage booster circuit; The DC voltage booster circuit output terminals A is connected with the input of metal-oxide-semiconductor power output circuit; DC voltage booster circuit medium-high frequency transformer secondary output winding output B is connected with the collector electrode of the 3rd transistor (BG3); The emitter of the 3rd transistor (BG3) is connected with metal-oxide-semiconductor drive circuit input and is connected with the 8th pin of L6561D chip (U1) in the DC voltage booster circuit through the 8th crystal diode (D8); The base stage of the 3rd transistor (BG3) is passed through 15V the 3rd voltage-stabiliser tube (DW3) ground connection, 15V the 3rd voltage-stabiliser tube (DW3) two ends parallel connection the 5th electric capacity (C5), and the metal-oxide-semiconductor drive circuit connects the metal-oxide-semiconductor power output circuit;
It is characterized in that: also comprise second composite crystal triode (BG2) and the 13.5V control circuit;
The said second composite crystal triode (BG2) is used for directly replacing the 3rd transistor (BG3);
Said 13.5V control circuit comprises first voltage sampling circuit, first transistor (BG1) and the photoelectrical coupler (IC1) that is made up of first 01 resistance (R101) and the series connection of first 02 resistance (R102);
One end of first voltage sampling circuit is connected with the DC voltage booster circuit output terminals A, its other end ground connection; And when DC voltage booster circuit output terminals A output voltage was 400V, the voltage of the intermediate node of first 01 resistance (R101) and first 02 resistance (R102) was 20V;
The base stage of first transistor (BG1) is connected with the intermediate node of 18V second voltage-stabiliser tube (DW2) with first 01 resistance (R101) and first 02 resistance (R102) through first 03 resistance (R103); The negative electrode of the light-emitting diode (D101) in the collector electrode of first transistor (BG1) and the photoelectrical coupler (IC1) is connected; Parallelly connected first 02 electric capacity (C102) between the grounded emitter of first transistor (BG1), the base stage of first transistor (BG1) and emitter;
The anode tap of light-emitting diode (D101) is connected with high frequency transformer secondary winding output B with 18V first voltage-stabiliser tube (DW1) through first 04 resistance (R104) in the photoelectrical coupler (IC1), and is parallel with first 01 electric capacity (C101) between the anode tap of light-emitting diode (D101) and the ground;
The collector electrode of phototriode (BG4) is connected with the collector electrode of the second composite crystal triode (BG2) in the photoelectrical coupler (IC1), and its emitter is connected with the base stage of the second composite crystal triode (BG2) through first 05 resistance (R105).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201351942U CN202514149U (en) | 2012-04-01 | 2012-04-01 | Ballast of low-frequency electrodeless lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201351942U CN202514149U (en) | 2012-04-01 | 2012-04-01 | Ballast of low-frequency electrodeless lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202514149U true CN202514149U (en) | 2012-10-31 |
Family
ID=47066598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012201351942U Expired - Lifetime CN202514149U (en) | 2012-04-01 | 2012-04-01 | Ballast of low-frequency electrodeless lamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202514149U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612239A (en) * | 2012-04-01 | 2012-07-25 | 洪路 | Ballast for low-frequency electrodeless lamp |
-
2012
- 2012-04-01 CN CN2012201351942U patent/CN202514149U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612239A (en) * | 2012-04-01 | 2012-07-25 | 洪路 | Ballast for low-frequency electrodeless lamp |
| CN102612239B (en) * | 2012-04-01 | 2014-01-15 | 洪路 | Ballast for low-frequency electrodeless lamp |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101827488B (en) | Fluorescent lamp electronic ballast and lighting device | |
| CN202514149U (en) | Ballast of low-frequency electrodeless lamp | |
| CN102612239B (en) | Ballast for low-frequency electrodeless lamp | |
| CN102088814B (en) | Low-frequency electrodeless lamp drive circuit with open-circuit protection function | |
| CN102958263B (en) | Electric ballast | |
| CN102458027B (en) | Control method for lighting circuit and applicable lighting circuit | |
| CN203896573U (en) | Electrodeless high-voltage pulse triggering low-voltage holding circuit | |
| CN102065622B (en) | Isolation electrodeless lamp | |
| CN204707333U (en) | A kind of electronic high frequency ballast | |
| CN201557312U (en) | Novel fluorescent lamp electronic ballast circuit with high efficiency and long service life | |
| CN106851151A (en) | A kind of display and its TV power supplys | |
| CN204316789U (en) | A kind of self-locking optical excitation raster data model system based on power amplification | |
| CN201869426U (en) | Isolated electrodeless lamp | |
| CN201541385U (en) | Dimming electrodeless lamp | |
| CN215529385U (en) | Novel lamp tube driving controller | |
| CN202979436U (en) | Novel low pressure sodium lamp ballast circuit | |
| CN202444684U (en) | Metal halide lamp electronic ballast | |
| CN202799357U (en) | Fluorescent lamp filament preheating control circuit | |
| CN206686291U (en) | A kind of display and its TV power supply | |
| CN201976311U (en) | Control device for cathode type fluorescent lamp to heat filaments before start-up | |
| CN202310249U (en) | High power factor energy saving lamp | |
| CN202095164U (en) | Preheating circuit applied to electronic ballast of fluorescent lamp | |
| CN204650967U (en) | Display backlight driving circuit on a kind of hardboard | |
| CN201690667U (en) | Novel high-frequency ballast of energy-saving lamp | |
| CN201207749Y (en) | EEFL electric power having protection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121031 Effective date of abandoning: 20140115 |
|
| RGAV | Abandon patent right to avoid regrant |