CN202487594U - Avalanche photodiode - Google Patents
Avalanche photodiode Download PDFInfo
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- CN202487594U CN202487594U CN2012201122360U CN201220112236U CN202487594U CN 202487594 U CN202487594 U CN 202487594U CN 2012201122360 U CN2012201122360 U CN 2012201122360U CN 201220112236 U CN201220112236 U CN 201220112236U CN 202487594 U CN202487594 U CN 202487594U
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Abstract
The utility model relates to a semiconductor photo diode detector. Provided is a light-operated breakdown voltage submicron pillar ultraviolet avalanche photodiode. The avalanche photodiode with a super-high ultraviolet visible ratio is provided with a highly doped N+ type substrate, wherein an N- layer is arranged on an upper surface of the highly doped N+ type substrate. Two sides of an upper surface of the N- layer are provided with P+ type strength of electric field adjustment layers, an upper surface of the middle of the N- layer is provided with an N type avalanche multiplication layer, an upper surface of the N type avalanche multiplication layer is provided with a P+ type ohmic contact layer, two sides of the N type avalanche multiplication layer and the P+ type ohmic contact layer are respectively provided with an oxidation layer, a lower surface of the highly doped N+ type substrate is provided with a positive electrode, and an upper surface of the P+ type ohmic contact layer is provided with a metal negative electrode.
Description
Technical field
The utility model relates to the semiconductor photo diode sensitive detection parts, especially relates to a kind of 4H-carborundum sub-micron post ultraviolet avalanche photodide.
Background technology
The optical detection of ultraviolet band particularly at the ultraviolet detection of non-solar-blind band, has become the research object in optical detection field day by day.The ultraviolet light photo diode is mainly used in space research, environment measuring, medical use and military auxiliary etc.Now; The high-responsivity photomultiplier that adds filter is the ultraviolet light photo diode of extensive use; Yet because it is too in the restriction of factors such as heavy, fragile and costliness, the feasible semiconductor ultraviolet light photo diode that the scientific research of ultraviolet detector has been turned to day by day small size, low cost and high stability.
The semi-conducting material of semiconductor ultraviolet light photo diode mainly contains silicon (Si), aluminum gallium nitride (AlGaN), zinc oxide (ZnO) and carborundum (SiC) etc.The making of Si material and device thereof is the most ripe, yet because the restriction of its material intrinsic property, like low energy gap and high dark current density, has caused light filter element integrated of not high and the needs costliness of the responsiveness of device; The AlGaN ternary semiconductor material of direct band gap has wide direct forbidden band and the adjustable characteristic of energy gap.Through regulating the doping content of Al among the AlGaN, can realize blind detection of ultraviolet band day truly.Yet,, cause the high defect concentration of material and device (particularly device surface) because its material growth and device technology are ripe not enough.Because the light absorption of direct gap semiconductor occurs near near the device surface mostly, and the device surface defective will strengthen the compound of charge carrier greatly, therefore caused the detection performance of (Al) GaN ultraviolet light photo diode to be had a greatly reduced quality, extremely low like responsiveness.ZnO is novel semiconductor material with wide forbidden band, have the growth cost low with advantage such as internal gain, yet since its material growth that is that all right is ripe, be not suitable for being applied to the avalanche photodide of high working voltage.And as the SiC material of third generation wide bandgap semiconductor; Because the series of advantages such as material preparation process, high hole electronics ionization level ratio and high saturated carrier's rate that it has broad stopband, high breakdown field strength, high heat conductance, high radiation preventing performance, maturation make it to become the preferred semiconductor material of making the ultraviolet light avalanche diode.
At present, semiconductor ultraviolet light photo diode generally has 4 kinds: the photodiode and the avalanche photo diode (APD) of the photodiode of metal-semiconductor-metal, the photodiode of PIN structure, photoconductive structure.APD because of its have highly sensitive, gain bandwidth is big and response speed enjoys people to pay close attention to soon, it is mainly used in the detection of small-signal and single photon signal.Detection of weak is all having important effect aspect biotechnology, medical science and the optical communication.For example: biological warning system of LIF property and non-linear light covert-channel.The light intensity of the Ultraluminescence that produces in the induced with laser decay is equivalent to millions of photons of per second, and requires the big 1Mbs of probe response speed of photodiode in the nonlinear optical line covert-channel in the pW magnitude.The single-photon detecting survey technology is surveyed fields such as dirt, bioluminescence, radiation detection, high-energy physics, astronomical photometry, optical time domain reflection, quantum key distribution system and is widely used at high-resolution spectral measurement, non-destructive species analysis, high speed artifact detection, rigorous analysis, atmosphere.Because the single photon diode detector is in the critical role of high-tech sector, it has become one of problem of each photoelectron educational circles of developed country primary study.
Yet for traditional APD, after each layer of device doping content and structure were confirmed, its puncture voltage (Vbr) and UV, visible light were to be definite value than all, and UV, visible light is than day blind detection demand that can not satisfy practical significance.The APD of traditional in addition snowslide absorption and separation (SAM) structure can only rely on complicated external circuit to realize that it extinguishes function.Therefore, have the new structure APD that extinguishes function and high UV, visible light specific characteristic automatically and become a goal in research for photoelectricity educational circles.
Summary of the invention
Deficiency, UV, visible light in the blind detection of day that the purpose of the utility model is to exist to present APD extinguish the problems such as complexity that function realizes than not high and device, and a kind of light-operated puncture voltage sub-micron post ultraviolet avalanche photodide (SMAPD) with superelevation UV, visible light ratio is provided.
The utility model is provided with highly doped N
+The type substrate is at highly doped N
+The type substrate top surface is provided with N
-Layer is at N
-Layer upper surface both sides are provided with highly doped P
+Type electric field strength regulating course is at N
-The mid portion upper surface of layer is provided with N type avalanche multiplication layer, is provided with P at the upper surface of N type avalanche multiplication layer
+The ohmic contact layer of type is at N type avalanche multiplication layer and P
+The both sides of the ohmic contact layer of type are respectively equipped with oxide layer, at highly doped N
+The lower surface of type substrate (being the back side of device) is provided with positive electrode, at P
+The upper surface of the ohmic contact layer of type is provided with the metal negative electrode.
Be located at N
-The highly doped P of layer upper surface both sides
+The best 0.6 μ m of width between the type electric field strength regulating course, said highly doped P
+The thickness of type electric field strength regulating course is preferably 0.1 μ m.
The structure of the utility model mainly is made up of the two large divisions: the multiplication regions of block large-area absorption region and sub-micron rod structure.The design of absorption region is following: at highly doped N
+Design thickness is the low-doped N of 9.0 μ m on the type substrate surface
-Layer is then at N
-Laminar surface (intermediate width be the scope of 0.6 μ m except) design thickness is the highly doped P of 0.1 μ m
+Layer.P
+Layer not only can improve the absorption of incident photon for absorbed layer provides the PN junction depletion region, also plays the effect of regulating sub-micron post multiplication regions electric field strength, therefore is called P
+Type electric field strength regulating course.The multiplication regions design of sub-micron rod structure is at N
-On the surface of the middle 0.2 μ m of layer, by the thick highly doped P of 0.15 μ m
+The N type avalanche multiplication layer of the ohmic contact layer of type and 0.6 μ m is formed.At device surface, except electrode part exceptionally, designing the thick silicon dioxide layer of 0.75 μ m is passivation layer.Subsequently, positive and negative electrode designs at N respectively
+Substrate bottom and sub-micron post P
+Region surface.Its groundwork principle of 4H-SiC SMAPD is that incident light is absorbed in the absorption region, produces to be excited charge carrier.Being excited charge carrier mode with transverse movement under uptake zone depletion region effect of electric field gets in the nano-pillar structure of high electric field; Under the acceleration of high electric field in the nano-pillar in charge carrier and the lattice valence bond interact and produce ionization by collision; Thereby generation avalanche breakdown is to reach the Detection of weak effect.In addition, P
+The design of type electric field strength regulating course makes that the Electric Field Distribution in the nano-pillar can the significant change along with the condition of illumination, has realized the light-operated snowslide function of device.
The utility model simulates the photoelectricity characteristic of the SMAPD of said structure through semiconductor device computer-aided design (CAD) simulation softward.Analog result representes that the avalanche breakdown voltage of SMAPD (Vbr) can change along with the variation of illumination condition, and Vbr is minimum when spectral response is the strongest, and it is big more promptly to work as incident optical power density, and it is more little that incident light absorbs stronger Vbr, and Vbr is more little.Through the Electric Field Distribution sunykatuib analysis of SMAPD under particular bias voltage, can learn that above-mentioned phenomenon is that this hole potential well is by P because the hole potential well of device sub-micron column bottom causes
+Type electric field strength regulating course forms, and its height can have influence on the size of puncture voltage.And this hole potential well can change along with the change of illumination condition, causes the puncture voltage of SMAPD to change along with the change of illumination condition.The reason that the hole potential well degree of depth changes along with illumination condition is because the P that illumination is opened a way in the uptake zone
+N
-Produce the photoproduction electric field, P in photoproduction direction of an electric field and the uptake zone in the knot depletion layer
+N
-The knot internal electric field is in the opposite direction, sub-micron post below P
+N
-The total electric field of knot diminishes.Light absorption is strong more, and intensity of illumination is big more, and corresponding photoproduction electric field is also strong more, has caused sub-micron post below P
+N
-The total electric field of knot and hole potential well change also strong more, and the device avalanche effect changes also obvious more.
In addition, the utility model also on the light-operated avalanche voltage characteristic basis of above-mentioned SMAPD, has proposed and has simulated the superelevation UV, visible light ratio of device spectral response.Its principle is following: suppose that incident optical power is constant; The bias voltage of SMAPD is that (for 4H-SiC, this wavelength probably is the puncture voltage under 280～290nm) correspondences to the lambda1-wavelength that produces maximum photoproduction electric field, when lambda1-wavelength is 280nm; Device produces avalanche breakdown, and photogenerated current is very big.And after lambda1-wavelength changes (for example 380nm), it is big that the Vbr of SMAPD becomes, and this moment, the bias voltage deficiency of SMAPD made device produce avalanche breakdown, and photogenerated current reduces sharply.Therefore, the UV, visible light of device spectral response ratio will improve greatly.
Simultaneously, in the time of on the basis of the light-operated avalanche voltage characteristic of 4H-SiC SMAPD, can learning illumination the puncture voltage of device be less than unglazed according to the time device puncture voltage.Therefore the utility model has proposed and has simulated the self-gravitation characteristic of SMAPD avalanche breakdown.Concrete principle is following: during illumination, the device operating voltage is set is avalanche breakdown voltage at this moment, this moment, device was in the avalanche breakdown state.Then, after the removal illumination, it is big that the device avalanche breakdown voltage becomes, and operating voltage is less than the avalanche breakdown voltage of this moment, and device is not in the avalanche breakdown state.As long as operating voltage and illumination condition are constant, along with having or not of illumination, the avalanche breakdown state of device also will be along with switch.Thereby just realized the self-gravitation characteristic of SMAPD avalanche breakdown.
The structure of the utility model is applicable to Semiconducting Silicon Materials (Si), aluminum gallium nitride (AlGaN), zinc oxide (ZnO) and carborundum (SiC).The utility model adopts 4H-SiC material experiment Analysis.
Description of drawings
Fig. 1 is a 4H-SiC SMAPD device architecture sketch map.
Fig. 2 is the change curve of 4H-SiC SMAPD puncture voltage with incident optical power density.In Fig. 2, abscissa is incident optical power density (W/cm
2), ordinate is avalanche breakdown voltage (V); Lambda1-wavelength is 280nm.
Fig. 3 is the change curve of 4H-SiC SMAPD puncture voltage with lambda1-wavelength.In Fig. 3, abscissa is lambda1-wavelength (nm), and ordinate is avalanche breakdown voltage (V); Incident optical power density is 1.0 * 10
-4W/cm
2
Fig. 4 is 4H-SiC SMAPD and bulk APD spectral response simulations figure under each incident optical power density conditions.In Fig. 5, abscissa is lambda1-wavelength (nm), and ordinate is photoresponse (a.u.); Wherein P is an incident optical power density, and bulk APD is that traditional ultraviolet avalanche photodide is 1.0 * 10 in incident power density
-2W/cm
2Condition under the spectral response simulations curve.
Fig. 5 is the self-gravitation specificity analysis figure of 4H-SiC SMAPD.In Fig. 5, abscissa is reverse biased Vr (V), and ordinate is reverse current (A/ μ m); Lambda1-wavelength and power density are respectively 280nm and 1.0 * 10
-4W/cm
2
Embodiment
Referring to Fig. 1, the utility model embodiment is provided with highly doped N
+Type substrate 2 is at highly doped N
+Type substrate 2 upper surfaces are provided with N
-Layer 3 is at N
-Layer 3 upper surface both sides are provided with highly doped P
+Type electric field strength regulating course 4 is at N
-Layer 3 mid portion upper surface is provided with N type avalanche multiplication layer 5, is provided with P at the upper surface of N type avalanche multiplication layer 5
+The ohmic contact layer 7 of type is at N type avalanche multiplication layer 5 and P
+The both sides of the ohmic contact layer 7 of type (being two shoulders of device) are respectively equipped with oxide layer 6, at highly doped N
+The lower surface of type substrate 2 (being the back side of device) is provided with positive electrode 1, at P
+The upper surface of the ohmic contact layer 7 of type is provided with metal negative electrode 8.
Be located at N
-The highly doped P of layer 3 upper surface both sides
+The best 0.6 μ m of width between the type electric field strength regulating course 4, said highly doped P
+The thickness of type electric field strength regulating course 4 is preferably 0.1 μ m.
The structure of 4H-SiC SMAPD mainly is made up of the two large divisions: the multiplication regions of block large-area absorption region and sub-micron rod structure.The design of absorption region is following: at highly doped N
+It is the non-N that painstakingly mixes of 9.0 μ m that the type substrate is gone up design thickness for 2 layers
-Layer is again through ion injection method, at N
-It is the highly doped P of 0.1 μ m that layer 3 inner surface (intermediate width be the scope of 0.6 μ m except) form thickness
+Type electric field strength regulating course 4.The multiplication regions design of sub-micron rod structure is at N
-On the surface of the middle 0.2 μ m of layer, by the thick P of 0.15 μ m
+The N type avalanche multiplication layer 5 of the ohmic contact layer 7 of type and 0.6 μ m is formed, and is that the oxide layer 6 of 0.75 μ m plays the passivation protection effect at N-layer two shoulder design one layer thickness then.At last, at sub-micron post surface and device back side design metal negative electrode 8 and positive electrode 1.Design P
+, N, N
-And N
+The doping content of layer is respectively 3.0 * 1019/cm
3, 4 * 1017/cm
3, 3.0 * 1015/cm
3With 1.0 * 1019/cm
3Structural design just simulates its photoelectric characteristic of 4H-SiC SMAPD through semiconductor device CAD simulation softward after accomplishing.
As shown in Figure 2, simulating lambda1-wavelength through semiconductor device CAD simulation softward is under the 280nm condition, and the 4H-SiCSMAPD puncture voltage is with the change curve of incident optical power density.Can find out that in the fixing condition of lambda1-wavelength, the device avalanche breakdown voltage reduces along with the increase of illumination power density.
As shown in Figure 3, simulating incident optical power density through semiconductor device CAD simulation softward is 1.0 * 10
-4W/cm
2Under the condition, 4H-SiC SMAPD puncture voltage is with the change curve of lambda1-wavelength.Can find out, in the condition of fixed-illumination power density, the big and significant change of device avalanche breakdown voltage along with the change of lambda1-wavelength.Wherein the wavelength light under spectral response maximum correspondence is according to (about 290nm), and Vbr presents minimum value.This as a result phenomenon be the distinctive character of 4H-SiC SMAPD in the utility model.
As shown in Figure 4, through semiconductor device CAD simulation softward simulate 4H-SiC SMAPD under each incident optical power density conditions with the spectral response simulations figure of traditional 4H-SiC APD.Can learn that from Fig. 4 based on its light-operated avalanche breakdown voltage characteristic, 4H-SiC SMAPD is 1 * 10 in the incident optical power density range
-6W/cm
2～1 * 10
-2W/cm
2, SMAPD UV, visible light ratio is about 2.4 * 103～2.0 * 105, than high 1～3 one magnitude of traditional 4H-SiC APD (about 6 * 102).This as a result phenomenon be the distinctive character of 4H-SiC SMAPD in the utility model.
As shown in Figure 5, simulate the self-gravitation specificity analysis figure of 4H-SiC SMAPD through semiconductor device CAD simulation softward.Can analyze the device avalanche breakdown voltage Vbr1 of hypothesis device when incident illumination is arranged from Fig. 5, the device avalanche breakdown voltage when supposing unglazed the photograph is Vbr2, at this moment Vbr1＜Vbr2.The operating voltage that device is set is Vbr1, unglazed according to the time, Vbr1 less than unglazed according to the time device avalanche breakdown voltage Vbr2, device is not in breakdown conditions, reverse dark current is very little; After illumination, the avalanche breakdown voltage of device is decreased to Vbr1, and device is in breakdown conditions, and reverse current increases severely; After illumination stopped, the avalanche breakdown voltage of device increased again, the Vbr2 before returning to, and device is not in breakdown conditions, and reverse current reduces significantly, and device is realized the self-gravitation of avalanche breakdown.This as a result phenomenon be the distinctive character of 4H-SiC SMAPD in the utility model.
Claims (3)
1. avalanche photodide; It is characterized in that being provided with highly doped N+ type substrate; Be provided with the N-layer in highly doped N+ type substrate top surface, be provided with highly doped P+ type electric field strength regulating course in N-layer upper surface both sides, be provided with N type avalanche multiplication layer at the mid portion upper surface of N-layer; Be provided with the ohmic contact layer of P+ type at the upper surface of N type avalanche multiplication layer; Both sides at the ohmic contact layer of N type avalanche multiplication layer and P+ type are respectively equipped with oxide layer, are provided with positive electrode at the lower surface of highly doped N+ type substrate, are provided with the metal negative electrode at the upper surface of the ohmic contact layer of P+ type.
2. a kind of avalanche photodide as claimed in claim 1 is characterized in that being located at the width 0.6 μ m between the highly doped P+ type electric field strength regulating course of N-layer upper surface both sides.
3. a kind of avalanche photodide as claimed in claim 1, the thickness that it is characterized in that said highly doped P+ type electric field strength regulating course is 0.1 μ m.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201122360U CN202487594U (en) | 2012-03-22 | 2012-03-22 | Avalanche photodiode |
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|---|---|---|---|
| CN2012201122360U CN202487594U (en) | 2012-03-22 | 2012-03-22 | Avalanche photodiode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505422A (en) * | 2014-10-30 | 2015-04-08 | 北京工业大学 | Self-extinguishing and self-recovering avalanche photodiode |
| EP3387680A4 (en) * | 2016-09-20 | 2019-10-09 | Limited Liability Company "Dephan" (LLC "Dephan") | Avalanche photodetectors |
-
2012
- 2012-03-22 CN CN2012201122360U patent/CN202487594U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505422A (en) * | 2014-10-30 | 2015-04-08 | 北京工业大学 | Self-extinguishing and self-recovering avalanche photodiode |
| CN104505422B (en) * | 2014-10-30 | 2017-04-05 | 北京工业大学 | A kind of self-gravitation self- recoverage avalanche photodide |
| EP3387680A4 (en) * | 2016-09-20 | 2019-10-09 | Limited Liability Company "Dephan" (LLC "Dephan") | Avalanche photodetectors |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121010 Termination date: 20180322 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |