CN202433489U - Recombination lifetime tester for microwave reflection contactless silicon crystal carrier - Google Patents
Recombination lifetime tester for microwave reflection contactless silicon crystal carrier Download PDFInfo
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- CN202433489U CN202433489U CN 201120545038 CN201120545038U CN202433489U CN 202433489 U CN202433489 U CN 202433489U CN 201120545038 CN201120545038 CN 201120545038 CN 201120545038 U CN201120545038 U CN 201120545038U CN 202433489 U CN202433489 U CN 202433489U
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- silicon crystal
- recombination lifetime
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Abstract
The utility model discloses a recombination lifetime tester for a microwave reflection contactless silicon crystal carrier. The recombination lifetime tester comprises a box, a vertical arm, a probe and a sample table, and the probe comprises a microwave source, a circulator, a detector, a wide band amplifier, a pulse light source driver, a pulsed laser and a micro-strip antenna. The wide band amplifier is positioned in the box, a silicon crystal to be detected is placed on the sample table, the micro-strip antenna is positioned right above the silicon crystal, the microwave source is connected with the circulator, the micro-strip antenna and the detector through a coaxial line, and the detector, the wide band amplifier and a digital oscilloscope are sequentially connected through high-frequency cables. Laser light transmitted by the pulsed laser obliquely irradiates on a sample, the micro-strip antenna transmits and receives microwave signals, the received microwave signals are detected by the detector and are inputted to an input end of the wide band amplifier, and the recombination lifetime of the carrier of the sample to be detected is dynamically detected by the digital oscilloscope. The recombination lifetime tester has the advantages of small size, light weight, low power consumption and low cost.
Description
Technical field
The utility model belongs to charge carrier recombination lifetime tester design field, the contactless silicon crystal charge carrier of particularly a kind of microwave reflection recombination lifetime tester.
Background technology
It is the problem of the not only serious but also common existence of semiconductor material and device industry that heavy metal is stained, and charge carrier recombination lifetime size can reflect the degree that heavy metal is stained delicately, and therefore multiple life-span appearance production arranged both at home and abroad.The high frequency photoconductivity decay life-span tester that China tradition is used is the instrument in a kind of block silicon crystal life-span of measurement of excellence, but exists the problem of electrode contact causing surface contamination when measuring.
Microwave reflection is to utilize silicon crystal under pulsed light shines, to cause the variation of conductivity; And the increase of conductivity causes the increase of microwave reflection rate; The linear relationship that both exist makes and can test surfaces not added under the situation of any contact, utilizes the measure of the change of microwave reflection power to go out the carrier lifetime of silicon crystal.
What China's photovoltaic industry was generally used at present is the WT-1000 and the WT-2000 microwave reflection photoconductivity decay life-span tester of Hungary Semilab company, and this tester exists buying expenses height and the high problem of maintenance cost (servicing time and expense).
The patent No. is that 200310108310.7 patent of invention once disclosed a kind of solar cell minority carrier lifetime analyser; Shanghai Hi-Show Photovoltaic Science &Technology Co., Ltd has produced HS-L1 minority carrier life time analyser subsequently; This instrument adopts the facing antenna that is of a size of 60 * 60 (mm); Microwave source joins through BJ-100 type microwave waveguide and waveguide type isolator; Connect with waveguide between this invention microwave source, isolator, attenuator, magic T, the wave detector, whole microwave source volume is 465 * 230 * 470 (mm); The Laser Power Devices volume is: 380 * 415 * 150 (mm); Power requirement: 220V AC, 20A, 50Hz is single-phase.There is following problem in this analyser: (1) size is too big, and it is bigger to take up room; (2) in use, the irradiation of laser and microwave shines on the magic T from both direction up and down respectively, so the microwave transmitter structure can not well be integrated in the parts with laser body, and needs are respectively to its control; (3) because this analyser volume is bigger, power consumption consumption is bigger, and cost is higher.
Event need provide the charge carrier recombination lifetime that a kind of volume is little, in light weight, power consumption is little and cost is lower tester.
The utility model content
The shortcoming that the fundamental purpose of the utility model is to overcome prior art provides the contactless silicon crystal charge carrier of a kind of microwave reflection recombination lifetime tester with not enough, and this tester volume is little, in light weight, power consumption is little, and lower with respect to the existing product cost.
The purpose of the utility model realizes through following technical scheme: the contactless silicon crystal charge carrier of microwave reflection recombination lifetime tester comprises casing, upright arm, probe, sample stage.Said upright arm, probe, sample stage all are arranged on the casing; Probe is installed on the end face of upright arm; Center probe and sample stage centrally aligned comprise microwave source, circulator, wave detector, light-pulse generator driver, pulsed laser and microstrip antenna in the probe.Said broad band amplifier is positioned at casing, and silicon crystal sample to be measured is placed on the sample stage, and said microstrip antenna is connected through coaxial cable between microwave source and circulator, microstrip antenna, the wave detector directly over sample; Wave detector, broad band amplifier, digital oscilloscope connect through high frequency cable successively.Said pulsed laser tilts to place; Pulsed laser emitted laser oblique illumination is on the silicon crystal sample; Microstrip antenna is used for the launched microwave signal and receives the microwave signal that reflects from sample surfaces; The microwave signal that receives then is detected device and detects and be input to the broad band amplifier input end; Broad band amplifier links to each other with the digital oscilloscope input channel, and the dynamic display light conductance signal of digital oscilloscope also goes out the charge carrier recombination lifetime value of testing sample through its cursor automatic tracing and measuring functional measurement.
Preferably, said microstrip antenna adopts the teflon double face copper, specifically comprises bottom copper coin, polyfluortetraethylene plate, upper strata copper coin.The bottom copper coin removes periphery one circle through corrosion and covers the copper zone; Form a rectangular transmission face that covers the copper zone as microwave signal at the middle part; The center copper cash of coaxial cable passes upper strata copper coin and polyfluortetraethylene plate from the top as inner wire middle aperture links to each other with the transmission face of bottom copper coin; Form a coaxial supply line tie point through welding, coaxial cable outer ring screen layer links to each other with the upper strata copper coin as outer conductor.Adopt this microstrip antenna can satisfy the radiation and the transmission requirement of microwave signal well, satisfy the demand of charge carrier recombination lifetime tester antenna performance.
Further, said teflon double face copper is of a size of long 20-30mm, wide 12-16mm, and high 2-6mm, two-sided is respectively that thickness is the copper face that covers of 0.01～0.1mm.
Preferably, said pulsed laser is gone into pulse light from microstrip antenna and the gap oblique fire of probe between the bottom, be radiated at microstrip antenna on the sample surfaces in zone.Sample described here specifically is meant the silicon crystal sample to be measured that is placed on the sample stage.
Preferably; Said light-pulse generator driver comprises pulse generating circuit, pulse width modulation circuit, buffer circuit, current regulating circuit, final stage switch driving circuit; Produce the square-wave signal of a fixed frequency by pulse generating circuit, the pulse width of square-wave signal is regulated, increase its current driving ability through buffer circuit then through the pulsewidth regulating circuit; Then amplify output through carrying out the first order behind the current regulating circuit; Import the final stage switch driving circuit at last, pull switch circuit, thereby pulse laser work.This light source drive can be with the pulse width modulation of laser instrument between 200ns-240 μ s, and can reach below the 25ns pulse fall time.
Concrete, the frequency of the square-wave signal that said pulse generating circuit produces is 20Hz.
As preferred version, said digital oscilloscope dynamically shows the photoconductivity decay waveform according to selected decline ratio, and the cursor automatic tracing and measuring, reads the different interval various life values of decline curve.The requirement that this oscillograph silicon crystal measurement range meets international standards: light-pulse generator adopts the laser diode of wavelength 904nm, fall time≤25ns.
The course of work of the utility model: microwave source adopts the solid signal source; Be connected through coaxial cable between microwave source and circulator, antenna, the wave detector; Microwave energy is transmitted into the silicon crystal test surfaces on the sample stage through the rectangle microstrip antenna, receives reflection wave simultaneously, and reflection wave is transferred to circulator; Be dispensed to wave detector, broad band amplifier by circulator; The signal of the photoconductive degenerative process in final reflection silicon crystal surface is gathered, is handled by the digital oscilloscope that special software is installed, and shows photoconductive exponential damping waveform with full dynamic-form, and directly demonstrates charge carrier recombination lifetime value with digital form; The carrier lifetime value that directly read this moment had both comprised that minority carrier also comprised the life-span of majority carrier, decided according to the injection level that infrared laser produces in silicon crystal.Digital oscilloscope in the utility model can pass through cursor from motion tracking by international standard, and each time period that is chosen in exponential decay curve is read the life value of specific connotation.
The utility model compared with prior art has following advantage and beneficial effect:
1, the utility model entire machine design is compact, practical, power consumption is little, and microwave source is of a size of 65 * 65 * 18 (mm), and pulsed laser source is of a size of 135 * 40 * 80 (mm), and complete machine is of a size of 365 * 415 * 410 (mm), weight≤15Kg; Power requirement: 220V AC, 0.5A, 50Hz is single-phase, actual power loss＜100W.
2, adopted coaxial cable in the utility model,, thereby eliminated radiation loss owing to the electromagnetic energy in the coaxial cable is limited between the internal and external conductor.
3, the light-pulse generator driver that adopts in the utility model can be with the pulse width modulation of pulsed laser between 200ns-240 μ s, and can reach below the 25ns pulse fall time.
Description of drawings
Fig. 1 is the one-piece construction synoptic diagram of the utility model device;
Fig. 2 is the structure principle chart of probe segment in the utility model;
Fig. 3 is the work synoptic diagram of probe segment in the utility model;
Fig. 4 is the structural representation of microstrip antenna in the utility model;
Fig. 5 is the structural principle synoptic diagram of light-pulse generator driver in the utility model;
Fig. 6 is the circuit diagram of light-pulse generator driver in the present embodiment;
Fig. 7 is the synoptic diagram that digital oscilloscope shows in the present embodiment.
Wherein among Fig. 1-5: 1-coaxial supply line tie point; 2-transmits face; The 3-polyfluortetraethylene plate; 4-upper strata copper coin; The 5-pulsed laser; The 6-coaxial cable; The 7-microstrip antenna; 8-silicon crystal sample; The 9-sample stage; The 10-probe; 11-founds arm; The 12-upper cover plate; The 13-casing; The 14-lower cover; The 15-feet.
Embodiment
Below in conjunction with embodiment and accompanying drawing the utility model is described in further detail, but the embodiment of the utility model is not limited thereto.
As shown in Figure 1; The contactless silicon crystal charge carrier of microwave reflection recombination lifetime tester; Comprise casing 13, upright arm 11, probe 10, sample stage 9, upright arm 11 is " C " font structure, and casing 13 comprises upper cover plate 12 and lower cover 14; Lower cover 14 is provided with feet 15, makes casing 13 and supporting surface that one fixed gap arranged.Upright arm 11 is installed on the box cover plate 12 together with sample stage 9, and probe 10 is installed on the other end of upright arm 11, the center of probe 10 and the centrally aligned of sample stage 9.
Shown in Fig. 2 and 3, comprise microwave source, circulator, wave detector, light-pulse generator driver, pulsed laser 5 and microstrip antenna 7 in the probe 10.Said broad band amplifier is positioned at casing 13; Link to each other with the external digital oscillograph through high frequency cable; Silicon crystal sample 8 to be measured is placed on the sample stage 9; Said microstrip antenna 7 is connected through coaxial cable 6 between microwave source and circulator, microstrip antenna 7, the wave detector directly over silicon crystal sample 8; Wave detector, broad band amplifier, digital oscilloscope connect through high frequency cable successively.Said pulsed laser 5 emitted laser oblique illumination are on silicon crystal sample 8; Microstrip antenna 7 is used for the launched microwave signal and receives the microwave signal after laser radiation; The microwave signal that receives then is detected device and detects and be input to the broad band amplifier input end; Broad band amplifier links to each other with the digital oscilloscope input channel, and digital oscilloscope is used for dynamic display light conductance signal and goes out the charge carrier recombination lifetime value of testing sample through its cursor automatic tracing and measuring functional measurement.As shown in Figure 3, said pulsed laser 5 is gone into pulse light from microstrip antenna 7 and the gap oblique fire of probe between 10 bottoms, be radiated at microstrip antenna 7 on the sample surfaces in zone.Sample described here specifically is meant the silicon crystal sample that is placed on the sample stage 9.
As shown in Figure 4; Said microstrip antenna 7 adopts the teflon double face copper; Specifically comprise bottom copper coin, polyfluortetraethylene plate 3, upper strata copper coin 4; The bottom copper coin removes a peripheral ringlet through corrosion and covers the copper zone, forms a rectangular transmission face 2 that covers the copper zone as microwave signal at the middle part, and aperture links to each other with the transmission face 2 of bottom copper coin coaxial cable 6 inner wires (center copper cash) pass upper strata copper coin 4 and polyfluortetraethylene plate 3 from the top in the middle of; Form a coaxial supply line tie point through welding, coaxial cable 6 outer conductors (outer ring screen layer) link to each other with upper strata copper coin 4.During work, transmission face 2 is over against sample, and upper strata copper coin 4 is back to sample.Adopt this microstrip antenna can satisfy the radiation and the transmission requirement of microwave signal well, satisfy the demand of charge carrier recombination lifetime tester antenna performance.The teflon double face copper is of a size of long 25mm in the present embodiment, and wide is 14mm, and height is 4mm, and two-sided is respectively that thickness is the copper face that covers of 0.05mm.
As shown in Figure 5; Said light-pulse generator driver comprises pulse generating circuit, pulse width modulation circuit, buffer circuit, current regulating circuit, final stage switch driving circuit; Produce the square-wave signal that a fixed frequency is 20Hz by pulse generating circuit, the pulse width of square-wave signal is regulated, increase its current driving ability through buffer circuit then through the pulsewidth regulating circuit; Then amplify output through carrying out the first order behind the current regulating circuit; Import the final stage switch driving circuit at last, pull switch circuit, thereby pulse laser 5 work.This light source drive can be with the pulse width modulation of laser instrument between 200ns-240 μ s, and can reach below the 25ns pulse fall time.Concrete employing circuit structure diagram as shown in Figure 6 is realized in the present embodiment; All circuit all link to each other on printed circuit board (PCB), and pulse generating circuit is formed a multivibrator by U1 (555 timer), and the oscillation frequency of this oscillator receives supply voltage and influence of temperature variation little; The frequency of pulse signal and dutycycle are by resistance R 2, R3, R4 and capacitor C 2 decisions; Frequency setting is 20Hz, and pulse signal is input to the monostalbe trigger that is made up of U2 (CD4528) and carries out pulse-width regulated, and the pulse width W=of output (R8+R9) (C5a+C5b); Wherein R8, C5a, C5b are fixed value, make pulsewidth between 200ns～600ns, change through regulating Rp1.Pulse signal after regulating is input to true/complement code buffer circuit that U3 (CD4041) constitutes; Take out the true value signal, the pulse current driving force after the output strengthens, through the electric current of Rp2 scalable output pulse signal; BLV11 further amplifies through the very high frequency(VHF) pliotron; Amplified pulse signal promotes RF power transistor MRF899, and operating frequency range can be crossed 800～960MHz when signal voltage reached 26V, guaranteed pulse signal have extremely fast fall time (＜25ns).
As shown in Figure 7; Said digital oscilloscope is according to two kinds of definition (body life time and 1/e life-span) of silicon crystal carrier lifetime in the world and the national standard; On original function basis, increased its cursor automatic tracing and measuring pattern; Can obtain the time read of various particular ranges on the photoconductive exponential decay curve according to selected decline ratio, the life value that can draw two kinds of different definition also directly is presented on the screen.For example in Fig. 7, cursor is moved to A point region, can directly on screen, demonstrate fall time and decline ratio.
Present embodiment except that following characteristics other structures with embodiment 1: the teflon double face copper is of a size of long 20mm in the present embodiment, and wide is 12mm, and height is 2mm, and two-sided is respectively that thickness is the copper face that covers of 0.01mm.
Present embodiment except that following characteristics other structures with embodiment 1: the teflon double face copper is of a size of long 30mm in the present embodiment, and wide is 16mm, and height is 6mm, and two-sided is respectively that thickness is the copper face that covers of 0.1mm.
The foregoing description is the utility model preferred implementation; But the embodiment of the utility model is not restricted to the described embodiments; Other any do not deviate from change, the modification done under spirit and the principle of the utility model, substitutes, combination, simplify; All should be the substitute mode of equivalence, be included within the protection domain of the utility model.
Claims (6)
1. the contactless silicon crystal charge carrier of microwave reflection recombination lifetime tester is characterized in that, comprises casing, upright arm, probe, sample stage; Said upright arm, probe, sample stage all are arranged on the casing; Probe is installed on the end face of upright arm, and center probe and sample stage centrally aligned comprise microwave source, circulator, wave detector, light-pulse generator driver, pulsed laser and microstrip antenna in the probe; Said broad band amplifier is positioned at casing; Silicon crystal sample to be measured is placed on the sample stage, and said microstrip antenna is connected through coaxial cable between microwave source and circulator, microstrip antenna, the wave detector directly over sample; Wave detector, broad band amplifier, digital oscilloscope connect through high frequency cable successively, and said pulsed laser tilts to place.
2. the contactless silicon crystal charge carrier of microwave reflection according to claim 1 recombination lifetime tester; It is characterized in that; Said microstrip antenna adopts the teflon double face copper; Specifically comprise bottom copper coin, polyfluortetraethylene plate, upper strata copper coin; Said bottom copper coin removes periphery one circle through corrosion and covers the copper zone, forms a rectangular transmission face that covers the copper zone as microwave signal at the middle part, and the center copper cash of coaxial cable passes upper strata copper coin and polyfluortetraethylene plate from the top as inner wire middle aperture links to each other with the transmission face of bottom copper coin; Form a coaxial supply line tie point through welding, coaxial cable outer ring screen layer links to each other with the upper strata copper coin as outer conductor.
3. the contactless silicon crystal charge carrier of microwave reflection according to claim 2 recombination lifetime tester; It is characterized in that said teflon double face copper is of a size of long 20-30mm, wide 12-16mm; High 2-6mm, two-sided is respectively that thickness is the copper face that covers of 0.01 ~ 0.1mm.
4. the contactless silicon crystal charge carrier of microwave reflection according to claim 1 recombination lifetime tester; It is characterized in that; Said pulsed laser is gone into pulse light from microstrip antenna and the gap oblique fire of probe between the bottom, be radiated at microstrip antenna on the sample surfaces in zone.
5. the contactless silicon crystal charge carrier of microwave reflection according to claim 1 recombination lifetime tester; It is characterized in that said light-pulse generator driver comprises pulse generating circuit, pulse width modulation circuit, buffer circuit, current regulating circuit, final stage switch driving circuit, produce the square-wave signal of a fixed frequency by pulse generating circuit; Through the pulsewidth regulating circuit pulse width of square-wave signal is regulated; Increase its current driving ability through buffer circuit then, then amplify output, import the final stage switch driving circuit at last through carrying out the first order behind the current regulating circuit; Pull switch circuit, thereby pulse laser work.
6. the contactless silicon crystal charge carrier of microwave reflection according to claim 5 recombination lifetime tester; It is characterized in that the frequency of the square-wave signal that said pulse generating circuit produces is 20Hz; Pulse fall time≤25ns, pulse width adjustable extent are 200ns ~ 240 μ s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120545038 CN202433489U (en) | 2011-12-22 | 2011-12-22 | Recombination lifetime tester for microwave reflection contactless silicon crystal carrier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120545038 CN202433489U (en) | 2011-12-22 | 2011-12-22 | Recombination lifetime tester for microwave reflection contactless silicon crystal carrier |
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| CN202433489U true CN202433489U (en) | 2012-09-12 |
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| CN 201120545038 Expired - Lifetime CN202433489U (en) | 2011-12-22 | 2011-12-22 | Recombination lifetime tester for microwave reflection contactless silicon crystal carrier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104266960A (en) * | 2014-10-09 | 2015-01-07 | 广州市昆德科技有限公司 | Carrier recombination lifetime test system adopting scanning type microwave reflection method and test method |
| CN109100631A (en) * | 2018-09-21 | 2018-12-28 | 广州市昆德科技有限公司 | Silicon single crystal carrier lifetime measurement method |
| CN111487260A (en) * | 2019-01-25 | 2020-08-04 | 株式会社迪思科 | Inspection apparatus |
-
2011
- 2011-12-22 CN CN 201120545038 patent/CN202433489U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104266960A (en) * | 2014-10-09 | 2015-01-07 | 广州市昆德科技有限公司 | Carrier recombination lifetime test system adopting scanning type microwave reflection method and test method |
| CN109100631A (en) * | 2018-09-21 | 2018-12-28 | 广州市昆德科技有限公司 | Silicon single crystal carrier lifetime measurement method |
| CN111487260A (en) * | 2019-01-25 | 2020-08-04 | 株式会社迪思科 | Inspection apparatus |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120912 |
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| CX01 | Expiry of patent term |