CN202384178U - Capacitor structure with internal laminated bus bars - Google Patents
Capacitor structure with internal laminated bus bars Download PDFInfo
- Publication number
- CN202384178U CN202384178U CN2011205114284U CN201120511428U CN202384178U CN 202384178 U CN202384178 U CN 202384178U CN 2011205114284 U CN2011205114284 U CN 2011205114284U CN 201120511428 U CN201120511428 U CN 201120511428U CN 202384178 U CN202384178 U CN 202384178U
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- China
- Prior art keywords
- busbar
- capacitor
- bus bar
- shell
- weld part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 74
- 238000003466 welding Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 238000010030 laminating Methods 0.000 abstract 1
- 238000004382 potting Methods 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The utility model discloses a capacitor with internal laminated bus bars. The capacitor structure comprises a first bus boar, a second bus bar, a capacitor core and a shell; the bottoms of the first bus bar and the second bus bar are mutually laminated and an insulating medium layer is arranged at the laminating part; the first bus bar and the second bus bar are respectively provided with an external connecting terminal and a welding part for welding the capacitor core, the external connecting terminal of one bus bar is connected with a positive or negative electrode of the circuit, and the external connecting terminal of the other bus bar is connected a negative or positive electrode of the circuit, two ends of the capacitor core are respectively with welding parts of two bus bars; an internal component composed of the first bus bar, the second bus bar and the capacitor core is arranged in the shell and fixed with the shell through a potting body. The capacitor structure provided by the utility model reduces the self-inductance of the capacitor since the current direction between the bus bars is different from that between the bus bar and the capacitor core and the inductance between the bus bars and the inductance between the bus bar and the capacitor core are mutually reduced. The structure further enables the current at each position in the capacitor be more uniform, and the integral electrical property of the capacitor is more excellent.
Description
Technical field
The utility model relates to a kind of capacitor, particularly relates to a kind of capacitor arrangement that has inner stack bus bar.
Background technology
Capacitor is one of a large amount of electronic components that use in the electronic equipment, is widely used at a distance from straight coupling, bypass, filtering, resonant tank, power conversion, aspects such as control circuit.
The dc bus filtering capacitor is mainly used in filtering and absorbs spike, so its characteristics must be that capacity is big, self-induction is little.The big a plurality of fuse parallel-connection structures of the inner employing of capacitor that require of capacity.Traditional busbar current path is tediously long, and the inductance in the current path is subdued not obvious, causes the whole self-induction of capacitor too big, is unfavorable for the absorption of peak voltage.
The utility model content
The purpose of the utility model is to overcome the deficiency of prior art; A kind of capacitor arrangement that has inner stack bus bar is provided; Through between the busbar and the inductance between busbar and the fuse offset, reduce the self-induction of capacitor, thereby improve the ability that it absorbs peak voltage greatly.
The utility model solves the technical scheme that its technical problem adopted: a kind of capacitor arrangement that has inner stack bus bar comprises first busbar, second busbar, capacitor body and shell; First busbar is mutually range upon range of with the bottom of second busbar and be provided with insulating medium layer so that two busbar electricity are kept apart at range upon range of place; Be respectively equipped with external connection terminals and the weld part that is used for welding capacitor body on first busbar and second busbar; The plus or minus utmost point of the external connection terminals connecting circuit of one of them in two busbars; The external connection terminals connecting circuit of an other busbar negative or anodal; Capacitor body is located between the weld part of two busbars, and the two ends of capacitor body are connected with the weld part of two busbars respectively; The internal structure that is made up of first busbar, second busbar and capacitor body is contained in the said shell and with said shell and fixes through the embedding body.
Described first busbar and second busbar are formed by the red copper material respectively.
Described insulating medium layer is an insulating paper.
Described weld part is the network structure that is arranged on the side of busbar.
A kind of capacitor arrangement that has inner stack bus bar of the utility model; Be that to adopt material be two busbars i.e. first busbar and second busbar of red copper; It is thereby first busbar is mutually range upon range of with the bottom of second busbar and be provided with insulating medium layer at range upon range of place and form the stack bus bar structure so that two busbar electricity are kept apart; And with this stack bus bar as the capacitor internal structure, all have external connection terminals on the two-layer busbar respectively and be used for welding the weld part of capacitor body.The plus or minus utmost point of one deck busbar connecting circuit in the two-layer busbar, one deck busbar connecting circuit is negative or anodal in addition, keeps apart with thin dielectric in the middle of the busbar.The distance of distance and busbar and fuse is all nearer between the busbar, and the sense of current between the busbar during work is inconsistent, and the inductance that produces on the busbar is subdued each other; Between busbar and the fuse the sense of current inconsistent, on the busbar with fuse on the inductance that produces subdue each other.
During making,, then stack bus bar and fuse assembling are welded, after the completion, refill in the shell of correspondence embedding and fix earlier with two busbar laminations.The outside connecting circuit of busbar, the inner capacitor body that connects.Keep apart with dielectric between the busbar.The overlapping region that the part area is arranged between the busbar has certain effect to reducing inductance.This structure has the characteristics of the simple and low self-induction of technology.
The beneficial effect of the utility model is, owing to adopted first busbar is mutually range upon range of with the bottom of second busbar and be provided with insulating medium layer so that two busbar electricity are kept apart at range upon range of place; And on first busbar and second busbar, be respectively equipped with external connection terminals and the weld part that is used for welding capacitor body; In two busbars one of them is through the plus or minus utmost point of its external connection terminals connecting circuit; An other busbar is negative or anodal through its external connection terminals connecting circuit; Capacitor body is located between the weld part of two busbars, and the two ends of capacitor body are connected with the weld part of two busbars respectively; The internal structure that is made up of first busbar, second busbar and capacitor body is contained in the said shell and with said shell and fixes through the embedding body.This structure utilize between busbar and busbar and capacitor body between the sense of current different; Inductance is subdued each other; Thereby reduced the self-induction of capacitor greatly; The ability that makes capacitor absorb peak voltage is strengthened greatly, has saved the use of IGBT absorption capacitor on the circuit in the design of some this low self-induction in application scenario, has saved circuit cost; This structure makes that also the electric current of inner each position of capacitor is more even, and the capacitor overall performance electrical performance is excellent more.
Below in conjunction with accompanying drawing and embodiment the utility model is done further explain; But a kind of capacitor arrangement that has inner stack bus bar of the utility model is not limited to embodiment.
Description of drawings
Fig. 1 is the organigram of the stack bus bar of the utility model;
Fig. 2 is stack bus bar of the utility model and the organigram that capacitor body fits together.
Embodiment
Shown in accompanying drawing, a kind of capacitor arrangement that has inner stack bus bar of the utility model comprises first busbar 1, second busbar 2, capacitor body 3 and shell (not shown); First busbar 1 is mutually range upon range of with the bottom of second busbar 2 and be provided with insulating medium layer 4 so that two busbar electricity are kept apart at range upon range of place; Be respectively equipped with external connection terminals and the weld part that is used for welding capacitor body on first busbar 1 and second busbar 2; The external connection terminals 11 and the weld part 12 of first busbar 1 all are located at same end; The external connection terminals 21 and the weld part of second busbar 2 were located at two ends in 22 minutes; First busbar 1 is with after the bottom of second busbar 2 is mutually range upon range of; The external connection terminals 11 of first busbar 1 and the external connection terminals 21 of second busbar 2 are in the same side of capacitor arrangement; The weld part 12 of first busbar 1 and the weld part 22 of second busbar 2 are in the both sides of capacitor arrangement respectively, and first busbar 1 is through the plus or minus utmost point of its external connection terminals 11 connecting circuits, and second busbar 2 is negative or anodal through its external connection terminals 21 connecting circuits; Capacitor body 3 is located between the weld part 22 of weld part 12 and second busbar 2 of first busbar 1, and the two ends of capacitor body 3 are connected with the weld part 12 of first busbar 1 and the weld part 22 of second busbar 2 respectively; The internal structure that is made up of first busbar 1, second busbar 2 and capacitor body 3 is contained in the said shell and with said shell and fixes through embedding body (also not shown among the figure).
Described first busbar 1 and second busbar 2 are formed by the red copper material respectively.
Described insulating medium layer 4 is an insulating paper.
The weld part 12 of described first busbar 1 is the network structure that is arranged on the side of first busbar 1.
The weld part 22 of described second busbar 2 is the network structure that is arranged on the side of second busbar 2.
A kind of capacitor arrangement that has inner stack bus bar of the utility model, the material of busbar is generally red copper.It is leading-out terminal that the terminal of 4 band circular holes is respectively arranged on first busbar 1 and second busbar 2, i.e. the external connection terminals 21 of the external connection terminals 11 of first busbar 1 and second busbar 2 is used for connecing that IGBT terminal or external power supply use.Other one of first busbar 1 and second busbar 2 respectively has row's net as weld part; The i.e. weld part 22 of the weld part 12 of first busbar 1 and second busbar 2; This net is to be used for welding together with capacitor body 3; Make two busbars and capacitor body 3 be connected in one, shown in accompanying drawing 2.
Separate with insulating paper 4 in the middle of first busbar 1 and second busbar 2, insulating paper 4 material chosen conditions are: heatproof is high, nonhygroscopic, pliability is good, voltage withstand class is enough.Insulating paper 4 THICKNESS CALCULATION need be considered enough withstand voltage surpluses.The insulation of considered bus bar edge during insulating paper 4 designs.
Two busbars (i.e. first busbar 1 and second busbar 2) are put into capacitor body 3 wherein, and are welded with two busbars (i.e. first busbar 1 and second busbar 2), shown in accompanying drawing 2 after having assembled with insulating paper 4.Electric current one-in-and-one-out when capacitor uses in the leading-out terminal of first busbar 1 and second busbar 2, in the opposite direction, shown in accompanying drawing 1.So, the current opposite in direction of the sense of current of first busbar, 1 main part and second busbar, 2 main parts or inconsistent; Also have; The sense of current of second busbar, 2 main parts and capacitor body 3 current opposite in direction; Specifically see shown in the accompanying drawing 2,, adopt the capacitor self-induction of this structure to reduce greatly according to parallel conductor current opposite in direction or inductance can be subdued each other when inconsistent principle.Experiment showed, that the structure inductance that the comparable electrode of not considering that self-induction is offset of the inductance of this kind structure is drawn reduces more than 25%, improves the ability that this capacitor absorbs peak voltage greatly.And this is simple in structure, implements to be easy to, and is easy to be used for actual production.
Traditional busbar current path is tediously long, and the inductance in the current path is subdued not obvious, causes the whole self-induction of capacitor too big, is unfavorable for the absorption of peak voltage.And inner stack bus bar structure has just in time solved this difficult point, it made full use of between busbar and between busbar and fuse inductance subdue the self-induction that reduces capacitor each other.Make the self-induction of capacitor reach the self-induction requirement of absorption capacitor.
The foregoing description only is used for further specifying a kind of capacitor arrangement that has inner stack bus bar of the utility model; But the utility model is not limited to embodiment; Every technical spirit according to the utility model all falls in the protection range of the utility model technical scheme any simple modification, equivalent variations and modification that above embodiment did.
Claims (4)
1. a capacitor arrangement that has inner stack bus bar is characterized in that: comprise first busbar, second busbar, capacitor body and shell; First busbar is mutually range upon range of with the bottom of second busbar and be provided with insulating medium layer so that two busbar electricity are kept apart at range upon range of place; Be respectively equipped with external connection terminals and the weld part that is used for welding capacitor body on first busbar and second busbar; The plus or minus utmost point of the external connection terminals connecting circuit of one of them in two busbars; The external connection terminals connecting circuit of an other busbar negative or anodal; Capacitor body is located between the weld part of two busbars, and the two ends of capacitor body are connected with the weld part of two busbars respectively; The internal structure that is made up of first busbar, second busbar and capacitor body is contained in the said shell and with said shell and fixes through the embedding body.
2. the capacitor arrangement that has inner stack bus bar according to claim 1 is characterized in that: described first busbar and second busbar are formed by the red copper material respectively.
3. the capacitor arrangement that has inner stack bus bar according to claim 1 and 2 is characterized in that: described insulating medium layer is an insulating paper.
4. the capacitor arrangement that has inner stack bus bar according to claim 1 is characterized in that: described weld part is the network structure that is arranged on the side of busbar.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011205114284U CN202384178U (en) | 2011-12-07 | 2011-12-07 | Capacitor structure with internal laminated bus bars |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011205114284U CN202384178U (en) | 2011-12-07 | 2011-12-07 | Capacitor structure with internal laminated bus bars |
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CN202384178U true CN202384178U (en) | 2012-08-15 |
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CN2011205114284U Expired - Lifetime CN202384178U (en) | 2011-12-07 | 2011-12-07 | Capacitor structure with internal laminated bus bars |
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CN (1) | CN202384178U (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103021656A (en) * | 2012-12-11 | 2013-04-03 | 安徽铜峰电子股份有限公司 | Low-inductance and large-power power electronic capacitor |
CN103065805A (en) * | 2013-01-08 | 2013-04-24 | 周旺龙 | Rectangular aluminum electrolytic capacitor module with heat dissipation surface and structure of module |
CN104934223A (en) * | 2015-06-28 | 2015-09-23 | 无锡宸瑞新能源科技有限公司 | Thin-film capacitor for automobile |
WO2016082634A1 (en) * | 2014-11-28 | 2016-06-02 | Byd Company Limited | Thin-film capacitor for electric vehicle |
WO2016082732A1 (en) * | 2014-11-28 | 2016-06-02 | Byd Company Limited | Film capacitor |
WO2016082731A1 (en) * | 2014-11-28 | 2016-06-02 | Byd Company Limited | Film capacitor |
CN105957711A (en) * | 2016-06-25 | 2016-09-21 | 上海鹰峰电子科技股份有限公司 | Interface terminal of thin-film capacitor |
CN107039176A (en) * | 2017-06-02 | 2017-08-11 | 宁波市江北九方和荣电气有限公司 | It is a kind of to reduce the capacitance connection structure of inductance |
CN107403780A (en) * | 2017-08-30 | 2017-11-28 | 扬州国扬电子有限公司 | A kind of cross arrangement electrode combination and power model |
CN107507706A (en) * | 2017-07-27 | 2017-12-22 | 厦门法拉电子股份有限公司 | It is a kind of suitable for ring-plate capacitor of wheel hub motor and preparation method thereof |
US10102975B2 (en) | 2014-11-28 | 2018-10-16 | Byd Company Limited | Film capacitor |
CN109841407A (en) * | 2017-11-21 | 2019-06-04 | Tdk电子股份有限公司 | Capacitor |
CN110462770A (en) * | 2017-03-21 | 2019-11-15 | 松下知识产权经营株式会社 | Capacitor |
CN111630616A (en) * | 2017-11-21 | 2020-09-04 | Tdk电子股份有限公司 | Very low inductance buss bar for capacitor assembly |
JP2021136324A (en) * | 2020-02-27 | 2021-09-13 | ニチコン株式会社 | Capacitor and manufacturing method of the same |
WO2021217561A1 (en) * | 2020-04-30 | 2021-11-04 | Abb Power Grids Switzerland Ag | Capacitor assembly and dry-type capacitor |
CN114068182A (en) * | 2020-08-07 | 2022-02-18 | 株洲变流技术国家工程研究中心有限公司 | Non-inductive film capacitor and manufacturing method thereof |
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2011
- 2011-12-07 CN CN2011205114284U patent/CN202384178U/en not_active Expired - Lifetime
Cited By (31)
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CN103021656A (en) * | 2012-12-11 | 2013-04-03 | 安徽铜峰电子股份有限公司 | Low-inductance and large-power power electronic capacitor |
CN103065805A (en) * | 2013-01-08 | 2013-04-24 | 周旺龙 | Rectangular aluminum electrolytic capacitor module with heat dissipation surface and structure of module |
CN103065805B (en) * | 2013-01-08 | 2017-12-19 | 周旺龙 | A kind of rectangular block shape has the aluminium electrolutic capacitor module and structure of radiating surface |
US10102975B2 (en) | 2014-11-28 | 2018-10-16 | Byd Company Limited | Film capacitor |
WO2016082634A1 (en) * | 2014-11-28 | 2016-06-02 | Byd Company Limited | Thin-film capacitor for electric vehicle |
WO2016082732A1 (en) * | 2014-11-28 | 2016-06-02 | Byd Company Limited | Film capacitor |
WO2016082731A1 (en) * | 2014-11-28 | 2016-06-02 | Byd Company Limited | Film capacitor |
US10153089B2 (en) | 2014-11-28 | 2018-12-11 | Byd Company Limited | Thin-film capacitor for electric vehicle |
US10109426B2 (en) | 2014-11-28 | 2018-10-23 | Byd Company Limited | Film capacitor |
CN104934223A (en) * | 2015-06-28 | 2015-09-23 | 无锡宸瑞新能源科技有限公司 | Thin-film capacitor for automobile |
CN104934223B (en) * | 2015-06-28 | 2017-10-24 | 无锡宸瑞新能源科技有限公司 | A kind of automobile thin film capacitor |
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CN107039176A (en) * | 2017-06-02 | 2017-08-11 | 宁波市江北九方和荣电气有限公司 | It is a kind of to reduce the capacitance connection structure of inductance |
CN107039176B (en) * | 2017-06-02 | 2018-07-31 | 宁波市江北九方和荣电气有限公司 | A kind of capacitance connection structure reducing inductance |
CN107507706A (en) * | 2017-07-27 | 2017-12-22 | 厦门法拉电子股份有限公司 | It is a kind of suitable for ring-plate capacitor of wheel hub motor and preparation method thereof |
CN107403780A (en) * | 2017-08-30 | 2017-11-28 | 扬州国扬电子有限公司 | A kind of cross arrangement electrode combination and power model |
CN109841407A (en) * | 2017-11-21 | 2019-06-04 | Tdk电子股份有限公司 | Capacitor |
CN111630616B (en) * | 2017-11-21 | 2022-04-05 | Tdk电子股份有限公司 | Very low inductance buss bar for capacitor assembly |
CN111630616A (en) * | 2017-11-21 | 2020-09-04 | Tdk电子股份有限公司 | Very low inductance buss bar for capacitor assembly |
US11404215B2 (en) | 2017-11-21 | 2022-08-02 | Tdk Electronics Ag | Capacitor |
CN109841407B (en) * | 2017-11-21 | 2022-09-09 | Tdk电子股份有限公司 | Capacitor with improved capacitance |
JP2021136324A (en) * | 2020-02-27 | 2021-09-13 | ニチコン株式会社 | Capacitor and manufacturing method of the same |
JP7370674B2 (en) | 2020-02-27 | 2023-10-30 | ニチコン株式会社 | Capacitor and its manufacturing method |
WO2021217561A1 (en) * | 2020-04-30 | 2021-11-04 | Abb Power Grids Switzerland Ag | Capacitor assembly and dry-type capacitor |
CN114068182A (en) * | 2020-08-07 | 2022-02-18 | 株洲变流技术国家工程研究中心有限公司 | Non-inductive film capacitor and manufacturing method thereof |
CN114068182B (en) * | 2020-08-07 | 2023-07-25 | 株洲变流技术国家工程研究中心有限公司 | Non-inductive film capacitor and manufacturing method thereof |
WO2024183620A1 (en) * | 2023-03-03 | 2024-09-12 | 比亚迪股份有限公司 | Electrical device, electrical device assembly, motor controller and vehicle |
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Granted publication date: 20120815 |