CN202323110U - Production system for solar silicon bars - Google Patents

Production system for solar silicon bars Download PDF

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Publication number
CN202323110U
CN202323110U CN2011204580629U CN201120458062U CN202323110U CN 202323110 U CN202323110 U CN 202323110U CN 2011204580629 U CN2011204580629 U CN 2011204580629U CN 201120458062 U CN201120458062 U CN 201120458062U CN 202323110 U CN202323110 U CN 202323110U
Authority
CN
China
Prior art keywords
gas
production system
argon
single crystal
solar silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011204580629U
Other languages
Chinese (zh)
Inventor
张浩强
王会敏
李红友
张鹏
董朝海
闫建辉
鲁立宁
闫广宁
李建涛
韩晓亮
闫江波
王怡然
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NINGJIN SONGGONG ELECTRONIC MATERIAL Co Ltd
Original Assignee
NINGJIN SONGGONG ELECTRONIC MATERIAL Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NINGJIN SONGGONG ELECTRONIC MATERIAL Co Ltd filed Critical NINGJIN SONGGONG ELECTRONIC MATERIAL Co Ltd
Priority to CN2011204580629U priority Critical patent/CN202323110U/en
Application granted granted Critical
Publication of CN202323110U publication Critical patent/CN202323110U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a production system for solar silicon bars, which comprises a single crystal furnace, an argon tank and a gas pipeline which communicates the single crystal furnace with the argon tank, and further comprises a nitrogen tank; and a gas distributor is arranged on the gas pipeline, the gas outlet end of the gas distributor is connected with the inner cavity of the signal crystal furnace through a gas outlet pipe, and the two gas inlet ends of the gas distributor are respectively connected with the argon tank and the nitrogen tank through gas inlet pipes. According to the production system for solar silicon bars, a protective gas is replaced by nitrogen during a cooling stage, argon is used as the protective gas during the single crystal growing process, accordingly, double-path gas supply is realized, and the production system for solar silicon bars is easy to operate during the use. According to the production system for solar silicon bars, the cost can be effectively reduced under the condition of ensuring the quality of single crystals.

Description

A kind of production system of sun power silicon rod
Technical field
The utility model relates to a kind of production system of sun power silicon rod, is applied to the photovoltaic field.
Background technology
In the production process of sun power silicon rod,, adopt argon gas for a long time as the shielding gas in the single crystal growth process owing to receive the influence of traditional technology always; Argon gas is in dominant position as shielding gas always; Under the requirement because of monocrystalline growing process, colling stages requires to strengthen the consumption of argon gas, so that shorten the decay period; But argon gas is comparatively expensive, makes production cost higher.
The content of utility model
The technical problem to be solved of the utility model provides a kind of production system that satisfies the sun power silicon rod that silicon single crystal rod production can reduce cost again.
The technical scheme that the utility model is taked is: a kind of production system of sun power silicon rod, comprise single crystal growing furnace, argon tanks and the gas piping that is communicated with single crystal growing furnace and argon tanks, and also comprise nitrogen pot; On said gas piping, be provided with gas diverter, the gas output end of gas diverter is through the brilliant furnace chamber of escape pipe order, and two gas input terminuss of gas diverter connect argon tanks and nitrogen pot through inlet pipe respectively.
Wherein, on the inlet pipe between described gas diverter and argon tanks, the nitrogen pot, be respectively arranged with valve switch.
Wherein, described escape pipe is a metallic hose, and described inlet pipe is a stainless steel pipes.
The beneficial effect that the utility model is compared with prior art obtained is:
1, the utility model mainly is that shielding gas changes nitrogen into when realizing colling stages, in the single crystal growth process with argon gas as shielding gas, thereby realization parallel gas feed, in use easy handling.
2, the utility model can effectively reduce cost in the situation that guarantees the monocrystalline quality.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is further described.
Fig. 1 is the structural representation of the utility model.A kind of production system of sun power silicon rod comprises single crystal growing furnace 1, argon tanks and the gas piping that is communicated with single crystal growing furnace and argon tanks, also comprises nitrogen pot; On said gas piping, be provided with gas diverter 2, the gas output end of gas diverter connects single crystal growing furnace 1 inner chamber through escape pipe 3, and two gas input terminuss of gas diverter 2 connect argon tanks and nitrogen pot through inlet pipe 4 respectively.Wherein, on the inlet pipe 4 between described gas diverter 2 and argon tanks, the nitrogen pot, be respectively arranged with valve switch 5.Among the embodiment, escape pipe 3 adopts metallic hose, and inlet pipe 4 adopts stainless steel pipes.
During work, non-colling stages uses argon gas as shielding gas, when waiting to get into the crystal pulling colling stages, with the argon gas valve closes, switches to the nitrogen air feed simultaneously, keeps the pressure in the stove constant, is adjusted to normal air feed state after waiting to tear open stove.

Claims (3)

1. the production system of a sun power silicon rod comprises single crystal growing furnace, argon tanks and the gas piping that is communicated with single crystal growing furnace and argon tanks, it is characterized in that: also comprise nitrogen pot; On said gas piping, be provided with gas diverter, the gas output end of gas diverter is through the brilliant furnace chamber of escape pipe order, and two gas input terminuss of gas diverter connect argon tanks and nitrogen pot through inlet pipe respectively.
2. the production system of a kind of sun power silicon rod according to claim 1 is characterized in that: on the inlet pipe between described gas diverter and argon tanks, the nitrogen pot, be respectively arranged with valve switch.
3. the production system of a kind of sun power silicon rod according to claim 1 is characterized in that: described escape pipe is a metallic hose, and described inlet pipe is a stainless steel pipes.
CN2011204580629U 2011-11-17 2011-11-17 Production system for solar silicon bars Expired - Fee Related CN202323110U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011204580629U CN202323110U (en) 2011-11-17 2011-11-17 Production system for solar silicon bars

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011204580629U CN202323110U (en) 2011-11-17 2011-11-17 Production system for solar silicon bars

Publications (1)

Publication Number Publication Date
CN202323110U true CN202323110U (en) 2012-07-11

Family

ID=46435097

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011204580629U Expired - Fee Related CN202323110U (en) 2011-11-17 2011-11-17 Production system for solar silicon bars

Country Status (1)

Country Link
CN (1) CN202323110U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109695056A (en) * 2019-01-28 2019-04-30 内蒙古中环光伏材料有限公司 A kind of nitrogen crystal pulling pipeline and nitrating crystal-pulling technique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109695056A (en) * 2019-01-28 2019-04-30 内蒙古中环光伏材料有限公司 A kind of nitrogen crystal pulling pipeline and nitrating crystal-pulling technique

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: Hebei Ningjin Songgong Semiconductor Co., Ltd.

Assignor: Ningjin Songgong Electronic Material Co., Ltd.

Contract record no.: 2014130000070

Denomination of utility model: Production system for solar silicon bars

Granted publication date: 20120711

License type: Exclusive License

Record date: 20140507

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120711

Termination date: 20181117