CN202309516U - High voltage charge pump control circuit - Google Patents
High voltage charge pump control circuit Download PDFInfo
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- CN202309516U CN202309516U CN2011204266082U CN201120426608U CN202309516U CN 202309516 U CN202309516 U CN 202309516U CN 2011204266082 U CN2011204266082 U CN 2011204266082U CN 201120426608 U CN201120426608 U CN 201120426608U CN 202309516 U CN202309516 U CN 202309516U
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- charge pump
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- control circuit
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Abstract
Disclosed is a high voltage charge pump control circuit, characterized by comprising a charge pump circuit, a drive circuit, a logic control circuit, a temperature protection circuit, an oscillator, a comparator, a voltage reference circuit, dividing resistors R1 and R2, and a feedback capacitor C1, wherein the charge pump circuit is composed of 12-grade charge pump units, with the output of the prior grade being the input of the following grade; the input voltage is the low voltage ranging from 4V to 6V while the output voltage can be set according to actual needs; the output of the voltage reference circuit is 1.2V; and the frequency of the oscillator is 2MHz, with duty ratio being around 50%. The high voltage charge pump control circuit can convert the relatively low input voltage into high voltage above 30V. Moreover, compared with an inductance type boosted circuit, the high voltage charge pump control circuit features low cost, smaller PCB area, and thinner PCB thickness.
Description
Technical field
The utility model belongs to simulation integrated power supply chip technology field, is specifically related to a kind of high tension charge pump circuit.
Background technology
Along with the develop rapidly of electronics portable product, the demand of power management chip also sharply increases.Inductance type boost DC-DC and charge pump boost DC-DC are arranged at DC-DC usually aspect boosting.Inductance type boost DC-DC efficient is higher, but contains inductance, so the pcb board area is big, and cost is high.Charge pump utilizes electric capacity to realize the transfer of electric charge and energy, thereby possesses advantages such as no inductance element, cost is low, the pcb board area is little, so this type power management chip has special advantages with respect to inductance type DC-DC.
Summary of the invention
The utility model adopts following technical scheme:
A kind of high voltage electricity pump control circuit is characterized in that: comprise charge pump circuit, drive circuit, logic control circuit, temperature protection circuit, oscillator, comparator, reference voltage circuit, divider resistance R1, R2, feedback capacity C1; Said logic control circuit is used to control charge pump work and shutoff; The output signal that said drive circuit is used to strengthen said logic control circuit drives the electric capacity of charge pump; It is breaking circuit that said temperature protection circuit is used for surpassing design temperature in temperature; The output of said oscillator, temperature protection circuit, comparator connects the input of said logic control circuit respectively; The output of said logic control circuit is connected with the input of said drive circuit; The output of said drive circuit is connected with the drive end of said charge pump circuit; Said divider resistance R1, R2 series connection; The end of divider resistance R1 is connected with the output of said charge pump circuit, and the other end links to each other with the end of divider resistance R2, the other end ground connection of said divider resistance R2; Said feedback capacity C1 is parallelly connected with divider resistance R1; The tie point of said divider resistance R1, R2 is connected with the input of said comparator, and another input of said comparator is connected with said reference voltage circuit output.
It is further characterized in that: said charge pump circuit is made up of 12 grades of charge pump unit, and previous stage is output as the input of back one-level, and input voltage is 4V ~ 6V; Said reference voltage circuit is output as 1.2V; Can regulate the ratio of said divider resistance R1 and R2, thereby obtain different output voltage; The frequency of said oscillator is 2MHz, and duty ratio is about 50%.
Further said temperature protection circuit is 145 ℃ in the temperature protection temperature.
The utility model can be imported lower voltage and be increased to more than the 30V, has simultaneously that cost is low, an advantage such as area and thickness are little.
Description of drawings
Fig. 1 is the utility model circuit block diagram;
Fig. 2 is 12 grades of charge pump unit sketch mapes;
Fig. 3 is temperature protection circuit figure;
The emulation output map of Fig. 4 temperature protection circuit;
Fig. 5 pierce circuit figure;
Fig. 6 pierce circuit simulation result figure;
Fig. 7 is the oscillogram of the utility model output voltage;
1, charge pump circuit; 2, drive circuit; 3, logic control circuit; 4, temperature protection circuit; 5, oscillator; 6, comparator; 7, reference voltage circuit.
Embodiment
A kind of high voltage electricity pump control circuit as shown in Figure 1 comprises charge pump circuit 1, drive circuit 2, logic control circuit 3, temperature protection circuit 4, oscillator 5, comparator 6, reference voltage circuit 7, divider resistance R1, R2, feedback capacity C1; It is breaking circuit that said temperature protection circuit 4 is used for surpassing design temperature in temperature; The output of said oscillator 5, temperature protection circuit 4, comparator 6 connects the input of said logic control circuit 3 respectively; The output of said logic control circuit 3 is connected with the input of said drive circuit 2; The output of said drive circuit 2 is connected with the drive end of said charge pump circuit 1; Said divider resistance R1, R2 series connection; The end of divider resistance R1 is connected with the output of said charge pump circuit 1, and the other end links to each other with the end of divider resistance R2, the other end ground connection of said divider resistance R2; Said feedback capacity C1 is parallelly connected with divider resistance R1; The tie point of said divider resistance R1, R2 is connected with the input of said comparator 6, and said comparator 6 another inputs are connected with said reference voltage circuit 7 outputs.
Said charge pump circuit is made up of 12 grades of charge pump unit, and previous stage is output as the input of back one-level, and input voltage is 5V; Said reference voltage circuit is output as 1.2V; The frequency of said oscillator is 2MHz, and duty ratio is about 50%.Said temperature protection circuit is 145 ℃ in the temperature protection temperature.
The utility model voltage reference is a with crack benchmark, and temperature coefficient is about 0, and under different supply voltages and temperature, output voltage is all constant to be 1.2V.When output voltage was higher than preset voltage, the pressure drop on the resistance R 2 was greater than voltage reference, and comparator is exported high level, and this signal makes the electric charge air pump inoperative through logic control circuit and drive circuit, and output voltage descends like this.When output voltage was lower than the predeterminated voltage value, the pressure drop on the resistance R 2 was lower than voltage reference, the comparator output low level, and charge pump work, output voltage raises.Feedback capacity C1 and resistance R 1 parallel connection; Because the voltage of electric capacity can not suddenly change; When output voltage increases suddenly or reduces; The electric capacity bottom crown also can be followed top crown to be increased or reduces, and the positive input terminal of comparator can in time react the variation of output voltage like this, to increase the response speed of system's loop.
The input voltage of a kind of high voltage electricity pump control circuit of the utility model is about 4V ~ 6V, boosts through 12 grades of charge pump unit series connection, and output voltage can appreciate more than the 30V, shown in accompanying drawing 2.The drive signal of charge pump needs two opposite polarity clock signal A and B, when signal A is a high level, and when the B signal is low level, the charging of odd level charge pump dual numbers level charge pump; When number A is a low level, when the B signal was high level, the even level charge pump charged to the odd level charge pump.
In order to prevent that temperature is too high chip is burnt out in the utility model, it is breaking circuit that temperature protection circuit surpasses 145 degrees centigrade in temperature, and when temperature dropped to 132 degrees centigrade, the circuit charge pump restarted work.Temperature protection circuit is shown in accompanying drawing 3, and current source I1, I2 and I3 are the PTAT current source among the figure, and promptly current value is along with temperature rising electric current increases.When temperature was low, terminal voltage was lower than the voltage of triode Q1 emitter on the resistance R 1, and output voltage V o is a low level; When temperature raise, the electric current of PMOS pipe increased, and the pressure drop on the resistance R 4 increases, and the pressure drop of triode Vbe simultaneously reduces.The temperature of working as as shown in Figure 4 surpasses 145
oDuring C, terminal voltage surpasses the voltage of triode emitting stage on the resistance R 4, and output voltage V o is a high level.
The oscillator of the utility model is as shown in Figure 5.The value of current source I4 and I5 equates under the normal situation of opening.When output voltage V o1 is low level, metal-oxide-semiconductor M7 conducting, M8 ends, and current source I4 is to capacitor C 2 chargings, from V
LBe charged to V
HTime is:
When output voltage is high level, current source metal-oxide-semiconductor M8 conducting, M7 ends, and current source I5 is to capacitor discharge, from V
HBe put into V
LTime be:
Can know that the time of discharging and recharging equal, can make the duty ratio as shown in Figure 6 of clock signal be about 50% like this.
The signal of the comprehensive comparator of the logic control circuit of the utility model, temperature protection and oscillator, its inside is combinational logic circuit, the output signal can be controlled charge pump work and shutoff.But the output signal of logical circuit a little less than, be not enough to drive the electric capacity of charge pump, therefore must need drive circuit that the output signal of logic control circuit is strengthened, to guarantee enough driving forces.
The output voltage waveforms of a kind of high voltage electricity pump control circuit of the utility model is shown in accompanying drawing 7.
Claims (3)
1. a high voltage electricity pump control circuit is characterized in that: comprise charge pump circuit, drive circuit, logic control circuit, temperature protection circuit, oscillator, comparator, reference voltage circuit, divider resistance R1, R2, feedback capacity C1;
Said logic control circuit is used to control charge pump work and shutoff;
The output signal that said drive circuit is used to strengthen said logic control circuit drives the electric capacity of charge pump;
Said temperature protection circuit is used for breaking circuit when temperature surpasses design temperature;
The output of said oscillator, temperature protection circuit, comparator connects the input of said logic control circuit respectively; The output of said logic control circuit is connected with the input of said drive circuit; The output of said drive circuit is connected with the drive end of said charge pump circuit; Said divider resistance R1, R2 series connection; The end of divider resistance R1 is connected with the output of said charge pump circuit, and the other end links to each other with the end of divider resistance R2, the other end ground connection of said divider resistance R2; Said feedback capacity C1 is parallelly connected with divider resistance R1; The tie point of said divider resistance R1, R2 is connected with the input of said comparator, and another input of said comparator is connected with said reference voltage circuit output.
2. a kind of high voltage electricity pump control circuit according to claim 1 is characterized in that: said charge pump circuit is made up of 12 grades of charge pump unit, and previous stage is output as the input of back one-level, and input voltage is the low-voltage of 4V ~ 6V; Said reference voltage circuit is output as 1.2V; Can regulate the ratio of said divider resistance R1 and R2, thereby obtain different output voltage; The frequency of said oscillator is 2MHz, and duty ratio is about 50%.
3. a kind of high voltage electricity pump control circuit according to claim 1 is characterized in that: said temperature protection circuit is 145 ℃ in the temperature protection temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204266082U CN202309516U (en) | 2011-11-02 | 2011-11-02 | High voltage charge pump control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204266082U CN202309516U (en) | 2011-11-02 | 2011-11-02 | High voltage charge pump control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202309516U true CN202309516U (en) | 2012-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204266082U Expired - Lifetime CN202309516U (en) | 2011-11-02 | 2011-11-02 | High voltage charge pump control circuit |
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| Country | Link |
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| CN (1) | CN202309516U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510211A (en) * | 2011-11-02 | 2012-06-20 | 无锡芯朋微电子有限公司 | High-voltage charge pump control circuit |
-
2011
- 2011-11-02 CN CN2011204266082U patent/CN202309516U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510211A (en) * | 2011-11-02 | 2012-06-20 | 无锡芯朋微电子有限公司 | High-voltage charge pump control circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 214028 C,, Longshan Road, New District, Jiangsu, Wuxi, China 1301-1304 Patentee after: Wuxi Chipown Microelectronics Co., Ltd. Address before: 214028 Wuxi Province, New District, the Yangtze River Road, 21-1 source building (national integrated circuit design Park) room, Patentee before: Wuxi Xinpeng Micro-electronics Co., Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120704 |
|
| CX01 | Expiry of patent term |