CN202307854U - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- CN202307854U CN202307854U CN2011203389507U CN201120338950U CN202307854U CN 202307854 U CN202307854 U CN 202307854U CN 2011203389507 U CN2011203389507 U CN 2011203389507U CN 201120338950 U CN201120338950 U CN 201120338950U CN 202307854 U CN202307854 U CN 202307854U
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- porcelain plate
- bulges
- grooves
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to the technical field of semiconductors, and particularly relates to a semiconductor device. The semiconductor device comprises a porcelain plate and a crystalloid block, wherein the crystalloid block is arranged on the porcelain plate. The semiconductor device is characterized in that bulges and grooves are alternately arranged outside the porcelain plate and the cross sections of the bulges and the grooves are triangular or square, and therefore when the semiconductor device with the structure above works together with a heat-dissipating plate with a contact surface on which bulges and grooves are arranged alternately, the advantage of better heat-dissipating effect is achieved.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly a kind of semiconductor device.
Background technology
Semiconductor device has porcelain plate; The outside of porcelain plate is smooth in the prior art; Such semiconductor device device and contact-making surface are that smooth radiator contacts and has heat dispersion preferably, but its radiating effect also is not best, awaits further to improve.
Summary of the invention
The purpose of the utility model is exactly to above-mentioned shortcoming, and a kind of semiconductor device that can further improve radiating effect is provided.
The technical scheme of the utility model is achieved in that a kind of semiconductor device, comprises porcelain plate and crystal block, and crystal block is installed on the porcelain plate, it is characterized in that: described porcelain plate outside has protruding and groove structure at interval.
Say that further described convexity and groove cross section are triangle or square structure.
The beneficial effect of the utility model is: the semiconductor spare of this spline structure is being when having convexity and groove interval heating panel to be used in combination, to have the better advantage of radiating effect with contact-making surface.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Wherein: 1, porcelain plate 2, convexity 3, groove.
Embodiment
Below in conjunction with accompanying drawing the utility model is done further to describe.
As shown in Figure 1, a kind of semiconductor device comprises porcelain plate 1 and crystal block, and crystal block is installed on the porcelain plate 1, it is characterized in that: described porcelain plate 1 outside has convexity 2 and groove 3 structure at interval.
Further say, described protruding 2 with groove 3 cross sections be triangle or square structure.
Claims (2)
1. a semiconductor device comprises porcelain plate and crystal block, and crystal block is installed on the porcelain plate, it is characterized in that: described porcelain plate outside has protruding and groove structure at interval.
2. semiconductor device according to claim 1 is characterized in that: described convexity and groove cross section are triangle or square structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203389507U CN202307854U (en) | 2011-09-10 | 2011-09-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203389507U CN202307854U (en) | 2011-09-10 | 2011-09-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202307854U true CN202307854U (en) | 2012-07-04 |
Family
ID=46376695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203389507U Expired - Fee Related CN202307854U (en) | 2011-09-10 | 2011-09-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202307854U (en) |
-
2011
- 2011-09-10 CN CN2011203389507U patent/CN202307854U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20120910 |