CN202307790U

CN202307790U - Focus ring

Info

Publication number: CN202307790U
Application number: CN2011204258512U
Authority: CN
Inventors: 倪图强
Original assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Current assignee: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
Priority date: 2011-11-01
Filing date: 2011-11-01
Publication date: 2012-07-04
Anticipated expiration: 2021-11-01
Also published as: TWM448790U

Abstract

The utility model discloses a focus ring, which is arranged on the periphery of a substrate above a base in a plasma etching chamber. A supporting ring is arranged on the periphery of the base, and the focus ring is arranged above the supporting ring. The focus ring comprises a main ring and an extending ring. The main ring comprises an upper surface. The extending ring at least partially extends to the inside of the edge of the lower surface of the substrate, and the bottom of the extending ring is contacted with the supporting ring. The thickness of the main ring is smaller than the vertical height from the upper surface of the main ring to the supporting ring. Due to the fact that the thickness of the main ring is smaller than the total thickness of the focus ring, required silicon carbide (SiC) materials are greatly reduced, speed of manufacturing the focus ring is greatly improved, and not only production efficiency is improved, but also manufacture cost is greatly saved.

Description

A kind of focusing ring

Technical field

The utility model relates to a kind of plasma reaction cavity configuration that is used for wafer is carried out plasma treatment, the focusing ring in particularly a kind of reaction chamber.

Background technology

In the prior art, in plasma etch chamber, the focusing ring that is directly exposed in the plasma generally can be processed by preferred high-purity material, for example silicon or silicon carbide etc.With S _iC is an example; The vapour deposition of employing traditional chemical (Chemical vapor deposition, when CVD) technology was processed focusing ring, the whole thickness of the gathering ring that the SiC material is processed was all generated by the CVD deposition; To form last required shape near the part excision of process substrates through following process again.The time and materials of whole focusing ring processing is all relevant with the focusing ring integral thickness, S _iThe C poor growth, and cost of manufacture is higher.

The utility model content

In order to address the above problem, the utility model provides a kind of focusing ring, can reduce the deposit thickness of focusing ring, saves S _iThe consumption of C improves the efficient of making focusing ring; Practiced thrift the cost of manufacture of focusing ring greatly.

In order to realize above purpose, the utility model is realized through following technical scheme:

A kind of focusing ring; Be arranged in the outer circumferential side of substrate of the pedestal top of a plasma etching chamber, described pedestal outer circumferential side is provided with a support ring, and described focusing ring is positioned at the top of said support ring; Described focusing ring comprises: a main ring, and described main ring comprises a upper surface;

One extended loop, described extended loop extend in the edge of lower surface of substrate at least in part, and described extended loop bottom contacts with said support ring;

Said main ring thickness is less than the vertical height of said main ring upper surface to said support ring.

Described support ring top also is provided with a cover ring and is positioned at said focusing ring outer circumferential side, and said cover ring comprises a support portion, supports the side of said main ring away from said substrate.

Described extended loop end comprises that one inserts ring, and in the edge of the described insertion ring lower surface that is inserted into substrate at least partly, described insertion ring roughly is parallel to each other with main ring.

The thickness of described main ring is said main ring upper surface to 50% of the vertical height of said support ring.

The thickness of described main ring is said main ring upper surface to 30% of the vertical height of said support ring.

The thickness of described main ring is said main ring upper surface to 70% of the vertical height of said support ring.

The thickness of described main ring and said main ring upper surface can be 20%-90% to the ratio of the vertical height of said support ring.

Described extended loop upper surface is the obtuse angle with the angle that inserts the ring upper surface.

Described focusing ring is S-type.

The utility model compared with prior art has the following advantages: can reduce the deposit thickness of focusing ring, save S _iThe consumption of C improves the efficient of making focusing ring; Practiced thrift the cost of manufacture of focusing ring greatly.

Description of drawings

Fig. 1 is the operating state cutaway view of a kind of focusing ring of the utility model;

Fig. 2 is the operating state cutaway view of another embodiment of the utility model.

Embodiment

Below in conjunction with accompanying drawing,, the utility model is done further elaboration through specifying a preferable specific embodiment.

As shown in Figure 1, a kind of focusing ring is arranged in the outer circumferential side of substrate 2 of pedestal 3 tops of a plasma etching chamber; Pedestal 3 outer circumferential sides are provided with a support ring 5; Described focusing ring is positioned at the top of support ring 5, comprises a main ring 11 and extended loop 13, and main ring 11 comprises a upper surface 15; Extended loop 13 comprises that one inserts ring 12, inserts in the edge of lower surface that ring 12 extends to substrate 2 at least in part, and roughly is parallel to each other with main ring 11.Extended loop 13 bottoms contact with support ring 5.

Support ring 5 tops also are provided with a cover ring 4 and are positioned at said focusing ring outer circumferential side, and cover ring 4 comprises a support portion 6, support the side of main ring 11 away from substrate 2.The thickness of main ring 11 is less than main ring upper surface 15 vertical height to support ring 5, and in the present embodiment, the thickness of main ring 11 is main ring upper surface 15 to 50% of the vertical height of support ring 5, also can be 20% or 30%.

The upper surface of extended loop 13 is the obtuse angle with the angle of the upper surface that inserts ring 12 in the present embodiment, and this focusing ring is S-type, and the thickness of main ring 11 is less than the gross thickness of focusing ring.

As shown in Figure 2, a kind of focusing ring is arranged in the outer circumferential side of substrate 2 of pedestal 3 tops of a plasma etching chamber; Pedestal 3 outer circumferential sides are provided with a support ring 5; Described focusing ring is positioned at the top of support ring 5, comprises a main ring 11 and extended loop 13, and main ring 11 comprises a upper surface 15; Extended loop 13 extends in the edge of lower surface of substrate 2 at least in part, and extended loop 13 bottoms contact with support ring 5.

Support ring 5 tops also are provided with a cover ring 4; Be positioned at said focusing ring outer circumferential side; The lower surface of extended loop 13 is to being empty between the cover ring 4, and the thickness of main ring 11 is less than the vertical height of main ring upper surface 15 to support ring 5, in the present embodiment; The thickness of main ring 11 is main ring upper surface 15 to 70% of the vertical height of support ring 5, also can be 80% or 90%.

When adopt chemical vapour deposition (CVD) (Chemical vapor deposition, when CVD) technology is made focusing ring because the thickness of main ring 11 and extended loop is all less than the total height of focusing ring, thus in the primary depositing forming process required S _iThe C material significantly reduces, and the speed of processing focusing ring also just improves greatly, has not only improved production efficiency, and has practiced thrift cost of manufacture greatly.When forming the described focusing ring of the utility model, in deposit cavity, place with focusing ring of the present invention under the module that is complementary of square shape, deposition just can form required gathering ring parts through too small amount processing after arriving main ring thickness again.The utility model focusing ring still can reach the instructions for use of prior art focusing ring when saving a large amount of manufacturing times and material, when using, main ring 11 can prevent ion sputtering, does not influence the function of focusing ring.

Although the content of the utility model has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to the restriction to the utility model.After those skilled in the art have read foregoing, for the multiple modification of the utility model with to substitute all will be conspicuous.Therefore, the protection range of the utility model should be limited appended claim.

Claims

1. focusing ring; Be arranged in the outer circumferential side of substrate (2) of pedestal (3) top of a plasma etching chamber, described pedestal (3) outer circumferential side is provided with a support ring (5), and described focusing ring is positioned at the top of said support ring (5); It is characterized in that described focusing ring comprises:

One main ring (11), described main ring (11) comprises a upper surface;

One extended loop (13), described extended loop (13) extend in the edge of lower surface of substrate (2) at least in part, and described extended loop bottom contacts with said support ring;

Said main ring (11) thickness is less than the vertical height of said main ring upper surface to said support ring (5).

2. focusing ring according to claim 1; It is characterized in that: described support ring (5) top also is provided with a cover ring (4) and is positioned at said focusing ring outer circumferential side; Said cover ring (4) comprises a support portion (6), supports the side of said main ring away from substrate (2).

3. focusing ring according to claim 1 and 2; It is characterized in that: described extended loop (13) end comprises that one inserts ring (12); In the edge of described insertion ring (12) lower surface that is inserted into substrate (2) at least partly, described insertion ring (12) roughly is parallel to each other with main ring (11).

4. focusing ring according to claim 3 is characterized in that, the angle of described insertion ring (12) upper surface and extended loop (13) upper surface is the obtuse angle.

5. focusing ring according to claim 4 is characterized in that described focusing ring is S-type.

6. focusing ring according to claim 3 is characterized in that: the thickness of described main ring (11) is said main ring upper surface to 50% of the vertical height of said support ring.

7. focusing ring according to claim 3 is characterized in that: the thickness of described main ring (11) is said main ring upper surface to 30% of the vertical height of said support ring.

8. focusing ring according to claim 1 and 2 is characterized in that: the thickness of described main ring (11) is said main ring upper surface to 70% of the vertical height of said support ring.

9. focusing ring according to claim 1 is characterized in that: the thickness of described main ring (11) and said main ring upper surface can be 20%-90% to the ratio of the vertical height of said support ring.