CN202265624U - Furnace chamber auxiliary device capable of controlling deposition of caltepec fault zone (CFZ) silicon single crystal volatile matter - Google Patents
Furnace chamber auxiliary device capable of controlling deposition of caltepec fault zone (CFZ) silicon single crystal volatile matter Download PDFInfo
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- CN202265624U CN202265624U CN 201120384613 CN201120384613U CN202265624U CN 202265624 U CN202265624 U CN 202265624U CN 201120384613 CN201120384613 CN 201120384613 CN 201120384613 U CN201120384613 U CN 201120384613U CN 202265624 U CN202265624 U CN 202265624U
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Abstract
The utility model relates to a furnace chamber auxiliary device capable of controlling the deposition of a caltepec fault zone (CFZ) silicon single crystal volatile matter, which consists of an upper isolating cover and a lower isolating cover, which are fixed on middle furnace wall in the furnace chamber of a zone melting silicon crystal growth furnace and form an in-furnace closed cavity in the chamber of the zone melting furnace; due to the closed cavity formed by the upper isolating cover and the lower isolating cover of the furnace chamber auxiliary device, the volume of a doping cavity in the original furnace chamber is reduced and the original airflow model is changed; and in a doping process, a mixed gas flows out of the closed cavity from the upper and lower covers and carries away the volatile matter, then the mixed gas is exhausted from an exhaust opening, and thus, the volatile matter is prevented from depositing on a heating coil. The device is simple in installation, demounting and cleaning, is easy to operate and low in cost, increases the forming rate of gas-doped CFZ single crystals to over 70 percent from 60 percent, reduces production cost and increases production benefit.
Description
Technical field
The utility model relates to the production technical field of CFZ silicon single-crystal, the sedimentary furnace chamber supplementary unit of particularly a kind of control CFZ silicon single-crystal volatile matter.
Background technology
As everyone knows, nearly all silicon single-crystal all is to adopt vertical pulling method or zone melting method production.Elevated oxygen level "-f " flag ≧ 10 in the silicon single-crystal that vertical pulling method is produced
18Atm/cm
3) alms giver's effect of formed oxygen, because its unstable and reversibility cause limitation and the difficulty of silicon single-crystal in the power device manufacturing processed.Though the silicon single-crystal of zone melting method production can reduce oxygen level, its expensive production cost has limited its widespread use in the production devices field.The patent No. is that the Chinese patent of CN1267751A discloses a kind of vertical pulling and zone melting process of producing silicon single-crystal, i.e. CFZ silicon single-crystal.But it can only adopt the method for neutron irradiation to mix, and production cost is high like this, and the production cycle is long, and receives the restriction of neutron irradiation shortage of resources.
At Granted publication number is CN1333114C; Name is called and combines CFZ silicon single-crystal production technique on the basis of " working method of vapor doping zone-melted silicon single crystal "; Through technician's test of many times, especially in the inflation of finding time, impurity gas concentration; The method of 6 inches gas phase doping growth N types, P type CFZ monocrystalline has successfully been found out at last in the research of key points such as crystal pulling technique parameter.But its crystal forming rate is lower, only can reach about 60%.Reason is in the zone melting method process of growth that the Sauerstoffatom that gets into melt is supplied with by two portions, and promptly the micro amount of oxygen molecule generates SiO film, (2Si+ O with the reaction of raw silicon polycrystalline in Sauerstoffatom in the raw material polycrystalline silicon rod and high temperature (800 ℃～1350 ℃) rare gas element
2=2SiO), the SiO that the pyritous silicon melt will get in the silicon almost volatilizees totally, has only few partial oxygen atom to get into the molten crystal in district at last.The SiO that evaporates understands some attached on the heater coil, and along with the growth of crystal pulling time, the volatile matter deposition can be more and more, and the volatile matter that adheres to can get into the melting zone with solid-state form at any time, causes the disconnected bud of monocrystalline, influences brilliant.Therefore, when using Qu Rongqi to mix method growth CFZ monocrystalline, must solve the deposition problems of volatile matter on coil.
Summary of the invention
The purpose of the utility model is exactly for overcoming the deficiency of prior art; The sedimentary problem of volatile matter on coil appears when growing the CFZ monocrystalline to the method for mixing with Qu Rongqi; Design a kind of zone-melted silicon single crystal stove furnace chamber supplementary unit, make and under this device, dwindle original doping cavity volume, improve original doping airflow model; Volatile matter deposition problems when solving growth CFZ monocrystalline, and then improve the monocrystalline crystal forming rate.
The utility model is to realize through such technical scheme: the sedimentary furnace chamber supplementary unit of a kind of control CFZ silicon single-crystal volatile matter is characterized in that device is made up of with following cage the last cage that is fixed on the furnace wall, zone-melted silicon single crystal body of heater furnace chamber middle part;
Said upward cage is made up of the top cover body of top disk and drum shape; Disc centre aperture, top is identical with the upper lid body diameter, and top disk and top cover body are combined into one;
Said cage down is made up of the bottom cover body of lower disk and drum shape; The lower disk central aperture is identical with the lower cover body diameter, and lower disk and bottom cover body are combined into one;
Last cage is fixed in the furnace chamber of zone-melted silicon single crystal stove with following cage mirror image symmetry;
The furnace chamber internal diameter of the external diameter of top disk and zone-melted silicon single crystal stove is identical, and the outer diameter side of top disk is along fixing through clubfoot and retaining screw and furnace chamber inwall;
The furnace chamber internal diameter of the external diameter of lower disk and zone-melted silicon single crystal stove is identical, and the outer diameter side of lower disk is along fixing through clubfoot and retaining screw and furnace chamber inwall;
Last cage is fixed in the furnace chamber of zone-melted silicon single crystal stove with following cage mirror image symmetry; Put towards the top upper lid body position of last cage; Put towards the below lower cover body position of following cage;
Form closed cavity in the stove in the zone melting furnace chamber.
The beneficial effect of the utility model is: the furnace chamber supplementary unit is installed, and dismounting and cleaning are simple, easily operation; Cost is lower, mixes the crystal forming rate of CFZ monocrystalline for gas and brings up to more than 70%, simultaneously by 60%; Because the impurity gas region mainly concentrates on the closed cavity the inside; Reduce the loss of mixed gas, reduced production cost, improved productivity effect.
Description of drawings
Fig. 1 is the structural representation of furnace chamber supplementary unit closed cavity;
Fig. 2 is top disk and cover body vertical view;
Fig. 3 is top disk and cover body front view;
Fig. 4 is lower disk and cover body vertical view;
Fig. 5 is lower disk and cover body front view.
Among the figure: 1, polycrystalline bar (silicon rod); 2, top cover body; 3, retaining screw; 4, furnace wall; 5, top disk; 6, clubfoot; 7, mixed gas inlet; 8, lower disk; 9, closed cavity; 10, heater coil; 11, bottom cover body; 12, CFZ silicon single-crystal.
Embodiment
Understand the utility model for clearer, describe the utility model in detail in conjunction with accompanying drawing and embodiment:
To shown in Figure 5, device is made up of with following cage the last cage that is fixed on the furnace wall, zone-melted silicon single crystal body of heater furnace chamber middle part like Fig. 1; Last cage is made up of the top cover body 2 of top disk 5 and drum shape; Disk 5 central apertures in top are identical with top cover body 2 external diameters, and top disk 5 is combined into one with top cover body 2;
Following cage is made up of the bottom cover body 11 of lower disk 8 and drum shape; Lower disk 8 central apertures are identical with bottom cover body 11 external diameters, and lower disk 8 is combined into one with bottom cover body 11;
Last cage is fixed in the furnace chamber of zone-melted silicon single crystal stove with following cage mirror image symmetry;
The furnace chamber internal diameter of the external diameter of top disk 5 and zone-melted silicon single crystal stove is identical, and the outer diameter side of top disk 5 is along fixing through clubfoot 6 and retaining screw 3 and furnace chamber inwall;
The furnace chamber internal diameter of the external diameter of lower disk 8 and zone-melted silicon single crystal stove is identical, and the outer diameter side of lower disk 8 is along fixing through clubfoot 6 and retaining screw 3 and furnace chamber inwall;
Last cage is fixed in the furnace chamber of zone-melted silicon single crystal stove with following cage mirror image symmetry; Put towards the top top cover body 2 positions of last cage; Closed cavity 9 in the stove that forms in the zone melting furnace chamber is put in bottom cover body 11 positions of following cage towards the below.
Above-mentioned all devices all are to adopt stainless material to process, and also can adopt other materials to process.
In the crystal-pulling process; The mixed gas of being made up of impurity gas and rare gas element is parallel to lower disc by the gas inlet 7 of closed cavity 9 and gets into, and mixes through the high temperature melting zone, takes away volatile matter simultaneously; Flow out closed cavity 9 by last lower cover, discharge by the air outlet again.Thereby make volatile matter can not be deposited on the heater coil 10, prevent that effectively it from falling into the melting zone, cause the disconnected bud of monocrystalline.
Disk is connected with middle furnace chamber wall, and mode of connection can have a variety of, as long as can disk be fixed in the furnace chamber, and the direction that the opening of cover body faces silicon single crystal gets final product.
The utility model device adopts the stainless steel clubfoot, and a pin is fixed in body of heater with screw, and another one is used for accepting disk.Below device similar fixing, only cover body is positioned at below the disk fixing.So just can form the closed cavity of a zone melting furnace lumen.
In the monocrystalline silicon growing process; The CFZ polycrystalline rod is that cover body is grown downwards along cover body in zone melting furnace; The mixed gas that rare gas element and impurity gas are formed is the middle furnace chamber entering body of heater through sealing; Basically be distributed in the whole closed cavities, two cylindrical cover bodies flow out to lower furnace chamber about the warp then, finally flow out through venting port.
Because the existence of closed cavity, mixed gas carries out gas phase doping along getting into closed cavity in the parallel direction of disk through the melting zone, simultaneously the SiO volatile matter is taken away.Because air-flow is to be parallel to disk, be vertical promptly with crystal growth direction, be parallel to coil, thus mixed gas only can be in the high-temperature zone with the volatile matter coil that blows off, the cleanliness factor of retaining coil prevents the volatile matter deposition, comes off to get into the melting zone and cause the disconnected bud of monocrystalline.Mixed gas gets into two cavitys up and down through meeting after the melting zone along the space of cover body between crystal, and then is flowed out by venting port.
Adopt after the said apparatus, draw CFZ silicon single-crystal crystal forming rate and bring up to about 70%, improve about 10 points by 60%.
According to above-mentioned explanation, can realize the scheme of the utility model in conjunction with art technology.
Claims (1)
1. the sedimentary furnace chamber supplementary unit of control CFZ silicon single-crystal volatile matter is characterized in that, device is made up of with following cage the last cage that is fixed on the furnace wall, zone-melted silicon single crystal body of heater furnace chamber middle part; Said top cover body (2) formation that goes up cage by top disk (5) and drum shape; Top disk (5) central aperture is identical with top cover body (2) external diameter, and top disk (5) and top cover body (2) are combined into one; Said cage down is made up of the bottom cover body (11) of lower disk (8) and drum shape; Lower disk (8) central aperture is identical with bottom cover body (11) external diameter, and lower disk (8) and bottom cover body (11) are combined into one; Last cage is fixed in the furnace chamber of zone-melted silicon single crystal stove with following cage mirror image symmetry; The external diameter of top disk (5) is identical with the furnace chamber internal diameter of zone-melted silicon single crystal stove, and the outer diameter side of top disk (5) is along fixing with the furnace chamber inwall through clubfoot (6) and retaining screw (3); The external diameter of lower disk (8) is identical with the furnace chamber internal diameter of zone-melted silicon single crystal stove, and the outer diameter side of lower disk (8) is along fixing with the furnace chamber inwall through clubfoot (6) and retaining screw (3); Last cage is fixed in the furnace chamber of zone-melted silicon single crystal stove with following cage mirror image symmetry; Put towards the top top cover body (2) position of last cage; Closed cavity (9) in the stove that forms in the zone melting furnace chamber is put in bottom cover body (11) position of following cage towards the below.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120384613 CN202265624U (en) | 2011-10-11 | 2011-10-11 | Furnace chamber auxiliary device capable of controlling deposition of caltepec fault zone (CFZ) silicon single crystal volatile matter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120384613 CN202265624U (en) | 2011-10-11 | 2011-10-11 | Furnace chamber auxiliary device capable of controlling deposition of caltepec fault zone (CFZ) silicon single crystal volatile matter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202265624U true CN202265624U (en) | 2012-06-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120384613 Expired - Fee Related CN202265624U (en) | 2011-10-11 | 2011-10-11 | Furnace chamber auxiliary device capable of controlling deposition of caltepec fault zone (CFZ) silicon single crystal volatile matter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202265624U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321910A (en) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | Furnace chamber auxiliary device and method for controlling deposition of controlled freeze zone (CFZ) silicon monocrystal volatile matter |
-
2011
- 2011-10-11 CN CN 201120384613 patent/CN202265624U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321910A (en) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | Furnace chamber auxiliary device and method for controlling deposition of controlled freeze zone (CFZ) silicon monocrystal volatile matter |
| CN102321910B (en) * | 2011-10-11 | 2014-04-09 | 天津市环欧半导体材料技术有限公司 | Furnace chamber auxiliary device and method for controlling deposition of controlled freeze zone (CFZ) silicon monocrystal volatile matter |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120606 Termination date: 20141011 |
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| EXPY | Termination of patent right or utility model |