CN202263580U - Resistor heating body - Google Patents
Resistor heating body Download PDFInfo
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- CN202263580U CN202263580U CN 201120367432 CN201120367432U CN202263580U CN 202263580 U CN202263580 U CN 202263580U CN 201120367432 CN201120367432 CN 201120367432 CN 201120367432 U CN201120367432 U CN 201120367432U CN 202263580 U CN202263580 U CN 202263580U
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- heating body
- middle portion
- resistivity
- upper portion
- lower portion
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Abstract
The utility model relates to a resistor heating body, which comprises a barrel body, wherein the barrel body is divided into an upper portion, a middle portion and a lower portion along the axial direction. The resistivity of the middle portion is no larger than that of the upper portion and the lower portion, the height of the middle portion is smaller than that of the upper portion and the lower portion, and the width of the middle portion is larger than that of the upper portion and the lower portion. The structure of the resistor heating body ensures that the resistance of the middle portion is larger than that of the upper portion and the lower portion, and with the same current, the middle portion generates relative less heat so that even distribution of the temperature in a high-temperature high-pressure synthesized cavity is changed, the resistor heating body adapts to the pressure gradient in a reaction chamber, an area suitable for growth of cubic boron nitride and man-made diamond is widened, the cubic boron nitride and man-made diamond products with high quality can be synthesized easily, and product rate and quality of products can be further improved.
Description
Technical field
The utility model belongs to the synthetic technical field of processing equipment of superhard material HTHP, relates to a kind of synthetic equally distributed resistance heating body of chamber internal temperature of HTHP that is used to adjust.
Background technology
At present; Synthesizing cubic boron nitride and diamond are accomplished under high-temperature and high-pressure conditions; Outside hyperpressure makes generation superelevation pressure in the reative cell through the sealing and the transmission of transmission medium; The resistance heating body of reaction chamber wall produces high temperature through the electric current heating that the outside provides, and makes reative cell produce HTHP to satisfy the condition of growth cubic boron nitride and diamond.Realize in reative cell, having pressure gradient and thermograde to exist inevitably through conduction and transmission owing to be fit to the temperature and pressure of growth conditions.The characteristic of pressure and temperature conduction causes in the existing reative cell pressure unreasonable with Temperature Distribution, with regard to synthesizing cubic boron nitride and diamond, has the calandria that uses now and is monolithic construction; Each position resistivity is identical; The caloric value of getting along is identical, causes temperature eminence pressure low, and temperature lower pressure is high; Be unfavorable for the growth of material, the situation of this Temperature Distribution incompatibility pressure distributions is along with the expansion of high-temperature high-voltage reaction chamber size becomes more and more obvious.
The utility model content
The purpose of the utility model provides a kind of resistance heating body, and is identical to solve each position resistivity of existing monolithic construction resistance heating body, and the caloric value of getting along is identical and be unfavorable for the problem of the growth of material.
For realizing above-mentioned purpose; A kind of resistance heating body of the utility model comprises cylindrical shell, and said cylindrical shell is divided into upper, middle, and lower part vertically; The resistivity at said middle part is not more than the resistivity of top, bottom, and the middle part is lower and width is big than the height of top, bottom respectively.
The height of said upper and lower, width are all identical.
The height of said upper and lower is identical, width is different.
The height of said upper and lower is different, width is identical.
The resistivity of said upper and lower is identical.
The resistivity of said upper and lower is different.
The resistance heating body of the utility model is divided into upper, middle, and lower part, and the resistivity at middle part is not more than the resistivity of top, bottom, and the middle part is lower and width is big than the height of top, bottom respectively; This structure has guaranteed that the resistance of mid portion is less than upper and lower two parts; Under the situation of same electric current, produce less heat, so just changed uniform distribution of temperature in the high-temperature high-pressure synthetic cavity; Adapted to the pressure gradient in the reative cell; The inner zone that is fit to the growth of cubic boron nitride and diamond of reative cell is broadened, synthesize the cubic boron nitride and the diamond product of high-quality more easily, and then improve the ratio defective product and the quality of product.
Description of drawings
Fig. 1 is the structural representation of resistance heating body embodiment;
Fig. 2 is another structural scheme of mechanism of resistance heating body embodiment.
The specific embodiment
The structure of resistance heating body is as shown in Figure 1; This resistance heating body comprises cylindrical shell; This cylindrical shell is divided into top 1,3 three parts in middle part 2 and bottom vertically; Wherein middle part 2 resistivity is not more than the resistivity of top 1, bottom 2, and the structure at middle part 2 is low and width is big with the height of top 1, bottom 3 respectively.This structure is in order to guarantee that middle part 2 resistance is less than top 1 and bottom 3; To change uniform distribution of temperature in the high-temperature high-pressure synthetic cavity; Adapted to the pressure gradient in the reative cell; The inner zone that is fit to the growth of cubic boron nitride and diamond of reative cell is broadened, synthesize the cubic boron nitride and the diamond product of high-quality more easily, and then improve the ratio defective product and the quality of product.
Certainly the part cross section that goes out greatly than upper and lower part width in the middle part of can be rectangle, arc or other shape.As shown in Figure 2, middle part 12 is the small semicircle structure that minor arc constitutes than the cross section that top 11 and bottom 13 have more part among the figure.The height of the upper and lower of this resistance heating body, width and resistivity can be identical; Also can be different; As long as the resistivity that satisfies the middle part is not more than the resistivity of top, bottom; The structure at middle part is low and width is big with the height of top, bottom respectively, can realize improving the equally distributed effect of high-temperature high-pressure synthetic cavity internal temperature.
Claims (6)
1. a resistance heating body comprises cylindrical shell, it is characterized in that: said cylindrical shell is divided into upper, middle, and lower part vertically, and the resistivity at said middle part is not more than the resistivity of top, bottom, and the middle part is lower and width is big than the height of top, bottom respectively.
2. a kind of resistance heating body according to claim 1 is characterized in that: the height of said upper and lower, width are all identical.
3. a kind of resistance heating body according to claim 1 is characterized in that: the height of said upper and lower is identical, width is different.
4. a kind of resistance heating body according to claim 1 is characterized in that: the height of said upper and lower is different, width is identical.
5. according to each described a kind of resistance heating body among the claim 1-4, it is characterized in that: the resistivity of said upper and lower is identical.
6. according to each described a kind of resistance heating body among the claim 1-4, it is characterized in that: the resistivity of said upper and lower is different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120367432 CN202263580U (en) | 2011-09-29 | 2011-09-29 | Resistor heating body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120367432 CN202263580U (en) | 2011-09-29 | 2011-09-29 | Resistor heating body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202263580U true CN202263580U (en) | 2012-06-06 |
Family
ID=46154391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120367432 Expired - Lifetime CN202263580U (en) | 2011-09-29 | 2011-09-29 | Resistor heating body |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202263580U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109123805A (en) * | 2018-09-21 | 2019-01-04 | 深圳麦克韦尔股份有限公司 | Toast smoking set and its Metal Substrate electric heating part |
-
2011
- 2011-09-29 CN CN 201120367432 patent/CN202263580U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109123805A (en) * | 2018-09-21 | 2019-01-04 | 深圳麦克韦尔股份有限公司 | Toast smoking set and its Metal Substrate electric heating part |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: FUNIK ULTRAHARD MATERIALS CO., LTD. Free format text: FORMER NAME: HE'NAN FUNIK ULTRAHARD MATERIAL CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 450001 Zhengzhou high tech Industrial Development Zone, Henan, Holly Street, No. 16 Patentee after: Rich Nike superhard material limited company Address before: 450001 Zhengzhou high tech Industrial Development Zone, Henan, Holly Street, No. 16 Patentee before: Henan Funik Ultrahard Material Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20120606 |
|
| CX01 | Expiry of patent term |