CN202259284U - 新型高压二极管 - Google Patents
新型高压二极管 Download PDFInfo
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- CN202259284U CN202259284U CN201120319152XU CN201120319152U CN202259284U CN 202259284 U CN202259284 U CN 202259284U CN 201120319152X U CN201120319152X U CN 201120319152XU CN 201120319152 U CN201120319152 U CN 201120319152U CN 202259284 U CN202259284 U CN 202259284U
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- chip
- voltage
- novel high
- utility
- diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
Abstract
本实用新型公开了一种新型高压二极管，包括管体、芯片，芯片为8层低电阻率芯片形式。本实用新型结构合理，产品具有高度的抗反向浪涌能力，极低的正向通态电压降，特别适宜在微波炉等高压大电流工作环境的高压二极管器件的生产。
Description
技术领域
本实用新型涉及一种二极管。
背景技术
现有的高压二极管，其芯片采用12层较高电阻率的芯片组成，体积大，正向通态电压降高。特别我国微波炉生产行业通常的是12KV/0.5A的高压二极管，该器件的实际反向电压在20-22KV之问，正向电压降在10-12V之间，因而器件的正向功耗功率在5-6W。
实用新型内容
本实用新型的目的在于提供一种结构合理，正向通态电压降低的新型高压二极管。
本实用新型的技术解决方案是：
一种新型高压二极管，包括管体、芯片，其特征是：芯片为8层低电阻率芯片形式。
管体的剖面长度为9.5mm，高度为5mm。
本实用新型结构合理，产品具有高度的的抗反向浪涌能力，极低的正向通态电压降，特别适宜在微波炉等高压大电流工作环境的高压二极管器件的生产。采用本实用新型高压二极管同样使用在微波炉生产行业，只采用6KV/0.5A设计，其中器件的正向通态电压只有5-6V；器件的正向功耗功率不到3W，大幅度降低器件的工作结温，提高了器件的工作可靠性。同时采用低压设计也大幅度节约了芯片数量，降低了生产成本。
附图说明
下面结合附图和实施例对本实用新型作进一步说明。
图1是本实用新型一个实施例的结构示图。
具体实施方式
一种新型高压二极管，包括管体1、芯片2，芯片为8层低电阻率芯片形式。管体的剖面长度为9.5mm，高度为5mm。
Claims (2)
1.一种新型高压二极管，包括管体、芯片，其特征是：芯片为8层低电阻率芯片形式。
2.根据权利要求1所述的新型高压二极管，其特征是：管体的剖面长度为9.5mm，高度为5mm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120319152XU CN202259284U (zh) | 2011-08-29 | 2011-08-29 | 新型高压二极管 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120319152XU CN202259284U (zh) | 2011-08-29 | 2011-08-29 | 新型高压二极管 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202259284U true CN202259284U (zh) | 2012-05-30 |
Family
ID=46120482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120319152XU Expired - Fee Related CN202259284U (zh) | 2011-08-29 | 2011-08-29 | 新型高压二极管 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202259284U (zh) |
-
2011
- 2011-08-29 CN CN201120319152XU patent/CN202259284U/zh not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shenzhen Longjing Micro Electronics Co., Ltd. Assignor: Li Haitao Contract record no.: 2012440020381 Denomination of utility model: Novel high voltage diode Granted publication date: 20120530 License type: Exclusive License Record date: 20121217 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20150829 |
|
| EXPY | Termination of patent right or utility model |