CN202189794U - Voltage stabilizing diode - Google Patents
Voltage stabilizing diode Download PDFInfo
- Publication number
- CN202189794U CN202189794U CN2011202782043U CN201120278204U CN202189794U CN 202189794 U CN202189794 U CN 202189794U CN 2011202782043 U CN2011202782043 U CN 2011202782043U CN 201120278204 U CN201120278204 U CN 201120278204U CN 202189794 U CN202189794 U CN 202189794U
- Authority
- CN
- China
- Prior art keywords
- metal layer
- voltage stabilizing
- layer
- junction
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a voltage stabilizing diode, which belongs to the field of a semiconductor device technology. The voltage stabilizing diode includes a pipe core; the pipe core includes a PN junction with two surfaces provided with electrodes; the surface bare portion of the PN junction is respectively provided with an Si3N4 layer and an SiO2 layer along the electrodes direction; and the electrodes, the Si3N4 layer and the SiO2 layer all possesses step structures. In the utility model, with the structure, compared to the prior technology, the voltage stabilizing diode is advantageous by possessing a low voltage, low electric leakage, high adhesiveness between the metal layer and the SiO2 and high anti-electrostatic-discharge performance.
Description
Technical field
The utility model relates to technical field of semiconductor device, particularly relates to a kind of diode.
Background technology
Existing voltage stabilizing didoe, major failure show that open circuit, short circuit and voltage stabilizing value are unstable, and the anti-electrostatic-discharge performance is low in actual use, metal and SiO
2Adhesiveness is not so good, cause product in the back road encapsulation process pulling force poor, in the production and transport process, produce early failure easily because anti-static is not enough, make its application scenario receive very big restriction.
The utility model content
The purpose of the utility model is the deficiency that overcomes prior art, and a kind of low-voltage, low electric leakage, metal level and SiO are provided
2Between have than high-adhesiveness, voltage stabilizing didoe with high anti-electrostatic-discharge performance.
The utility model comprises tube core, and said tube core comprises a two-sided PN junction that is provided with electrode, is respectively arranged with one deck Si from PN junction to electrode direction between PN junction surface exposure part and the electrode
3N
4Layer and one deck SiO
2Layer, said electrode, Si
3N
4Layer and SiO
2Layer is step structure.
Said PN junction double-face electrode is titanium, nickel, silver-colored three-decker; The front of PN junction is disposed with bottom metal layer, barrier metal layer and adhesiving metal layer from bottom to top.
The thickness of said bottom metal layer is preferably 500～700; The thickness of said barrier metal layer is preferably 6900～7200; The thickness of said adhesiving metal layer is preferably 6900～7200.
The utility model compared with prior art has low-voltage, low electric leakage, metal level and SiO owing to adopt above structure
2Between the advantage than high-adhesiveness, high anti-electrostatic-discharge performance is arranged.
Description of drawings
Accompanying drawing is the structural representation of the utility model voltage stabilizing didoe.
Embodiment
Below in conjunction with accompanying drawing the utility model is elaborated:
Among the figure: 1, tube core, 2, PN junction, 3, electrode, 4, Si
3N
4Layer, 5, SiO
2Layer, 6, bottom metal layer, 7, barrier metal layer, 8, the adhesiving metal layer.
Shown in accompanying drawing, comprise tube core, tube core comprises a two-sided PN junction that is provided with electrode, is respectively arranged with one deck Si from PN junction to electrode direction between PN junction surface exposure part and the electrode
3N
4Layer and one deck SiO
2Layer, electrode, Si
3N
4Layer and SiO
2Layer is step structure.The PN junction double-face electrode is titanium, nickel, silver-colored three-decker;
The front of PN junction is disposed with bottom metal layer, barrier metal layer and adhesiving metal layer from bottom to top.
The thickness of bottom metal layer is 600; The thickness of barrier metal layer is 7000;
The thickness of adhesiving metal layer is 7000; Bottom metal layer is a titanium, and barrier metal layer is a titanium-tungsten, and the adhesiving metal layer is a titanium.
Above-described embodiment is more preferably one of embodiment of the utility model, and common variation that those skilled in the art carries out in the utility model technical scheme scope and replacement all should be included within the protection range of the utility model.
Claims (7)
1. a voltage stabilizing didoe comprises tube core, it is characterized in that: said tube core comprises a two-sided PN junction that is provided with electrode, is respectively arranged with one deck Si from PN junction to electrode direction between PN junction surface exposure part and the electrode
3N
4Layer and one deck SiO
2Layer, said electrode, Si
3N
4Layer and SiO
2Layer is step structure.
2. voltage stabilizing didoe according to claim 1 is characterized in that: said PN junction double-face electrode is titanium, nickel, silver-colored three-decker.
3. voltage stabilizing didoe according to claim 1 is characterized in that: the front of PN junction is disposed with bottom metal layer, barrier metal layer and adhesiving metal layer from bottom to top.
4. voltage stabilizing didoe according to claim 3 is characterized in that: the thickness of said bottom metal layer is 500～700.
5. voltage stabilizing didoe according to claim 3 is characterized in that: the thickness of said barrier metal layer is 6900～7200.
6. voltage stabilizing didoe according to claim 3 is characterized in that: the thickness of said adhesiving metal layer is 6900～7200.
7. voltage stabilizing didoe according to claim 3 is characterized in that: said bottom metal layer is a titanium, and barrier metal layer is a titanium-tungsten, and the adhesiving metal layer is a titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202782043U CN202189794U (en) | 2011-08-02 | 2011-08-02 | Voltage stabilizing diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202782043U CN202189794U (en) | 2011-08-02 | 2011-08-02 | Voltage stabilizing diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202189794U true CN202189794U (en) | 2012-04-11 |
Family
ID=45921229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202782043U Expired - Fee Related CN202189794U (en) | 2011-08-02 | 2011-08-02 | Voltage stabilizing diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202189794U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534564A (en) * | 2019-08-30 | 2019-12-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of diode chip for backlight unit multiple-layer metallization layer and preparation method thereof |
| CN112366231A (en) * | 2020-11-20 | 2021-02-12 | 济南新芯微电子有限公司 | Voltage stabilizing diode and manufacturing method thereof |
-
2011
- 2011-08-02 CN CN2011202782043U patent/CN202189794U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534564A (en) * | 2019-08-30 | 2019-12-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of diode chip for backlight unit multiple-layer metallization layer and preparation method thereof |
| CN110534564B (en) * | 2019-08-30 | 2023-08-04 | 中国振华集团永光电子有限公司（国营第八七三厂） | Manufacturing method of multi-layer metallization layer of diode chip |
| CN112366231A (en) * | 2020-11-20 | 2021-02-12 | 济南新芯微电子有限公司 | Voltage stabilizing diode and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120411 Termination date: 20130802 |