CN202164379U - Coated SiC composite crucible - Google Patents
Coated SiC composite crucible Download PDFInfo
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- CN202164379U CN202164379U CN2011202248982U CN201120224898U CN202164379U CN 202164379 U CN202164379 U CN 202164379U CN 2011202248982 U CN2011202248982 U CN 2011202248982U CN 201120224898 U CN201120224898 U CN 201120224898U CN 202164379 U CN202164379 U CN 202164379U
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- composite crucible
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Abstract
The utility model discloses a coated SiC composite crucible which is composed of a SiC composite crucible billet and a high temperature resistant isolation coating, wherein the mixture of resins and SiC particles are pressed and solidified into a crucible blank in a hot press; and the crucible blank is transformed into the SiC composite crucible billet by a high-temperature anaerobic carbonization method; and then the SiC composite crucible billet is provided with the high-temperature isolation layer so as to form the coated SiC composite crucible of the utility model. The crucible is long in service life and low in pollution on fused silica in the crucible; and crucible is suitable for mass production, and is energy-saving and environment-friendly.
Description
Technical field
The utility model discloses a kind of pulling monocrystal silicon that is used for, to silicon single crystal pollute less, long service life, the new crucible that can be mass-produced.
Background technology
During pulling monocrystal silicon, need to make the container of splendid attire silicon melt of crucible.It is shorter work-ing life to make container with quartz glass crucibles, and because of between molten silicon and the quartz chemical reaction being arranged, this crucible also also has pollution to silicon single crystal.With electric arc manufactured quartz crucible the time, need with the purity height silica powder of expensive; In the process of producing, energy consumption is bigger, and noise is higher.Over 30 years, many people are striving to find new crucible, and scheme is a lot, but because of there being variety of issue, all fail last successful.Now during pulling monocrystal silicon, still all adopt the quartz crucible of arc process manufacturing to make the container of splendid attire silicon melt.
Summary of the invention
The purpose of the utility model is to find a kind of pulling monocrystal silicon that is used for, the new crucible of mass producible.This crucible is few to the detrimentally affect of pulled crystal silicon, long service life, and material loss is few in the process of production crucible, energy consumption is low, noise is little.
The crucible of the utility model is made up of SiC composite crucible base and coating on inner surface; Its preparation method adopts raw material and the moulding process be similar to the existing SiC of manufacturing resin wheel sheet when selection and moulding: in the die cavity of thermocompressor, with thermosetting resin and the compression moulding of SiC particulate mixture, being heating and curing is porous crucible blank; Afterwards, under anoxybiotic condition with the mode of high temperature carbonization with resin charing or charcoal/silication in the mixture of blank, change into the composite crucible base of C/SiC or SiC/SiC; At last, at the internal surface of crucible base, set up resistant to elevated temperatures barrier coat.
Can suppress respectively at the bottom of the base wall of crucible base and the base; Be integral with resin bond more afterwards.
The base wall of crucible base contains 1% to 45% the gradient, and optimum gradient is 5% to 10%.
Thermosetting resin is resol or furane resin, the interior Si micro mist that contains.
Resistant to elevated temperatures barrier coat, or for the chemical vapor deposition of silicon carbide coating or be coated in internal surface, generate one deck glass carbon coating or direct heat spraying quartz glass layer after the charing with thermosetting resin.
The CVD-SiC coating of crucible; Material source when adopting trichloromethyl silane to do chemical vapor deposition (CVD); The inverted crucible base is heated to about 1150 ℃; In crucible base chamber, send into the gas mixture of hydrogen, argon gas and trichloromethyl silane again. this mixes Shanghai gas and on pyritous crucible inwall, decomposes, and the SiC of generation is deposited on the wall, promptly is required CVD-SiC coating
The glass carbon coating of crucible adopts the internal surface of resin coated at crucible, under the condition of oxygen barrier, heats, and finally generates the glass carbon coating that one deck is similar to glass structure.
This crucible is the confession monocrystalline silicon growing usefulness of the utility model, contains the SiC composite crucible of coating.
The crucible of the utility model has following advantage:
1, the utility model is with the raw material and the hot press forming technology that are similar to SiC resin wheel sheet; Produce porous SiC composite crucible base; Technology is simple, ripe, and the gas that its porous state is produced when being convenient to discharge resin solidification and charing can greatly improve work efficiency; Reduce cost, but mass production goes out than the better SiC crucible of silica glass performance in view of the above.
2, the softening temperature of silica glass is far below the fusing point of silicon, and quartz crucible is prone to softening transform in use; And the SiC strength of materials is high, and does not have fusing point, and the intensity of material also will improve under the high temperature, can not be out of shape in use, and work-ing life is very long.Therefore cancellation has the outer plumbago crucible protective sleeve of quartz glass crucibles in the single crystal growing furnace now.
3, silica glass will react with fused silicon, pollutes silicon single crystal; The chemical property of SiC is extremely stable; The fusing point of silicon is 1412 ℃, far below 2200 ℃ of the initial decomposition temperatures of SiC, so SiC also is very stable to molten silicon.This crucible material is little to the pollution of silicon single crystal.
When 4, inner surface of crucible is handled with the CVD-SiC making coatings, because of the based on very high purity (can arrive six 9) of coating, impurity few (can less than 1PPM), the impurity in the inner surface of crucible material pollutes institute's storage will be still less.
5, crucible basic unit is changed into behind the C/SiC by silica glass, and the thermal conductivity of its material will improve several times to ten several times, the heat transfer and even heat when helping using, also helps material and in smelting furnace, increases heat transfer rate, improves the fusion amount of unit time.
6, when producing the crucible base, low to the purity requirement of bearing layer raw material; The utilization ratio of former section is high; Noise is little; Dust is few; Energy consumption is much lower.
7, the CVD-SiC coating of this crucible, its raw material is a trichloromethyl silane.Waste when it is semi-conductor industry production polysilicon, extremely difficulty is put.The series of strata that are coated with of utilizing this thing to make this crucible serve multiple.
When 8, adopting thermosetting resin, possibly generate closely knit glass charcoal automatically after the resin charing.
9, the raw material of this Diao Faming employing and technology are existing sophisticated raw material and technology.
The described SiC crucible that contains coating of the utility model, quality is good, and the life-span is long; It is energy-conservation that its technology can be produced this novel described SiC crucible, production process that contains coating in batches, environmental protection.
This crucible can substitute existing quartz crucible fully.
The invention accompanying drawing
Fig. 1 is the crucible diagrammatic cross-section.
The invention practical implementation
Below be a specific embodiment of the utility model:
The crucible diagrammatic cross-section is seen Fig. 1.
Among the figure: 1, sidewall of crucible; 2, at the bottom of the crucible; 3, CVD-SiC coating.
Adopt raw material and the moulding process be similar to existing SiC resin wheel sheet when present embodiment selection and moulding: in the die cavity of thermocompressor, with thermosetting resin and the compression moulding of SiC particulate mixture, being heating and curing is the crucible blank; Afterwards, under the condition of anaerobic with the mode of high temperature carbonization with resin charing or charcoal/silication in the mixture of blank, be converted into C/SiC or SiC/SiC crucible base; At the internal surface of crucible base, set up resistant to elevated temperatures barrier coat at last.
In the present embodiment, suppress respectively at the bottom of the base wall of crucible base and the base; Before charing, be integral again afterwards with resin bond.
In the present embodiment, the gradient of the base wall of crucible base is 5%.
In the present embodiment, resin is a heat-reactive phenolic resin.
In the present embodiment, can set up the Wrapping formed charcoal fiber/resin reinforced composite of one deck at the outside surface of crucible.
In the present embodiment; The CVD-SiC coating of crucible; Material source when adopting trichloromethyl silane to do chemical vapor deposition (CVD) is heated to the inverted crucible base about 1150 ℃, in crucible base chamber, sends into the gas mixture of hydrogen, argon gas and trichloromethyl silane again. and this gas mixture decomposes on pyritous crucible inwall; The SiC that produces is deposited on the wall, promptly is required CVD-SiC coating
In the present embodiment, the glass carbon coating of crucible adopts the internal surface of resin coated at crucible, under the condition of oxygen barrier, heats, and finally generates the glass charcoal that one deck is similar to glass structure.
This crucible is the monocrystalline silicon growing usefulness of the utility model, contains the SiC composite crucible of coating.
Claims (6)
1. contain the SiC composite crucible of coating, it is characterized in that: this crucible is made up of SiC composite crucible base and coating on inner surface.
2. according to the said SiC composite crucible that contains coating of claim 1, it is characterized in that: can suppress respectively at the bottom of the base wall of crucible blank and the base; Afterwards, be integral with resin bond.
3. according to the said SiC composite crucible that contains coating of claim 1, it is characterized in that: the wall of crucible contains 1% to 45% the gradient, and optimum gradient is 5% to 10%.
4. according to the said SiC composite crucible that contains coating of claim 1, it is characterized in that: thermosetting resin is resol or furane resin, the interior Si micro mist that contains.
5. according to the said SiC composite crucible that contains coating of claim 1, it is characterized in that: resistant to elevated temperatures barrier coat is chemical vapor deposition of silicon carbide (CVD-SiC) coating.
6. according to the said SiC composite crucible that contains coating of claim 1, it is characterized in that: resistant to elevated temperatures barrier coat for being coated in internal surface with thermosetting resin, generates one deck glass carbon coating after the charing
Priority Applications (1)
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CN2011202248982U CN202164379U (en) | 2011-06-29 | 2011-06-29 | Coated SiC composite crucible |
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CN2011202248982U CN202164379U (en) | 2011-06-29 | 2011-06-29 | Coated SiC composite crucible |
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CN202164379U true CN202164379U (en) | 2012-03-14 |
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CN2011202248982U Expired - Fee Related CN202164379U (en) | 2011-06-29 | 2011-06-29 | Coated SiC composite crucible |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102897758A (en) * | 2012-10-17 | 2013-01-30 | 海门市海菱碳业有限公司 | Preparation method of graphite crucible |
CN116924821A (en) * | 2023-09-13 | 2023-10-24 | 上海康碳复合材料科技有限公司 | Carbon-carbon crucible with silicon carbide anaerobic coating and preparation method thereof |
-
2011
- 2011-06-29 CN CN2011202248982U patent/CN202164379U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102897758A (en) * | 2012-10-17 | 2013-01-30 | 海门市海菱碳业有限公司 | Preparation method of graphite crucible |
CN116924821A (en) * | 2023-09-13 | 2023-10-24 | 上海康碳复合材料科技有限公司 | Carbon-carbon crucible with silicon carbide anaerobic coating and preparation method thereof |
CN116924821B (en) * | 2023-09-13 | 2023-12-12 | 上海康碳复合材料科技有限公司 | Carbon-carbon crucible with silicon carbide anaerobic coating and preparation method thereof |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120314 Termination date: 20120629 |