CN202142535U - Film field effect transistor and LCD - Google Patents
Film field effect transistor and LCD Download PDFInfo
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- CN202142535U CN202142535U CN201120262381U CN201120262381U CN202142535U CN 202142535 U CN202142535 U CN 202142535U CN 201120262381 U CN201120262381 U CN 201120262381U CN 201120262381 U CN201120262381 U CN 201120262381U CN 202142535 U CN202142535 U CN 202142535U
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- 230000005669 field effect Effects 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims description 63
- 239000004973 liquid crystal related substance Substances 0.000 claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 11
- 230000003071 parasitic effect Effects 0.000 abstract description 31
- 230000002035 prolonged effect Effects 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 description 8
- 230000000875 corresponding effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Abstract
The present utility model provides a film field effect transistor and an LCD. The film field effect transistor comprises a grid electrode, a source electrode and a drain electrode, the source electrode or the drain electrode is a recessed polygon which comprises a plurality of grooves; the other is provided with a plurality of protruding parts, each protruding part can be extended inside a corresponding groove; and a semiconductor film is arranged between the source electrode and the drain electrode to form a channel. The source electrode and the drain electrode are staggered, the staggered position is connected with the source electrode and the drain electrode through the channel, the effective length of the semiconductor film is prolonged, the channel width is also effectively increased, the channel length is greatly reduced as the semiconductor film is adopted to form the channel, the area of the drain electrode is reduced, the effective area of a parasitic capacitance between the drain electrode and the grid electrode is reduced, the negative role of the parasitic capacitance on the film field effect transistor is greatly reduced, and the normal work of the film field effect transistor is protected.
Description
Technical Field
The present invention relates to transistor technology, and more particularly to a thin film transistor and a liquid crystal display.
Background
A Thin Film Transistor-liquid crystal Display (TFT-LCD) is a liquid crystal Display, each liquid crystal pixel point is driven by a Thin Film Transistor (TFT) integrated behind it, and high-speed, high-brightness and high-contrast Display of screen information can be achieved. In the prior art, a Gate Driver IC (Gate Driver IC) is produced in a liquid crystal display by using technologies such as a Tape Carrier Package (TCP) and a Chip On Glass (COG), but the manufacturing cost of the above products is high and the design concept is behind, so that a Gate Driver IC is often implemented by using an amorphous silicon (a-Si) thin film transistor, that is, in a TFT applied to an LCD, a Channel (Channel) in which an a-Si thin film is filled between a Drain (Drain) and a Source (Source) as a TFT is formed to implement the Gate Driver IC, which can implement the same function as a common Gate Driver IC. In the a-Si thin film transistor, the movement speed of electrons in a channel formed by the a-Si thin film is very small, and a high voltage is required to drive a large-sized liquid crystal display, so that a sufficiently wide channel width is required to use the a-Si thin film transistor.
The inventor finds that the prior art has the following problems: since the conductivity between the drain and the source needs to be ensured, the channel length needs to be ensured to be small enough and the width W needs to be large enough, but this may cause parasitic capacitance generated between the drain and the Gate (Gate) to affect the Gate driver circuit and thus cause the Gate driver circuit to malfunction.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the present invention is to provide a thin film field effect transistor and a liquid crystal display for solving the defect that the parasitic capacitance generated between the drain electrode and the gate electrode affects the gate driver circuit and further causes the gate driver circuit to malfunction in the prior art.
To solve the above-mentioned problems, embodiments of the present invention provide a thin film transistor,
a thin film field effect transistor comprising: a gate, a source and a drain; wherein, the shape of one of the source electrode and the drain electrode presents a concave polygon, and the concave polygon comprises a plurality of grooves; the other has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves; and the semiconductor film is positioned between the source electrode and the drain electrode to form a channel.
In the transistor, the shape of the source electrode presents a concave polygon, and the concave polygon comprises a plurality of grooves; the drain electrode has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves.
In the transistor, a concave polygon presented by the appearance of the source electrode is specifically a plurality of connected concave shapes, and a first concave part in the middle of one concave shape is used as one groove; the drain electrode is in a pulse shape, and each protruding part in the pulse-shaped drain electrode extends to the first concave part in a concave shape.
In the transistor, in the plurality of recessed characters of the source electrode, two adjacent recessed characters are connected through a connecting bridge, and a second recessed part formed at the connecting bridge is the same as the first recessed part in shape and equal in area.
In the transistor, the pulse-shaped convex part in the drain electrode can also extend to the second concave part between two adjacent concave characters.
In the transistor, the semiconductor thin film is specifically an amorphous silicon thin film.
A liquid crystal display, said liquid crystal display comprising at least one shift register, one said shift register comprising at least one thin film field effect transistor, each said thin film field effect transistor comprising: a gate, a source and a drain; wherein, the shape of one of the source electrode and the drain electrode presents a concave polygon, and the concave polygon comprises a plurality of grooves; the other has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves; and the semiconductor film is positioned between the source electrode and the drain electrode to form a channel.
In the liquid crystal display, the source electrode is in a concave polygon shape, and the concave polygon comprises a plurality of grooves; the drain electrode has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves.
In the liquid crystal display, the concave polygon presented by the appearance of the source electrode is specifically a plurality of concave shapes which are connected together, and a first concave part in the middle of one concave shape is used as one groove; the drain electrode is in a pulse shape, and each protruding part in the pulse-shaped drain electrode extends to the first concave part in a concave shape.
In the liquid crystal display, two adjacent concave characters in the plurality of concave characters of the source electrode are connected through a connecting bridge, and a second concave part formed at the connecting bridge is the same as the first concave part in shape and equal in area; the pulse-shaped protrusion in the drain electrode can also extend to the second recessed portion between two adjacent debosses.
The utility model discloses an above-mentioned technical scheme's beneficial effect as follows: the source electrode and the drain electrode of the thin film field effect transistor are mutually staggered, the staggered positions are connected with the source electrode and the drain electrode through the channel, the effective length of the semiconductor thin film is prolonged by staggering, so that the channel width is effectively increased, and the channel adopts the semiconductor thin film, so that the channel length is greatly reduced; the area of the drain electrode is reduced, so that the effective area of the parasitic capacitance between the drain electrode and the grid electrode is reduced, the negative effect of the parasitic capacitance on the thin film field effect transistor is greatly reduced, and the normal work of the thin film field effect transistor is protected.
Drawings
Fig. 1 is a schematic diagram of an operating principle of a thin film transistor according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a thin film transistor structure according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a thin film transistor structure according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a third thin film transistor structure according to an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating calculation of an effective area of a parasitic capacitor of a thin film transistor according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, in the a-Si thin film transistor, an amorphous silicon (a-Si) thin film is filled between a Drain and a Source as a channel of the TFT. The channel length L is the distance between points e and f, and the longer the length L, the greater the resistance between the drain and the source, and the poorer the conductivity, so the value of the length L should be shortened as much as possible. The channel width W is the line length of the broken line where the four points abcd are located, and the larger the width W is, the smaller the resistance between the drain and the source is, and the stronger the conductivity is, so the value of the width W should be increased as much as possible. In other words, in order to drive a large-sized liquid crystal display, the aspect ratio, i.e., the channel width W/the channel length L, should be increased as much as possible.
In the thin film transistor, a parasitic capacitance (Cgd) is generated between the drain electrode and the Gate electrode, the capability of the parasitic capacitance for accommodating charges is related to the effective area between the drain electrode and the Gate electrode, and the larger the effective area is, the stronger the capability of the parasitic capacitance for accommodating charges is; the parasitic capacitance may cause the gate driver integrated circuit formed by the thin film field effect transistor to malfunction.
An embodiment of the utility model provides a thin film field effect transistor, as shown in fig. 2, include:
a gate, a source and a drain; wherein,
the shape of one of the source electrode and the drain electrode presents a concave polygon, and the concave polygon comprises a plurality of grooves; the other has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves;
and the semiconductor film is positioned between the source electrode and the drain electrode to form a channel.
The source electrode and the drain electrode of the thin film field effect transistor are mutually staggered, the source electrode and the drain electrode are connected at the staggered positions through the channels, the effective length of the semiconductor film is prolonged due to the staggering, the width of the channel is effectively increased, and the length of the channel is greatly reduced due to the adoption of the semiconductor film; the area of the drain electrode is reduced, so that the effective area of the parasitic capacitance between the drain electrode and the grid electrode is reduced, the negative effect of the parasitic capacitance on the thin film field effect transistor is greatly reduced, and the normal work of the thin film field effect transistor is protected.
An insulating material is filled between the grid and the source; an insulating material is filled between the grid and the drain; and an insulating material is filled between the grid and the film.
In a preferred embodiment, the source electrode has a concave polygon shape, and the concave polygon shape comprises a plurality of grooves; the drain electrode has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves.
In a preferred embodiment, the source electrode presents a concave polygon in shape, specifically a plurality of concave shapes connected together, and a first concave part in the middle of one concave shape is used as one groove; the drain electrode is in a pulse shape, and each protruding part in the pulse-shaped drain electrode extends to the first concave part in a concave shape.
In the plurality of concave shapes of the source electrode, the included angle between the left part and the bottom part of each concave shape is 90 degrees, and the included angle between the bottom part and the right part is 90 degrees.
In a preferred embodiment, as shown in fig. 2, in the plurality of the recessed shapes of the source, two adjacent recessed shapes are connected by a connecting bridge, and a second recessed portion formed at the connecting bridge has the same shape and area as the first recessed portion.
As shown in fig. 4, the pulse-shaped protrusion in the drain electrode can also extend to the second concave portion between two adjacent intaglio characters. In the formed thin film transistor, the source electrode and the drain electrode are mutually staggered like fingers which are staggered together.
Or in a preferred embodiment, as shown in fig. 3, adjacent two of the recessed characters of the source are not connected by a connecting bridge.
In a preferred embodiment, the semiconductor thin film is specifically an amorphous silicon thin film.
Parasitic capacitance is generated between a drain electrode and a grid electrode in the thin film field effect transistor, the capacity of the parasitic capacitance for accommodating charges is related to the effective area between the drain electrode and the grid electrode, and the larger the effective area is, the stronger the capacity of the parasitic capacitance for accommodating charges is. By applying the thin film field effect transistor provided by each embodiment, the source electrode and the drain electrode are mutually staggered, the source electrode and the drain electrode are connected at the staggered positions through the channels, the effective length of the a-Si thin film is prolonged due to the staggering between the source electrode and the drain electrode, so the channel width W is effectively increased, and the channel length L is greatly reduced due to the small thickness of the a-Si thin film adopted by the channel, the width-to-length ratio is optimized, and the large liquid crystal display can be driven.
Specifically, in the prior art, the channel width W and the channel length L are as shown in fig. 1, and without loss of generality, the ab line segment is set to be 200 units — for example, 200 micrometers, the bc line segment is 100 units, and the cd line segment is 200 units, then:
the channel width W is ab + bc + cd is 500 units;
the channel length L is the thickness of the amorphous silicon thin film.
The effective area of the parasitic capacitor 1 is 200 × 100 to 20000 units2。
In the embodiment of the present invention, the trench width W and the trench length L are as shown in fig. 5, the AB line segment is 100 units, the BC line segment is 50 units, and the CD line segment is 100 units;
similarly, the EF line segment is 100 units, the FG line segment is 50 units, and the GH line segment is 100 units; then:
channel width W (AB + BC + CD) + (EF + FG + GH) 250 units +250 units 500 units;
the channel length L is the thickness of the amorphous silicon thin film.
The effective area of the parasitic capacitor 2 is 2 × 2 (100 × 50) 10000 units2。
It can be seen that the effective area of the parasitic capacitor 2 is only half of the effective area of the parasitic capacitor 1, but the channel width W is equal. The area of the drain electrode required for realizing the preset width-length ratio is reduced, the effective area of a parasitic capacitor between the drain electrode and the grid electrode is reduced, the capacity of the parasitic capacitor for accommodating charges is reduced, the negative effect of the parasitic capacitor on the thin film field effect transistor is greatly reduced, and the normal work of the thin film field effect transistor is protected.
An embodiment of the utility model provides a liquid crystal display, liquid crystal display includes at least one Shift Register (Shift Register), one Shift Register includes at least one thin film field effect transistor, include among the thin film field effect transistor:
a gate, a source and a drain; wherein,
the shape of one of the source electrode and the drain electrode presents a concave polygon, and the concave polygon comprises a plurality of grooves; the other has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves;
and the semiconductor film is positioned between the source electrode and the drain electrode to form a channel.
The source electrode and the drain electrode of the thin film field effect transistor are mutually staggered, the source electrode and the drain electrode are connected at the staggered positions through the channels, the effective length of the semiconductor film is prolonged due to the staggering, the width of the channel is effectively increased, and the length of the channel is greatly reduced due to the adoption of the semiconductor film; the area of the drain electrode is reduced, so that the effective area of the parasitic capacitance between the drain electrode and the grid electrode is reduced, the negative effect of the parasitic capacitance on the thin film field effect transistor is greatly reduced, and the normal work of the thin film field effect transistor is protected.
In a preferred embodiment, the source electrode has a concave polygon shape, and the concave polygon shape comprises a plurality of grooves; the drain electrode has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves.
In a preferred embodiment, the source electrode presents a concave polygon in shape, specifically a plurality of concave shapes connected together, and a first concave part in the middle of one concave shape is used as one groove; the drain electrode is in a pulse shape, and each protruding part in the pulse-shaped drain electrode extends to the first concave part in a concave shape.
In a preferred embodiment, in the plurality of the recessed characters of the source, two adjacent recessed characters are connected by a connecting bridge, and a second recessed portion formed at the connecting bridge has the same shape and area as the first recessed portion; the pulse-shaped protrusion in the drain electrode can also extend to the second recessed portion between two adjacent debosses.
The semiconductor thin film is specifically an amorphous silicon thin film.
Parasitic capacitance is generated between a drain electrode and a grid electrode in the thin film field effect transistor, the capability of the parasitic capacitance for containing charges is positively correlated with the effective area between the drain electrode and the grid electrode, and the larger the effective area is, the stronger the capability of the parasitic capacitance for containing the charges is. By applying the thin film field effect transistor provided by each embodiment, the source electrode and the drain electrode are mutually staggered, the staggered positions are connected with the source electrode and the drain electrode through the channel, the effective length of the a-Si thin film is prolonged due to the staggering between the source electrode and the drain electrode, so the channel width W is effectively increased, and the channel length L is greatly reduced due to the small thickness of the a-Si thin film adopted by the channel, the width-to-length ratio is optimized, and the large liquid crystal display can be driven. Therefore, compared with the prior art, the area of the drain electrode required for realizing the predetermined width-length ratio is reduced, so that the effective area of the parasitic capacitance between the drain electrode and the grid electrode is reduced, the capability of the parasitic capacitance for accommodating charges is reduced, the negative effect of the parasitic capacitance on the thin film field effect transistor is greatly reduced, and the normal operation of the thin film field effect transistor is protected.
The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A thin film field effect transistor, comprising:
a gate, a source and a drain; wherein,
the shape of one of the source electrode and the drain electrode presents a concave polygon, and the concave polygon comprises a plurality of grooves; the other has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves;
and the semiconductor film is positioned between the source electrode and the drain electrode to form a channel.
2. The transistor of claim 1,
the source electrode is in a concave polygon shape, and the concave polygon comprises a plurality of grooves;
the drain electrode has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves.
3. The transistor of claim 2,
the concave polygon presented by the appearance of the source electrode is specifically a plurality of concave shapes which are connected together, and a first concave part in the middle of one concave shape is used as the groove;
the drain electrode is in a pulse shape, and each protruding part in the pulse-shaped drain electrode extends to the first concave part in a concave shape.
4. The transistor of claim 3,
in the plurality of recessed characters of the source electrode, two adjacent recessed characters are connected through a connecting bridge, and a second recessed part formed at the connecting bridge is the same as the first recessed part in shape and equal in area.
5. The transistor of claim 4,
the pulse-shaped protrusion in the drain electrode can also extend to the second recessed portion between two adjacent debosses.
6. The transistor of claim 1,
the semiconductor thin film is specifically an amorphous silicon thin film.
7. A liquid crystal display, said liquid crystal display comprising at least one shift register, one said shift register comprising at least one thin film field effect transistor, each said thin film field effect transistor comprising:
a gate, a source and a drain; wherein,
the shape of one of the source electrode and the drain electrode presents a concave polygon, and the concave polygon comprises a plurality of grooves; the other has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves;
and the semiconductor film is positioned between the source electrode and the drain electrode to form a channel.
8. The liquid crystal display of claim 7,
the source electrode is in a concave polygon shape, and the concave polygon comprises a plurality of grooves;
the drain electrode has a plurality of projections, and each projection is capable of extending into a corresponding one of the grooves.
9. The liquid crystal display of claim 8,
the concave polygon presented by the appearance of the source electrode is specifically a plurality of concave shapes which are connected together, and a first concave part in the middle of one concave shape is used as the groove;
the drain electrode is in a pulse shape, and each protruding part in the pulse-shaped drain electrode extends to the first concave part in a concave shape.
10. The liquid crystal display of claim 9,
in the plurality of concave characters of the source electrode, two adjacent concave characters are connected through a connecting bridge, and a second concave part formed at the connecting bridge is the same as the first concave part in shape and equal in area;
the pulse-shaped protrusion in the drain electrode can also extend to the second recessed portion between two adjacent debosses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120262381U CN202142535U (en) | 2011-07-22 | 2011-07-22 | Film field effect transistor and LCD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120262381U CN202142535U (en) | 2011-07-22 | 2011-07-22 | Film field effect transistor and LCD |
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| Publication Number | Publication Date |
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| CN202142535U true CN202142535U (en) | 2012-02-08 |
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| CN201120262381U Expired - Lifetime CN202142535U (en) | 2011-07-22 | 2011-07-22 | Film field effect transistor and LCD |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103984137A (en) * | 2014-02-10 | 2014-08-13 | 友达光电股份有限公司 | Display panel and active element thereof |
| CN104600124A (en) * | 2015-01-21 | 2015-05-06 | 重庆京东方光电科技有限公司 | Thin film transistor structure, manufacturing method thereof, array substrate and mask plate |
| CN107121865A (en) * | 2017-06-07 | 2017-09-01 | 深圳市华星光电技术有限公司 | A kind of thin film transistor (TFT), TFT substrate and display panel |
| CN107204375A (en) * | 2017-05-19 | 2017-09-26 | 深圳市华星光电技术有限公司 | Thin film transistor (TFT) and preparation method thereof |
| US10509279B2 (en) | 2017-06-07 | 2019-12-17 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Thin film transistor, TFT substrate, and display panel having source eletrodes and gate electrodes comprising U-shape structures |
| CN111092091A (en) * | 2018-10-08 | 2020-05-01 | Tcl集团股份有限公司 | active backlight LED light source plate driven by a-Si TFT device and backlight module |
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| CN111092093A (en) * | 2018-10-08 | 2020-05-01 | Tcl集团股份有限公司 | active backlight LED light source plate driven by a-Si TFT device and backlight module |
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2011
- 2011-07-22 CN CN201120262381U patent/CN202142535U/en not_active Expired - Lifetime
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| CN103984137B (en) * | 2014-02-10 | 2017-04-12 | 友达光电股份有限公司 | Display panel and active element thereof |
| CN103984137A (en) * | 2014-02-10 | 2014-08-13 | 友达光电股份有限公司 | Display panel and active element thereof |
| CN104600124A (en) * | 2015-01-21 | 2015-05-06 | 重庆京东方光电科技有限公司 | Thin film transistor structure, manufacturing method thereof, array substrate and mask plate |
| US10403755B2 (en) | 2017-05-19 | 2019-09-03 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor and method for manufacturing the same |
| CN107204375B (en) * | 2017-05-19 | 2019-11-26 | 深圳市华星光电技术有限公司 | Thin film transistor and its manufacturing method |
| CN107204375A (en) * | 2017-05-19 | 2017-09-26 | 深圳市华星光电技术有限公司 | Thin film transistor (TFT) and preparation method thereof |
| WO2018209736A1 (en) * | 2017-05-19 | 2018-11-22 | 深圳市华星光电技术有限公司 | Thin film transistor and manufacturing method therefor |
| WO2018223427A1 (en) * | 2017-06-07 | 2018-12-13 | 深圳市华星光电半导体显示技术有限公司 | Thin film transistor, tft substrate, and display panel |
| CN107121865A (en) * | 2017-06-07 | 2017-09-01 | 深圳市华星光电技术有限公司 | A kind of thin film transistor (TFT), TFT substrate and display panel |
| US10509279B2 (en) | 2017-06-07 | 2019-12-17 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Thin film transistor, TFT substrate, and display panel having source eletrodes and gate electrodes comprising U-shape structures |
| CN111092091A (en) * | 2018-10-08 | 2020-05-01 | Tcl集团股份有限公司 | active backlight LED light source plate driven by a-Si TFT device and backlight module |
| CN111092092A (en) * | 2018-10-08 | 2020-05-01 | Tcl集团股份有限公司 | active backlight LED light source plate driven by a-Si TFT device and backlight module |
| CN111092093A (en) * | 2018-10-08 | 2020-05-01 | Tcl集团股份有限公司 | active backlight LED light source plate driven by a-Si TFT device and backlight module |
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Granted publication date: 20120208 |