CN202134562U

CN202134562U - Ultrathin high-efficiency single crystalline silicon solar cell

Info

Publication number: CN202134562U
Application number: CN 201120218179
Authority: CN
Inventors: 倪云达; 葛正芳; 胡宏珊
Original assignee: SHUNDA SEMICONDUCTOR DEVELOPMENT Co Ltd JIANGSU
Current assignee: SHUNDA SEMICONDUCTOR DEVELOPMENT Co Ltd JIANGSU
Priority date: 2011-06-26
Filing date: 2011-06-26
Publication date: 2012-02-01
Anticipated expiration: 2021-06-26

Abstract

The utility model discloses an ultrathin high-efficiency single crystalline silicon solar cell comprising a P-type silicon chip, wherein a front side of the P-type silicon chip is provided with an NP junction acting as a negative electrode, a front side of the NP junction is provided with a silicon oxide antireflective film, a positive electrode metal electrode passes through the silicon oxide antireflective film and forms an ohmic contact with the NP junction; a reverse side of the P-type silicon chip is provided with a P+ layer, a reverse side of the P+ layer is provided with an aluminium back surface field, back electrodes are arranged in the aluminium back surface field; and front side grid lines comprise main grid lines and fine grid lines, a shadow area of the front side grid lines accounts for 15% to 16% of a front side gross area, wherein a shadow area of the fine grid lines accounts for 10% to 11% of the front side gross area. The ultrathin high-efficiency single crystalline silicon solar cell provided by the utility model has the advantages of reasonable structure, good working performance and low manufacturing cost.

Description

A kind of super-thin high efficient monocrystaline silicon solar cell

Technical field

The utility model relates to a kind of solar cell, relates in particular to a kind of super-thin high efficient monocrystaline silicon solar cell.

Background technology

Existing solar cell under the energy substitution form and human ecological environment pressure of the sternness in world's solar energy power generating industry and market, is continuing progressively to promote fast development down with the brute force of perfect rules policy progressively.The nearest 10 averaging of income growth rate of the annual production of solar cell are 37%, and nearest 5 averaging of income growth rate are 45%, become one of industry with fastest developing speed in the world.

The major obstacle that solar cell is applied is that the cost of electricity-generating cost of comparing with the thermal power generation cost is too high.But, auspicious omen has been arranged also recently, the sharp green energy resource of Baoding English Co., Ltd contracts Dunhuang 10MW large-scale power station, promises to undertake 0.69 yuan of every degree electricity, and this only explains, in case, near the thermal power generation price, reduces cost, and raising the efficiency is the eternal pursuit of technical staff.Concentrator cell then is through thin slice, and means such as high-effective concentration can reduce cost of electricity-generating greatly.The silicon chip cost accounts for 40% to 60% of assembly cost, if be reduced to 160 μ m to silicon chip 200 μ m thickness, can make the silicon chip cost descend 20%.Concentrator cell is under 12 to 15 sun conditions, and its conversion efficiency is 20% to 21%, and the average conversion efficiency of monocrystalline silicon conventional batteries is 17% at present, the every raising one percentage point of its conversion efficiency, and the battery manufacturing cost descends 7%; Concentrator cell improves 3% to 4%, and production cost of cells descends 20%.

The utility model content

Goal of the invention: in order to overcome the deficiency that exists in the prior art, it is a kind of rational in infrastructure that the utility model provides, the super-thin high efficient monocrystaline silicon solar cell that service behaviour is good.

Technical scheme: for solving the problems of the technologies described above, the technical scheme of the utility model sampling is:

A kind of super-thin high efficient monocrystaline silicon solar cell comprises P type silicon chip, is provided with the NP knot as negative pole in the front of P type silicon chip, is provided with the silica antireflective coating in the front of NP knot, and the cathode metal electrode passes the silica antireflective coating and the NP knot forms ohmic contact; Reverse side at P type silicon chip is provided with P ⁺Layer is at P ⁺The reverse side of layer is provided with aluminium back of the body field, in aluminium back of the body field, is provided with back electrode; Front gate line comprises main grid line and thin grid line, and the shaded area of front gate line accounts for 15%～16% of the front gross area, and wherein the shaded area of thin grid line accounts for 10%～11% of the front gross area.

Said thin grid line width is 0.09mm～0.1mm, and intracardiac distance is 1mm～1.1mm in the thin grid line.

Said P type silicon chip is 165 monocrystalline silicon pieces.

Beneficial effect: the super-thin high efficient monocrystaline silicon solar cell that the utility model provides, rational in infrastructure, service behaviour is good, and low cost of manufacture.

Description of drawings

Fig. 1 is the structural representation of the utility model.

Embodiment

Below in conjunction with accompanying drawing the utility model is done explanation further.

Be depicted as a kind of 165 super-thin high efficient monocrystaline silicon solar cells like accompanying drawing 1; Comprise P type silicon chip 1; The NP that is provided with as negative pole in the front of P type silicon chip 1 ties 2; Front at NP knot 2 is provided with silica antireflective coating 3, and cathode metal electrode 4 passes silica antireflective coating 3 and forms ohmic contact with NP knot 2; Reverse side at P type silicon chip 1 is provided with P ⁺Layer 5 is at P ⁺The reverse side of layer 5 is provided with aluminium back of the body field 6, in aluminium back of the body field 6, is provided with back electrode 7; Front gate line comprises main grid line and thin grid line, and the shaded area of front gate line accounts for 15%～16% of the front gross area, and wherein the shaded area of thin grid line accounts for 10%～11% of the front gross area; Said thin grid line width is 0.09mm～0.1mm, and intracardiac distance is 1.1mm in the thin grid line.

The above only is the preferred implementation of the utility model; Be noted that for those skilled in the art; Under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection range of the utility model.

Claims

1. super-thin high efficient monocrystaline silicon solar cell; It is characterized in that: this solar cell comprises P type silicon chip (1); The NP that is provided with as negative pole in the front of P type silicon chip (1) ties (2); Front at NP knot (2) is provided with silica antireflective coating (3), and cathode metal electrode (4) passes silica antireflective coating (3) and forms ohmic contact with NP knot (2); Reverse side at P type silicon chip (1) is provided with P ⁺Layer (5) is at P ⁺The reverse side of layer (5) is provided with the aluminium back of the body (6), in the aluminium back of the body (6), is provided with back electrode (7); Front gate line comprises main grid line and thin grid line, and the shaded area of front gate line accounts for 15%～16% of the front gross area, and wherein the shaded area of thin grid line accounts for 10%～11% of the front gross area.

2. super-thin high efficient monocrystaline silicon solar cell according to claim 1 is characterized in that: thin grid line width is 0.09mm～0.1mm, and intracardiac distance is 1mm～1.1mm in the thin grid line.

3. super-thin high efficient monocrystaline silicon solar cell according to claim 2 is characterized in that: said P type silicon chip (1) is 165 monocrystalline silicon pieces.