CN202123744U - Planar silicon target material - Google Patents
Planar silicon target material Download PDFInfo
- Publication number
- CN202123744U CN202123744U CN2011202275246U CN201120227524U CN202123744U CN 202123744 U CN202123744 U CN 202123744U CN 2011202275246 U CN2011202275246 U CN 2011202275246U CN 201120227524 U CN201120227524 U CN 201120227524U CN 202123744 U CN202123744 U CN 202123744U
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- material layer
- silicon
- flat plate
- silver
- plate type
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Abstract
The utility model discloses a planar silicon target material, comprising a flat plate type silicon material. The planar silicon target material is characterized in that the back of the flat plate type silicon material is sequentially coated with a chromium material layer, a nickel-chromium material layer and a silver material layer, and an indium material layer is coated on the silver material layer; the flat plate type silicon material is square or rectangle; and the flat plate type silicon material is a polycrystalline silicon. The indium material layer is high in bonding strength with the flat plate type silicon material and better in electrical conductivity, so that the use reliability of the target material is improved.
Description
Technical field
The utility model relates to the sputter coating technical field, especially a kind of planar silicon target that is used for sputter coating.
Background technology
Existing planar silicon target is to be coated with last layer phosphide material layer to carry out sintering then and process the target product at the back side of plate silicon material mostly; The planar silicon target is mainly used in plated film, in filming process is to utilize phosphide material layer and the copper of planar silicon target to carry out carrying out the plated film operation again after bonding; But this planar silicon target, because the hardness of silicon is high, the hardness of indium is soft, fusing point is low, both bonding strengths are not ideal enough, in use occur phosphide material layer and plate silicon material easily and break away from, and influence the normal use of planar silicon target.
The utility model content
The technical problem that the utility model will solve provides a kind of planar silicon target, and the bonding strength height and the electric conductivity of phosphide material layer and plate silicon material are better, improves the reliability that target uses.
For achieving the above object, the technical scheme of the utility model is: a kind of planar silicon target, comprise plate silicon material, and the back side of plate silicon material is coated with chromium material layer, nickel chromium triangle material layer, silver material layer successively, on silver material layer, is coated with the phosphide material layer at last.
Described plate silicon material is a square or rectangular.
Described plate silicon material is a polysilicon.
The utility model is followed successively by ground floor chromium plating owing to carry out plated film earlier at the plate silicon material back side, and the hardness of chromium is soft slightly than silicon; Second layer nickel plating chromium, the hardness of nickel chromium triangle are soft slightly than chromium again, and the 3rd layer silver-plated; The hardness of silver is soft slightly than nickel chromium triangle again, and the hardness of each layer is reduced successively, and the bond strength of each layer can be guaranteed again; On silver material layer, spray the phosphide material layer at last again, because the hardness of indium is suitable with silver, phosphide material layer and silver material layer ability combine well; The bonding strength and the electric conductivity of final assurance phosphide material layer and plate silicon material are better, improve the reliability that target uses.
Description of drawings
Fig. 1 is the utility model front view.
Fig. 2 is the A-A cutaway view of Fig. 1.
The specific embodiment
Below in conjunction with accompanying drawing and concrete embodiment the utility model is done further explain.
Fig. 1, shown in Figure 2, a kind of planar silicon target comprises plate silicon material 1, the back side of plate silicon material 1 is coated with chromium material layer 2, nickel chromium triangle material layer 3, silver material layer 4 successively, on silver material layer 4, is coated with phosphide material layer 5 at last.
Described plate silicon material 1 is a square or rectangular.
Described plate silicon material is a polysilicon.
Below only be preferred embodiment of the utility model, those skilled in the art is so long as the change of doing to be equal to by claim all falls into the protection domain of this case.
Claims (3)
1. a planar silicon target comprises plate silicon material, it is characterized in that: the back side of plate silicon material is coated with chromium material layer, nickel chromium triangle material layer, silver material layer successively, on silver material layer, is coated with the phosphide material layer at last.
2. a kind of planar silicon target according to claim 1 is characterized in that: described plate silicon material is a square or rectangular.
3. a kind of planar silicon target according to claim 1 is characterized in that: described plate silicon material is a polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202275246U CN202123744U (en) | 2011-06-30 | 2011-06-30 | Planar silicon target material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202275246U CN202123744U (en) | 2011-06-30 | 2011-06-30 | Planar silicon target material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202123744U true CN202123744U (en) | 2012-01-25 |
Family
ID=45486814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202275246U Expired - Fee Related CN202123744U (en) | 2011-06-30 | 2011-06-30 | Planar silicon target material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202123744U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103567583A (en) * | 2012-07-30 | 2014-02-12 | 宁波江丰电子材料有限公司 | Method for welding aluminum target assemblies |
-
2011
- 2011-06-30 CN CN2011202275246U patent/CN202123744U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103567583A (en) * | 2012-07-30 | 2014-02-12 | 宁波江丰电子材料有限公司 | Method for welding aluminum target assemblies |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: XIAMEN YINGRI NEW MATERIAL TECHNOLOGY CO., LTD. Free format text: FORMER NAME: XIAMEN YINGRI OPTOELECTRONIC TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 361000, 3F, No. 6 Xiang Yue Road, Xiangan Industrial Zone, torch hi tech Zone, Fujian, Xiamen Patentee after: Xiamen Yingri New Material Technology Co., Ltd. Address before: 361000, 3F, No. 6 Xiang Yue Road, Xiangan Industrial Zone, torch hi tech Zone, Fujian, Xiamen Patentee before: Xiamen Sunney Optoelectronics Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120125 Termination date: 20150630 |
|
| EXPY | Termination of patent right or utility model |