CN202115116U - Ultraviolet laser accurate marking device - Google Patents
Ultraviolet laser accurate marking device Download PDFInfo
- Publication number
- CN202115116U CN202115116U CN2011201584007U CN201120158400U CN202115116U CN 202115116 U CN202115116 U CN 202115116U CN 2011201584007 U CN2011201584007 U CN 2011201584007U CN 201120158400 U CN201120158400 U CN 201120158400U CN 202115116 U CN202115116 U CN 202115116U
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- ultraviolet
- laser
- scanning galvanometer
- marking device
- light beams
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Abstract
The utility model relates to an ultraviolet laser accurate marking device. The output end of an ultraviolet Q-switching solid laser device is provided with a beam expander, the output end of the beam expander is provided with a scanning galvanometer, the output end of the scanning galvanometer is connected with a focus lens, and a two-dimensional moving platform is arranged below the focus lens. Light beams emitted by the ultraviolet Q-switching solid laser device is radiated into the beam expander, the beam expander outputs collimated light beams, the collimated light beams pass through the scanning galvanometer and then enter the focus lens, and the focus of the light beams which are focused by the focus lens is located on a processing workpiece of the two-dimensional moving platform. By means of the ultraviolet Q-switching solid laser device, when ultraviolet laser with inherent characteristics is reacted with materials, the ultraviolet laser enables molecules to be stripped by breaking chemical bonds of the materials instead of by removing substances through thermal ablation, thereby being capable of greatly reducing areas of thermal influence. Ultraviolet laser processing is also called cold processing, and can obtain good edge effect. The ultraviolet laser accurate marking device resolves problems of position accuracy and effect during the process of laser marking, and is applicable to wafer level marking in the semiconductor field.
Description
Technical field
The utility model relates to the accurate marking device of a kind of Ultra-Violet Laser, is used for the wafer scale mark of semiconductor packages field.
Background technology
Laser marking is to utilize the laser of high-energy-density that workpiece is carried out local irradiation, makes the chemical reaction of skin-material vaporization or generation change color, thereby stays a kind of marking method of permanent marker.Laser marking has engraving and mask imaging dual mode; The mask-type mark is imaged onto surface of the work and the mark of ablating out with laser with reticle pattern, and the mark of engraving formula is a kind of high speed global function marking system, and laser beam reflects after the flat field optical lens focuses on surface of the work through the two-dimension optical scanning galvanometer; Make the material vaporization by the track of setting under the computer control; Can get various literal, symbol and pattern etc., character boundary can be from the millimeter to the micron dimension, and laser labelling is nonvolatil not easy to wear; This has special meaning to product false proof, is used for electronic devices and components in a large number, integrated circuit is beaten the trade mark model, beaten numbering etc. to printed circuit board (PCB).
The laser marking technology has been widely used in all trades and professions, is high-quality, efficient, and wide prospect has been opened up in pollution-free and modern cheaply processing.Along with the continuous expansion of modern laser index carving application, to the device systems miniaturization that laser is made, high efficiency and integrated requirement are also increasingly high.
Ultraviolet band laser technical development in recent years is very fast, because the electron energy band transition takes place under the ultraviolet waves laser action material, breaks or weaken intermolecular associative key; Thereby realize degrading processing; The processing edge is very neat, therefore in the laser labelling technology, is a dark horse, and especially receives the attention of microelectronic industry; Can realize the sub-micron mark, be widely used in microelectronic.
The utility model content
The purpose of the utility model is to overcome the deficiency that prior art exists, and a kind of mark precision height, width is provided, the mark heat-affected zone is little and the regional big Ultra-Violet Laser precision of mark marking device.
The purpose of the utility model realizes through following technical scheme:
The accurate marking device of Ultra-Violet Laser; Comprise laser instrument and beam expanding lens; Characteristics are: said laser instrument is the ultraviolet Q-switch solid laser, and the output of ultraviolet Q-switch solid laser is provided with beam expanding lens, and the output of said beam expanding lens is furnished with scanning galvanometer; The output of said scanning galvanometer is connected with focus lamp, and the arranged beneath of focus lamp has two-dimentional mobile platform; The light beam that said ultraviolet Q-switch solid laser sends is injected beam expanding lens, the light beam of beam expanding lens output collimation, and the light beam of collimation gets into focus lamp behind scanning galvanometer, and the beam focus after focus lamp focuses on is positioned on the processing work of two-dimentional mobile platform.
Further, the accurate marking device of above-mentioned Ultra-Violet Laser, wherein, said ultraviolet Q-switch solid laser is that output wavelength is the ultraviolet Q-switch solid laser of 355nm or 266nm.
Further, the accurate marking device of above-mentioned Ultra-Violet Laser, wherein, said focus lamp is the F-Theta mirror.
Again further, the accurate marking device of above-mentioned Ultra-Violet Laser wherein, is equipped with getter device on the said two-dimentional mobile platform.
The substantive distinguishing features of the utility model technical scheme is mainly reflected in progressive:
Adopt the ultraviolet Q-switched pulse laser, Ultra-Violet Laser, is not to remove material through thermal ablation, but through the chemical bond that interrupts material molecule is peeled off with material effects the time because of its inherent characteristic, can greatly reduce the heat-affected zone; Ultra-Violet Laser processing is called cold working again, can obtain good edge effect; Solve positional precision and effect problem in the laser marking process, be specially adapted to the mark of semiconductor applications wafer scale and use, realized micron and sub-micron mark.
Description of drawings
Below in conjunction with accompanying drawing the utility model technical scheme is described further:
Fig. 1: the organigram of the utility model.
The implication of each Reference numeral among the figure:
1-ultraviolet Q-switch solid laser; The 2-beam expanding lens; The 3-scanning galvanometer; The 4-focus lamp; 5-two dimension mobile platform.
The specific embodiment
As shown in Figure 1, the accurate marking device of Ultra-Violet Laser comprises laser instrument and beam expanding lens; Laser instrument is that output wavelength is the ultraviolet Q-switch solid laser 1 of 355nm or 266nm, and the pulsewidth of ultraviolet Q-switch solid laser 1 is a nanosecond order, and the output of ultraviolet Q-switch solid laser 1 is provided with beam expanding lens 2; The output of beam expanding lens 2 is furnished with scanning galvanometer 3, and the output of scanning galvanometer 3 is connected with focus lamp 4, and focus lamp 4 is the F-Theta mirror; Focus lamp 4 is moved up and down by Electric Machine Control; And then control beam focus position, the arranged beneath of focus lamp 4 has two-dimentional mobile platform 5, on the two-dimentional mobile platform 5 getter device is installed; The light beam that ultraviolet Q-switch solid laser 1 sends is injected beam expanding lens 2, the light beam of beam expanding lens 2 output collimations, and the light beam of collimation gets into focus lamp 4 behind scanning galvanometer 3, and the beam focus after focus lamp 4 focuses on is positioned on the processing work of two-dimentional mobile platform 5.
During laser marking, the laser that ultraviolet Q-switch solid laser 1 sends focuses on the work piece surface, during with material effects, is not to remove material through thermal ablation, but through the chemical bond that interrupts material molecule is peeled off, and forms mark.Limited because of the scanning area of scanning galvanometer, the mark of small breadth inner laser is controlled separately by scanning galvanometer, and the large format mark moves splicing by platform and scanning galvanometer is controlled completion jointly.During mark, the getter device suction gasification or the crushing material in mark zone.By high-resolution assist location image system, the cursor position of can fighting each other is accurately located, and the whole mark precision of equipment is controlled in the 10um.
Adopting output wavelength is 355nm ultraviolet Q-switched pulse laser; Ultra-Violet Laser with material effects the time, is not to remove material through thermal ablation because of its inherent characteristic; But molecule is peeled off through the chemical bond that interrupts material, make in this way greatly to reduce the heat-affected zone; Ultra-Violet Laser processing is called cold working again, can obtain good edge effect.
The utility model has solved positional precision and the effect problem in the laser marking process, has also enlarged the application of laser marking in little manufacturing field simultaneously, is specially adapted to the mark of semiconductor applications wafer scale and uses; With respect to traditional laser mark printing device, the utlity model has many advantages, effectively reduce diffraction effect like the ultraviolet short wavelength, can realize micron and sub-micron mark.
It is emphasized that: above only is the preferred embodiment of the utility model; Be not that the utility model is done any pro forma restriction; Every technical spirit according to the utility model all still belongs in the scope of the utility model technical scheme any simple modification, equivalent variations and modification that above embodiment did.
Claims (4)
1. the accurate marking device of Ultra-Violet Laser; Comprise laser instrument and beam expanding lens; It is characterized in that: said laser instrument is the ultraviolet Q-switch solid laser, and the output of ultraviolet Q-switch solid laser is provided with beam expanding lens, and the output of said beam expanding lens is furnished with scanning galvanometer; The output of said scanning galvanometer is connected with focus lamp, and the arranged beneath of focus lamp has two-dimentional mobile platform; The light beam that said ultraviolet Q-switch solid laser sends is injected beam expanding lens, the light beam of beam expanding lens output collimation, and the light beam of collimation gets into focus lamp behind scanning galvanometer, and the beam focus after focus lamp focuses on is positioned on the processing work of two-dimentional mobile platform.
2. the accurate marking device of Ultra-Violet Laser according to claim 1, it is characterized in that: said ultraviolet Q-switch solid laser is that output wavelength is the ultraviolet Q-switch solid laser of 355nm or 266nm.
3. the accurate marking device of Ultra-Violet Laser according to claim 1, it is characterized in that: said focus lamp is the F-Theta mirror.
4. the accurate marking device of Ultra-Violet Laser according to claim 1 is characterized in that: on the said two-dimentional mobile platform getter device is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201584007U CN202115116U (en) | 2011-05-18 | 2011-05-18 | Ultraviolet laser accurate marking device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201584007U CN202115116U (en) | 2011-05-18 | 2011-05-18 | Ultraviolet laser accurate marking device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202115116U true CN202115116U (en) | 2012-01-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201584007U Expired - Fee Related CN202115116U (en) | 2011-05-18 | 2011-05-18 | Ultraviolet laser accurate marking device |
Country Status (1)
| Country | Link |
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| CN (1) | CN202115116U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102218936A (en) * | 2011-05-18 | 2011-10-19 | 苏州德龙激光有限公司 | Precise marking device by ultraviolet laser |
| CN103328224A (en) * | 2012-03-22 | 2013-09-25 | 深圳市杰普特电子技术有限公司 | Pulse optical fiber laser marking system |
| CN109014584A (en) * | 2018-09-06 | 2018-12-18 | 大族激光科技产业集团股份有限公司 | A kind of micro-processing method of laser ablation paint layer |
-
2011
- 2011-05-18 CN CN2011201584007U patent/CN202115116U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102218936A (en) * | 2011-05-18 | 2011-10-19 | 苏州德龙激光有限公司 | Precise marking device by ultraviolet laser |
| CN103328224A (en) * | 2012-03-22 | 2013-09-25 | 深圳市杰普特电子技术有限公司 | Pulse optical fiber laser marking system |
| WO2013139028A1 (en) * | 2012-03-22 | 2013-09-26 | 深圳市杰普特电子技术有限公司 | Pulse optical fibre laser marking system |
| CN103328224B (en) * | 2012-03-22 | 2015-11-25 | 深圳市杰普特电子技术有限公司 | A kind of pulse optical fiber marking system |
| CN109014584A (en) * | 2018-09-06 | 2018-12-18 | 大族激光科技产业集团股份有限公司 | A kind of micro-processing method of laser ablation paint layer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee after: Suzhou Delphi Laser Co., Ltd. Patentee after: Jiangyin Deli Laser Equipment Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee before: Suzhou Delphi Laser Co., Ltd. Patentee before: Jiangyin Deli Laser Equipment Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120118 Termination date: 20150518 |
|
| EXPY | Termination of patent right or utility model |