CN202103585U - Rectifier bridge with temperature sensor - Google Patents

Rectifier bridge with temperature sensor Download PDF

Info

Publication number
CN202103585U
CN202103585U CN201120193434XU CN201120193434U CN202103585U CN 202103585 U CN202103585 U CN 202103585U CN 201120193434X U CN201120193434X U CN 201120193434XU CN 201120193434 U CN201120193434 U CN 201120193434U CN 202103585 U CN202103585 U CN 202103585U
Authority
CN
China
Prior art keywords
rectifier bridge
temperature sensor
temperature
bridge module
phase rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201120193434XU
Other languages
Chinese (zh)
Inventor
金红旗
李彦栋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midea Group Co Ltd
Original Assignee
Midea Group
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midea Group filed Critical Midea Group
Priority to CN201120193434XU priority Critical patent/CN202103585U/en
Application granted granted Critical
Publication of CN202103585U publication Critical patent/CN202103585U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Thermistors And Varistors (AREA)

Abstract

The utility model discloses a take temperature sensor's rectifier bridge, including temperature sensor (1) and three-phase rectifier bridge module (2), wherein three-phase rectifier bridge module (2) include more than two diode wafers (23), its characterized in that the side of one of them diode wafer (23) on three-phase rectifier bridge module (2) is adorned admittedly in temperature sensing head (12) of temperature sensor (1). The utility model discloses owing to adorn the side of one of them diode wafer on the three-phase rectifier bridge module admittedly with temperature sensor's temperature sensing head, consequently, can direct test rectifier bridge diode wafer temperature, obtain the test temperature that is closer to diode wafer temperature, be favorable to the temperature rise of better control rectifier bridge, avoid rectifier bridge's the ability to flow by force to reduce or even damage, temperature sensor and three-phase rectifier bridge module can carry out the integration encapsulation simultaneously, convenient production assembly, the technology uniformity is good, overall reliability is high.

Description

A kind of rectifier bridge with temperature sensor
Technical field
The utility model relates to a kind of rectifier bridge with temperature sensor, belongs to the improvement technology of supply unit.
Background technology
The supply unit of existing household electrical appliance, its rectifier bridge are that several rectifying tubes are encapsulated in the shell, constitute a complete rectification circuit.As one of important devices of supply unit, the reliability of rectifier bridge concerns the reliability of whole power-supply system.If the diode wafer temperature of rectifier bridge is too high, the conveyance capacity with reducing rectifier bridge causes this rectifier bridge to be damaged, therefore, and must be in certain scope with the temperature rise control of rectifier bridge.
To the problems referred to above; The patent No. is that the utility model of ZL200920172443.3 discloses a kind of improved power rectifier Biodge device; Comprise the rectifier cell that constitutes by end copper seat and silicon; Positive and negative the two poles of the earth of rectifier cell directly are fixed on respectively on the two formation of lots aluminium sheets, and the end face of moulding aluminium sheet is provided with radiating groove.Owing on the end face of molding flat aluminium sheet, be provided with radiating groove; Make the moulding aluminium sheet that is used to dispel the heat to the heat that rectifier cell produced fixed thereon; Heat radiation is even and radiating rate is fast; Guaranteed that rectifier cell can be worked in the rectifier under normal ambient temperature, strengthened the antidamping ability of rectifier cell, prolonged the useful life of rectifier cell.Yet this rectifier bridge operating time, the heat-sinking capability of its radiating groove weakened gradually when longer, can't guarantee temperature rise control with rectifier bridge in certain scope, thereby cause this rectifier bridge to be damaged.Therefore; It is more effective to adopt traditional thermometric mode that rectifier bridge is protected; Yet rectifier bridge temperature test mode is normally in the outside of rectifier bridge, near edge's sensor installation of substrate, and temperature that it is measured and true temperature differ bigger, and the protection real-time is poor; Unreliable, assembling is poor; And temperature measurement accuracy receives the influence of the technology of transducer own, and management and control property is relatively poor.
Summary of the invention
The purpose of the utility model be to consider the problems referred to above and provide a kind of reasonable in design, simple effectively, can more directly test rectifier bridge diode wafer temperature; Better control temperature rise; Avoid the conveyance capacity of rectifier bridge to reduce even damage the convenient rectifier bridge of producing the band temperature sensor of assembling.
The technical scheme of the utility model is: a kind of rectifier bridge with temperature sensor; Comprise temperature sensor and three phase rectifier bridge module; Wherein the three phase rectifier bridge module comprises two above diode wafers, it is characterized in that the temperature-sensitive head of said temperature sensor is packed in the side of one of them the diode wafer on the three phase rectifier bridge module.
Said temperature-sensitive head is fixed between wherein adjacent two the diode wafers on the three phase rectifier bridge module.
Said three phase rectifier bridge module comprises substrate, first ceramic substrate and diode wafer more than one, and wherein first ceramic substrate is packed on the substrate, and diode wafer correspondence is welded on first ceramic substrate.
Said three phase rectifier bridge module also comprises second ceramic substrate, and second ceramic substrate is packed on the substrate and is positioned at the side of one of them first ceramic substrate, and pad is packed on second ceramic substrate.
The temperature-sensitive head of said temperature sensor and wire bonds are on pad.
The temperature-sensitive head of said temperature sensor is a thermistor.
The utility model is owing to the side that the temperature-sensitive head of temperature sensor is packed in one of them the diode wafer on the three phase rectifier bridge module; Therefore, can more directly test rectifier bridge diode wafer temperature, obtain relatively probe temperature near the diode wafer temperature; Help better controlling the temperature rise of rectifier bridge; Avoid the conveyance capacity of rectifier bridge to reduce even damage, simultaneous temperature transducer and three phase rectifier bridge module can carry out integrated encapsulation, and convenient production assembled; Process consistency is good, and global reliability is high.
Description of drawings
Fig. 1 is the outline drawing of the utility model;
Fig. 2 is for taking down the structural representation behind the shell among Fig. 1;
Above-mentioned accompanying drawing has all omitted and the irrelevant parts of utility model.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described further.
Like Fig. 1, shown in 2; The rectifier bridge of present embodiment band temperature sensor; Comprise temperature sensor 1 and three phase rectifier bridge module 2, wherein said three phase rectifier bridge module 2 comprises substrate 21, six first ceramic substrates 22 and diode wafer 23, second ceramic substrate 14, and wherein first ceramic substrate 22, second ceramic substrate 14 are packed in respectively on the substrate 21; Second ceramic substrate 14 is placed in one between two first ceramic substrates 22; Diode wafer 23 correspondences are welded on first ceramic substrate 22, and pad 13 is packed on second ceramic substrate 14, and the temperature-sensitive head 12 and the lead 11 of temperature sensor 1 are welded on the pad 13.The temperature-sensitive head 12 of said temperature sensor 1 is a thermistor.
The utility model can more directly be tested the wafer temperature of rectifier bridge through temperature sensor directly being fixed near the three-phase commutation bridge inside modules diode wafer, and it is fast to have response speed; Highly sensitive; Real-time is good, and probe temperature can effectively carry out the rectifier bridge temperature protection near the true temperature of wafer; Help better controlling the temperature rise of rectifier bridge, avoid the conveyance capacity of rectifier bridge to reduce even damage; Transducer and three phase rectifier bridge module carry out integrated encapsulation simultaneously, and convenient production assembled, and process consistency is good, and global reliability is high.

Claims (6)

1. rectifier bridge with temperature sensor; Comprise temperature sensor (1) and three phase rectifier bridge module (2); Wherein three phase rectifier bridge module (2) comprises two above diode wafers (23), it is characterized in that the temperature-sensitive head (12) of said temperature sensor (1) is packed in the side of one of them the diode wafer (23) on the three phase rectifier bridge module (2).
2. the rectifier bridge of band temperature sensor according to claim 1 is characterized in that said temperature-sensitive head (12) is fixed between wherein adjacent two the diode wafers (23) on the three phase rectifier bridge module (2).
3. the rectifier bridge of band temperature sensor according to claim 1; It is characterized in that said three phase rectifier bridge module (2) comprises substrate (21), first ceramic substrate (22) and diode wafer (23) more than one; Wherein first ceramic substrate (22) is packed on the substrate (21), and diode wafer (23) correspondence is welded on first ceramic substrate (22).
4. the rectifier bridge of band temperature sensor according to claim 3; It is characterized in that said three phase rectifier bridge module (2) also comprises second ceramic substrate (14); Second ceramic substrate (14) is packed in the side that one of them first ceramic substrate was gone up and be positioned to substrate (21), and pad (13) is packed on second ceramic substrate (14).
5. the rectifier bridge of band temperature sensor according to claim 4 is characterized in that the temperature-sensitive head (12) of said temperature sensor (1) and lead (11) are welded on the pad (13).
6. according to the rectifier bridge of each described band temperature sensor of claim 1 to 5, the temperature-sensitive head (12) that it is characterized in that said temperature sensor (1) is a thermistor.
CN201120193434XU 2011-06-10 2011-06-10 Rectifier bridge with temperature sensor Expired - Fee Related CN202103585U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201120193434XU CN202103585U (en) 2011-06-10 2011-06-10 Rectifier bridge with temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201120193434XU CN202103585U (en) 2011-06-10 2011-06-10 Rectifier bridge with temperature sensor

Publications (1)

Publication Number Publication Date
CN202103585U true CN202103585U (en) 2012-01-04

Family

ID=45389583

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201120193434XU Expired - Fee Related CN202103585U (en) 2011-06-10 2011-06-10 Rectifier bridge with temperature sensor

Country Status (1)

Country Link
CN (1) CN202103585U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474422A (en) * 2013-06-26 2013-12-25 绍兴旭昌科技企业有限公司 Single-phase rectifier bridge
CN108270363A (en) * 2016-12-30 2018-07-10 朋程科技股份有限公司 The connection status inspection method of automobile-used rectifier package module and its temperature sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474422A (en) * 2013-06-26 2013-12-25 绍兴旭昌科技企业有限公司 Single-phase rectifier bridge
CN103474422B (en) * 2013-06-26 2016-05-25 浙江明德微电子股份有限公司 A kind of single-phase rectification bridge
CN108270363A (en) * 2016-12-30 2018-07-10 朋程科技股份有限公司 The connection status inspection method of automobile-used rectifier package module and its temperature sensor

Similar Documents

Publication Publication Date Title
CN104009673B (en) A kind of forest environment monitoring sensor electric supply installation
CN103837822A (en) Very large scale integrated circuit junction-to-case thermal resistance test method
CN202103585U (en) Rectifier bridge with temperature sensor
CN104061967A (en) Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof
CN202586720U (en) Novel IGBT module
CN102339811A (en) Circuit board with COB (Chip On Board) packaged power device
WO2014132197A3 (en) Integrated photovoltaic and thermal module (pvt)
CN206806347U (en) A kind of solar photovoltaic assembly device monitored in real time
CN201466598U (en) Photovoltaic component terminal box
CN202600105U (en) Detection device for solar photovoltaic battery
CN201837481U (en) Temperature sensor
CN109904240A (en) Integrated intelligence photovoltaic module structure
CN103531703A (en) Self-temperature-measuring semiconductor chilling plate
CN202796904U (en) Encapsulating structure of quantum effect photoelectric detector and read-out circuit
CN207036280U (en) A kind of novel sensor
CN105606235A (en) Solar overtemperature alarm
CN202956210U (en) Temperature sensor circuit structure based on single wire connection
CN205584065U (en) Solar energy photovoltaic power generation system
CN202425138U (en) Light emitting diode (LED) chip driving system with function of heat management
CN103196624A (en) Wireless pressure transmitter utilizing temperature difference to generate electricity
CN102621475B (en) Solar photovoltaic cell detection device
CN202535285U (en) Rectifier silicon bridge
CN208171318U (en) A kind of thermostatically controlled sensor die block device
CN205178851U (en) Frequency conversion electronic control module subassembly structure
CN105576058B (en) A kind of heat radiating type solar module

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: MIDEA GROUP CO., LTD.

Free format text: FORMER NAME: MEIDI GROUP CO. LTD.

CP03 Change of name, title or address

Address after: 528311 Guangdong, Foshan, Beijiao, the United States, the United States and the United States on the avenue of the United States, the headquarters of the United States building B floor, District, 26-28

Patentee after: MIDEA GROUP Co.,Ltd.

Address before: 528311 Beijiao, Foshan, Shunde District, the town of Guangdong, the United States Avenue, No. 6

Patentee before: Midea Group

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120104

Termination date: 20180610