CN202103413U - Insulated gate bipolar device short circuit self protection circuit - Google Patents
Insulated gate bipolar device short circuit self protection circuit Download PDFInfo
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- CN202103413U CN202103413U CN2011201778479U CN201120177847U CN202103413U CN 202103413 U CN202103413 U CN 202103413U CN 2011201778479 U CN2011201778479 U CN 2011201778479U CN 201120177847 U CN201120177847 U CN 201120177847U CN 202103413 U CN202103413 U CN 202103413U
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Abstract
The present utility model discloses an insulated gate bipolar device short circuit self protection circuit. The circuit comprises a voltage detection circuit, a current detection circuit, a soft shutoff protection circuit, and a drop gate voltage protection circuit. The voltage detection circuit and the current detection circuit are used for detecting insulated gate bipolar device short circuit signals, the soft shutoff protection circuit and the drop gate voltage protection circuit are used for receiving feedback signals, and then taking a two-step shutoff method to protect an insulated gate bipolar device, a voltage detection circuit feedback signal and one path of current detection circuit feedback signal are connected with the drop gate voltage circuit after being insulated by a pair of back-to-back diodes, the mutual interference is avoided, and the other path of the current detection signal is directly fed back to the soft shutoff circuit. The circuit can be realized only by using simple resistors, capacitors, field effect transistors, diodes and zeners, the short circuit protection structure is simple, the response is timely and reliable, the cost is greatly reduced, and the circuit is convenient for integrating.
Description
Technical field
The utility model relates to the short circuit self-shield technical field of insulated gate bipolar device; In particular; Be to be used for the insulated gate bipolar device that inverter, PDP chip for driving use and to avoid the short circuit self-protection circuit design that high-voltage great-current damages, be a kind of insulated gate bipolar device short circuit self-protection circuit about a kind of.
Background technology
Along with people's is to the enhancing day by day of modernized life requirement, and the power integrated circuit performance of products more and more receives publicity, and wherein the ability of power integrated circuit handle high voltages, big electric current more and more becomes one of main performance index.The factor of decision power integrated circuit handle high voltages, big current capacity size is except the circuit structure of power integrated circuit own, design and manufacturing process that circuit adopted, and the current capacity that individual devices of the same area can bear also is a key of weighing power integrated circuit performance and cost.
Insulated gate bipolar device combines the advantage of bipolar transistor and isolated gate FET device; Little and the saturation pressure of driving power reduces, and is fit to very much to be applied to direct voltage and is fields such as 600V and above converter system such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, traction transmission.Yet because the attribute of insulated gate bipolar transistor high-voltage great-current; Cause its drain-source current when short circuit very big; Thereby it can only bear the short circuit current of very short time; The time that can bear short circuit current is relevant with the conducting saturation voltage drop of this device, prolongs along with the increase of saturation conduction pressure drop.Like saturation voltage drop less than the insulated gate bipolar device of 2V duration of short circuit allowed to bear less than 5 μ s, and the insulated gate bipolar device of saturation voltage drop 3V duration of short circuit allowed to bear can reach 15 μ s, can reach during 4～5V more than the 30 μ s.Existence is that the impedance of insulated gate bipolar device also reduces owing to the reduction along with the saturation conduction pressure drop with co-relation, and short circuit current increases simultaneously, and the power consumption during short circuit causes the time of bearing short circuit to reduce rapidly along with square increasing of electric current.For within the time of bearing, turn-offing insulated gate bipolar device, people propose various short circuit self-protection methods in the insulated gate bipolar device drive circuit.
The detection principle that insulated gate bipolar device short circuit self-protection circuit can take has: voltage V between drain electrode and the source electrode when detecting short circuit
DSDrain current I when the principle that increases, detection short circuit
DSThe principle that increases, the principle that grid voltage rises when detecting short circuit.Thereby realize short-circuit protection, fall the soft shutoff of grid voltage and reduce the comprehensive short-circuit protection of operating frequency.In the said method, method simple, that be prone to realize is when detecting short circuit, the voltage V between drain electrode and the source electrode
DSThe realization short circuit is surveyed, and claims to move back saturation again, and what the method adopted is indirect voltage method.Because drain electrode and voltage between source electrodes V during the insulated gate bipolar device overcurrent
DSIncrease and be essentially linear relationship, so the drain-source voltage V during the detection overcurrent
DSAnd compare with setting voltage.The shutoff of comparator output control Driver Circuit also is a good method.But generally adopt insulated gate bipolar device special purpose driver such as EXB841 in this method, cost an arm and a leg, in the production application of middle low power, can make cost increase.
No matter be drain-source voltage detection circuit recited above, or the drain-source current detection circuit, they have a common shortcoming, promptly are the exceeding standard an of parameter value when only surveying short circuit, can only be referred to as overvoltage detection circuit or overcurrent detection circuit.Thereby overvoltage and overcurrent when reasonably combining multiple detection method to detect the insulated gate bipolar device short circuit, but do not make signal between them produce the extremely important Consideration of phase mutual interference when becoming the short-circuit protection circuit design.
Summary of the invention
The problem that the utility model will solve is: insulated gate bipolar device needs short-circuit protection; Existing protected mode existence needs specialized circuitry, costs an arm and a leg shortcomings such as complex process; And the exceeding standard an of parameter value when only surveying short circuit can not be satisfied the demand of short-circuit protection.
The technical scheme of the utility model is: a kind of insulated gate bipolar device short circuit self-protection circuit; Comprise voltage detection circuit, current detection circuit, soft cut-off protection circuit, fall the grid voltage protective circuit and protected insulated gate bipolar device; Said input by the protection insulated gate bipolar device is a drive signal; Output connects the input of voltage detection circuit and current detection circuit respectively; The output of voltage detection circuit connects the input that falls the grid voltage protective circuit through diode D2; Current detection circuit has two-way output, and one the tunnel links to each other with the input of soft cut-off protection circuit, and another road links to each other with the input that falls the grid voltage protective circuit through diode D3; Said diode D2 is connected with diode D3 back-to-back, and soft cut-off protection circuit is connected to by the input of protection insulated gate bipolar device with the output that falls the grid voltage protective circuit.
Said voltage detection circuit is made up of a diode D1, capacitor C 1 and resistance R 1, R2 and R3; Resistance R 1, R2 and R3 series connection; The incoming line of drive signal Vin and resistance R 1, R2, R3 are connected in parallel to GND, and resistance R 3 two ends shunt capacitance C1 are used to adjust the voltage rise time; Diode D1 negative electrode connects by the drain electrode of protection insulated gate bipolar device, and diode D1 anode is connected between resistance R 1 and the resistance R 2; Current detection circuit comprises current sense insulated gate bipolar device, resistance R 4 and resistance R 5; Current sense insulated gate bipolar device grid is the input of current detection circuit; Current sense insulated gate bipolar device source electrode is connected GND through resistance R 4 with resistance R 5; The drain electrode of current sense insulated gate bipolar device meets VDD, the output of difference projected current detection circuit between current sense insulated gate bipolar device source electrode and resistance R 4, the R5; Soft cut-off protection circuit is made up of a FET M1, and FET M1 grid is the input of soft cut-off protection circuit, and drain electrode connects drive signal, and source electrode meets GND; Falling the grid voltage protective circuit is made up of a FET M2 and Zener diode Z1, Z2; FET M2 grid is the input that falls the grid voltage protective circuit, and drain electrode connects Zener diode Z1 anode, and source electrode meets GND; Zener diode Z1 negative electrode connects drive signal; Zener diode Z2 negative electrode connects FET M2 grid, and anode meets GND, clamp M2 grid voltage.
The resistance R 1 of voltage detection circuit, R2, three electric resistance partial pressures of R3; The pressure drop of resistance R 3 is as the unlatching pressure drop of falling the FET M2 of grid voltage protective circuit (4); The resistance ratio of adjustment resistance R 1, R2, R3, the grid voltage protective circuit falls in too early triggering to be used to prevent voltage detection circuit; The resistance R 4 of current detection circuit is set to 2: 1 with the ratio of R5 resistance, is used to adjust the time difference of falling grid voltage protective circuit and the unlatching of soft cut-off protection circuit.
The current sense insulated gate bipolar device of current detection circuit is with consistent by protection insulated gate bipolar device length, and the width ratio is 1: N, the leakage current ratio that makes identical grid voltage and leakage depress the two is 1: N, the value of N is set to 800～1200.
When above-mentioned insulated gate bipolar device short circuit self-protection circuit carries out the short circuit self-shield; The self-protection circuit adopts voltage detection circuit and current detection circuit simultaneously; Diode D2, D3 isolate the signal between voltage detection circuit and the current detection circuit each other back-to-back through two; Make the two feedback signal be connected to the signal receiving end that falls the grid voltage protective circuit together, control is fallen the grid voltage protective circuit and is carried out the short circuit self-shield.
The utility model provides a kind of insulated gate bipolar device short circuit self-protection circuit; Over-current phenomenon avoidance when it promptly can the overvoltage when surveying short circuit can survey short circuit again; And adopt simple device that signal is isolated, finally realize the comprehensive short circuit self-shield of insulated gate bipolar device.
Compared with prior art, the utlity model has following advantage:
(1) realize by the duplicate protection of protection insulated gate bipolar device overvoltage and overcurrent voltage detection function and gallon function being integrated in the same simple circuit, finally realized the overvoltage detection, overcurrent is surveyed, with the short circuit detecting function.Can find out drain-source electric current I when unprotected insulated gate bipolar device reaches stable state after the hard firing short circuit was lost efficacy through Fig. 3
DSCan reach 6 or 7 times load current value, through the short-circuit protection circuit of the utility model, short circuit current is reduced to the half the of former short circuit current, promptly about 3 to 4 times of rated current.
(2) protective circuit is divided into soft shutoff and falls two steps of grid voltage and carry out, and emphasis is implemented the shutoff of two steps to overcurrent and short-circuit condition, and grid voltage is fallen in overvoltage enforcement, has strengthened interference free performance greatly compared with single soft breaking circuit.
(3) technology realizes simply can being integrated on the chip piece through high-low pressure compatible technology and main circuit.Needn't adopt extra special driving chip to block output, practice thrift cost greatly.
(4) voltage detection and gallon adopt two back biased diodes to isolate, and technology realizes simple, and isolation effect is good.
(5) the utility model does not influence the circuit operate as normal, and current sense insulated gate bipolar device (IGBT Sensor) is because area is little, and power consumption is very low.
Description of drawings
Fig. 1 is the utility model short circuit self-protection circuit's a structured flowchart.
Fig. 2 is the utility model short circuit self-protection circuit's physical circuit figure.
Fig. 3 is insulated gate bipolar device voltage, the current waveform of the utility model short circuit self-protection circuit when starting, and the contrast of insulated gate bipolar device voltage and current waveform when not having the short circuit self-protection circuit and protecting.
Embodiment
Like Fig. 1; The utility model comprises voltage detection circuit 1, current detection circuit 2, soft cut-off protection circuit 3, falls grid voltage protective circuit 4 and is protected insulated gate bipolar device 5; Said input by protection insulated gate bipolar device 5 is a drive signal; Output connects the input of voltage detection circuit 1 and current detection circuit 2 respectively, and the output of voltage detection circuit 1 connects the input that falls grid voltage protective circuit 4 through diode D2, and current detection circuit 2 has two-way output; One the tunnel links to each other with the input of soft cut-off protection circuit 3; Another road links to each other with the input that falls grid voltage protective circuit 4 through diode D3, and said diode D2 is connected with diode D3 back-to-back, and soft cut-off protection circuit 3 is connected to by the input of protection insulated gate bipolar device 5 with the output that falls grid voltage protective circuit 4.
Like Fig. 2; Said voltage detection circuit 1 is made up of a diode D1, capacitor C 1 and resistance R 1, R2 and R3; Be used for surveying the rising of being pressed, rise when surpassing a certain preset value when leakage presses by protection insulated gate bipolar device 5 short circuit hourglass, with signal feedback to falling the grid voltage protective circuit.Resistance R 1, R2 and R3 series connection; The incoming line of drive signal Vin and resistance R 1, R2, R3 are connected in parallel to GND; Resistance R 3 two ends shunt capacitance C1; Be used to adjust the voltage rise time, diode D1 negative electrode connects by 5 drain electrodes of protection insulated gate bipolar device, and diode D1 anode is connected between resistance R 1 and the resistance R 2; Current detection circuit 2 comprises current sense insulated gate bipolar device, resistance R 4 and resistance R 5; Current sense insulated gate bipolar device grid is the input of current detection circuit 2; Current sense insulated gate bipolar device source electrode is connected GND through resistance R 4 with resistance R 5; The drain electrode of current sense insulated gate bipolar device meets VDD; The output of difference projected current detection circuit 2 between current sense insulated gate bipolar device source electrode and resistance R 4, the R5; Current sense insulated gate bipolar device IGBT Sensor protects insulated gate bipolar device 5 each electrode with quilt and connects, thereby the two leakage current is proportional, when by protection insulated gate bipolar device 5 experience short-circuit conditions; Current sense insulated gate bipolar device IGBT Sensor gets into short-circuit condition equally, converts the increase of drain current into voltage signal through resistance R 4, R5 and feeds back to soft cut-off protection circuit 3 and fall grid voltage protective circuit 4; Soft cut-off protection circuit 3 is made up of a FET M1; FET M1 grid is the input of soft cut-off protection circuit 3; Drain electrode connects drive signal, and source electrode meets GND, and M1 opens and will be pulled low to 0V by the grid voltage of protection insulated gate bipolar device 5 when feedback signal is drawn high grid voltage; Thoroughly turn-off by protection insulated gate bipolar device 5, realize soft shutoff short-circuit protection function; Fall grid voltage protective circuit 4 and be made up of a FET M2 and Zener diode Z1, Z2, FET M2 grid is the input that falls grid voltage protective circuit 4, and drain electrode connects Zener diode Z1 anode; Source electrode meets GND, and Zener diode Z1 negative electrode connects drive signal, and Zener diode Z2 negative electrode connects FET M2 grid; Anode meets GND; Clamp FET M2 grid voltage, when the feedback signal of voltage detection circuit 1 or current detection circuit 2 was drawn high the grid of FET M2, FET M2 opened; To be pulled low to the clamping voltage 8V of reverse-biased Zener diode Z1 by the grid voltage of protection insulated gate bipolar device 5, realize falling the grid voltage short-circuit protection function.
Below in conjunction with accompanying drawing a step is carried out in the guard method of the utility model and describes, may further comprise the steps:
When being protected insulated gate bipolar device 5 from normal operating conditions entering short-circuit condition; Drain-source voltage increases; The resistance R 2 of voltage detection circuit 1, the last voltage of R3 are elevated, and when the voltage difference on the resistance R 3 surpassed the dead band voltage Vth of the FET M2 that falls grid voltage protective circuit 4, FET M2 opened; To be dragged down by protection insulated gate bipolar device 5 grid voltages; Grid voltage protection falls in realization, therefore adjusts the resistance ratio of resistance R 1, R2, R3 and can adjust the time that resistance R 3 pressure drops reach the dead band voltage Vth of FET M2, prevents that the grid voltage protective circuit from falling in voltage detection circuit 1 too early triggering.
Equally; If when being protected insulated gate bipolar device 5 from normal operating conditions entering short-circuit condition; Drain-source current also can increase; Therefore current sense insulated gate bipolar device IGBT Sensor plays drain-source current and protects insulated gate bipolar device 5 proportional with quilt owing to protect insulated gate bipolar device 5 common sources, grid, leakage with quilt.When short circuit current made the last total pressure head of resistance R 4, R5 of current detection circuit 2 surpass the dead band voltage Vth of the FET M2 that falls grid voltage protective circuit 4, FET M2 opened, and will be dragged down by protection insulated gate bipolar device 5 grid voltages, realized falling the grid voltage protection.
Because overcurrent is bigger to the damage of being protected insulated gate bipolar device 5 than overvoltage; Therefore after falling the startup of grid voltage protective circuit; If continued to increase by protection insulated gate bipolar device 5 drain-source short circuit currents, when short circuit current made pressure reduction on the resistance R 5 of current detection circuit 2 surpass the dead band voltage Vth of FET M1 of soft cut-off protection circuit 3, FET M1 opened; Thoroughly drag down by the grid voltage of protection insulated gate bipolar device 5, turn-off by protection insulated gate bipolar device 5.
Fig. 3 is insulated gate bipolar device voltage, the current waveform of the utility model short circuit self-protection circuit when starting, and the contrast of insulated gate bipolar device voltage and current waveform when not having the short circuit self-protection circuit and protecting, wherein I
DSBe no short circuit self-protection circuit insulated gate bipolar device drain-source current when protecting, I
DLIt is drain-source current when adopting behind the short circuit self-protection circuit short circuit.Can find out that drain-source current significantly reduces after starting short-circuit protection, be reduced to 3 to 4 times from 6 to 7 times of rated current.
Claims (5)
1. insulated gate bipolar device short circuit self-protection circuit; It is characterized in that comprising voltage detection circuit (1), current detection circuit (2), soft cut-off protection circuit (3), fall grid voltage protective circuit (4) and protected insulated gate bipolar device (5); Said input by protection insulated gate bipolar device (5) is a drive signal; Output connects the input of voltage detection circuit (1) and current detection circuit (2) respectively; The output of voltage detection circuit (1) connects the input that falls grid voltage protective circuit (4) through diode D2; Current detection circuit (2) has two-way output, and one the tunnel links to each other with the input of soft cut-off protection circuit (3), and another road links to each other with the input that falls grid voltage protective circuit (4) through diode D3; Said diode D2 is connected with diode D3 back-to-back, and soft cut-off protection circuit (3) is connected to by the input of protection insulated gate bipolar device (5) with the output that falls grid voltage protective circuit (4).
2. a kind of insulated gate bipolar device short circuit self-protection circuit according to claim 1; It is characterized in that said voltage detection circuit (1) is made up of a diode D1, capacitor C 1 and resistance R 1, R2 and R3; Resistance R 1, R2 and R3 series connection; The incoming line of drive signal Vin and resistance R 1, R2, R3 are connected in parallel to GND, and resistance R 3 two ends shunt capacitance C1 are used to adjust the voltage rise time; Diode D1 negative electrode connects by protection insulated gate bipolar device (5) drain electrode, and diode D1 anode is connected between resistance R 1 and the resistance R 2; Current detection circuit (2) comprises current sense insulated gate bipolar device, resistance R 4 and resistance R 5; Current sense insulated gate bipolar device grid is the input of current detection circuit (2); Current sense insulated gate bipolar device source electrode is connected GND through resistance R 4 with resistance R 5; The drain electrode of current sense insulated gate bipolar device meets VDD, the output of difference projected current detection circuit (2) between current sense insulated gate bipolar device source electrode and resistance R 4, the R5; Soft cut-off protection circuit (3) is made up of a FET M1, and FET M1 grid is the input of soft cut-off protection circuit (3), and drain electrode connects drive signal, and source electrode meets GND; Falling grid voltage protective circuit (4) is made up of a FET M2 and Zener diode Z1, Z2; FET M2 grid is for falling the input of grid voltage protective circuit (4), and drain electrode connects Zener diode Z1 anode, and source electrode meets GND; Zener diode Z1 negative electrode connects drive signal; Zener diode Z2 negative electrode connects FET M2 grid, and anode meets GND, clamp M2 grid voltage.
3. a kind of insulated gate bipolar device short circuit self-protection circuit according to claim 1 and 2; Three electric resistance partial pressures of resistance R 1, R2, R3 that it is characterized in that voltage detection circuit (1), the pressure drop of resistance R 3 is as the unlatching pressure drop of falling the FET M2 of grid voltage protective circuit (4); The resistance R 4 of current detection circuit (2) is set to 2: 1 with the ratio of R5 resistance.
4. a kind of insulated gate bipolar device short circuit self-protection circuit according to claim 1 and 2; The current sense insulated gate bipolar device that it is characterized in that current detection circuit (2) is with consistent by protection insulated gate bipolar device (5) length; The width ratio is 1: N; The leakage current ratio that makes identical grid voltage and leakage depress the two is 1: N, the value of N is set to 800～1200.
5. a kind of insulated gate bipolar device short circuit self-protection circuit according to claim 3; The current sense insulated gate bipolar device that it is characterized in that current detection circuit (2) is with consistent by protection insulated gate bipolar device (5) length; The width ratio is 1: N; The leakage current ratio that makes identical grid voltage and leakage depress the two is 1: N, the value of N is set to 800～1200.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201778479U CN202103413U (en) | 2011-05-30 | 2011-05-30 | Insulated gate bipolar device short circuit self protection circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201778479U CN202103413U (en) | 2011-05-30 | 2011-05-30 | Insulated gate bipolar device short circuit self protection circuit |
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| CN202103413U true CN202103413U (en) | 2012-01-04 |
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| CN2011201778479U Expired - Fee Related CN202103413U (en) | 2011-05-30 | 2011-05-30 | Insulated gate bipolar device short circuit self protection circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201661A (en) * | 2011-05-30 | 2011-09-28 | 东南大学 | Short circuit self-protection circuit and method for insulated gate bipolar device |
| CN108710076A (en) * | 2018-05-24 | 2018-10-26 | 南京南大光电工程研究院有限公司 | Dynamic conduction impedance automation extraction circuit based on AlGaN/GaN HEMT devices and automation extracting method |
| CN109618440A (en) * | 2019-01-30 | 2019-04-12 | 九阳股份有限公司 | A kind of electromagnetic heating control circuit and control method |
| CN111193395A (en) * | 2018-11-14 | 2020-05-22 | 纳维达斯半导体公司 | Resonant converter control based on zero current detection |
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2011
- 2011-05-30 CN CN2011201778479U patent/CN202103413U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201661A (en) * | 2011-05-30 | 2011-09-28 | 东南大学 | Short circuit self-protection circuit and method for insulated gate bipolar device |
| CN102201661B (en) * | 2011-05-30 | 2014-06-25 | 东南大学 | Short circuit self-protection circuit and method for insulated gate bipolar device |
| CN108710076A (en) * | 2018-05-24 | 2018-10-26 | 南京南大光电工程研究院有限公司 | Dynamic conduction impedance automation extraction circuit based on AlGaN/GaN HEMT devices and automation extracting method |
| CN108710076B (en) * | 2018-05-24 | 2020-06-30 | 南京南大光电工程研究院有限公司 | Dynamic on-resistance automatic extraction circuit and automatic extraction method |
| CN111193395A (en) * | 2018-11-14 | 2020-05-22 | 纳维达斯半导体公司 | Resonant converter control based on zero current detection |
| US11594970B2 (en) | 2018-11-14 | 2023-02-28 | Navitas Semiconductor Limited | Overcurrent protection based on zero current detection |
| CN111193395B (en) * | 2018-11-14 | 2023-12-12 | 纳维达斯半导体有限公司 | Resonant converter control based on zero current detection |
| CN109618440A (en) * | 2019-01-30 | 2019-04-12 | 九阳股份有限公司 | A kind of electromagnetic heating control circuit and control method |
| CN109618440B (en) * | 2019-01-30 | 2021-12-03 | 九阳股份有限公司 | Electromagnetic heating control circuit and control method |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120104 Termination date: 20120530 |