CN202096901U - Device for mixing gases with different flow rates - Google Patents
Device for mixing gases with different flow rates Download PDFInfo
- Publication number
- CN202096901U CN202096901U CN2011201484846U CN201120148484U CN202096901U CN 202096901 U CN202096901 U CN 202096901U CN 2011201484846 U CN2011201484846 U CN 2011201484846U CN 201120148484 U CN201120148484 U CN 201120148484U CN 202096901 U CN202096901 U CN 202096901U
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- gas
- speed
- inlet channel
- mixing
- channel
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Abstract
The utility model discloses a device for mixing gases with different flow rates, which comprises a high-speed gas inlet channel, a low-speed gas inlet channel, a gas mixing channel and a flow guide block. The high-speed gas inlet channel and the low-speed gas inlet channel are respectively connected with the gas mixing channel, high-speed gas and low-speed gas are gathered into the gas mixing channel, the flow guide block consists of a flow guide groove, a first end of the flow guide groove is disposed in the low-speed gas inlet channel, and a second end of the flow guide groove is arranged in the gas mixing channel. The device for mixing gases with different flow rates can reduce the gas dispersing distance, shortens the mixing distance of prepared gas and technical gas, increases mixing speed, remarkably improves mixing quality, greatly enhances quality of mixed etching gas, and further improves etching quality of circuit boards.
Description
Technical field
The utility model relates to a kind of device that mixes gas with various, particularly a kind of device that mixes different in flow rate gas.
Background technology
In semicon industry; The used etching gas of etching circuit board generally is through modulation gas and process gas mix gained; But because these two kinds of gas flow rate differences, air pressure is also just different, when getting into the device that mixes different in flow rate gas at the same time; The process gas that flow velocity is high is known from experience the side that the modulation gas that flow velocity is slow is squeezed in the gas hybrid channel all the time; Make two kinds of gases mix inadequately evenly, abundant inadequately, cause the concentration and the quality dissatisfaction of etching gas, thereby influence is to the etching effect of circuit board.
The utility model content
The purpose of the utility model provides a kind of device that mixes different in flow rate gas; Can make process gas and the slow modulation gas of flow velocity that flow velocity is high mix reduced distances; Mixing velocity is accelerated, and mixes more fully, even, has improved the quality of the etching gas that mixes greatly; Its etching power is strengthened greatly, and etching effect obviously improves.
In order to realize above purpose, the utility model is realized through following technical scheme:
The device that mixes different in flow rate gas; Comprise high-speed gas inlet channel, gas inlet channel and gas hybrid channel at a slow speed; Described high-speed gas inlet channel is connected with the gas hybrid channel respectively with gas inlet channel at a slow speed; High-speed gas and at a slow speed gas be pooled in the gas hybrid channel, also comprise baffle, described baffle comprises guiding gutter; First end of described guiding gutter is located at a slow speed in the inlet channel, and second end of guiding gutter is located in the gas hybrid channel.
Second end of described guiding gutter is provided with a plurality of gas spouts.
Described gas spout comprises that the drainage boss makes gas vent be arranged in the gas hybrid channel.
Described a plurality of drainage boss, described drainage boss is arranged in the gas hybrid channel.
Said baffle also comprises two airtight boss, and described two airtight boss are complementary with gas passage inner wall shape at a slow speed.
Comprise airtight elastomeric pad between described two airtight boss and intercept the fast gas passage and the UNICOM of gas passage at a slow speed.
High-speed gas flow in the described high-speed gas inlet channel is greater than 4 times of the gas flow at a slow speed in the gas inlet channel at a slow speed.
High-speed gas flow in the described high-speed gas inlet channel is greater than 10 times of the gas flow at a slow speed in the gas inlet channel at a slow speed.
The device of the utility model mixing different in flow rate gas compared with prior art has the following advantages:
The utility model has shortened the distance of gas diffusion owing to adopted baffle, the guiding gutter on this baffle can guide the slow modulation gas of flow velocity directly to get into the gas hybrid channel through the gas spout on the guiding gutter;
Again because baffle is provided with airtight boss; The high process gas of flow velocity is known from experience by airtight boss and is stopped and change the original flow direction; Thereby the direction along the gas hybrid channel gets into gas hybrid channel and modulation mixed gases; Thereby the flow direction of two kinds of gases is consistent, has solved the problem of process gas extruding modulation gas at gas hybrid channel sidewall.
Therefore, the mixing velocity of two kinds of gases improves greatly and mixes more fully, evenly, and has improved the quality of etching gas, thereby has improved the etching quality to circuit board.
Description of drawings
Fig. 1 mixes the perspective view of the device of different in flow rate gas for the utility model;
Fig. 2 is the isometric front view of the baffle of the device of the utility model mixing different in flow rate gas;
Fig. 3 is the rear isometric view of the baffle of the device of the utility model mixing different in flow rate gas.
The specific embodiment
Below in conjunction with embodiment the technical scheme of the utility model is done further explanation.
Like Fig. 1 ~ shown in Figure 3; The device that mixes different in flow rate gas comprises high-speed gas inlet channel 1, gas inlet channel 2 and gas hybrid channel 3 at a slow speed, and described high-speed gas inlet channel 1 is connected with gas hybrid channel 3 respectively with gas inlet channel 2 at a slow speed; High-speed gas and at a slow speed gas be pooled in the gas hybrid channel 3; The utility model also comprises baffle 4, and this baffle 4 is provided with guiding gutter 43, and first end of this guiding gutter 43 is located at a slow speed in the inlet channel; Its second end is located in the gas hybrid channel 3 and is provided with a plurality of gas spouts 431; This gas spout 431 also comprises drainage boss 4311, and this drainage boss 4311 is arranged in the gas hybrid channel 3, makes the gas vent of gas spout 431 be arranged in gas hybrid channel 3; Shorten the distance of flow of gas in gas hybrid channel 3 at a slow speed, thereby shortened the time and the distance of high-speed gas and gas mixing at a slow speed.
Wherein, also be provided with two airtight boss 41,42 on the baffle 4; These two airtight boss 41,42 are complementary with gas passage inner wall shape at a slow speed, and; The pit that constitutes between two airtight boss 41,42 is also inserted airtight elastomeric pad, in the present embodiment; The O V-shaped ring that adopts elastomeric material to process can intercept the high-speed gas inlet channel 1 and the UNICOM of gas inlet channel 2 at a slow speed, prevent fast gas and at a slow speed gas in the undesirable mixing of generation of 3 porch, gas hybrid channel.In the present embodiment; High-speed gas is a process gas; Gas is modulation gas at a slow speed, and this modulation gas flow has only 1/10 even 1/100 of process gas flow usually, and is obvious more in the effect of the big more application scenario the utility model of gas flow difference; In the present embodiment; The flow of the gas at a slow speed through a plurality of gas spouts 431 just can obviously improve the gas mixed effect less than 1/4 of the fast gas flow that flows through gas spout 431, in littler pipeline space, realizes the even mixing of gas, improves the quality that gas mixes.
In sum; The device of above-mentioned mixing different in flow rate gas has reduced the distance of gas diffusion, makes the reduced distances of mixing of modulation gas and process gas; Mixing velocity is accelerated; Mixing quality significantly improves, and the quality of mixed etching gas promotes greatly, and then has improved the etching quality to circuit board.
Wherein gas spout 431 also can be arranged on the diverse location of guiding gutter 43, spreads in the high velocity gas stream at a slow speed that the gas flow guiding structure just belongs to the utility model limited range as long as can be implemented in.
Although the content of the utility model has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to the restriction to the utility model.After those skilled in the art have read foregoing, for the multiple modification of the utility model with to substitute all will be conspicuous.Therefore, the protection domain of the utility model should be limited appended claim.
Claims (8)
1. the device that mixes different in flow rate gas; Comprise high-speed gas inlet channel (1), gas inlet channel (2) and gas hybrid channel (3) at a slow speed; Described high-speed gas inlet channel (1) is connected with gas hybrid channel (3) respectively with gas inlet channel (2) at a slow speed, high-speed gas and at a slow speed gas be pooled in the gas hybrid channel (3), it is characterized in that; Also comprise baffle (4), described baffle (4) comprises guiding gutter (43); First end of described guiding gutter (43) is located at a slow speed in the inlet channel, and second end of guiding gutter (43) is located in the gas hybrid channel (3).
2. the device of mixing different in flow rate gas according to claim 1 is characterized in that, second end of described guiding gutter (43) is provided with a plurality of gas spouts (431).
3. the device of mixing different in flow rate gas according to claim 2 is characterized in that, described gas spout (431) comprises that drainage boss (4311) makes gas vent be arranged in gas hybrid channel (3).
4. the device of mixing different in flow rate gas according to claim 3 is characterized in that, described a plurality of drainage boss (4311), and described drainage boss (4311) is arranged in the gas hybrid channel (3).
5. the device of mixing different in flow rate gas according to claim 1 is characterized in that, said baffle (4) also comprises two airtight boss (41,42), and described two airtight boss (41,42) are complementary with gas passage inner wall shape at a slow speed.
6. the device of mixing different in flow rate gas according to claim 5 is characterized in that, comprises airtight elastomeric pad between described two airtight boss (41,42) and intercepts the fast gas passage and the UNICOM of gas passage at a slow speed.
7. the device of mixing different in flow rate gas according to claim 1 is characterized in that, the high-speed gas flow in the described high-speed gas inlet channel (1) is greater than 4 times of the gas flow at a slow speed in the gas inlet channel (2) at a slow speed.
8. the device of mixing different in flow rate gas according to claim 1 is characterized in that, the high-speed gas flow in the described high-speed gas inlet channel (1) is greater than 10 times of the gas flow at a slow speed in the gas inlet channel (2) at a slow speed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201484846U CN202096901U (en) | 2011-05-11 | 2011-05-11 | Device for mixing gases with different flow rates |
| TW100222446U TWM433630U (en) | 2011-05-11 | 2011-11-28 | Device for mixing gas with different flow rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201484846U CN202096901U (en) | 2011-05-11 | 2011-05-11 | Device for mixing gases with different flow rates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202096901U true CN202096901U (en) | 2012-01-04 |
Family
ID=45382936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201484846U Expired - Lifetime CN202096901U (en) | 2011-05-11 | 2011-05-11 | Device for mixing gases with different flow rates |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN202096901U (en) |
| TW (1) | TWM433630U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114768578B (en) * | 2022-05-20 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Gas mixing device and semiconductor process equipment |
-
2011
- 2011-05-11 CN CN2011201484846U patent/CN202096901U/en not_active Expired - Lifetime
- 2011-11-28 TW TW100222446U patent/TWM433630U/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWM433630U (en) | 2012-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Device for mixing gases with different flow rates Effective date of registration: 20150202 Granted publication date: 20120104 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20120104 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120104 |
|
| CX01 | Expiry of patent term |