CN202066953U - Magnetic sensor - Google Patents
Magnetic sensor Download PDFInfo
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- CN202066953U CN202066953U CN2011201767008U CN201120176700U CN202066953U CN 202066953 U CN202066953 U CN 202066953U CN 2011201767008 U CN2011201767008 U CN 2011201767008U CN 201120176700 U CN201120176700 U CN 201120176700U CN 202066953 U CN202066953 U CN 202066953U
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Abstract
The utility model discloses a magnetic sensor. The magnetic sensor includes a constant flow source exciting circuit used to provide stable alternating sine exciting current for a LaMnOx film; a preamplification circuit used for first amplification of a high frequency voltage signal on two ends of the LaMnOx film; a peak value detection circuit used to obtain a low frequency voltage signal from the amplified high frequency voltage signal; a low-pass filter circuit used to smooth and filter the low frequency voltage signal, so as to obtain a direct voltage signal; a voltage signal provided for a differential amplifier and equivalent to the direct voltage signal on the two ends of the LaMnOx film when an external magnetic field is zero; and the differential amplifier for differential operation and amplification of the direct voltage signal on the two ends of the LaMnOx film and the low-pass voltage signal of a reference voltage source. In the utility model, not only the merits of a traditional magnetic sensor are inherited, but also the magnetic sensor is enabled to detect weak directive magnetic fields.
Description
Technical field
The present invention relates to the Magnetic Sensor field, specifically, is a kind of Magnetic Sensor that D.C. magnetic field is had certain susceptibility based on the giant magnetoresistance effect principle.
Background technology
Magnetic Sensor is being born important role always in modern technologies, and is widely used in the engineering industrial circle, as biological magnetic measurement, earth-magnetic navigation and earth exploration etc.Be used for realizing that the principle of Magnetic Sensor has a lot, for example Hall effect, magnetoresistance, giant magnetoresistance effect, giant magnetoresistance effect, nuclear precession, superconducting quantum interference device (SQUID), magnetoelastic effect etc.
Existing fluxgate sensor, form by the thin magnetic core of high-performance, excitation winding, induction winding and sensitive element, the sensitivity that increase umber of turn commonly used improves sensor when material is certain has caused the volume increase of sensor and frequency response reduction, noise to increase.Sensitivity can reach 8 * 10
-5A/m, but because stray capacitance, magnetic core winding can make the response speed of sensor low.
The Hall element temperature stability is poor, and weak magnetic sensitivity is unfavorable for small current measurement for a short time, and contains poly-magnetic magnetic core with the current sensor that Hall element is made, cause sensor bulk increase (Bao Binghao. electrical measurement and instrument .2000,37 (412) 24-26); Though Hall element and mistor element are all made microdevice, their magnetic flux verification and measurement ratio approximately is 0.1%Oe, and the maximum operating temperature of Hall element is at 70 ℃.
Giant magnetoresistance (GMR) element is the giant magnetoresistance effect that utilizes magnetic material, and this effect is the phenomenon of the resistance generation great change of material under the situation of externally-applied magnetic field, and its sensitivity can improve an order of magnitude, reaches 1%/Oe.But the sensor with the GMR material is still not very good, usually only just can see with adding under the high-intensity magnetic field (approximately 10kOe) at low temperature, and only limit to the very not significant metallic multilayer membrane material of GMR effect again, also has problems such as magnetic hysteresis, temperature instability.These have all limited its application in the magnetoelectricity fields of measurement.
The utility model content
In order to solve the weak point of existing Magnetic Sensor, it is a kind of based on giant magnetoresistance effect principle, the low-cost Magnetic Sensor for preparing sensitive element, D.C. magnetic field is had certain susceptibility of employing sol-gal process that the utility model provides.
A kind of Magnetic Sensor based on giant magnetoresistance effect of the utility model comprises constant current source exciting circuit, pre-amplification circuit, peak-detector circuit, low-pass filter circuit, differential amplifier, reference voltage source and sensitive element.
Wherein, driving voltage is passed into the constant current source exciting circuit makes the constant current source exciting circuit provide stable AC sine exciting current for sensitive element, make the sensitive element two ends produce HF voltage, the HF voltage at sensitive element two ends is carried out one-level by pre-amplification circuit and is amplified, HF voltage after the amplification detects by peak-detector circuit, obtains low-frequency voltage; Low-frequency voltage enters into low-pass filter circuit and carries out smothing filtering, obtains DC voltage; D. c. voltage signal enters into differential amplifier; When reference voltage source is zero to the differential amplifier feeding with the external magnetic field, the voltage signal that the d. c. voltage signal at sensitive element two ends equates; The voltage signal that differential amplifier provides the d. c. voltage signal and the reference voltage source at sensitive element two ends carries out calculus of differences and amplifies, and obtains sensitive element because the d. c. voltage signal of the resistance correspondence that the external magnetic place changes.
Advantage of the present utility model is:
1, the utility model Magnetic Sensor utilizes giant magnetoresistance effect to make, and makes Magnetic Sensor can survey faint D.C. magnetic field;
2, the utility model Magnetic Sensor is highly sensitive, good stability, low in energy consumption, response speed is fast, and low cost of manufacture;
3, the utility model Magnetic Sensor adopts the LaMnOx film as sensitive element, and it is microminiaturized to help adopting MEMS technology to realize.
Description of drawings
Fig. 1 is the utility model magnetic sensor arrangement block diagram;
Fig. 2 is the output voltage curve that the utility model Magnetic Sensor changes with extraneous D.C. magnetic field.
Among the figure:
1, constant current source exciting circuit 2, pre-amplification circuit 3, peak-detector circuit 4, low-pass filter circuit
5, differential amplifier 6, reference voltage source 7, LaMnOx film
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
A kind of Magnetic Sensor of the utility model based on giant magnetoresistance effect, comprise constant current source exciting circuit 1, pre-amplification circuit 2, peak-detector circuit 3, low-pass filter circuit 4, differential amplifier 5, reference voltage source 6 and LaMnOx film 7, as shown in Figure 1, the current output terminal of constant current source exciting circuit 1 links to each other with LaMnOx film 7, LaMnOx film 7 ground connection, LaMnOx film 7 two ends link to each other with pre-amplification circuit 2 input ends.The output terminal of pre-amplification circuit 2 links to each other with the input end of peak-detector circuit 3; The output terminal of peak-detector circuit 3 links to each other with low-pass filter circuit 4, and the output terminal of low-pass filter circuit 4 links to each other with the input end of differential amplifier 5; The output terminal of reference voltage source 6 links to each other with the input end of differential amplifier 5.
When the external magnetic field changes, the impedance meeting of LaMnOx film 7 changes thereupon, therefore to constant current source exciting circuit 1 input stimulus voltage signal Vi, make constant current source exciting circuit 1 for LaMnOx film 7 provides stable current excitation, make the voltage at LaMnOx film 7 two ends can reflect LaMnOx film 7 impedance variation.Constant current source exciting circuit 1 also sends to pre-amplification circuit 2 with the HF voltage at LaMnOx film 7 two ends.LaMnOx film 7 adopts sol-gal process and uses the nickel metal alloy to be made as substrate in the utility model.
Provide different amplitude driving voltage signal Vi to the constant current source exciting circuit, and then changed exciting current size by LaMnOx film 7.Find that by the voltage waveform of measuring LaMnOx film 7 two ends electric current is too small or cross big city and make voltage wave shape distortion, so the normal waveform work of the utility model exciting current scope is 11mA-20mA.
When the output weak voltage signal at LaMnOx film 7 two ends (voltage peak is at a few to tens of millivolts), can't carry out detection to the voltage signal at LaMnOx film 7 two ends; And the weak voltage signal of output causes the impedance of LaMnOx film 7, can't mate with subsequent conditioning circuit.Therefore by prime amplifier the high-frequency voltage signal at LaMnOx film 7 two ends is carried out being passed into peak-detector circuit 3 after one-level amplifies.
Peak-detector circuit 3 is used for the low-frequency voltage signal of superposition on the high-frequency voltage signal at LaMnOx film 7 two ends detected, and obtains the low-frequency voltage signal at LaMnOx film 7 two ends, and will be passed into low-pass filter circuit 4.
Because peak-detector circuit 3 time constants are limited, and the interference of external magnetic field causes some high-frequency voltage signals not to be attenuated fully, and therefore still mixing in the low-frequency voltage signal by LaMnOx film 7 two ends that obtain behind the above-mentioned peak-detector circuit 3 has some high-frequency voltage signals.Low-frequency voltage signal by 4 pairs of LaMnOx film 7 two ends of low-pass filter circuit carries out smothing filtering, the high-frequency voltage signal complete attenuation that exists in the low-frequency voltage signal is fallen, finally obtain the d. c. voltage signal at LaMnOx film 7 two ends, and d. c. voltage signal is passed in the differential amplifier 5.
When the external magnetic field is zero, because the existence of the driving voltage signal Vi of input, so the output signal of Magnetic Sensor is non-vanishing, causes determining whether the outside has magnetic field.Therefore provide a reference voltage signal by reference voltage source 6 to differential amplifier 5, by regulating the size of reference voltage signal, the d. c. voltage signal equal and opposite in direction that feeds to differential amplifier 5 by low-pass filter circuit 4 when making reference voltage signal and magnetic field be zero.
Through experiment, the output voltage curve that the utility model Magnetic Sensor changes with extraneous D.C. magnetic field, as shown in Figure 2, visible the utility model has certain sensitivity to magnetic field.
Claims (4)
1. the Magnetic Sensor based on giant magnetoresistance effect is characterized in that: comprise
Be used to the LaMnOx film that the constant current source exciting circuit of stable AC sine exciting current is provided;
Be used for LaMnOx film two ends high-frequency voltage signal is carried out the pre-amplification circuit that one-level is amplified;
The peak-detector circuit that obtains low-frequency voltage signal of the high-frequency voltage signal after being used for amplifying from one-level;
Be used for low-frequency voltage signal is carried out the low-pass filter circuit of smothing filtering;
Be used for the differential amplifier that voltage signal that d. c. voltage signal and reference voltage source with LaMnOx film two ends provide carries out calculus of differences and amplify;
Be used to differential amplifier that the reference voltage source of a reference voltage signal is provided;
The d. c. voltage signal at LaMnOx film two ends equated when reference voltage signal was zero with the external magnetic field.
2. a kind of according to claim 1 Magnetic Sensor based on giant magnetoresistance effect is characterized in that: described LaMnOx film adopts sol-gal process to make.
3. a kind of according to claim 1 Magnetic Sensor based on giant magnetoresistance effect is characterized in that: described LaMnOx film uses the nickel metal alloy as substrate.
4. a kind of according to claim 1 Magnetic Sensor based on giant magnetoresistance effect is characterized in that: the AC sine exciting current that described constant current source exciting circuit provides for the LaMnOx film is 11mA-20mA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201767008U CN202066953U (en) | 2011-05-30 | 2011-05-30 | Magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201767008U CN202066953U (en) | 2011-05-30 | 2011-05-30 | Magnetic sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202066953U true CN202066953U (en) | 2011-12-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011201767008U Expired - Fee Related CN202066953U (en) | 2011-05-30 | 2011-05-30 | Magnetic sensor |
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| CN (1) | CN202066953U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103885006A (en) * | 2014-03-31 | 2014-06-25 | 哈尔滨工业大学深圳研究生院 | Alternating current magnetic field sensor with measuring frequency scanning function |
| CN104280698A (en) * | 2013-07-09 | 2015-01-14 | 北京嘉岳同乐极电子有限公司 | Magnetic field measurement device |
| CN104508501A (en) * | 2012-05-11 | 2015-04-08 | 公立大学法人大阪市立大学 | Power factor measurement device |
| CN104635185A (en) * | 2015-02-09 | 2015-05-20 | 哈尔滨工业大学深圳研究生院 | Annular alternating-current magnetic field sensor |
| CN105259521A (en) * | 2015-11-27 | 2016-01-20 | 株洲壹星科技股份有限公司 | Giant magneto-resistance sensor differential drive and magnetic field bias circuit and bias method |
| CN112424618A (en) * | 2018-07-17 | 2021-02-26 | 日置电机株式会社 | Current sensor |
-
2011
- 2011-05-30 CN CN2011201767008U patent/CN202066953U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104508501A (en) * | 2012-05-11 | 2015-04-08 | 公立大学法人大阪市立大学 | Power factor measurement device |
| US10120001B2 (en) | 2012-05-11 | 2018-11-06 | Osaka City University | Power factor measurement device |
| CN104280698A (en) * | 2013-07-09 | 2015-01-14 | 北京嘉岳同乐极电子有限公司 | Magnetic field measurement device |
| CN104280698B (en) * | 2013-07-09 | 2018-09-28 | 北京嘉岳同乐极电子有限公司 | Magnetic field measuring device |
| CN103885006A (en) * | 2014-03-31 | 2014-06-25 | 哈尔滨工业大学深圳研究生院 | Alternating current magnetic field sensor with measuring frequency scanning function |
| CN104635185A (en) * | 2015-02-09 | 2015-05-20 | 哈尔滨工业大学深圳研究生院 | Annular alternating-current magnetic field sensor |
| CN105259521A (en) * | 2015-11-27 | 2016-01-20 | 株洲壹星科技股份有限公司 | Giant magneto-resistance sensor differential drive and magnetic field bias circuit and bias method |
| CN112424618A (en) * | 2018-07-17 | 2021-02-26 | 日置电机株式会社 | Current sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170811 Address after: 100094, Beijing Yongfeng Haidian District industrial base, No. 7 Ze Ze North Road Hospital Patentee after: Beijing Ding century superconductor technology Co., Ltd. Address before: 100206 Beijing Haidian District Shahe second top Factory No. 4 building, 3 floor Patentee before: Beijing Dingchen Super Conductor Technology Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111207 Termination date: 20200530 |
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| CF01 | Termination of patent right due to non-payment of annual fee |