CN201970016U - Laser marking insulation equipment for crystalline silicon solar battery - Google Patents
Laser marking insulation equipment for crystalline silicon solar battery Download PDFInfo
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- CN201970016U CN201970016U CN 201120009503 CN201120009503U CN201970016U CN 201970016 U CN201970016 U CN 201970016U CN 201120009503 CN201120009503 CN 201120009503 CN 201120009503 U CN201120009503 U CN 201120009503U CN 201970016 U CN201970016 U CN 201970016U
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Abstract
The utility model relates to laser marking insulation equipment for crystalline silicon solar battery. Beam expanding lens are arranged at the laser output and scanning vibration lens are arranged at the output of the beam expanding lens. The scanning vibration lens comprises a CCD camera, an angle lens, a vibration lens and a scanning field lens. The angle lens is connected with the output of the beam expanding lens. The CCD camera is disposed on the vibration lens. The output of the angle lens is connected to the vibration lens and the output of the vibration lens is connected to the scanning field lens. The scanning field lens right faces the processing platform, which is arranged on the X-axis straight-line rails. The X-axis straight-line rails are installed on the Y-axis straight-line rails, wherein the Y-axis straight-line rails are perpendicular to the X-axis straight-line rails. The scanning vibration lens with the co-axial image module group achieves high-speed scanning marking and real-time monitoring for images. The utility model has the advantages of: high precision, a small heat effect area, good insulation and so on.
Description
Technical field
The utility model relates to a kind of laser scribing equipment, relates in particular to the laser scribing insulator arrangement that is used for crystal silicon solar batteries, belongs to laser accurate processing and manufacturing technical field.
Background technology
Because the raising and the oil shortage of environmental consciousness are serious day by day, how effectively to utilize inexhaustible, nexhaustible solar energy in recent years, reduce the solar cell power generation cost, become common research and development target gradually.
The solar cell principle mainly is to be matrix with the Semiconducting Silicon Materials, utilizes diffusion technique to mix impurity in silicon crystal: when mixing boron impurity, will have a hole in the silicon crystal, form n type semiconductor; Equally, after mixing phosphorus atoms, have an electronics in the silicon crystal, form p type semiconductor, p type semiconductor and n type semiconductor are in conjunction with forming the pn knot, when solar light irradiation, move toward p type district in the semi-conductive hole of n type in the pn knot, and the electronics in p type district moves toward n type district, thereby form the electric current of n type district to p type district, form electrical potential difference in the pn knot, this has just formed power supply.
In the crystal silicon solar batteries production technology link, in the front of crystal silicon battery printing wire silver electrode, in the back up aluminium face and the silver electrode of crystal silicon battery.And only be the following hundreds of nanometer in surface in the territory, positive n polar region that inside battery forms the pn knot, positive territory, n polar region can directly produce short circuit current by the edge and the backplate of battery sheet, and therefore the production technology link at crystal silicon solar batteries need insulate in the etching of the edge of battery sheet.Feasible edge etch process comprises plasma etching, chemical etching and laser scribing insulation now.
The laser scribing insulation is a kind of contactless etching insulating method, compares with chemical etching with plasma etching, can not produce the discharging of fluoride gas, strong acid and strong base solution, belongs to energy saving and environment friendly processing technology.Laser scribing insulating process does not in addition have the consumption of consumptive materials such as chemicals, and production cost is little.
Summary of the invention
The purpose of this utility model is to overcome the deficiency that prior art exists, and a kind of laser scribing insulator arrangement of crystal silicon solar batteries is provided.
The purpose of this utility model is achieved through the following technical solutions:
The laser scribing insulator arrangement of crystal silicon solar batteries, characteristics are: the output of laser instrument is provided with beam expanding lens, the output of beam expanding lens is furnished with the scanning galvanometer device, described scanning galvanometer device comprises the CCD camera lens, the corner eyeglass, galvanometer head and field mirror, the corner eyeglass is connected mutually with the output of beam expanding lens, the CCD camera lens is installed on the corner eyeglass, the output of corner eyeglass connects the galvanometer head, the output of galvanometer head connects field mirror, field mirror is right against processing platform, processing platform is installed on the X-axis line slideway, and the X-axis line slideway is installed on the Y-axis line slideway, and Y-axis line slideway and X-axis line slideway are perpendicular.
Further, the laser scribing insulator arrangement of above-mentioned crystal silicon solar batteries, wherein, described laser instrument is that output wavelength is the pumped at end face of semiconductor laser instrument of infrared 1064nm or visible light 532nm or ultraviolet light 355nm.
Substantive distinguishing features and obvious improvement that technical solutions of the utility model are outstanding are mainly reflected in:
The utility model laser scribing insulator arrangement has characteristics such as precision height, fuel factor zone are little, good insulating.Adopt the high-performance semiconductor end-pumped laser to guarantee the quality and the efficient of laser scribing.The scanning galvanometer structure that possesses the coaxial image module realizes high-velocity scanning line and image real time monitoring function.
Description of drawings
Below in conjunction with accompanying drawing technical solutions of the utility model are described further:
Fig. 1: the light channel structure schematic diagram of the utility model equipment;
Fig. 2: the structural representation of scanning galvanometer device;
Fig. 3: the structural representation of processing platform.
The implication of each Reference numeral sees the following form among the figure:
The specific embodiment
The crystal silicon solar batteries insulator arrangement that the utility model relates to adopts the high power semiconductor pump light source to form the wide insulation tank in the 20um left and right sides in crystal silicon battery edge focusing scanning back, reaches the purpose of territory, crystal silicon solar batteries surface n polar region and back electrode insulation.
As shown in Figure 1, the laser scribing insulator arrangement of crystal silicon solar batteries mainly comprises laser instrument, optical system, processing platform, control system and image system.Laser instrument 1 is that output wavelength is the pumped at end face of semiconductor laser instrument of infrared 1064nm or visible light 532nm or ultraviolet light 355nm, the output of laser instrument 1 is provided with beam expanding lens 2, the output of beam expanding lens 2 is furnished with scanning galvanometer device 3, as shown in Figure 2, scanning galvanometer device 3 comprises CCD camera lens 7, corner eyeglass 8, galvanometer head 9 and field mirror 10, corner eyeglass 8 is connected mutually with the output of beam expanding lens 2, CCD camera lens 7 is installed on the corner eyeglass 8, the output of corner eyeglass 8 connects galvanometer head 9, the output of galvanometer head 9 connects field mirror 10, field mirror 10 is right against processing platform 4, processing platform 4 is installed on the X-axis line slideway 5, X-axis line slideway 5 is installed on the Y-axis line slideway 6, and Y-axis line slideway 6 is perpendicular with X-axis line slideway 5.The laser that laser instrument 1 sends focuses on the surface that is placed on the rapidoprint on the processing platform through optical system, and control system is used for the Comprehensive Control of laser instrument, processing platform, image system.Scanning galvanometer device 3 is used for the crystal silicon solar batteries edge and scans line fast.Processing platform 4 has the vacuum suction aperture, guarantees to add crystal silicon battery absorption in man-hour firmly.
Wherein, laser beam incides the corner eyeglass 8 of scanning galvanometer device, and 8 pairs of laser beam total transmissivities of corner eyeglass are to the image strip total reflection.The laser beam of incident sees through corner eyeglass 8 and incides galvanometer head 9, and laser beam incides field mirror 10 through galvanometer head 9, and laser beam sees through field mirror 10 and focuses on surface of the work.The image light reflection of surface of the work enters field mirror 10, and image light incides galvanometer head 9 by field mirror 10, and image light incides corner eyeglass 8 by galvanometer head 9,8 pairs of image light total reflections of corner eyeglass, and the image reverberation images in CCD camera lens 7.
As shown in Figure 3, processing platform 4 surfaces have 11,3 alignment pins of 3 alignment pins 11 to form the right angle backer.There are some vacuum suction apertures 12 on processing platform 4 surfaces, guarantee when specifically using can not slide relatively between processing platform 4 and the workpiece.Processing platform 4 surface design have bore channel, and bore channel inside is connected with the control of dust air-flow when specifically using, the drainage of the material residue after guaranteeing to hole.Actually add man-hour, processing work is positioned over processing platform 4 surfaces according to alignment pin 11, guarantee can not produce relative slip between processing work and the processing platform 4 by vacuum suction aperture 12, carry out the contraposition of accurate plane by 7 pairs of workpiece of the CCD camera lens in the scanning galvanometer 3 that possesses the coaxial image module, laser beam focuses on the processing work surface through scanning galvanometer 3, and, realize purpose to the workpiece dielectric etch by scanning galvanometer 3 realization high-speed linear scannings.
What need understand is: the above only is a preferred implementation of the present utility model; for those skilled in the art; under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.
Claims (2)
1. the laser scribing insulator arrangement of crystal silicon solar batteries, it is characterized in that: the output of laser instrument (1) is provided with beam expanding lens (2), the output of beam expanding lens (2) is furnished with scanning galvanometer device (3), described scanning galvanometer device (3) comprises CCD camera lens (7), corner eyeglass (8), galvanometer head (9) and field mirror (10), corner eyeglass (8) is connected mutually with the output of beam expanding lens (2), corner eyeglass (8) is gone up CCD camera lens (7) is installed, the output of corner eyeglass (8) connects galvanometer head (9), the output of galvanometer head (9) connects field mirror (10), field mirror (10) is right against processing platform (4), processing platform (4) is installed on the X-axis line slideway (5), X-axis line slideway (5) is installed on the Y-axis line slideway (6), and Y-axis line slideway (6) is perpendicular with X-axis line slideway (5).
2. the laser scribing insulator arrangement of crystal silicon solar batteries according to claim 1, it is characterized in that: described laser instrument (1) is that output wavelength is the pumped at end face of semiconductor laser instrument of infrared 1064nm or visible light 532nm or ultraviolet light 355nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120009503 CN201970016U (en) | 2011-01-13 | 2011-01-13 | Laser marking insulation equipment for crystalline silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120009503 CN201970016U (en) | 2011-01-13 | 2011-01-13 | Laser marking insulation equipment for crystalline silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201970016U true CN201970016U (en) | 2011-09-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120009503 Expired - Fee Related CN201970016U (en) | 2011-01-13 | 2011-01-13 | Laser marking insulation equipment for crystalline silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201970016U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102248289A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Laser scribing insulation equipment for crystalline silicon solar cell |
-
2011
- 2011-01-13 CN CN 201120009503 patent/CN201970016U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102248289A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Laser scribing insulation equipment for crystalline silicon solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee after: Suzhou Delphi Laser Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee before: Suzhou Delphi Laser Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110914 Termination date: 20140113 |