CN201956892U - Insulated gate bipolar transistor (IGBT) driving and protection circuit - Google Patents
Insulated gate bipolar transistor (IGBT) driving and protection circuit Download PDFInfo
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- CN201956892U CN201956892U CN2011200759521U CN201120075952U CN201956892U CN 201956892 U CN201956892 U CN 201956892U CN 2011200759521 U CN2011200759521 U CN 2011200759521U CN 201120075952 U CN201120075952 U CN 201120075952U CN 201956892 U CN201956892 U CN 201956892U
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Abstract
The utility model relates to an insulated gate bipolar transistor (IGBT) driving and protection circuit, which is applied to the driving and protection of an IGBT in an inverter circuit as well as the overload protection of the inverter circuit. The IGBT driving and protection circuit comprises a detection signal output unit, a signal processing unit and an IGBT driving and protection unit, wherein the output end of the detection signal output unit is connected with the input end of the signal processing unit; and the output end of the signal processing unit is connected with the input end of the IGBT driving and protection unit. The IGBT driving and protection circuit is simply structured and convenient to use, can judge overload properties for processing under the condition of no change in the capacity of conventional power equipment, and maximally avoids loss caused by the frequent power-off protection of the power equipment.
Description
Technical field
The utility model relates to a kind of IGBT and drives and protective circuit, is specially adapted to driving and the protection of IGBT in the inverter circuit, and the overload protection of inverter circuit.
Background technology
At present, the power-supply device on the market is no matter be DC power supply or AC power, and its core component all is to use the high-frequency inversion bridge circuit of IGBT composition.IGBT abbreviates electronic semi-conductor's switch as, because IGBT is in big electric current in circuit, and high-tension operating state, IGBT very easily damages.Particularly when load overload or inverter bridge circuit overloads,, need drive and protect processing to IGBT and inverter circuit in order to ensure the IGBT reliably working.In general power-supply device, when detecting load overload or IGBT overload, directly IGBT is turn-offed by control circuit, and the power-supply device protection is shut down.But in some particular environment, this function can not satisfy actual needs.Capacity such as power-supply device under rated condition can satisfy load request; when starting these loads or in equipment, can causing the IGBT overload during these loads of impact; thereby the power-supply device protection is shut down, also have some occasions to forbid power-supply device to be shut down suddenly, otherwise lose huge.If adopt the method that increases the power-supply device capacity, because the overload capacity of IGBT is lower, the increase of power-supply device capacity then can cause volume, weight, and the proportional increase of cost, very uneconomical.
Summary of the invention
The purpose of this utility model is exactly in order to overcome above-mentioned the deficiencies in the prior art part; and provide a kind of IGBT to drive and protective circuit; it is simple in structure; easy to use; can be under the constant situation of existing power supply place capacity; judge overload character, handle respectively, solve the protection of power-supply device frequent shutdown to greatest extent and the loss that causes.This circuit is fit to all power-supply devices that use the IGBT inverter circuit, comprises half-bridge converter, three phase inverter bridge, such as: frequency converter, UPS, charger, DC power supply, high frequency inversion electric welder, induction heater, Laser Power Devices, photovoltaic DC-to-AC converter, wind-powered electricity generation inverter etc.
The purpose of this utility model realizes by following technical measures: a kind of IGBT drives and protective circuit; comprise that detection signal output unit, signal processing unit, IGBT drive and protected location; the output of its described detection signal output unit and the input of signal processing unit link, and the output of signal processing unit and IGBT drive and the input of protected location links.
In technique scheme, the IGBT inverter bridge that described detection signal output unit is made of circuit breaker KT, rectifier bridge D1, inductance L 1, capacitor C 1, K1-K4, high frequency transformer B1, high-frequency rectification bridge D2, inductance L 2, capacitor C 2, current Hall transducer LEM1, LEM2 form; AC power 220V is through circuit breaker KT input, and through rectifier bridge D1, inductance L 1 obtains input direct voltage Vi after the capacitor C 1; Input direct voltage Vi obtains output voltage V o through IGBT inverter bridge, high frequency transformer B1, high-frequency rectification bridge D2, inductance L 2, the capacitor C 2 that K1-K4 constitutes; Current Hall transducer LEM1 is located at IGBT inverter bridge front end, and current Hall transducer LEM2 is located at the output loading end.
In technique scheme, described IGBT drives and protected location comprises IGBT drive circuit, severely subnormal signal processing circuit, IGBT instantaneous protection circuit, overload 150% delay protection circuit.
In technique scheme, described IGBT drive circuit is linked successively by RCD network, comparator U1 and IGBT driver M57962L and forms.
In technique scheme, latch that described severely subnormal signal processing circuit is made up of NAND gate U2A, U2B, U3A, U3B, U3C, U3D and comparator U4 link successively and form.
In technique scheme, described IGBT instantaneous protection circuit is linked successively by stagnant voltage comparator U5 that encircles of band and diode V1 and forms, and wherein resistance R 1 and R2 ratio of components are than reference voltage.
In technique scheme, the latch that described overload 150% delay protection circuit is made up of counter U6 and NAND gate U7A, U7B, U7C links successively and forms.
The utility model circuit structure is simple, and is easy to use, compared with prior art has the following advantages:
1) guard signal directly acts on the driving stage of IGBT pipe, handles without CPU or control IC-3525, can significantly reduce the processing time like this, improves response speed, guarantees that IGBT does not damage;
2) when the abnormal signal integrated treatment is judged, IGBT overload and load overload are separated, overload point can be provided with respectively, is independent of each other;
3) all abnormal signal integrated treatments are judged, serious short-circuit condition is treated to the shutdown protection; To generally transship and be treated to the current limliting step-down, guarantee the power-supply device operate as normal, improve the power supply capacity availability to greatest extent.In addition, the integrated treatment decision circuitry realizes by devices at full hardware, and realizes comparing to have rapidity with software.This point, particularly important aspect the IGBT protection;
4) the IGBT Drive Protecting Circuit is novel reliable, and action has stronger antijamming capability fast.
Description of drawings
Fig. 1 is the circuit theory diagrams of the utility model IGBT driving and protective circuit.
Fig. 2 is a detection signal output unit circuit diagram among the utility model embodiment.
IGBT drive circuit connection layout among Fig. 3 utility model embodiment.
DL signal generating circuit figure among Fig. 4 utility model embodiment.
Severely subnormal signal processing circuit connection layout among Fig. 5 the utility model embodiment.
IGBT instantaneous protection circuit connection diagram among Fig. 6 the utility model embodiment.
Overload 150% delay protection circuit connection diagram among Fig. 7 the utility model embodiment.
Embodiment
The utility model will be further described below in conjunction with drawings and Examples.
As shown in Figure 1, 2; present embodiment provides a kind of IGBT to drive and protective circuit; comprise that detection signal output unit, signal processing unit, IGBT drive and protected location; the output of its described detection signal output unit and the input of signal processing unit link, and the output of signal processing unit and IGBT drive and the input of protected location links.
In technique scheme, the IGBT inverter bridge that described detection signal output unit is made of circuit breaker KT, rectifier bridge D1, inductance L 1, capacitor C 1, K1-K4, high frequency transformer B1, high-frequency rectification bridge D2, inductance L 2, capacitor C 2, current Hall transducer LEM1, LEM2 form; AC power 220V is through circuit breaker KT input, and through rectifier bridge D1, inductance L 1 obtains input direct voltage Vi after the capacitor C 1; The IGBT inverter bridge that input direct voltage Vi constitutes through K1-K4, high frequency transformer B1, high-frequency rectification bridge D2, inductance L 2, capacitor C 2 form output voltage V o; Current Hall transducer LEM1 is located at IGBT inverter bridge front end, and current Hall transducer LEM2 is located at the output loading end, detects IGBT and output load current respectively.
Detection signal output unit output detection signal Vi, Vo, LEM1, behind the LEM2 these detection signals and normal voltage level are made comparisons, obtain following switching signal: output overvoltage signal GY, export under-voltage signal QY, IGBT short-circuit signal DL, IGBT overload signal GZ3, output overloading 120% signal GZ1, output overloading 150% signal GZ2; These signals output protection signal after signal processing unit processes drives and protected location to IGBT.
Be illustrated in figure 3 as the IGBT drive circuit, this drive circuit and signal processing unit link, signal processing unit output is used to allocate the allotment pulse signal of IGBT, pass through comparator U1 waveform shaping again behind the RCD network of this allotment pulse signal through diode and resistance formation, offer driver M57962L at last and drive IGBT.The RCD network can guarantee the abruptness of the shutoff of IGBT in this example, can be arranged to different Dead Times by revising parameter in other are used.In all defencive functions, its guard signal all is to realize by the 6 pin level of control U1.To turn-off the IGBT pipe when level of 6 pin is " 0 ", realize protection.Severely subnormal signal processing circuit output signal FS, IGBT instantaneous protection circuit output signal SSFS, 150% delay protection circuit output signal FZFS is transshipped in load, all inserts 6 pin of U1 at last.
Be illustrated in figure 4 as DL signal generating circuit figure.Signal LEM1 is the normal voltage comparator circuit to the circuit of DL signal, and during the IGBT short circuit, DL level " 0 " is effective.Obtaining of other signals is identical therewith, just the output level difference.
Be illustrated in figure 5 as the severely subnormal signal processing circuit.Wherein severely subnormal signal processing circuit output signal FS is the IGBT locking signal, " 0 " level is effective.The entire process process has adopted the latch be made up of NAND gate U2A, U2B, U3A, U3B, U3C, U3D and comparator U4 to link successively to form.Therefore, as long as abnormal signal occurs and will latch automatically, thereby make FS keep level "0", presentation is for shutting down and reporting to the police as a result always.The adequate condition of shutting down as seen from the figure and reporting to the police is: input direct voltage Vi signal QY3 is effective for " 1 "; QY, GZ1 are that " 1 " is effective simultaneously; DL is that " 0 " is effective; GY is that " 0 " is effective.According to different power-supply devices, the kind of these signals can be set flexibly.
Fig. 6 is an IGBT instantaneous protection circuit, is linked successively by stagnant voltage comparator U5 that encircles of band and diode V1 and forms, and wherein resistance R 1 and R2 ratio of components are than reference voltage.Signal LEM1 obtains IGBT instantaneous protection circuit output signal SSFS after being with stagnant voltage comparator U5 that encircles and diode V1, SSFS signal " 0 " is effective.This signal does not latch, and can recover automatically.At the IGBT short-time overload and transship when not serious, the instantaneous shutoff of IGBT makes the step-down of power-supply device current limliting, but does not protect shutdown, and when disturbance or instantaneous overload were eliminated, IGBT resumed work automatically, can not cause stoppage protection.
Fig. 7 is overload 150% delay protection circuit, and the latch of being made up of counter U6 and NAND gate U7A, U7B, U7C links successively and forms.Signal GZ2 enter counter U6 is in cycle regular hour, when the overload number of times of GZ2 reaches setting; signal is through after the latches; obtain load and transship 150% delay protection circuit output signal FZFS, the FZFS signal is that " 1 " is effective, and power-supply device is shut down.Counter U6 has regularly clearing function, but the overload number of times through the time that can set after automatic clear.The basic function of this circuit is to abandon in short-term, and the heavy overload signal of a spot of load is not handled, and only to for a long time, the heavy overload signal of a large amount of loads is handled.
Claims (7)
1. an IGBT drives and protective circuit; comprise that detection signal output unit, signal processing unit, IGBT drive and protected location; it is characterized in that: the output of described detection signal output unit and the input of signal processing unit link, and the output of signal processing unit and IGBT drive and the input of protected location links.
2. a kind of IGBT according to claim 1 drives and protective circuit, and it is characterized in that: the IGBT inverter bridge that described detection signal output unit is made of circuit breaker KT, rectifier bridge D1, inductance L 1, capacitor C 1, K1-K4, high frequency transformer B1, high-frequency rectification bridge D2, inductance L 2, capacitor C 2, current Hall transducer LEM1, LEM2 form; AC power 220V is through circuit breaker KT input, and through rectifier bridge D1, inductance L 1 obtains input direct voltage Vi after the capacitor C 1; Input direct voltage Vi obtains output voltage V o through IGBT inverter bridge, high frequency transformer B1, high-frequency rectification bridge D2, inductance L 2, the capacitor C 2 that K1-K4 constitutes; Current Hall transducer LEM1 is located at IGBT inverter bridge front end, and current Hall transducer LEM2 is located at the output loading end.
3. a kind of IGBT according to claim 1 drives and protective circuit, it is characterized in that: described IGBT drives and protected location comprises IGBT drive circuit, severely subnormal signal processing circuit, IGBT instantaneous protection circuit, overload 150% delay protection circuit.
4. a kind of IGBT according to claim 3 drives and protective circuit, and it is characterized in that: described IGBT drive circuit is linked successively by RCD network, comparator U1 and IGBT driver M57962L and forms.
5. a kind of IGBT according to claim 3 drives and protective circuit, it is characterized in that: latch that described severely subnormal signal processing circuit is made up of NAND gate U2A, U2B, U3A, U3B, U3C, U3D and comparator U4 link successively and form.
6. a kind of IGBT according to claim 3 drives and protective circuit, it is characterized in that: described IGBT instantaneous protection circuit is linked successively by stagnant voltage comparator U5 that encircles of band and diode V1 and forms, and wherein resistance R 1 and R2 ratio of components are than reference voltage.
7. a kind of IGBT according to claim 3 drives and protective circuit, and it is characterized in that: the latch that described overload 150% delay protection circuit is made up of counter U6 and NAND gate U7A, U7B, U7C links successively and forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200759521U CN201956892U (en) | 2011-03-22 | 2011-03-22 | Insulated gate bipolar transistor (IGBT) driving and protection circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200759521U CN201956892U (en) | 2011-03-22 | 2011-03-22 | Insulated gate bipolar transistor (IGBT) driving and protection circuit |
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| CN201956892U true CN201956892U (en) | 2011-08-31 |
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| CN2011200759521U Expired - Fee Related CN201956892U (en) | 2011-03-22 | 2011-03-22 | Insulated gate bipolar transistor (IGBT) driving and protection circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036407A (en) * | 2012-12-06 | 2013-04-10 | 江苏嘉钰新能源技术有限公司 | Soft switch control circuit for full-bridge vehicle-mounted battery charger |
| CN103151907A (en) * | 2011-12-07 | 2013-06-12 | 哈尔滨智木科技有限公司 | High-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method |
| CN104813573A (en) * | 2012-09-06 | 2015-07-29 | 西门子公司 | Apparatus and methods for input protection for power converters |
-
2011
- 2011-03-22 CN CN2011200759521U patent/CN201956892U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151907A (en) * | 2011-12-07 | 2013-06-12 | 哈尔滨智木科技有限公司 | High-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method |
| CN104813573A (en) * | 2012-09-06 | 2015-07-29 | 西门子公司 | Apparatus and methods for input protection for power converters |
| CN104813573B (en) * | 2012-09-06 | 2017-10-10 | 西门子公司 | Apparatus and method for the input protection of power converter |
| CN103036407A (en) * | 2012-12-06 | 2013-04-10 | 江苏嘉钰新能源技术有限公司 | Soft switch control circuit for full-bridge vehicle-mounted battery charger |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110831 Termination date: 20130322 |