CN201956389U - 一种高导热led光源模块 - Google Patents

一种高导热led光源模块 Download PDF

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CN201956389U
CN201956389U CN201020522932XU CN201020522932U CN201956389U CN 201956389 U CN201956389 U CN 201956389U CN 201020522932X U CN201020522932X U CN 201020522932XU CN 201020522932 U CN201020522932 U CN 201020522932U CN 201956389 U CN201956389 U CN 201956389U
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heat
conducting plate
led chips
light source
module carrier
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黄金鹿
缪应明
郭金年
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Suzhou Zhongze Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

一种高导热LED光源模块由导热板、液体金属、模块支架、正电极、负电极、LED芯片、金线、荧光粉和灌封胶构成,液体金属注入导热板凹坑内,模块支架固连于导热板并正对导热板凹坑设置,模块支架底板与液体金属直接接触,LED芯片阵列排布固定于模块支架底板固晶过孔,使LED芯片衬底层嵌于固晶过孔并直接接触液体金属,其缝隙处密封胶封处理,阵列排布的LED芯片由金线串联连接后再并联连接于正负电极,串并联连接后的LED芯片上方涂布荧光粉,最后再由灌封胶封装。本实用新型封装结构LED芯片衬底层与导热板间加设液体金属实现LED芯片与导热板间的无缝对接,从而让LED发出的热量迅速传导出去,有效控制LED结温,增加LED使用寿命和发光效率。

Description

一种高导热LED光源模块
技术领域
本实用新型涉及一种照明用LED光源,确切地讲是一种利用液体金属传热导热的高导热LED光源模块。
背景技术
随着能源及环境问题的日益显现,节能产业及其产品越来越受到重视,半导体二极管(LED)照明的节能效果已被公认,但LED诸如散热、配光等应用瓶颈还没有完全很好的得以解决,特别是散热问题尤为突出,众所周知,LED芯片光效和寿命与其结温呈现一定得相关关系,即结温越低光效越高,相应的寿命也就越长,控制LED结温的关键技术是散热导热技术,其技术核心是先将LED发出的热量有效的快速的传导至外部散热器,热量经外部散热器散发到周边环境中,制约LED热量传导的因素有传热通道和热量梯度,在设定外部散热器温度一定的情况下我们希望温度梯度越小越好,即将LED结温控制在尽量低是水平,如此要将一定量的的热量传递出去就必须设计更合理、更有效的传热通道。传统LED芯片封装工艺的传热通道为:LED芯片-固晶胶-热沉-导热胶-散热器,此通道最大的弊端在于LED芯片和金属热沉间贴合不紧,两者间存在间隙,通常加设固晶胶以填补间隙和固定芯片,而现有固晶胶的导热系数也不能和金属相比拟,而且固晶胶与LED芯片以及金属热沉间也存在很大的热阻。
发明内容
为了克服上述缺陷,本实用新型提供了一种光源模块,通过液体金属与LED衬底层无缝接触进行传热导热。
本实用新型为了解决其技术问题所采用的技术方案是:
一种高导热LED光源模块由导热板、液体金属、模块支架、正电极、负电极、LED芯片、金线、荧光粉和灌封胶构成,液体金属注入导热板凹坑内,模块支架固连于导热板并正对导热板凹坑设置,模块支架底板与液体金属直接接触,LED芯片阵列排布固定于模块支架底板固晶过孔,使LED芯片衬底层嵌于固晶过孔并直接接触液体金属,其缝隙处密封胶封处理,阵列排布的LED芯片由金线串联连接后再并联连接于正负电极,串并联连接后的LED芯片上方涂布荧光粉,最后再由灌封胶封装。
所述的导热板由金属或合金材料制成片状结构,导热板中间部位设置凹坑,周边设螺丝过孔。
所述的液体金属是一种在室温下呈液态的金属或合金。
所述的模块支架制成凹形结构,其中间部位底板上设置固晶过孔,固晶过孔呈阵列排布,正电极和负电极嵌于模块支架边框内并对应设置,模块支架两侧分别对应设置正电极和负电极外露部分,同时模块支架边框上设置正电极和负电极外接焊接点。
所述的正电极和负电极为低电阻金属或合金制成片状结构,嵌于模块支架内,留出焊接金线和外接电源线的焊接点。
所述的LED芯片为大功率发光二极管。
本实用新型的有益效果是:传统LED芯片封装工艺的传热通道为:LED芯片-固晶胶-热沉-导热胶-散热器,此通道最大的弊端在于LED芯片和金属热沉间贴合不紧,两者间存在间隙,通常加设固晶胶以填补间隙和固定芯片,而现有固晶胶的导热系数也不能和金属相比拟,而且固晶胶与LED芯片以及金属热沉间也存在很大的热阻,本实用新型新的封装结构中LED芯片衬底层与导热板间加设液体金属可实现LED芯片与导热板间的无缝对接,从而有效改善传统封装工艺中LED芯片和金属热沉间贴合不紧,固晶胶导热性能不佳等缺陷,让LED发出的热量迅速传导出去,有效控制LED结温,增加LED使用寿命和发光效率。
附图说明:
图1为导热板结构示意图;
图2为模块支架结构示意图;
图3为模块支架平面视图;
图4为图3的A-A剖面图;
图5为本实用新型组成结构示意图;
图6为本实用新型整体结构示意图;
图7为本实用新型平面视图;
图8为图7的B-B剖面图;
图9为LED芯片固定连接细部结构图;
附图中所指图例
1、导热板  11、导热版凹坑  12、螺丝过孔  2、液体金属  3、模块支架
31、支架边框  32、底板  33、固晶过孔  4、正电极
5、负电极  6、LED芯片  7、金线  8、荧光粉  9、灌封胶  10密封胶
具体实施方式
如图1所示:导热板1由金属或合金材料制成片状结构,导热板中间部位设置凹坑11,凹坑设置两级台阶,最低处装填液体金属,上面一级固定模块支架,导热版周边设螺丝过孔12用于LED光源模块固定安装。
液体金属2是一种在室温下呈液态的金属或合金,其一般为锡、镁、镓、铟等的合金材料。
如图2、3、4所示:模块支架3制成凹形结构,其中间部位底板32设置固晶过孔33,固晶过孔呈阵列排布,正电极和负电极嵌于模块支架边框31内并对应设置,模块支架两侧分别对应设置正电极和负电极外露部分,同时模块支架边框上设置正电极和负电极外接焊接点。
正电极4和负电极5为低电阻金属或合金制成片状结构,嵌于模块支架内,留出焊接金线和外接电源线的焊接点。
LED芯片6为大功率发光二极管。
如图5所示:一种高导热LED光源模块由导热板1、液体金属2、模块支架3、正电极(4)、负电极5、LED芯片6、金线7、荧光粉8和灌封胶9构成。
如图6、7、8、9所示:液体金属注入导热板凹坑11内,模块支架固连于导热板并正对导热板凹坑设置,模块支架底板与液体金属直接接触,LED芯片阵列排布固定于模块支架底板32固晶过孔33,使LED芯片衬底层61嵌于固晶过孔并直接接触液体金属,其缝隙处密封胶10密封处理,阵列排布的LED芯片由金线串联连接后再并联连接于正负电极,串并联连接后的LED芯片上方涂布荧光粉,最后再由灌封胶封装。

Claims (6)

1.一种高导热LED光源模块,其特征在于:由导热板(1)、液体金属(2)、模块支架(3)、正电极(4)、负电极(5)、LED芯片(6)、金线(7)、荧光粉(8)和灌封胶(9)构成,液体金属注入导热板凹坑(11)内,模块支架固连于导热板并正对导热板凹坑设置,模块支架底板与液体金属直接接触,LED芯片阵列排布固定于模块支架底板(32)固晶过孔(33),使LED芯片衬底层(61)嵌于固晶过孔并直接接触液体金属,其缝隙处密封胶(10)密封处理,阵列排布的LED芯片由金线串联连接后再并联连接于正负电极,串并联连接后的LED芯片上方涂布荧光粉,最后再由灌封胶封装。
2.根据权利要求1所述的一种高导热LED光源模块,其特征在于:所述的导热板(1)由金属或合金材料制成片状结构,导热板中间部位设置凹坑(11),周边设螺丝过孔(12)。
3.根据权利要求1所述的一种高导热LED光源模块,其特征在于:所述的液体金属(2)是一种在室温下呈液态的金属或合金。
4.根据权利要求1所述的一种高导热LED光源模块,其特征在于:所述的模块支架(3)制成凹形结构,其中间部位底板(32)上设置固晶过孔(33),固晶过孔呈阵列排布,正电极和负电极嵌于模块支架边框(31)内并对应设置,模块支架两侧分别对应设置正电极和负电极外露部分,同时模块支架边框上设置正电极和负电极外接焊接点。
5.根据权利要求1所述的一种高导热LED光源模块,其特征在于:所述的正电极(4)和负电极(5)为低电阻金属或合金制成片状结构,嵌于模块支架内,留出焊接金线和外接电源线的焊接点。
6.根据权利要求1所述的一种高导热LED光源模块,其特征在于:所述的LED芯片(6)为大功率发光二极管。
CN201020522932XU 2010-09-03 2010-09-03 一种高导热led光源模块 Expired - Fee Related CN201956389U (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103123950A (zh) * 2013-02-06 2013-05-29 深圳市蓝科电子有限公司 一种led光源的封装结构及封装方法
CN105529391A (zh) * 2014-10-24 2016-04-27 苏州中泽光电科技有限公司 一种led液态金属集成封装光源模块
CN104112737B (zh) * 2014-06-19 2016-09-28 华中科技大学 一种用于汽车前照灯的led模块封装方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103123950A (zh) * 2013-02-06 2013-05-29 深圳市蓝科电子有限公司 一种led光源的封装结构及封装方法
CN104112737B (zh) * 2014-06-19 2016-09-28 华中科技大学 一种用于汽车前照灯的led模块封装方法
CN105529391A (zh) * 2014-10-24 2016-04-27 苏州中泽光电科技有限公司 一种led液态金属集成封装光源模块

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