CN201956384U - 非矩形发光芯片 - Google Patents
非矩形发光芯片 Download PDFInfo
- Publication number
- CN201956384U CN201956384U CN2010205007409U CN201020500740U CN201956384U CN 201956384 U CN201956384 U CN 201956384U CN 2010205007409 U CN2010205007409 U CN 2010205007409U CN 201020500740 U CN201020500740 U CN 201020500740U CN 201956384 U CN201956384 U CN 201956384U
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- China
- Prior art keywords
- chip
- rectangle
- light
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004020 luminiscence type Methods 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 241000826860 Trapezium Species 0.000 abstract 2
- 239000000463 material Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- 238000007598 dipping method Methods 0.000 description 11
- 238000000605 extraction Methods 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- -1 spinelle Chemical compound 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010205007409U CN201956384U (zh) | 2010-08-10 | 2010-08-10 | 非矩形发光芯片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010205007409U CN201956384U (zh) | 2010-08-10 | 2010-08-10 | 非矩形发光芯片 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201956384U true CN201956384U (zh) | 2011-08-31 |
Family
ID=44500486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010205007409U Expired - Lifetime CN201956384U (zh) | 2010-08-10 | 2010-08-10 | 非矩形发光芯片 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN201956384U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376834A (zh) * | 2010-08-10 | 2012-03-14 | 亚威朗光电(中国)有限公司 | 非矩形发光器件 |
CN103137810A (zh) * | 2011-11-25 | 2013-06-05 | 山东浪潮华光光电子股份有限公司 | 一种利用两次划片制备的GaN基发光二极管芯片及其制备方法 |
CN103840049A (zh) * | 2012-11-23 | 2014-06-04 | 苏州科医世凯半导体技术有限责任公司 | 一种可定制发光面形状的半导体led光源 |
-
2010
- 2010-08-10 CN CN2010205007409U patent/CN201956384U/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376834A (zh) * | 2010-08-10 | 2012-03-14 | 亚威朗光电(中国)有限公司 | 非矩形发光器件 |
CN103137810A (zh) * | 2011-11-25 | 2013-06-05 | 山东浪潮华光光电子股份有限公司 | 一种利用两次划片制备的GaN基发光二极管芯片及其制备方法 |
CN103137810B (zh) * | 2011-11-25 | 2015-08-19 | 山东浪潮华光光电子股份有限公司 | 一种利用两次划片制备的GaN基发光二极管芯片及其制备方法 |
CN103840049A (zh) * | 2012-11-23 | 2014-06-04 | 苏州科医世凯半导体技术有限责任公司 | 一种可定制发光面形状的半导体led光源 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Non-rectangle luminescence chip Effective date of registration: 20130108 Granted publication date: 20110831 Pledgee: Pudong Development Bank of Shanghai, Limited by Share Ltd, Jiaxing branch Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000017 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PP01 | Preservation of patent right |
Effective date of registration: 20130423 Granted publication date: 20110831 |
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RINS | Preservation of patent right or utility model and its discharge | ||
PD01 | Discharge of preservation of patent |
Date of cancellation: 20130716 Granted publication date: 20110831 |
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RINS | Preservation of patent right or utility model and its discharge | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20130702 Granted publication date: 20110831 Pledgee: Pudong Development Bank of Shanghai, Limited by Share Ltd, Jiaxing branch Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000017 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Non-rectangle luminescence chip Effective date of registration: 20130822 Granted publication date: 20110831 Pledgee: Haiyan Hangzhou Bay Bridge New Area Development Co., Ltd. Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000603 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
ASS | Succession or assignment of patent right |
Owner name: ZHEJIANG INVENLUX TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: INVENLUX OPTOELECTRONICS (CHINA) CO., LTD. Effective date: 20150824 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150824 Address after: 314300, Jiaxing Province, Haiyan County, Zhejiang Economic Development Zone, Hangzhou Bay Bridge, New District, 01 provincial road, B7 Road East Patentee after: Zhejiang Invenlux Technology Co.,Ltd. Address before: 314305 Silver Beach Road, Haiyan new area, Haiyan Economic Development Zone, Haiyan County, Zhejiang, 1 Patentee before: InvenLux Photoelectronics (China) Co., Ltd. |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20150813 Granted publication date: 20110831 Pledgee: Haiyan Hangzhou Bay Bridge New Area Development Co., Ltd. Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000603 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20110831 |