CN201928251U - Intelligent insulated gate bipolar transistor (IGBT) - Google Patents
Intelligent insulated gate bipolar transistor (IGBT) Download PDFInfo
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- CN201928251U CN201928251U CN2010205968586U CN201020596858U CN201928251U CN 201928251 U CN201928251 U CN 201928251U CN 2010205968586 U CN2010205968586 U CN 2010205968586U CN 201020596858 U CN201020596858 U CN 201020596858U CN 201928251 U CN201928251 U CN 201928251U
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Abstract
The utility model relates to an intelligent insulated gate bipolar transistor (IGBT), which comprises a power supply circuit, a C-pole overvoltage detection circuit, a temperature detection circuit, an E-pole overcurrent detection circuit, an input overvoltage and undervoltage detection circuit and a drive control IGBT circuit, wherein the input end of the power supply circuit is respectively connected with a C-pole pin and a G-pole pin, the input end of the C-pole overvoltage detection circuit is connected with the C-pole pin, the input ends of the temperature detection circuit and the E-pole overcurrent detection circuit are respectively connected with an E-pole pin, the input end of the input overvoltage and undervoltage detection circuit is connected with the G-pole pin, and the output ends of the C-pole overvoltage detection circuit, the temperature detection circuit, the E-pole overcurrent detection circuit and the input overvoltage and undervoltage detection circuit are connected with the input end of the drive control IGBT circuit. By adopting the technical scheme, on the premise that the existing package of the IGBT is not changed, since an intelligent circuit module is designed in the IGBT and the IGBT is switched off in time when abnormal situations occur, not only can complex peripheral protection circuits be omitted, but also the design of the added circuit module is concise and clear and the circuit module is simple and convenient to install; and since conventional integrated circuits such as a comparator, a latch and the like are mainly used, the cost is low, the realization is easy and the intelligent IGBT is particularly suitable for the field of induction cookers, switching power supplies or variable-frequency products.
Description
Technical field
The utility model relates to a kind of insulated gate bipolar transistor, is commonly referred to as IGBT (InsulatedGate Bipolar Transistor), and particularly a kind of IGBT with intelligent protection belongs to the improvement technical field of IGBT.
Background technology
Conventional visible Fig. 1 of IGBT can regard a simple transistor as, by G utmost point input signal, controls ending with open-minded of the C utmost point and the E utmost point.This electronic device is without any defencive function, so the non-constant of antijamming capability, in use takes place more anyly unusually all might burn out as overtemperature, overcurrent, overvoltage, situation such as under-voltage and lost efficacy.The IGBT of defencive function has now also appearred having; the technical scheme of IGBT protection generally is to add various protective circuits in the peripheral circuit of IGBT; but the sensitivity of this peripheral protective circuit is not high; and the circuit connecting relation complexity, relate to the electronic devices and components of more costliness, therefore often really effectively use because of with high costs being difficult to.
The utility model content
The purpose of this utility model is to consider the deficiencies in the prior art, and a kind of with low cost, safe and reliable, IGBT that inside possesses intelligent protection module is provided.
The technical solution of the utility model is: a kind of intelligent IGBT, it is characterized in that comprising power circuit (1), C utmost point overvoltage circuit for detecting (2), temperature detection circuit (3), E utmost point overcurrent circuit for detecting (4), input over-and under-voltage circuit for detecting (5), drive controlling IGBT circuit (6), described power circuit (1) input is connected with G utmost point pin with C utmost point pin respectively, C utmost point overvoltage circuit for detecting (2) input connects C utmost point pin, temperature detection circuit (3), the input of E utmost point overcurrent circuit for detecting (4) connects E utmost point pin respectively, the input of input over-and under-voltage circuit for detecting (5) connects G utmost point pin, C utmost point overvoltage circuit for detecting (2), temperature detection circuit (3), E utmost point overcurrent circuit for detecting (4), the output of input over-and under-voltage circuit for detecting (5) connects drive controlling IGBT circuit (6) input.
Described drive controlling IGBT circuit (6), comprise logic sum gate U4, logical AND gate U5, ratioed transistor Q1, the output Y of logic sum gate U4 connects the input B of logical AND gate U5, the input A of logical AND gate U5 connects G utmost point pin, output Y connects the base stage of ratioed transistor Q1, the grid of ratioed transistor Q1 connects C utmost point pin, grounded emitter.
Described C utmost point overvoltage circuit for detecting (2) comprises resistance R 1, resistance R 2, comparator U3, logic inverter U2, RS latch U6, the positive input terminal of comparator U3 connects resistance R 1 and R2 respectively, negative input end connects reference voltage ref3, and output connects the input A of logic inverter U2 and the input S of RS latch U6; Resistance R 1 other end connects C utmost point pin, the other end ground connection of resistance R 2; The input R of RS latch U6 receives the comparison signal of input over-and under-voltage circuit for detecting (5) output, and output S connects the input A of logic sum gate U4 in the drive controlling IGBT circuit (6).
Described power circuit (1) comprises resistance R 6, diode D1, diode D2, constant-current source U12, power supply U1, resistance R 6 one ends connect C utmost point pin, the other end connects constant-current source U12 input, constant-current source U12 output connects diode D1 positive pole, the positive pole of diode D2 is connected with G utmost point pin, diode D1 is connected power supply U1 respectively with the negative pole of diode D2, and the control end of constant-current source U12 connects the output of logic inverter U2 in the C utmost point overvoltage circuit for detecting (2).
Described temperature detection circuit (3) comprises temperature-sensitive element NTC, comparator U11 and resistance R 3, temperature-sensitive element NTC one end connects power supply VCC, the other end is connected to the positive input terminal of resistance R 3 one ends and comparator U11, resistance R 3 other end ground connection, the output of comparator U11 connects the input D of logic sum gate U4 in the drive controlling IGBT circuit (6).
Described E utmost point overcurrent circuit for detecting (4) comprises comparator U8, resistance R 5, the positive input terminal of comparator U8 connects the ratioed transistor Q1 in the drive controlling IGBT circuit (6), negative input end meets reference voltage ref2, and output connects logic sum gate U4 input E in the drive controlling IGBT circuit (6); Resistance R 5 one ends connect the positive input terminal of comparator U8, other end ground connection.
Comprise window comparator U7, comparator U9 and RS latch U10 in described input over-and under-voltage circuit for detecting (5), the positive input terminal of window comparator U7 connects reference voltage ref4, negative input end connects G utmost point pin, and output connects the input B of logic sum gate U4 in the input R of RS latch U6 among the input R, C utmost point overvoltage circuit for detecting (2) of RS latch U10 and the drive controlling IGBT circuit (6) respectively; The positive input terminal of comparator U9 connects G utmost point pin, and negative input end connects reference voltage ref5, and output connects the S input of RS latch U10; The output Q of RS latch U10 connects the input C of logic sum gate U4 in the drive controlling IGBT circuit (6).
Wherein, the input R of the RS latch U6 of described C utmost point overvoltage circuit for detecting (2) connects the output of window comparator U7 in the input over-and under-voltage circuit for detecting (5).
Operation principle of the present utility model is, power circuit is obtained the voltage input by the C and the G utmost point, through being converted to system power supply voltage, C utmost point overvoltage circuit for detecting, temperature detection circuit, E utmost point overcurrent circuit for detecting (4), input over-and under-voltage circuit for detecting output signal are connected to the input of drive controlling IGBT circuit, IGBT is opened or closed to drive controlling IGBT circuit through calculation process with decision.
The beneficial effects of the utility model are; under the situation that does not change the current encapsulation of IGBT; the smart circuit of portion's planning and designing within it module; when appearance is unusual, in time turn-off IGBT; not only saved complicated peripheral protective circuit, and the circuit module that is added design is short and sweet, cloth adorn easy owing to manyly form with conventional IC such as comparator, latch; therefore with low cost, be easy to realize, be specially adapted to electromagnetic oven, Switching Power Supply or frequency conversion product scope.
Description of drawings
Fig. 1 is the circuit symbol figure of existing IGBT device.
Fig. 2 is a circuit block diagram of the present utility model.
Fig. 3 is the circuit theory diagrams of the utility model embodiment.
Fig. 4 is the RS logical circuitry of the utility model embodiment.
Fig. 5 is the RS logic true value table of the utility model embodiment.
Embodiment
Below in conjunction with drawings and Examples embodiment of the present utility model is described further.
As Fig. 2, shown in Figure 3, a kind of intelligent IGBT, comprise power circuit 1, C utmost point overvoltage circuit for detecting 2, temperature detection circuit 3, E utmost point overcurrent circuit for detecting 4, input over-and under-voltage circuit for detecting 5, drive controlling IGBT circuit 6, wherein the input of power circuit 1 is connected with G utmost point pin with C utmost point pin respectively, the input of C utmost point overvoltage circuit for detecting 2, temperature detection circuit 3 and E utmost point overcurrent circuit for detecting 4, input over-and under-voltage circuit for detecting 5 connects C utmost point pin, E utmost point pin and G utmost point pin respectively, and output connects drive controlling IGBT circuit 6 inputs.
Specifically, power circuit 1 comprises resistance R 6, diode D1, diode D2, constant-current source U12, power supply U1, resistance R 6 one ends connect C utmost point pin, the other end connects constant-current source U12 input, constant-current source U12 output connects diode D1 positive pole, the positive pole of diode D2 is connected with G utmost point pin, and diode D1 is connected power supply U1 respectively with the negative pole of diode D2, and the control end of constant-current source U12 connects the output of logic inverter U2 in the C utmost point overvoltage circuit for detecting 2.
C utmost point overvoltage circuit for detecting 2 comprises resistance R 1, resistance R 2, comparator U3, logic inverter U2, RS latch U6, the positive input terminal of comparator U3 connects resistance R 1 and R2 respectively, negative input end connects reference voltage ref3, and output connects the input A of logic inverter U2 and the input S of RS latch U6; Resistance R 1 other end connects C utmost point pin, the other end ground connection of resistance R 2; The input R of RS latch U6 connects the output of window comparator U7 in the input over-and under-voltage circuit for detecting 5, and output S connects the input A of logic sum gate U4 in the drive controlling IGBT circuit 6.
E utmost point overcurrent circuit for detecting 4 comprises comparator U8, resistance R 5, the positive input terminal of comparator U8 connects the ratioed transistor Q1 in the drive controlling IGBT circuit 6, negative input end meets reference voltage ref2, and output connects logic sum gate U4 input E in the drive controlling IGBT circuit 6; Resistance R 5 one ends connect the positive input terminal of comparator U8, other end ground connection.
Input over-and under-voltage circuit for detecting 5 comprises window comparator U7, comparator U9 and RS latch U10, the positive input terminal of window comparator U7 connects reference voltage ref4, negative input end connects G utmost point pin, and output connects the input B of logic sum gate U4 in the input R of RS latch U6 among the input R, C utmost point overvoltage circuit for detecting 2 of RS latch U10 and the drive controlling IGBT circuit 6 respectively; The positive input terminal of comparator U9 connects G utmost point pin, and negative input end connects reference voltage ref5, and output connects the S input of RS latch U10; The output Q of RS latch U10 connects the input C of logic sum gate U4 in the drive controlling IGBT circuit 6.
Drive controlling IGBT circuit 6, comprise logic sum gate U4, logical AND gate U5, IGBT Q1, the output Y of logic sum gate U4 connects the input B of logical AND gate U5, the input A of logical AND gate U5 connects G utmost point pin, output Y connects the base stage of ratioed transistor Q1, the grid of ratioed transistor Q1 connects C utmost point pin, grounded emitter.
Fig. 4 and Fig. 5 are respectively logical circuitry and the RS logic true value table of RS latch U10 in the foregoing description input over-and under-voltage circuit for detecting.
By the configuration design of above circuit, a series of protective circuits of the inner formation of IGBT are monitored in real time to IGBT.In a single day take place unusually during IGBT work, internal circuit is exported corresponding signal at once, turn-offs IGBT at once, and protection IGBT is after treating to eliminate unusually.But IGBT is operate as normal still.The conventional IGBT that compares, its reliability of IGBT and the life-span of band internal protection module significantly promote, for the application of IGBT provides solid guarantee more.
Claims (9)
1. intelligent IGBT, it is characterized in that comprising power circuit (1), C utmost point overvoltage circuit for detecting (2), temperature detection circuit (3), E utmost point overcurrent circuit for detecting (4), input over-and under-voltage circuit for detecting (5), drive controlling IGBT circuit (6), described power circuit (1) input is connected with G utmost point pin with C utmost point pin respectively, C utmost point overvoltage circuit for detecting (2) input connects C utmost point pin, temperature detection circuit (3), the input of E utmost point overcurrent circuit for detecting (4) connects E utmost point pin respectively, the input of input over-and under-voltage circuit for detecting (5) connects G utmost point pin, C utmost point overvoltage circuit for detecting (2), temperature detection circuit (3), E utmost point overcurrent circuit for detecting (4), the output of input over-and under-voltage circuit for detecting (5) connects drive controlling IGBT circuit (6) input.
2. according to right 1 described a kind of intelligent IGBT, it is characterized in that described drive controlling IGBT circuit (6), comprise logic sum gate U4, logical AND gate U5, ratioed transistor Q1, the output Y of logic sum gate U4 connects the input B of logical AND gate U5, the input A of logical AND gate U5 connects G utmost point pin, output Y connects the base stage of ratioed transistor Q1, and the grid of ratioed transistor Q1 connects C utmost point pin, grounded emitter.
3. according to right 2 described a kind of intelligent IGBT, it is characterized in that described C utmost point overvoltage circuit for detecting (2) comprises resistance R 1, resistance R 2, comparator U3, logic inverter U2, RS latch U6, the positive input terminal of comparator U3 connects resistance R 1 and R2 respectively, negative input end connects reference voltage ref3, and output connects the input A of logic inverter U2 and the input S of RS latch U6; Resistance R 1 other end connects C utmost point pin, the other end ground connection of resistance R 2; The input R of RS latch U6 receives the comparison signal of input over-and under-voltage circuit for detecting (5) output, and output S connects the input A of logic sum gate U4 in the drive controlling IGBT circuit (6).
4. according to right 3 described a kind of intelligent IGBT, it is characterized in that described power circuit (1) comprises resistance R 6, diode D1, diode D2, constant-current source U12, power supply U1, resistance R 6 one ends connect C utmost point pin, the other end connects constant-current source U12 input, constant-current source U12 output connects diode D1 positive pole, the positive pole of diode D2 is connected with G utmost point pin, diode D1 is connected power supply U1 respectively with the negative pole of diode D2, and the control end of constant-current source U12 connects the output of logic inverter U2 in the C utmost point overvoltage circuit for detecting (2).
5. according to right 2 described a kind of intelligent IGBT, it is characterized in that described temperature detection circuit (3) comprises temperature-sensitive element NTC, comparator U11 and resistance R 3, temperature-sensitive element NTC one end connects power supply VCC, the other end is connected to the positive input terminal of resistance R 3 one ends and comparator U11, resistance R 3 other end ground connection, the output of comparator U11 connects the input D of logic sum gate U4 in the drive controlling IGBT circuit (6).
6. according to right 2 described a kind of intelligent IGBT, it is characterized in that described E utmost point overcurrent circuit for detecting (4) comprises comparator U8, resistance R 5, the positive input terminal of comparator U8 connects the ratioed transistor Q1 in the drive controlling IGBT circuit (6), negative input end meets reference voltage ref2, and output connects logic sum gate U4 input E in the drive controlling IGBT circuit (6); Resistance R 5 one ends connect the positive input terminal of comparator U8, other end ground connection.
7. according to right 3 described a kind of intelligent IGBT, it is characterized in that described input over-and under-voltage circuit for detecting (5) comprises window comparator U7, comparator U9 and RS latch U10, the positive input terminal of window comparator U7 connects reference voltage ref4, negative input end connects G utmost point pin, and output connects the input B of logic sum gate U4 in the input R of RS latch U6 among the input R, C utmost point overvoltage circuit for detecting (2) of RS latch U10 and the drive controlling IGBT circuit (6) respectively; The positive input terminal of comparator U9 connects G utmost point pin, and negative input end connects reference voltage ref5, and output connects the S input of RS latch U10; The output Q of RS latch U10 connects the input C of logic sum gate U4 in the drive controlling IGBT circuit (6).
8. according to right 7 described a kind of intelligent IGBT, it is characterized in that: the input R of the RS latch U6 of described C utmost point overvoltage circuit for detecting (2) connects the output of window comparator U7 in the input over-and under-voltage circuit for detecting (5).
9. according to right 1 described a kind of intelligent IGBT, it is characterized in that:
Described power circuit (1) comprises resistance R 6, diode D1, diode D2, constant-current source U12, power supply U1, resistance R 6 one ends connect C utmost point pin, the other end connects constant-current source U12 input, constant-current source U12 output connects diode D1 positive pole, the positive pole of diode D2 is connected with G utmost point pin, diode D1 is connected power supply U1 respectively with the negative pole of diode D2, and the control end of constant-current source U12 connects the output of logic inverter U2 in the C utmost point overvoltage circuit for detecting (2);
Described C utmost point overvoltage circuit for detecting (2) comprises resistance R 1, resistance R 2, comparator U3, logic inverter U2, RS latch U6, the positive input terminal of comparator U3 connects resistance R 1 and R2 respectively, negative input end connects reference voltage ref 3, and output connects the input A of logic inverter U2 and the input S of RS latch U6; Resistance R 1 other end connects C utmost point pin, the other end ground connection of resistance R 2; The input R of RS latch U6 connects the output of window comparator U7 in the input over-and under-voltage circuit for detecting (5), and output S connects the input A of logic sum gate U4 in the drive controlling IGBT circuit (6);
Described temperature detection circuit (3) comprises temperature-sensitive element NTC, comparator U11 and resistance R 3, temperature-sensitive element NTC one end connects power supply VCC, the other end is connected to the positive input terminal of resistance R 3 one ends and comparator U11, resistance R 3 other end ground connection, the output of comparator U11 connects the input D of logic sum gate U4 in the drive controlling IGBT circuit (6);
Described E utmost point overcurrent circuit for detecting (4) comprises comparator U8, resistance R 5, the positive input terminal of comparator U8 connects ratioed transistor Q1 in the drive controlling IGBT circuit (6), negative input end meets reference voltage ref2, and output connects logic sum gate U4 input E in the drive controlling IGBT circuit (6); Resistance R 5 one ends connect the positive input terminal of comparator U8, other end ground connection;
Described input over-and under-voltage circuit for detecting (5) comprises window comparator U7, comparator U9 and RS latch U10, the positive input terminal of window comparator U7 connects reference voltage ref4, negative input end connects G utmost point pin, and output connects the input B of logic sum gate U4 in the input R of RS latch U6 among the input R, C utmost point overvoltage circuit for detecting (2) of RS latch U10 and the drive controlling IGBT circuit (6) respectively; The positive input terminal of comparator U9 connects G utmost point pin, and negative input end connects reference voltage ref5, and output connects the S input of RS latch U10; The output Q of RS latch U10 connects the input C of logic sum gate U4 in the drive controlling IGBT circuit (6);
Described drive controlling IGBT circuit (6), comprise logic sum gate U4, logical AND gate U5, ratioed transistor Q1, the output Y of logic sum gate U4 connects the input B of logical AND gate U5, the input A of logical AND gate U5 connects G utmost point pin, output Y connects the base stage of ratioed transistor Q1, the grid of ratioed transistor Q1 connects C utmost point pin, grounded emitter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205968586U CN201928251U (en) | 2010-11-05 | 2010-11-05 | Intelligent insulated gate bipolar transistor (IGBT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205968586U CN201928251U (en) | 2010-11-05 | 2010-11-05 | Intelligent insulated gate bipolar transistor (IGBT) |
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| Publication Number | Publication Date |
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| CN201928251U true CN201928251U (en) | 2011-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010205968586U Expired - Lifetime CN201928251U (en) | 2010-11-05 | 2010-11-05 | Intelligent insulated gate bipolar transistor (IGBT) |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105490253A (en) * | 2014-10-10 | 2016-04-13 | 佛山市顺德区美的电热电器制造有限公司 | Electromagnetic heating system, over-temperature protection method and device for power device of electromagnetic heating system |
-
2010
- 2010-11-05 CN CN2010205968586U patent/CN201928251U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105490253A (en) * | 2014-10-10 | 2016-04-13 | 佛山市顺德区美的电热电器制造有限公司 | Electromagnetic heating system, over-temperature protection method and device for power device of electromagnetic heating system |
| CN105490253B (en) * | 2014-10-10 | 2018-06-08 | 佛山市顺德区美的电热电器制造有限公司 | The excess temperature protection method of electromagnetic heating system and its power device, device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20110810 Effective date of abandoning: 20120822 |