CN204538661U - A kind of for the overheating protection circuit in power management chip - Google Patents
A kind of for the overheating protection circuit in power management chip Download PDFInfo
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- CN204538661U CN204538661U CN201520154295.8U CN201520154295U CN204538661U CN 204538661 U CN204538661 U CN 204538661U CN 201520154295 U CN201520154295 U CN 201520154295U CN 204538661 U CN204538661 U CN 204538661U
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Abstract
The utility model relates to protective circuit technical field, especially a kind of for the overheating protection circuit in power management chip.It comprises the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the first triode, the first electric capacity, the first resistance and the second resistance.The utility model utilizes the negative temperature coefficient feature of triode base-emitter voltage, the control voltage of taking out with voltage linear change from band gap modular circuit provides biased to circuit, it is simple that this overheating protection circuit be used in battery management chip has structure, temperature control is high, closedown and open temp point affect less by power supply, the features such as chip area is little and low in energy consumption, switching threshold points is accurate, the temperature hysteresis change that can effectively suppress supply voltage to cause, sluggish scope is substantially constant, and there is good transplantability, be applicable to being applied and integrated in power management chip.
Description
Technical field
The utility model relates to protective circuit technical field, especially a kind of for the overheating protection circuit in power management chip.
Background technology
The temperature of power management chip often raises 2 DEG C, and security reliability just declines 10%, and power management chip working life when temperature raises 50 DEG C is temperature 1/6 when raising 25 DEG C.In order to protection power source managing chip, make it not damaged in the case of a high temperature, must arrange overheating protection circuit, when exceeding permissible value with convenient chip operating temperature, main power digital circuit cuts off by protective circuit.Existing protective circuit much based on the comparison device design, although there is higher temperature control, for protective circuit, its domain cost is excessive.And adopt the overheating protection circuit of BiCMOS technique, though circuit is comparatively simple, need a fixed bias circuit, chip area is still comparatively large, and power consumption does not also lower.Therefore, reduction chip area and power consumption remain the key issue of overheating protection circuit design.
Utility model content
For above-mentioned the deficiencies in the prior art, the purpose of this utility model be to provide a kind of structure simple, highly sensitive, close and open temp point by power supply affect less, chip area little and low in energy consumption for the overheating protection circuit in power management chip.
To achieve these goals, the utility model adopts following technical scheme:
For the overheating protection circuit in power management chip, it comprises the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor and the first triode;
The grid of described first metal-oxide-semiconductor connects bias voltage, drain electrode connects the collector electrode of described first triode and the grid of the 4th metal-oxide-semiconductor;
The grid of described second metal-oxide-semiconductor connects the grid of described first metal-oxide-semiconductor, the base stage of described first triode of drain electrode connection also connects the drain electrode of described 7th metal-oxide-semiconductor by the first resistance;
The output that the grid of described 3rd metal-oxide-semiconductor connects the grid of described 6th metal-oxide-semiconductor, grid also connects overheating protection circuit, drain electrode connect the drain electrode of described 6th metal-oxide-semiconductor and the grid of the 7th metal-oxide-semiconductor;
Grid, the drain electrode of described 5th metal-oxide-semiconductor of grid connection of described 4th metal-oxide-semiconductor connect the drain electrode of described 5th metal-oxide-semiconductor and the grid of the 6th metal-oxide-semiconductor;
The grid of described 5th metal-oxide-semiconductor connects the collector electrode of described first triode and grid, the source ground of the 4th metal-oxide-semiconductor;
The grid of described 6th metal-oxide-semiconductor connects output, the source ground of overheating protection circuit;
The grid of described 7th metal-oxide-semiconductor connect described 6th metal-oxide-semiconductor drain electrode, drain respectively by the first electric capacity and the second grounding through resistance, source ground.
The collector electrode of described first triode connects grid, the grounded emitter of the drain electrode of described first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
Owing to have employed such scheme; the utility model utilizes the negative temperature coefficient feature of triode base-emitter voltage; the control voltage of taking out with voltage linear change from band gap modular circuit provides biased to circuit; this overheating protection circuit has that structure is simple, temperature control is high, close and open temp point by power supply affect less, chip area is little and the feature such as low in energy consumption, be applicable to being integrated in power management chip.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail, but the multitude of different ways that the utility model can be defined by the claims and cover is implemented.
As shown in Figure 1, the present embodiment a kind of for the overheating protection circuit in power management chip, it comprises the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7 and the first triode Q1;
The grid of the first metal-oxide-semiconductor M1 connects bias voltage VBIAS, the collector electrode of drain electrode connection first triode Q1 and the grid of the 4th metal-oxide-semiconductor M4;
The grid of the second metal-oxide-semiconductor M2 connects the grid of the first metal-oxide-semiconductor M1, the base stage of drain electrode connection first triode Q1 connected the drain electrode of the 7th metal-oxide-semiconductor M7 by the first resistance R1;
The output terminals A 2 that the grid of the 3rd metal-oxide-semiconductor M3 connects the grid of the 6th metal-oxide-semiconductor M6, grid also connects overheating protection circuit, the drain electrode of drain electrode connection the 6th metal-oxide-semiconductor M6 and the grid of the 7th metal-oxide-semiconductor M7;
The grid of the 4th metal-oxide-semiconductor M4 connects the grid of the 5th metal-oxide-semiconductor M5, the drain electrode of drain electrode connection the 5th metal-oxide-semiconductor M5 and the grid of the 6th metal-oxide-semiconductor M6;
The grid of the 5th metal-oxide-semiconductor M5 connects the collector electrode of the first triode Q1 and grid, the source ground of the 4th metal-oxide-semiconductor M4;
The grid of the 6th metal-oxide-semiconductor M6 connects output terminals A 2, the source ground of overheating protection circuit;
The grid of the 7th metal-oxide-semiconductor M7 connect the 6th metal-oxide-semiconductor M6 drain electrode, drain respectively by the first electric capacity C1 and the second resistance R2 ground connection, source ground.
The collector electrode of the first triode Q1 connects grid, the grounded emitter of the drain electrode of the first metal-oxide-semiconductor M1 and the 4th metal-oxide-semiconductor M4.
Wherein, bias voltage VBIAS is the bias voltage taken out from band gap current reference, linearly changes with power supply, makes the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 to provide constant current.When chip normally works, B point voltage is lower than the cut-in voltage of Q1, and the first triode Q1 ends.A point exports as high level; the output terminals A 2 of overheating protection circuit exports as low level, now the 7th metal-oxide-semiconductor M7 conducting, and on the first resistance R1, electric current flows through the direct ground connection of the 7th metal-oxide-semiconductor M7; second resistance R2 (large resistance) does not almost have electric current to flow through, and circuit is in disarmed state.
When the temperature of power management chip rises; base-the emitter voltage of the first triode Q1 reduces; if when temperature is raised to threshold temperature (being set to 150 DEG C); first triode Q1 opens; at this moment, the output terminals A 2 of overheating protection circuit exports high level 150 DEG C time, and power management chip turns off; 7th metal-oxide-semiconductor M7 ends, and electric current I 1 flows through the first resistance R1 and the second resistance R2 to ground.If when temperature drops to sluggish open temp (being set to 130 DEG C), the output terminals A 2 of overheating protection circuit recovers low level, power management chip recovers normal work.
In addition, the first electric capacity C1, for the protection of the 7th metal-oxide-semiconductor M7, prevents C point voltage from being dragged down rapidly in the moment that sluggishness is opened.Thermal shutdown temperature and sluggish open temp do not rely on supply voltage; by controlling unlatching and the shutoff of the 7th metal-oxide-semiconductor M7; control the second resistance R2 whether to be shorted, achieve the hysteresis of overheating protection circuit, avoid circuit in the unlatching repeatedly of a certain temperature spot and shutoff.
The present embodiment utilizes the negative temperature coefficient feature of triode base-emitter voltage, the control voltage of taking out with voltage linear change from band gap modular circuit provides biased to circuit, it is simple that this overheating protection circuit be used in battery management chip has structure, temperature control is high, closedown and open temp point affect less by power supply, the features such as chip area is little and low in energy consumption, switching threshold points is accurate, the temperature hysteresis change that can effectively suppress supply voltage to cause, sluggish scope is substantially constant, and there is good transplantability, be applicable to being applied and integrated in power management chip.
The foregoing is only preferred embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (1)
1. for the overheating protection circuit in power management chip, it is characterized in that: it comprises the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor and the first triode;
The grid of described first metal-oxide-semiconductor connects bias voltage, drain electrode connects the collector electrode of described first triode and the grid of the 4th metal-oxide-semiconductor;
The grid of described second metal-oxide-semiconductor connects the grid of described first metal-oxide-semiconductor, the base stage of described first triode of drain electrode connection also connects the drain electrode of described 7th metal-oxide-semiconductor by the first resistance;
The output that the grid of described 3rd metal-oxide-semiconductor connects the grid of described 6th metal-oxide-semiconductor, grid also connects overheating protection circuit, drain electrode connect the drain electrode of described 6th metal-oxide-semiconductor and the grid of the 7th metal-oxide-semiconductor;
Grid, the drain electrode of described 5th metal-oxide-semiconductor of grid connection of described 4th metal-oxide-semiconductor connect the drain electrode of described 5th metal-oxide-semiconductor and the grid of the 6th metal-oxide-semiconductor;
The grid of described 5th metal-oxide-semiconductor connects the collector electrode of described first triode and grid, the source ground of the 4th metal-oxide-semiconductor;
The grid of described 6th metal-oxide-semiconductor connects output, the source ground of overheating protection circuit;
The grid of described 7th metal-oxide-semiconductor connect described 6th metal-oxide-semiconductor drain electrode, drain respectively by the first electric capacity and the second grounding through resistance, source ground;
The collector electrode of described first triode connects grid, the grounded emitter of the drain electrode of described first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520154295.8U CN204538661U (en) | 2015-03-18 | 2015-03-18 | A kind of for the overheating protection circuit in power management chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520154295.8U CN204538661U (en) | 2015-03-18 | 2015-03-18 | A kind of for the overheating protection circuit in power management chip |
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| Publication Number | Publication Date |
|---|---|
| CN204538661U true CN204538661U (en) | 2015-08-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520154295.8U Expired - Fee Related CN204538661U (en) | 2015-03-18 | 2015-03-18 | A kind of for the overheating protection circuit in power management chip |
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| CN (1) | CN204538661U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109347063A (en) * | 2018-11-30 | 2019-02-15 | 武汉精能电子技术有限公司 | A kind of power device overheating detection protection circuit |
-
2015
- 2015-03-18 CN CN201520154295.8U patent/CN204538661U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109347063A (en) * | 2018-11-30 | 2019-02-15 | 武汉精能电子技术有限公司 | A kind of power device overheating detection protection circuit |
| CN109347063B (en) * | 2018-11-30 | 2024-03-15 | 武汉精能电子技术有限公司 | Overheat detection protection circuit of power device |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 274000 Ji'nan Road, Heze Development Zone, Shandong, No. 999 Patentee after: Shandong Mingda electric appliance Limited by Share Ltd Address before: 274000 Ji'nan Road, Heze Development Zone, Shandong, No. 999 Patentee before: Shandong Ming great Electrical Appliances Co., Ltd |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150805 Termination date: 20200318 |
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| CF01 | Termination of patent right due to non-payment of annual fee |