CN201927595U - Miniature radiator - Google Patents
Miniature radiator Download PDFInfo
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- CN201927595U CN201927595U CN 200920283488 CN200920283488U CN201927595U CN 201927595 U CN201927595 U CN 201927595U CN 200920283488 CN200920283488 CN 200920283488 CN 200920283488 U CN200920283488 U CN 200920283488U CN 201927595 U CN201927595 U CN 201927595U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The utility model discloses a miniature radiator, which comprises a carbon nanotube array and a metal anchor area. A carbon nanotube array end face perpendicular to carbon nanotubes contacts with the metal anchor area, a metal infiltration layer infiltrating the carbon nanotube array end face is arranged on the surface of the metal anchor area in contact with the carbon nanotubes, the metal infiltration layer and the carbon nanotube array react with each other to generate a metal carbide between the metal infiltration layer and the carbon nanotube array. The metal carbide is formed between the metal infiltration area and the carbon nanotube tube array by reaction, so that better transitional crystal structure is formed between the metal infiltration layer and the carbon nanotube array, scattering of hot carriers such as phonons, electrons and the like can be reduced by the aid of the transitional crystal structure compared with an infiltrated interface between the metal infiltration layer and the carbon nanotube array, and contact thermal resistance between the carbon nanotubes and a heat source is reduced further.
Description
Technical field
The utility model relates to a kind of radiator, relates in particular to a kind of minitype radiator.
Background technology
Owing in very little space, carry out calculation process during integrated circuit (IC) chip work, will produce considerable heat, therefore the heat that is produced must shed by suitable mode, avoiding integrated circuit (IC) chip, even cause the damage of hardware circuit when serious because of the overheated calculation process mistake that causes.Therefore, the heat dissipation problem in the encapsulation is just crucial all the more.Along with semiconductor integrated circuit is updated, developed, when its function improved constantly, volume constantly reduced, and dense degree constantly increases, and package dimension also constantly diminishes.
Adopt leave heat in the microprocessor of metal heat sink or heat pipe, obtained effect preferably.Yet existing radiator, as heat dissipation metal fin, heat pipe etc., volume is bigger, causes the volume of whole packaging body to increase easily, is difficult to adapt to the demand for requiring littler encapsulation volume occasion.Therefore it is littler to press for a kind of encapsulation volume, the radiator that radiating efficiency is higher.
The transmission of electric current is usually by quantum tunneling effect, and is lower for the required distance that transmits between the medium; And being delivered in the carbon nano-tube of heat usually mainly by the phonon transmission.Carbon nano-tube has high thermal (thermal conductivity of the carbon nano-tube that defective is less is expected to reach more than the 3000W/m.k), prior art is plated metal catalyst (iron on the growth sheet, cobalt, nickel, simultaneously as the catalyst of carbon nano tube growth) grow carbon nano pipe array, be used as the carbon nano-tube that grows heat sink simultaneously, yet because the mechanical strength that combines between carbon nano pipe array and the metallic catalyst is lower, thereby carbon nano pipe array is difficult to directly use as radiator in fact, on the other hand, because more weak combination causes higher contact heat resistance simultaneously, make the heat of thermal source be difficult to be delivered to carbon nano-pipe array and list by the growth sheet; Prior art also uses polymer or solder flux that carbon nano-tube is fixed on the substrate, yet the thermal conductivity of polymer is lower, causes interface resistance higher; Solder flux often is carbonized easily in heating process and forms one deck agraphitic carbon, has increased interface resistance greatly, lists thereby make the heat of thermal source can't be delivered to carbon nano-pipe array; When being the fluid heat exchange, carbon nano-tube breaks away from the growth sheet easily.
Summary of the invention
The utility model provides the carbon nano pipe array that a kind of volume is little, radiating efficiency is high, interface resistance is little minitype radiator.
The following technical scheme of employing of the present utility model: a kind of minitype radiator, comprise carbon nano pipe array, metal anchors district, the carbon nano pipe array end face vertical with carbon nano-tube contacts with the metal anchors district, and the surface that contacts with carbon nano-tube in the metal anchors district is provided with the metal infiltrating layer wetting with the carbon nano pipe array end face.
In the technique scheme, metal infiltrating layer is a kind of in titanium, tungsten, aluminium or the chromium; For further reducing the interface resistance between metal infiltrating layer and the carbon nano-tube, have metal carbides between described metal infiltrating layer and the carbon nano-tube.The another one surface in metal anchors district is the gold floor.Described metal infiltrating layer is a tungsten, and described metal carbides correspond to tungsten carbide.Described metal infiltrating layer is a titanium, and described metal carbides correspond to titanium carbide.The thickness of described metal infiltrating layer is the 0.01-0.3 micron.The thickness 0.05-0.1 micron of described metal infiltrating layer.Described metal anchors district comprises nickel dam and gold floor, and the thickness of nickel dam is 0.05 micron-0.3 micron, and golden layer thickness is 0.02 micron-0.4 micron, wherein nickel dam and metal infiltrating layer adjacency.
The utility model obtains following technique effect:
1. the utility model is because thereby carbon nano-tube has less size and makes that the size of last radiator integral is less; Carbon nano pipe array has bigger specific area and high thermal conductivity makes it have the high characteristics of radiating efficiency.Producing bigger scattering at the interface because phonon or electronics are hot carrier, this scattering increases along with the increase of interface mismatch degree, thereby causes contact heat resistance to become big.The utility model adopts metal infiltrating layer owing to have good wetting property with carbon nano-tube on the interface of an end face of metal anchors district and carbon nano pipe array, make that this interface has better matching property and contact area is bigger, thereby this radiator have lower interface contact heat resistance and good heat-conducting.The another side in metal anchors district contacts with thermal source.Adopt the metal anchors district to cooperate to make to produce better thermo-contact between carbon nano pipe array and the thermal source, make contact heat resistance less, thereby heat more can be transmitted to carbon nano-pipe array fast and lists with metal infiltrating layer.Utilize the heat exchange effect of microfluid and carbon nano-tube to take away heat then.
2. the utility model forms metal carbides by reaction between metal infiltrating layer and carbon nano-tube, thereby make and have better transitional crystal structure between metal infiltrating layer and the carbon nano-tube, compare with the interface between the carbon nano-tube with the metal infiltrating layer of wetting state, can and then further reduce the scattering of hot carriers such as phonon and electronics, thereby further reduce the contact heat resistance between carbon nano-tube and the thermal source.
3. the metal infiltrating layer selected for use of the utility model comprises titanium, tungsten, aluminium or chromium, and they have and carbon nano-tube wetability preferably, have the ability that forms carbide with the carbon nano-tube reaction simultaneously.Wherein tungsten is best as the wetting effect of metal infiltrating layer and carbon nano pipe array, can effectively reduce thermal resistance.In addition, form in reaction under the condition of carbide, the speed that forms tungsten carbide is slower, and reaction forms the easiest control of thickness of carbide, be unlikely to cause causing the interface mismatch, and then cause bigger interface resistance with the disengaging of metal anchors district because of the full consumption of carbide.In addition, the conductive coefficient maximum of tungsten carbide be 121W/m.k, and titanium carbide has only 31.8W/m.k, thereby with respect to other metal carbides, also minimum by the thermal resistance that the material tungsten carbide causes itself.
4. the thickness of control metal infiltrating layer is the 0.01-0.3 micron.Thickness is big more, and the thermal resistance that material itself causes is high more.But be difficult to guarantee that thickness is even during owing to plated metal, part metal even deposition enter carbon nano pipe array inside, if therefore deposit thickness is too little, metal is difficult to the end of carbon nano pipe array is all covered, and is unfavorable for utilizing the contact heat resistance of soaking into metal reduction carbon nano pipe array and thermal source.
5. the utility model utilizes the metal anchors district that carbon nano pipe array is carried out mechanical fixation, because the metal anchors district itself is the higher material of thermal conductivity, thereby the thermal resistance that causes is lower.In addition, the metal anchors district also contacts with thermal source, so the surface in metal anchors district should have oxidation resistant effect.The gold floor in metal anchors district has best oxidation resistant effect, thereby has avoided using other metals to cause forming oxide and increase extra thermal resistance.In addition, when using low-melting-point metal that minitype radiator of the present utility model is installed on the thermal source surface, the use of gold layer can be so that avoid because of using scaling powder to form pollution when installing.The metal anchors district contacts with metal infiltrating layer contains nickel dam, at gold layer by low-melting-point metal such as ashbury metal (such as SAC alloy, the trade mark is SAC305) consume after, can have slower reaction speed with low-melting-point metal, thereby avoid causing low-melting-point metal to be peeled off from carbon nano tube surface because of reaction speed is too fast.
6. the utility model carbon nano-tube that radiator uses and metal anchors district all are highly heat-conductive materials, thereby radiating effect is better.
Description of drawings
Fig. 1 the utility model structural representation
Fig. 2 the utlity model has the structural representation of the carbide lamella of reaction formation
Fig. 3 reaction of the present utility model forms the XRD figure (small-angle diffraction, slow scanning) behind the carbide
Embodiment
A kind of minitype radiator, comprise carbon nano pipe array 4, metal anchors district 1, carbon nano pipe array 4 end faces vertical with carbon nano-tube contact with metal anchors district 1, and the surface that contacts with carbon nano-tube in the metal anchors district is provided with the metal infiltrating layer 2 wetting with the carbon nano pipe array end face.
In the technique scheme, metal infiltrating layer is a kind of in titanium, tungsten or the chromium, and the wetability of these metals and carbon nano pipe array end face is better.For further reducing the interface resistance between metal infiltrating layer and the carbon nano pipe array end face, have metal carbides 3 between described metal infiltrating layer and the carbon nano-tube.Vertical average length of carbon nano-tube is the 1-200 micron in the carbon nano pipe array, for example can be chosen for: 1 micron, and 10 microns, 25 microns, 40 microns, 50 microns, 75 microns, 90 microns, 100 microns, 115 microns, 120 microns, 150 microns, 165 microns, 170 microns, 180 microns, 190 microns, 195 microns, can be single wall or the multi-walled carbon nano-tubes more than two walls; Described metal infiltrating layer is a tungsten, and described metal carbides correspond to tungsten carbide.Described metal infiltrating layer is a titanium, and described metal carbides correspond to titanium carbide.The thickness of described metal infiltrating layer is the 0.01-0.3 micron, for example can be chosen for 0.02 micron, 0.04 micron, and 0.05 micron, 0.08 micron, 0.1 micron, 0.15 micron, 0.2 micron.The thickness 0.05-0.1 micron of described metal infiltrating layer.Described metal anchors district comprises nickel dam and gold floor 5, and the thickness of nickel dam is 0.05 micron-0.3 micron, and nickel layer thickness can be chosen for: 0.08 micron, 0.10 micron, 0.15 micron, 0.2 micron, 0.25 micron, golden layer thickness is 0.02 micron-0.4 micron, for example can be chosen for 0.03 micron, 0.05 micron, 0.08 micron, 0.10 micron, 0.15 micron, 0.2 micron, 0.25 micron, 0.3 micron, 0.35 micron, wherein nickel dam and metal infiltrating layer adjacency.The metal anchors district also comprises low-melting-point metal, low-melting-point metal and gold layer 5 adjacency.Low-melting-point metal can be an ashbury metal, and bismuth alloy etc., low-melting-point metal are SAC, and for example the trade mark is the alloy of SAC305, can be the Bi58Sn42 alloy.In each floor in anchor district, can also copper, metal such as smooth between metal infiltrating layer and the gold layer, thickness is 0.05 micron-0.3 micron.In use, at first, carbon nano tube array grows on the growth sheet, then in carbon nano-tube free end face plated metal anchor district, at first deposit and the wetting metal of carbon nano pipe array end face, as titanium, aluminium, a kind of in the tungsten, and then deposit other metal level, nickel dam for example, the gold layer, that nickel dam is used for is wetting with low-melting-point metal (low-melting-point metal is to use when being used to be connected the metal anchors district of carbon nano pipe array and chip when carbon nano-tube is installed on chip), thereby having slower reaction speed, while nickel dam and low-melting-point metal make the interface be unlikely to the layering that runs out because of the wetting layer nickel dam, and the gold layer is used for antioxidation, and is easy to connect when interconnecting with low-melting-point metal.For example at first at the titanium of carbon nano pipe array surface deposition 100 nanometers, deposit the nickel of 200 nanometers and the gold layer of 200 nanometers then successively, wherein the gold layer is as the anti oxidation layer that is connected with other metal.Above-mentioned carbon nano-tube radiator is placed in the stove of vacuum or nitrogen or hydrogen shield and is heated to 900 degrees centigrade, be incubated 5 hours.Perhaps, above-mentioned carbon nano-tube radiator is placed in the microwave heats, the power of microwave is 500W, and frequency is 6GHz, and the processing time is 400 seconds, all can heat-treat above-mentioned carbon nano-tube radiator and form described carbide.Microwave Treatment is handled the high temperature about carbon nano-tube can reach more than 1000 degrees centigrade, can obviously observe dazzling light tone when handling.Handle the back and with X ray the small-angle diffraction analysis is carried out on its surface, the result shows and has generated carbide (titanium carbide, tungsten carbide, aluminium carbide).The XRD diffracting spectrum of sample shown in the drawings shows the formation that the titanium carbide crystal structure is arranged.The formation of titanium carbide makes that transition region has formed transitional crystal structure (titanium carbide crystal) between carbon nano pipe array and the metal anchors district, thereby with respect to the space, the phon scattering of interface heat conduction has obtained great reduction, thereby interface resistance has obtained reducing greatly.2 one kinds of minitype radiators of embodiment, comprise carbon nano pipe array 4, metal infiltrating layer 2 and metal anchors district 1, metal infiltrating layer 2 is between the end face and metal anchors district 1 of carbon nano pipe array 4, metal infiltrating layer 2 and carbon nano pipe array soak into and contact, and are connected by chemical bond between metal infiltrating layer 2 and the metal anchors district 1.In the technique scheme, the average length of carbon nano-tube is 150 microns in the carbon nano pipe array, and metal infiltrating layer is a chromium, and thickness is 100nm, and the nickel dam that is of titanium is pressed close in the metal anchors district, and thickness is 200nm, is gold layer 5 then, and thickness is 200nm.In use, carbon nano tube array grows on the growth sheet then at carbon nano-tube free end plated metal, at first deposits the titanium of 100 nanometers, deposit the nickel of 200 nanometers and the gold layer 5 of 200 nanometers then successively, wherein the gold layer is as the anti oxidation layer that is connected with other metal.Then above-mentioned carbon nano-tube radiator is placed in the stove of vacuum, nitrogen or hydrogen shield and is heated to 1000 degrees centigrade, be incubated 5 hours.Or above-mentioned carbon nano-tube radiator is placed in the microwave heats, the power of microwave is 500W, and frequency is 6GHz, and the processing time is 200 wonderful, can heat-treat above-mentioned carbon nano-tube radiator and form described carbide.Microwave Treatment is handled the high temperature about carbon nano-tube can reach more than 1000 degrees centigrade, can obviously observe high light tone when handling.So finish heat treatment.
When using above-mentioned carbon nano-tube radiator, can be with above-mentioned carbon nano-tube radiator by low-melting-point metal, SnAgCu alloy, BiSn alloy are selected SAC305 here for use, it is welded to the surface of silicon, and wherein silicon face can titanium deposition, nickel, gold is connected with silicon in order to form.
Embodiment 2
A kind of minitype radiator, comprise carbon nano pipe array 4, metal infiltrating layer 2 and metal anchors district 1, metal infiltrating layer 2 is between the end face and metal anchors district 1 of carbon nano pipe array 4, metal infiltrating layer and carbon nano pipe array soak into and contact, and are connected by chemical bond between metal infiltrating layer and the metal anchors district.
In the technique scheme, the average length of carbon nano-tube is 50 microns in the carbon nano pipe array, and metal infiltrating layer is a titanium, and thickness is 100nm, and the nickel dam that is of titanium is pressed close in the metal anchors district, and thickness is 200nm, is gold layer 5 then, and thickness is 200nm.In use, at first, carbon nano tube array grows on the growth sheet, then at carbon nano-tube free end plated metal, at first deposit the titanium of 100 nanometers, deposit the nickel of 200 nanometers and the gold layer of 200 nanometers then successively, wherein the gold layer is as the anti oxidation layer that is connected with other metal.
Then above-mentioned minitype radiator is placed in the stove of vacuum or nitrogen or hydrogen shield and is heated to 900 degrees centigrade, be incubated 5 hours.Perhaps, above-mentioned carbon nano-tube radiator is placed in the microwave heats, the power of microwave is 500W, and frequency is 6GHz, and the processing time is 200 wonderful, all can heat-treat above-mentioned carbon nano-tube radiator and form described carbide.Also can select the high temperature about Microwave Treatment processing carbon nano-tube can reach more than 1000 degrees centigrade for use, when handling, can obviously observe high light tone.So finish heat treatment.
When using above-mentioned carbon nano-tube radiator, can be with above-mentioned miniature hot device by low-melting-point metal, SnAgCu alloy, BiSn alloy are selected SAC305 here for use, it is welded to the surface of silicon, and wherein silicon face can titanium deposition, nickel, gold is connected with silicon in order to form.
Embodiment 3
A kind of minitype radiator, comprise carbon nano pipe array 4, metal infiltrating layer 2 and metal anchors district 1, metal infiltrating layer is between the end face and metal anchors district of carbon nano pipe array, and metal infiltrating layer and carbon nano pipe array soak into and contact, and is connected by chemical bond between metal infiltrating layer and the metal anchors district.
In the technique scheme, the average length of carbon nano-tube is 20 microns in the carbon nano pipe array, and metal infiltrating layer is a tungsten, and thickness is 100nm, and the nickel dam that is of titanium is pressed close in the metal anchors district, and thickness is 200nm, is the gold layer then, and thickness is 200nm.In use, at first, carbon nano tube array grows on the growth sheet, then at carbon nano-tube free end plated metal, at first deposit the titanium of 100 nanometers, deposit the nickel of 200 nanometers and the gold layer of 200 nanometers then successively, wherein the gold layer is as the anti oxidation layer that is connected with other metal.
Then above-mentioned carbon nano-tube radiator is placed in the stove of vacuum or nitrogen or hydrogen shield and is heated to 900 degrees centigrade, be incubated 5 hours.Perhaps, above-mentioned carbon nano-tube radiator is placed in the microwave heats, the power of microwave is 500W, and frequency is 6GHz, and the processing time is 200 wonderful, all can heat-treat above-mentioned carbon nano-tube radiator and form described carbide.Also can select the high temperature about Microwave Treatment processing carbon nano-tube can reach more than 1000 degrees centigrade for use, when handling, can obviously observe high light tone.So finish heat treatment.
When using above-mentioned carbon nano-tube radiator, can be with above-mentioned carbon nano-tube radiator by low-melting-point metal, SnAgCu alloy, BiSn alloy are selected SAC305 here for use, and it is welded to logical surface, and wherein the copper surface needs use scaling powder, with the removing oxide.
The carbon nano pipe array sample preparation:
The utility model carbon nano-pipe array is classified one or more in single wall, double-walled or the array of multi-walled carbon nanotubes as.Described carbon nano pipe array can be used chemical vapour deposition technique, specifically may further comprise the steps: a smooth substrate at first is provided, and this substrate can be selected P type or N type silicon substrate for use, or selects for use the silicon substrate that is formed with oxide layer, present embodiment to select 1 square centimeter of silicon substrate for use; Then, evenly form one deck catalyst layer at substrate surface, catalyst material can be selected one of alloy of iron, cobalt, nickel or its combination in any for use; Again the above-mentioned substrate that is formed with catalyst layer was annealed 30-90 minute in 700-900 degree centigrade air; The substrate of handling is placed reacting furnace, be heated to 500-740 degree centigrade under the protective gas environment, feed carbon-source gas reaction about 5-30 minute then, growth obtains carbon nano pipe array, and it highly is the 1-200 micron.The big I of its length is controlled by the length of reaction time control.Carbon nano-tube in this carbon nano pipe array closely contacts the formation array by Van der Waals force each other.Among the embodiment, carbon-source gas can be selected the compounds of being on home leave such as acetylene, ethene, methane for use, preferred acetylene, and protective gas is nitrogen or inert gas, the preferred protective gas of present embodiment is an argon gas.Use ESEM that described carbon nano pipe array is characterized, about 40 microns of the length of multi-walled carbon nano-tubes, the scope that is fit to the utility model use is at the 1-200 micron.This length can make that radiator has smaller volume, has bigger surface area simultaneously.
It is specific as follows that PECVD prepares the carbon nano-tube method:
PECVD system: plasma source (plasma reactor of heated filament, microwave and inductance coupling high that DC, radio frequency, DC assist), the network of coupling, other energy coupling composition, mass flow controller and one or more vacuum pumps.
At first the nickel dam that sputter 7nm is thick on silicon base is put into reactor as catalyst with substrate, and system is evacuated to 10
-5Torr or more low-pressure remove impurity and water vapour; Substrate is heated to predetermined temperature (900 ℃), feeds carbon source (hydrocarbon), gas flow rate and chamber pressure (1-20Torr) are set respectively by choke valve; Apply energy make its coupling produce plasma flow (with the DC plasma reactor is example, and the DC plasma reactor is made of the pair of electrodes in the grounded chamber, one of them electrode grounding, another electrode links to each other with power supply.On negative electrode, apply negative Dc bias and puncture feed gas, glow discharge takes place and produce electronics, cation and anion, atom and free radical.Wherein in electron temperature 1～10eV scope, ion temperature is about 0.5eV; Electrode gap d is by pressure and the decision of given bias voltage), and clean with argon gas, question response device heat is but taken out substrate to back below 300 ℃.
Carbon nano tube growth mechanism: the group of high reaction activity and hydrocarbon discharge hydrogen wherein, and the breaking portion carbon bond, thereby form carbon nano tube structure at the catalyst particle surface aggregation.Hydrocarbon has a large amount of carbon atom bunch (fragment of C2～C8) and ring-type carbon atom bunch in the carbon vapor under the effect of plasma.In the growth course of nanotube, the initial configuration of the carbon atom of this ring-type bunch has determined the structure of the carbon nano-tube that forms the most at last.In order to form cylinder, the carbon atom number of monocycle must be an even number.If the carbon atom number of initial monocycle is an odd number, what then form is taper seat, and wherein part forms the polyhedron carbon particulate or has very large diameter carbon nano-tube.In the forming process of subsequently carbon nano-tube, at first be that carbon atom gathers and is incorporated on a certain ring-type carbon atom bunch, generate two ends and have the mono-layer tube that unsettled (unsaturated) key and bond angle are approximately 120 ° weak point.At last, the gathering by carbon atom bunch generates multilayer carbon nanotube rapidly, and the surface of the carbon nano-tube of this moment has weak resonance effects.In the growth course of carbon nano-tube, when the hexatomic ring in the carbon nano tube network with layer structure deforms and forms five-membered ring, just formed the blind end of hat at an end of carbon nano-tube.At last, under hot conditions,, formation had the more stable crystal fine particle that is similar to onion if bulk deformation takes place final formed carbon nano-tube.
When using above-mentioned carbon nano-tube radiator, can be with above-mentioned miniature hot device by low-melting-point metal, SnAgCu alloy, BiSn alloy are selected SAC305 here for use, it is welded to the surface of silicon, and wherein silicon face can titanium deposition, nickel, gold is used for silicon and connects.
Claims (9)
1. minitype radiator, it is characterized in that, comprise carbon nano pipe array (4), metal anchors district (1), carbon nano pipe array (4) end face vertical with carbon nano-tube contacts with metal anchors district (1), and the surface that contacts with carbon nano-tube in the metal anchors district is provided with and the wetting metal infiltrating layer (2) of carbon nano pipe array (4) end face.
2. minitype radiator according to claim 1 is characterized in that the another one surface in metal anchors district is gold floor (5).
3. minitype radiator according to claim 1 and 2 is characterized in that, has metal carbides (3) between described metal infiltrating layer and the carbon nano-tube.
4. minitype radiator according to claim 1 is characterized in that, described metal infiltrating layer is a kind of in titanium, tungsten, aluminium or the chromium.
5. minitype radiator according to claim 3 is characterized in that, described metal infiltrating layer is a tungsten, and described metal carbides correspond to tungsten carbide.
6. minitype radiator according to claim 3 is characterized in that, described metal infiltrating layer is a titanium, and described metal carbides correspond to titanium carbide.
7. minitype radiator according to claim 3 is characterized in that, the thickness of described metal infiltrating layer is the 0.01-0.3 micron.
8. minitype radiator according to claim 7 is characterized in that, the thickness 0.05-0.1 micron of described metal infiltrating layer.
9. minitype radiator according to claim 1 and 2 is characterized in that, described metal anchors district also comprises nickel dam and gold floor, and the thickness of nickel dam is 0.05 micron-0.3 micron, and golden layer thickness is 0.02 micron-0.4 micron, wherein nickel dam and metal infiltrating layer adjacency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920283488 CN201927595U (en) | 2009-12-18 | 2009-12-18 | Miniature radiator |
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| CN 200920283488 CN201927595U (en) | 2009-12-18 | 2009-12-18 | Miniature radiator |
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| CN201927595U true CN201927595U (en) | 2011-08-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018134245A1 (en) * | 2017-01-19 | 2018-07-26 | Cambridge Enterprise Limited | Carbon nanotube material, method for production and treatment of the same |
| CN108987361A (en) * | 2018-07-27 | 2018-12-11 | 东莞大联社电子散热材料有限公司 | Integrated carbon nanotubes cooling fin and production method |
| CN112239651A (en) * | 2020-09-15 | 2021-01-19 | 深圳烯湾科技有限公司 | Carbon nano tube heat conducting sheet and preparation method thereof |
-
2009
- 2009-12-18 CN CN 200920283488 patent/CN201927595U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018134245A1 (en) * | 2017-01-19 | 2018-07-26 | Cambridge Enterprise Limited | Carbon nanotube material, method for production and treatment of the same |
| CN108987361A (en) * | 2018-07-27 | 2018-12-11 | 东莞大联社电子散热材料有限公司 | Integrated carbon nanotubes cooling fin and production method |
| CN112239651A (en) * | 2020-09-15 | 2021-01-19 | 深圳烯湾科技有限公司 | Carbon nano tube heat conducting sheet and preparation method thereof |
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Granted publication date: 20110810 Termination date: 20131218 |