CN201927490U - Light positive pole structure of dye sensitization solar battery - Google Patents
Light positive pole structure of dye sensitization solar battery Download PDFInfo
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- CN201927490U CN201927490U CN 201020651194 CN201020651194U CN201927490U CN 201927490 U CN201927490 U CN 201927490U CN 201020651194 CN201020651194 CN 201020651194 CN 201020651194 U CN201020651194 U CN 201020651194U CN 201927490 U CN201927490 U CN 201927490U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model discloses a light positive pole structure of a dye sensitization solar battery. The light positive pole structure comprises an electric conduction base plate, wherein the electric conduction base plate is covered with a conduction film, the conduction film is covered with a compact semiconductor bottom layer, the compact semiconductor bottom layer is provided with a semiconductor film, the semiconductor film is internally provided with a multi-hole cylindrical object which is formed by stacking a plurality of nanometer particles arranged sequentially, each cylindrical object comprises a fork-shaped pore, and each fork-shaped pore comprises a through hole and an inclined hole, wherein each through hole is vertical to the electric conduction base plate. In the structure, the light positive pole is compact and in order and has big superficial area to adsorb more mediums, more transmission channels for the mediums can be supplied, thereby the light positive pole structure is beneficial to the mass transfer of the electrolyte, and the photoelectricity conversion efficiency of the dye sensitization solar battery can be improved. The nanometer pillars in ordered arrangement are relatively independent, the nanometer particles in the column-shaped structure are connected compactly, the charge transmission path is short, and the electric resistance is low. The propagation path of the light in the film is long, the scatter is great, and the absorbed efficiency is increased.
Description
Technical field
The utility model belongs to technical field of solar batteries, relates to a kind of light anode construction of DSSC.
Background technology
The semiconductor optical anode of dye-sensitized solar cells relies on the high surface area of electrode material and participates in interfacial reaction, produces electronics, by interconnecting reduction resistance between the particle, reduces the electron transport loss.Simultaneously, the semiconductor optical anode of battery by dye sensitization after, contact with electrolyte and could form the loop, continue to produce electric current.This requires the light anode that high surface area should be arranged, suitably contact again between the particle, and pore structure links up simultaneously, helps electrolytical migration.This class electrode mostly is nano-crystal film at present, the advantage of nano-crystal film is that porosity height, surface area are big, the absorbing dye amount is big, electrolyte exchange channel is unimpeded, preparation technology is simple, and its drawback is that the nano particle arrangement is unordered, and it is poor to connect degree each other, gathering taking place easily and become the electron recombination center, is unfavorable for the transmission of electronics.
The pore structure that Chinese patent (application number 201020156486.5) discloses a kind of nano-crystal film is the light anode construction of the shape of diverging, and this structure is when the connection degree is improved between nano particle, hole connective good, and electrolytical migration is smooth and easy.But the transmission path of electric charge is longer relatively in whole layer nano-crystal film, and the scattering of light in film and absorption also are difficult to control.
Summary of the invention
The purpose of this utility model provides a kind of light anode construction of DSSC, the charge transfer path that has solved existing nano-crystal film existence is longer relatively, the scattering of light in film and the unmanageable problem of absorption, improve the absorption efficiency of light, helped to improve the electricity conversion of battery.
The technical scheme that the utility model adopted is, a kind of light anode construction of DSSC, comprise electrically-conductive backing plate, on electrically-conductive backing plate, be coated with conducting film, be coated with the fine and close semiconductor underlayer of fine and close semiconductor underlayer on the conducting film and be provided with semiconductor film, what be provided with a plurality of orderly arrangements in the semiconductor film piles up the porous column that forms by nano particle, comprise the hole that diverges shape in each column, each fork shape hole comprises through hole and inclined hole composition, and wherein each through hole is vertical with electrically-conductive backing plate.
The beneficial effects of the utility model are, the light anode is in order compact, and surface area is big, can adsorb more multimedium, can provide more transmission channel for medium, helps the electrolyte mass transfer, improve the electricity conversion of dye-sensitized cell; The nano-pillar of arranging is relatively independent in order, and the nano particle in the column structure connects closely, and charge transfer path is short, and resistance is low; The nano-pillar of arranging in order in the light anode construction has the characteristic size that is similar to visible wavelength, and the propagation path of light in film is long, and scattering is big, is absorbed efficient and improves.
Description of drawings
Fig. 1 is a smooth anode construction sectional schematic diagram of the present utility model;
Fig. 2 is the plan structure schematic diagram of Fig. 1.
Among the figure, 1. conducting film, 2. fine and close semiconductor underlayer, 3. through hole, 4. inclined hole, 5. semiconductor film, 6. column.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is elaborated.
As Fig. 1, Fig. 2, the light anode construction of DSSC of the present utility model is, comprise the electrically-conductive backing plate that is coated with conducting film 1, be coated with fine and close semiconductor underlayer 2 on the conducting film 1, the thickness of fine and close semiconductor underlayer 2 is 20nm-50nm, fine and close semiconductor underlayer 2 is provided with semiconductor film 5, what be provided with a plurality of orderly arrangements among the semiconductor film 5 piles up the column 6 of the porous that forms by nano particle, each column 6 is all vertical with fine and close semiconductor underlayer 2, and the diameter of each column 6 is 0.5 μ m-5 μ m.The hole that is comprised in the column 6 is fork shape and distributes, and comprises the through hole 3 and the inclined hole on every side 4 in axle center, and through hole 3 is vertical with electrically-conductive backing plate.
Each through hole 3 upwards penetrates semiconductor film 5, and the inclined hole 4 of the superiors upwards penetrates semiconductor film 5, and the diameter of through hole 3 is 0.2 μ m-2 μ m, and the diameter of inclined hole 4 is 0.1 μ m-1 μ m.
Electrically-conductive backing plate is selected a kind of or composition of polymer, clear glass, metal (as copper, aluminium etc.) for use.
The principle of smooth anode construction of the present utility model is: for dye-sensitized solar cells, after being adsorbed on the dye molecule absorption luminous energy on the semiconductor particle, electron excitation is injected into the semiconductor conduction band, the hole is stayed in the dyestuff, the dyestuff of oxidation state is reduced by electrolyte, the electrolyte of oxidation state need be reduced in that electrode is accepted electronics, forms the loop.So in the light anode construction, semiconductor particle need adsorb enough dye molecules and electrolyte; Simultaneously, need to shorten the transmission distance of electric charge in film, reduce the electron transport loss; Improve the scattering of light in film in addition and absorb the electricity conversion that also helps to improve battery.The utility model is at this link of the scattering of sunlight in semiconductive thin film, run into the thought that the barrier scattering close with its wavelength increases based on light, proposed in the light anode construction of DSSC, porous semiconductor film is made of the nano-pillar of orderly arrangement, the characteristic size and the wavelength of visible light of nano-pillar are close, increase the scattering of light in film, improve the electricity conversion of battery; Each nano-pillar nano particle is piled up and is formed simultaneously, and its internal void is fork shape, and through hole is vertical with electrically-conductive backing plate, shortens the transmission path of electrolytical migration and electric charge.
The utility model has the advantage of: the scattering of light in semiconductive thin film is big, and propagation path is long, can improve the efficient that is absorbed of light; Adopt columnar arrays light anode construction, each nano-pillar is relatively independent, and the transmission path of electronics in electrode material is short, and resistance is little; The pore communication of semiconductor film is good, and the transmission path of electrolytical migration and electric charge is short, is conducive to the electrolyte mass transfer, improves the electricity conversion of dye-sensitized cell.
Claims (5)
1. the light anode construction of a DSSC, comprise electrically-conductive backing plate, it is characterized in that: on electrically-conductive backing plate, be coated with conducting film (1), be coated with fine and close semiconductor underlayer (2) on the conducting film (1), fine and close semiconductor underlayer (2) is provided with semiconductor film (5), what be provided with a plurality of orderly arrangements in the semiconductor film (5) piles up the porous column (6) that forms by nano particle, each column comprises the hole that diverges shape in (6), each fork shape hole comprises through hole (3) and inclined hole (4) composition, and wherein each through hole (3) is vertical with electrically-conductive backing plate.
2. the light anode construction of DSSC according to claim 1 is characterized in that, described column (6) is all vertical with bottom, and its diameter is 0.5 μ m-5 μ m.
3. the light anode construction of DSSC according to claim 1, it is characterized in that, hole in described column (6) column structure is fork shape and distributes, and each through hole (3) upwards penetrates semiconductor film (5), and the inclined hole of the superiors (4) upwards penetrates semiconductor film (5).
4. the light anode construction of DSSC according to claim 1 is characterized in that, the diameter of described through hole (3) is 0.2 μ m-2 μ m, and the diameter of inclined hole (4) is 0.1 μ m-1 μ m.
5. the light anode construction of DSSC according to claim 1 is characterized in that, the thickness of described fine and close semiconductor underlayer (2) is 20nm-50nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020651194 CN201927490U (en) | 2010-12-10 | 2010-12-10 | Light positive pole structure of dye sensitization solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020651194 CN201927490U (en) | 2010-12-10 | 2010-12-10 | Light positive pole structure of dye sensitization solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201927490U true CN201927490U (en) | 2011-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020651194 Expired - Fee Related CN201927490U (en) | 2010-12-10 | 2010-12-10 | Light positive pole structure of dye sensitization solar battery |
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| Country | Link |
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| CN (1) | CN201927490U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198924A (en) * | 2013-04-12 | 2013-07-10 | 中国科学院化学研究所 | Photo-anode of dye-sensitized solar cell and preparation method thereof |
-
2010
- 2010-12-10 CN CN 201020651194 patent/CN201927490U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198924A (en) * | 2013-04-12 | 2013-07-10 | 中国科学院化学研究所 | Photo-anode of dye-sensitized solar cell and preparation method thereof |
| CN103198924B (en) * | 2013-04-12 | 2015-12-23 | 中国科学院化学研究所 | Light anode of DSSC and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110810 Termination date: 20121210 |