CN201927490U - Light positive pole structure of dye sensitization solar battery - Google Patents

Light positive pole structure of dye sensitization solar battery Download PDF

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CN201927490U
CN201927490U CN201020651194.9U CN201020651194U CN201927490U CN 201927490 U CN201927490 U CN 201927490U CN 201020651194 U CN201020651194 U CN 201020651194U CN 201927490 U CN201927490 U CN 201927490U
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hole
film
semiconductor
anode construction
dye
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赵紫辰
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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Abstract

本实用新型公开了一种染料敏化太阳能电池的光阳极结构,包括导电基板,在导电基板上覆盖有导电膜,导电膜上覆盖有致密半导体底层致密半导体底层上设置有半导体膜,半导体膜中设置有多个有序排列的由纳米颗粒堆积而成的多孔柱状体,每个柱状体中包含分岔形的孔隙,每个分岔形孔隙包括通孔和斜孔组成,其中每个通孔与导电基板垂直。本实用新型的结构中,光阳极紧凑有序,表面积大,能够吸附更多介质,能为介质提供更多的传输通道,有利于电解液传质,提高染料敏化电池的光电转化效率;有序排列的纳米柱相对独立,柱状结构中的纳米粒子连接紧密,电荷传输路径短,电阻低;光在薄膜中的传播路径长,散射大,被吸收效率提高。

Figure 201020651194

The utility model discloses a photoanode structure of a dye-sensitized solar cell, which comprises a conductive substrate, a conductive film is covered on the conductive substrate, a dense semiconductor bottom layer is covered on the conductive film, and a semiconductor film is arranged on the dense semiconductor bottom layer. There are a plurality of porous columnar bodies stacked by nanoparticles arranged in an orderly manner. Each columnar body contains bifurcated pores. Each bifurcated pore consists of through holes and oblique holes. Each through hole perpendicular to the conductive substrate. In the structure of the utility model, the photoanode is compact and orderly, has a large surface area, can absorb more media, can provide more transmission channels for the media, is beneficial to the mass transfer of the electrolyte, and improves the photoelectric conversion efficiency of the dye-sensitized battery; The nano-pillars arranged in order are relatively independent, and the nanoparticles in the columnar structure are closely connected, the charge transmission path is short, and the resistance is low; the light propagation path in the film is long, the scattering is large, and the absorption efficiency is improved.

Figure 201020651194

Description

A kind of light anode construction of DSSC
Technical field
The utility model belongs to technical field of solar batteries, relates to a kind of light anode construction of DSSC.
Background technology
The semiconductor optical anode of dye-sensitized solar cells relies on the high surface area of electrode material and participates in interfacial reaction, produces electronics, by interconnecting reduction resistance between the particle, reduces the electron transport loss.Simultaneously, the semiconductor optical anode of battery by dye sensitization after, contact with electrolyte and could form the loop, continue to produce electric current.This requires the light anode that high surface area should be arranged, suitably contact again between the particle, and pore structure links up simultaneously, helps electrolytical migration.This class electrode mostly is nano-crystal film at present, the advantage of nano-crystal film is that porosity height, surface area are big, the absorbing dye amount is big, electrolyte exchange channel is unimpeded, preparation technology is simple, and its drawback is that the nano particle arrangement is unordered, and it is poor to connect degree each other, gathering taking place easily and become the electron recombination center, is unfavorable for the transmission of electronics.
The pore structure that Chinese patent (application number 201020156486.5) discloses a kind of nano-crystal film is the light anode construction of the shape of diverging, and this structure is when the connection degree is improved between nano particle, hole connective good, and electrolytical migration is smooth and easy.But the transmission path of electric charge is longer relatively in whole layer nano-crystal film, and the scattering of light in film and absorption also are difficult to control.
Summary of the invention
The purpose of this utility model provides a kind of light anode construction of DSSC, the charge transfer path that has solved existing nano-crystal film existence is longer relatively, the scattering of light in film and the unmanageable problem of absorption, improve the absorption efficiency of light, helped to improve the electricity conversion of battery.
The technical scheme that the utility model adopted is, a kind of light anode construction of DSSC, comprise electrically-conductive backing plate, on electrically-conductive backing plate, be coated with conducting film, be coated with the fine and close semiconductor underlayer of fine and close semiconductor underlayer on the conducting film and be provided with semiconductor film, what be provided with a plurality of orderly arrangements in the semiconductor film piles up the porous column that forms by nano particle, comprise the hole that diverges shape in each column, each fork shape hole comprises through hole and inclined hole composition, and wherein each through hole is vertical with electrically-conductive backing plate.
The beneficial effects of the utility model are, the light anode is in order compact, and surface area is big, can adsorb more multimedium, can provide more transmission channel for medium, helps the electrolyte mass transfer, improve the electricity conversion of dye-sensitized cell; The nano-pillar of arranging is relatively independent in order, and the nano particle in the column structure connects closely, and charge transfer path is short, and resistance is low; The nano-pillar of arranging in order in the light anode construction has the characteristic size that is similar to visible wavelength, and the propagation path of light in film is long, and scattering is big, is absorbed efficient and improves.
Description of drawings
Fig. 1 is a smooth anode construction sectional schematic diagram of the present utility model;
Fig. 2 is the plan structure schematic diagram of Fig. 1.
Among the figure, 1. conducting film, 2. fine and close semiconductor underlayer, 3. through hole, 4. inclined hole, 5. semiconductor film, 6. column.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is elaborated.
As Fig. 1, Fig. 2, the light anode construction of DSSC of the present utility model is, comprise the electrically-conductive backing plate that is coated with conducting film 1, be coated with fine and close semiconductor underlayer 2 on the conducting film 1, the thickness of fine and close semiconductor underlayer 2 is 20nm-50nm, fine and close semiconductor underlayer 2 is provided with semiconductor film 5, what be provided with a plurality of orderly arrangements among the semiconductor film 5 piles up the column 6 of the porous that forms by nano particle, each column 6 is all vertical with fine and close semiconductor underlayer 2, and the diameter of each column 6 is 0.5 μ m-5 μ m.The hole that is comprised in the column 6 is fork shape and distributes, and comprises the through hole 3 and the inclined hole on every side 4 in axle center, and through hole 3 is vertical with electrically-conductive backing plate.
Each through hole 3 upwards penetrates semiconductor film 5, and the inclined hole 4 of the superiors upwards penetrates semiconductor film 5, and the diameter of through hole 3 is 0.2 μ m-2 μ m, and the diameter of inclined hole 4 is 0.1 μ m-1 μ m.
Electrically-conductive backing plate is selected a kind of or composition of polymer, clear glass, metal (as copper, aluminium etc.) for use.
Semiconductor film 5 is selected TiO for use 2, ZnO, SnO 2A kind of or the composition of conductor oxidate.
The principle of smooth anode construction of the present utility model is: for dye-sensitized solar cells, after being adsorbed on the dye molecule absorption luminous energy on the semiconductor particle, electron excitation is injected into the semiconductor conduction band, the hole is stayed in the dyestuff, the dyestuff of oxidation state is reduced by electrolyte, the electrolyte of oxidation state need be reduced in that electrode is accepted electronics, forms the loop.So in the light anode construction, semiconductor particle need adsorb enough dye molecules and electrolyte; Simultaneously, need to shorten the transmission distance of electric charge in film, reduce the electron transport loss; Improve the scattering of light in film in addition and absorb the electricity conversion that also helps to improve battery.The utility model is at this link of the scattering of sunlight in semiconductive thin film, run into the thought that the barrier scattering close with its wavelength increases based on light, proposed in the light anode construction of DSSC, porous semiconductor film is made of the nano-pillar of orderly arrangement, the characteristic size and the wavelength of visible light of nano-pillar are close, increase the scattering of light in film, improve the electricity conversion of battery; Each nano-pillar nano particle is piled up and is formed simultaneously, and its internal void is fork shape, and through hole is vertical with electrically-conductive backing plate, shortens the transmission path of electrolytical migration and electric charge.
The utility model has the advantage of: the scattering of light in semiconductive thin film is big, and propagation path is long, can improve the efficient that is absorbed of light; Adopt columnar arrays light anode construction, each nano-pillar is relatively independent, and the transmission path of electronics in electrode material is short, and resistance is little; The pore communication of semiconductor film is good, and the transmission path of electrolytical migration and electric charge is short, is conducive to the electrolyte mass transfer, improves the electricity conversion of dye-sensitized cell.

Claims (5)

1. the light anode construction of a DSSC, comprise electrically-conductive backing plate, it is characterized in that: on electrically-conductive backing plate, be coated with conducting film (1), be coated with fine and close semiconductor underlayer (2) on the conducting film (1), fine and close semiconductor underlayer (2) is provided with semiconductor film (5), what be provided with a plurality of orderly arrangements in the semiconductor film (5) piles up the porous column (6) that forms by nano particle, each column comprises the hole that diverges shape in (6), each fork shape hole comprises through hole (3) and inclined hole (4) composition, and wherein each through hole (3) is vertical with electrically-conductive backing plate.
2. the light anode construction of DSSC according to claim 1 is characterized in that, described column (6) is all vertical with bottom, and its diameter is 0.5 μ m-5 μ m.
3. the light anode construction of DSSC according to claim 1, it is characterized in that, hole in described column (6) column structure is fork shape and distributes, and each through hole (3) upwards penetrates semiconductor film (5), and the inclined hole of the superiors (4) upwards penetrates semiconductor film (5).
4. the light anode construction of DSSC according to claim 1 is characterized in that, the diameter of described through hole (3) is 0.2 μ m-2 μ m, and the diameter of inclined hole (4) is 0.1 μ m-1 μ m.
5. the light anode construction of DSSC according to claim 1 is characterized in that, the thickness of described fine and close semiconductor underlayer (2) is 20nm-50nm.
CN201020651194.9U 2010-12-10 2010-12-10 Light positive pole structure of dye sensitization solar battery Expired - Fee Related CN201927490U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103198924A (en) * 2013-04-12 2013-07-10 中国科学院化学研究所 Photo-anode of dye-sensitized solar cell and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103198924A (en) * 2013-04-12 2013-07-10 中国科学院化学研究所 Photo-anode of dye-sensitized solar cell and preparation method thereof
CN103198924B (en) * 2013-04-12 2015-12-23 中国科学院化学研究所 Light anode of DSSC and preparation method thereof

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Granted publication date: 20110810

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