CN201901725U - 用于硅单晶生长的导流筒 - Google Patents
用于硅单晶生长的导流筒 Download PDFInfo
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- CN201901725U CN201901725U CN 201020655906 CN201020655906U CN201901725U CN 201901725 U CN201901725 U CN 201901725U CN 201020655906 CN201020655906 CN 201020655906 CN 201020655906 U CN201020655906 U CN 201020655906U CN 201901725 U CN201901725 U CN 201901725U
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CN 201020655906 CN201901725U (zh) | 2010-12-13 | 2010-12-13 | 用于硅单晶生长的导流筒 |
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CN 201020655906 CN201901725U (zh) | 2010-12-13 | 2010-12-13 | 用于硅单晶生长的导流筒 |
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CN201901725U true CN201901725U (zh) | 2011-07-20 |
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CN 201020655906 Expired - Lifetime CN201901725U (zh) | 2010-12-13 | 2010-12-13 | 用于硅单晶生长的导流筒 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI749560B (zh) * | 2019-06-18 | 2021-12-11 | 大陸商上海新昇半導體科技有限公司 | 一種半導體晶體生長裝置 |
CN114277433A (zh) * | 2021-12-24 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | 应用于汉虹单晶炉的单晶退火产品的生长方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI749560B (zh) * | 2019-06-18 | 2021-12-11 | 大陸商上海新昇半導體科技有限公司 | 一種半導體晶體生長裝置 |
CN114277433A (zh) * | 2021-12-24 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | 应用于汉虹单晶炉的单晶退火产品的生长方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181101 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: Tianjin Zhonghuan Semiconductor Co., Ltd. Address before: 300384 Tianjin Nankai District Huayuan Industrial Park (outside the ring) 12 East Hai Tai Road Patentee before: Huanou Semiconductor Material Technology Co., Ltd., Tianjin |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190522 Address after: 010000 No. 15 Baolier Street, Saihan District, Hohhot City, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co., Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee before: Tianjin Zhonghuan Semiconductor Co., Ltd. |
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TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20110720 |
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CX01 | Expiry of patent term |