CN201868396U - Insulated pull rod of power semiconductor and pressing device thereof - Google Patents
Insulated pull rod of power semiconductor and pressing device thereof Download PDFInfo
- Publication number
- CN201868396U CN201868396U CN201020638780XU CN201020638780U CN201868396U CN 201868396 U CN201868396 U CN 201868396U CN 201020638780X U CN201020638780X U CN 201020638780XU CN 201020638780 U CN201020638780 U CN 201020638780U CN 201868396 U CN201868396 U CN 201868396U
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- power semiconductor
- insulated tension
- tension pole
- butterfly spring
- pull rod
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Abstract
The utility model discloses an insulated pull rod of power semiconductor and a pressing device thereof. The insulated pull rod comprises an insulated pull rod body, force bearing fixing ends, countersunk through holes and nuts, wherein the insulated pull rod body is a main force bearing part of the insulated pull rod of the power semiconductor; the force bearing fixing ends are located at two ends of the insulated pull rod body and used for fixing the insulated pull rod of the power semiconductor; at least two countersunk through holes are formed at the force bearing fixing ends of the insulated pull rod of the power semiconductor respectively and used for fixing the insulated pull rod of the power semiconductor with the pressing device of the power semiconductor; at least two nuts are located at the force bearing fixing ends of the insulated pull rod of the power semiconductor respectively and used for fixing the insulated pull rod of the power semiconductor with an external installation platform. Since the technical scheme is adopted, pressure requirements of the power semiconductor can be met, the insulation of structures with different voltage classes can be achieved and the problem that great deformation of the insulated pull rod caused by thermal expansion and cold contraction due to ambient temperature is solved.
Description
Technical field
The utility model relates to a kind of power semiconductor insulated tension pole and hold down gag thereof, especially relates to power semiconductor insulated tension pole and hold down gag thereof that a kind of flat power semiconductor device series connection that is applied to the power semiconductor field of power electronics press-fits usefulness.
Background technology
Follow the utility model and the application of a large amount of new techniques, the client is to the increasingly stringent that requires of equipment volume, power semiconductor assembly is towards high voltage more and more small size development, and the thing followed promptly is more the small size Insulation Problems down and the pressure assurance problem of power semiconductor.
In the prior art, for flat power semiconductor device, traditional press-fit approach all is that directly generation is to the thrust at power semiconductor two ends by straining at tight metal screw, and its two poles of the earth insulation realizes by the insulating sleeve that is enclosed within on the stretching screw.But when in the high-voltage applications field, the miniaturization device of high reliability more and more is subjected to client's favorable comment, the scheme that compresses of a kind of use insulation blanket stud (insulating material making) alternative metals screw rod also occurred for this reason.
1. in the prior art, use metal screw when tradition press-fits can satisfy the pressure requirement of power semiconductor from the tensile strength aspect, but metal is as a kind of conductor, Insulation Problems under hyperbaric environment is a very crucial problem, usually adopt the bag insulating sleeve to realize high-tension isolation, but insulating sleeve is accompanied by its withstand voltage properties of oxidation can significantly descend, and finally has influence on reliability of products.
2. in the prior art, using insulation blanket stud alternative metals screw rod is many a kind of schemes of using at present, insulation blanket stud also can satisfy the pressure requirement of power semiconductor by type selecting, but its stressed sectional area is little, under identical stressed sectional area, the mechanical property of insulation blanket stud is directly proportional with the tensile strength of its material, the cost of high tensile is very high, and processing technology requires very harsh, cause the insulation blanket stud cost very high, and when ambient temperature has bigger variation, usually influenced by ambient temperature expanding with heat and contract with cold causes the actual pressure of power semiconductor to come and go, and is in for a long time in the frequent environment of this variation of ambient temperature, can cause the insulation blanket stud stress fatigue, finally have influence on reliability of products.
The utility model content
The plate type semiconductor device that the purpose of this utility model provides a kind of highly versatile, go for various flat power devices and radiator thereof, can satisfy the power semiconductor pressure demand simultaneously and solve each electric pressure structure Insulation Problems preferably press-fits the power semiconductor insulated tension pole and the hold down gag thereof of usefulness, be particularly useful for the high pressure field that the series connection of high-voltage power semiconductor device press-fits application, in order to substitute metal screw of the prior art and insulation blanket stud and hold down gag thereof.
The utility model provides a kind of embodiment of power semiconductor insulated tension pole, the described a kind of power semiconductor insulated tension pole of this execution mode comprises: the insulated tension pole main body, stressed stiff end, countersunk head through hole and nut, the insulated tension pole main body is the main force part of power semiconductor insulated tension pole, stressed stiff end is positioned at the two ends of insulated tension pole main body, be used for the power semiconductor insulated tension pole is connected and fixed, at least two countersunk head through holes lay respectively at two stressed stiff ends of power semiconductor insulated tension pole, be used for fixing between power semiconductor insulated tension pole and the power semiconductor hold down gag, at least two nuts lay respectively at two stressed stiff ends of power semiconductor insulated tension pole, are used for fixing between power semiconductor insulated tension pole and the extraneous mounting platform.
As the further execution mode of a kind of power semiconductor insulated tension pole of the utility model, the power semiconductor insulated tension pole comprises that further at least one is strengthened gusset, strengthens gusset and is positioned on the insulated tension pole main body.
As the further execution mode of a kind of power semiconductor insulated tension pole of the utility model, the power semiconductor insulated tension pole further comprises at least one groove, and groove is positioned at the relative reverse side of strengthening the gusset installed surface on the insulated tension pole main body.
As the further execution mode of a kind of power semiconductor insulated tension pole of the utility model, the countersunk head through hole further is two groups totally four, and every group of two countersunk head through holes lay respectively at two stressed stiff ends of power semiconductor insulated tension pole.
As the further execution mode of a kind of power semiconductor insulated tension pole of the utility model, nut is inserted nut further, has two groups totally six, and every group of three nuts lay respectively at two stressed stiff ends of power semiconductor insulated tension pole.
The utility model also provides a kind of embodiment of power semiconductor insulated tension pole hold down gag, the described hold down gag of this execution mode comprises the power semiconductor insulated tension pole, upper mounted plate, bottom plate and power semiconductor compression module, two power semiconductor insulated tension poles and fixed head and bottom plate are formed the framework of hold down gag, overall fixed is on firm banking, and the power semiconductor compression module is placed in the framework of hold down gag, and is installed in the upper end of semiconductor power component.
As the further execution mode of a kind of power semiconductor insulated tension pole of the utility model hold down gag, the power semiconductor compression module further comprises guide post, the butterfly spring lower baffle plate, butterfly spring, the butterfly spring overhead gage, fixing cushion block, clamp nut and stop nut, guide post, the butterfly spring lower baffle plate, butterfly spring, the butterfly spring overhead gage, fixing cushion block, clamp nut and stop nut be assembling successively from bottom to up, by clamp nut and stop nut with guide post, the butterfly spring lower baffle plate, butterfly spring, the butterfly spring overhead gage, fixedly cushion block and semiconductor power component are pressed abd fixed between upper mounted plate and the bottom plate.
By using the described power semiconductor insulated tension pole of the utility model execution mode and hold down gag and assemble method thereof, can satisfy the power semiconductor pressure demand simultaneously and solve the problem of each electric pressure structure insulation preferably.Because insulated tension pole of the present utility model is to strengthen its maximum tension stress that can bear according to increasing stressed sectional area, can also solve the big problem of the deflection that expands with heat and contract with cold that ambient temperature causes insulated tension pole simultaneously.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation one-front view of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 2 is the structural representation two-rearview of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 3 is the structural representation three-vertical view of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 4 is the structural representation four-upward view of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 5 is the structural representation five-left view of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 6 is the structural representation six-right view of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 7 is the structural representation seven-stereogram 1 of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 8 is the structural representation eight-stereogram 2 of the power semiconductor insulated tension pole of a kind of execution mode of the utility model;
Fig. 9 is the structural representation of the execution mode of a kind of hold down gag that utilizes the power semiconductor insulated tension pole of the utility model;
Wherein: 1,1 '-the insulated tension pole main body, 2,2 '-stressed stiff end, 3-strengthens gusset, 4-countersunk head through hole, 5-nut, 6-upper mounted plate, the 7-bottom plate, 8-semiconductor power component, 9-guide post, 10-butterfly spring lower baffle plate, 11-butterfly spring, 12-butterfly spring overhead gage, 13-is cushion block fixedly, 14-clamp nut, 15-stop nut, the 16-firm banking, the 17-groove.
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is a part of embodiment of the present utility model, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
As the embodiment of a kind of power semiconductor insulated tension pole of the utility model, to shown in Figure 8, be a kind of embodiment that specifically is applied in the power semiconductor insulated tension pole in power electronics high pressure soft starting field as Fig. 1.The series connection that this embodiment specifically is used for the high pressure flat power semiconductor device press-fits.The power semiconductor insulated tension pole comprises: insulated tension pole main body 1, stressed stiff end 2,2 ', countersunk head through hole 4 and nut 5, insulated tension pole main body 1 is the main force part of power semiconductor insulated tension pole, stressed stiff end 2,2 ' be positioned at the two ends of insulated tension pole main body 1, be used for the power semiconductor insulated tension pole is connected and fixed, countersunk head through hole 4 is two groups totally four, every group of two countersunk head through hole 4 lay respectively at two stressed stiff ends 2,2 of power semiconductor insulated tension pole ', be used for fixing between power semiconductor insulated tension pole and the power semiconductor hold down gag, nut 5 is inserted nut, has two groups totally six, and every group of three nuts 5 lay respectively at two stressed stiff ends 2 of power semiconductor insulated tension pole, 2 ', be used for fixing between power semiconductor insulated tension pole and the extraneous mounting platform.The power semiconductor insulated tension pole comprises that at least one is strengthened gusset 3, strengthens gusset 3 and is positioned on the insulated tension pole main body 1.The power semiconductor insulated tension pole also comprises at least one groove 17, and groove 17 is positioned at the relative reverse side of strengthening gusset 3 installed surfaces on the insulated tension pole main body 1.Can under the prerequisite that satisfies power semiconductor insulated tension pole tensile strength, further save material by design groove 17.
1 is the insulated tension pole main body, and the main force part as the power semiconductor insulated tension pole itself has bigger sectional area, under the situation of same material, has better mechanics tensile property than insulation blanket stud, and is not vulnerable to the influence of ambient temperature; 2 and 2 ' be stressed stiff end, in order to the fixed insulation pull bar, guarantee the stability of pull bar; 3 for strengthening gusset, at first increased the stressed sectional area of pull bar, guaranteed the mechanical property of insulated tension pole, secondly, also can carry out location positioning to the radiator of the flat power semiconductor assembly that press-fited, guarantees to press-fit the requirement of positional precision; 4 is the countersunk head through hole, and the hold down gag that is used for press-fiting with the flat power semiconductor assembly is connected and fixed; 5 is inserted nut, is used for fixing the power semiconductor insulated tension pole on mounting platform, is that the flat power semiconductor assembly press-fits and the extraneous parts that are connected and fixed.
Wherein, the material of power semiconductor insulated tension pole use has: polyethylene, SMC, DMC etc.The SMC material is the abbreviation of Sheet molding compound, i.e. sheet molding compound.DMC (BMC) is the abbreviation of Dough (Bulk) molding compound, i.e. BMC.The domestic unsaturated polyester (UP) BMC that often is called.
The described power semiconductor insulated tension pole of the utility model embodiment has the following advantages:
1. have good withstand voltage properties
Insulated tension pole itself is to use insulating material to make, and itself just has very strong withstand voltage properties, more can increase the anti-creepage performance on insulated tension pole surface by surface treatment, and is difficult for influencing because of wearing out the withstand voltage properties of insulated tension pole.
2. have good mechanical property
By computing formula: σ
b=F
b/ S
o
In the formula: F
b--the maximum, force of being born when sample is broken, N(newton); S
o--the original cross-sectional area of sample, mm
2σ
b--the tensile strength of sample material, unit is N/mm
2(MPa).
In order to satisfy the insulated tension pole mechanical property requirements, selected a kind of insulating material, its tensile strength sigma
bBe fixed, change its stressed sectional area S
oSize, just can change the maximum, force F that is born when sample is broken
bSelect by the three, just can find a perfect balance point, in order to satisfy the mechanical property requirements of mechanics insulated tension pole.
3. cost is lower
Because the stressed sectional area ratio of insulated tension pole is bigger, by σ
b=F
b/ S
oCan draw F
b=σ
B*S
o, in order to satisfy F
b, under the big situation of stressed sectional area So, just can select σ
bLittle insulating material can reduce the requirement to the insulated tension pole material significantly, thereby reduce product cost.
4. production simple and fast
The insulated tension pole outward appearance is simple, easily uses injection mold production; Select a kind of molding powder of insulating material for use, use injection mold to produce fast in a large number, and can guarantee the dimensional accuracy of insulated tension pole, and can not have the waste problem of material, on certain, also reduced the insulated tension pole cost.Large batch of typing production, advantage is more obvious.
As shown in Figure 9 be a kind of power semiconductor insulated tension pole hold down gag, comprise the power semiconductor insulated tension pole, upper mounted plate 6, bottom plate 7 and power semiconductor compression module, two power semiconductor insulated tension poles and fixed head 6 and bottom plate 7 are formed the framework of hold down gags, overall fixed is on firm banking 16, and the power semiconductor compression module is placed in the framework of hold down gag, and is installed in the upper end of semiconductor power component 8.The power semiconductor compression module further comprises guide post 9, butterfly spring lower baffle plate 10, butterfly spring 11, butterfly spring overhead gage 12, fixedly cushion block 13, clamp nut 14 and stop nut 15, guide post 9, butterfly spring lower baffle plate 10, butterfly spring 11, butterfly spring overhead gage 12, fixedly cushion block 13, clamp nut 14 and stop nut 15 be assembling successively from bottom to up, by clamp nut 14 and stop nut 15 with guide post 9, butterfly spring lower baffle plate 10, butterfly spring 11, butterfly spring overhead gage 12, fixedly cushion block 13 and semiconductor power component 8 are pressed abd fixed between upper mounted plate 6 and the bottom plate 7.
A kind of assemble method of power semiconductor insulated tension pole hold down gag is that overall fixed is on firm banking 16 then by the framework with two power semiconductor insulated tension poles and fixed head 6 and bottom plate 7 composition hold down gags; The power semiconductor compression module is placed in the framework of hold down gag, and is installed in the upper end of semiconductor power component 8, semiconductor power component 8 is press-fited; A pressure sensor is installed in the upper end of semiconductor power component 8, and the upper end minimum that is stressed in order to guarantee element pressure, therefore is installed in pressure sensor the top like this.Use torque spanner to rotatably compress nut 14 then, promote butterfly spring overhead gage 12 and compress butterfly spring 11, by butterfly spring 11 pressure is conveyed to guide post 9, act on then on semiconductor power component 8 and the pressure sensor, when pressure sensor readings satisfies semiconductor power component 8 needed pressure, record torque spanner reading A at that time;
Reverse rotation clamp nut 14, rush down internal pressure, pressure sensor is taken off, re-use torque spanner and rotatably compress nut 14, promote butterfly spring overhead gage 12 and compress butterfly spring 11, by butterfly spring 11 pressure is conveyed to guide post 9, when the moment of torque spanner reaches A, promptly satisfied the pressure demand of semiconductor power component 8, use stop nut 15 that hold down gag is locked then, prevent that clamp nut 14 is loosening, finish the assembling of whole hold down gag.Two power semiconductor insulated tension poles are main tension parts of whole power semiconductor insulated tension pole hold down gag, and semiconductor power component 8 is had certain positioning action.
The described scheme of above-mentioned embodiment is mainly used in the 10KV system at present, require insulated tension pole to be subjected to tensile force f〉25KN, withstand voltage properties satisfies the requirement (industrial frequency withstand voltage 42KV, surface creepage satisfies 25KV/100mm) of 10KV, material is the SMC molding powder, and tool production is touched in hot injection moulding.Certainly this programme can also be used for other fields similar and the different capacity grade.
The above only is a preferred implementation of the present utility model; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (7)
1. power semiconductor insulated tension pole, it is characterized in that: comprise insulated tension pole main body (1), stressed stiff end (2,2 '), countersunk head through hole (4) and nut (5), insulated tension pole main body (1) is the main force part of power semiconductor insulated tension pole, stressed stiff end (2,2 ') be positioned at the two ends of insulated tension pole main body (1), be used for the power semiconductor insulated tension pole is connected and fixed, at least two countersunk head through holes (4) lay respectively at two stressed stiff ends (2 of power semiconductor insulated tension pole, 2 '), being used for fixing between power semiconductor insulated tension pole and the power semiconductor hold down gag, at least two nuts (5) lay respectively at two stressed stiff ends (2 of power semiconductor insulated tension pole, 2 '), be used for fixing between power semiconductor insulated tension pole and the extraneous mounting platform.
2. a kind of power semiconductor insulated tension pole according to claim 1 is characterized in that: described power semiconductor insulated tension pole comprises that at least one is strengthened gusset (3), strengthens gusset (3) and is positioned on the insulated tension pole main body (1).
3. a kind of power semiconductor insulated tension pole according to claim 1 and 2, it is characterized in that: described power semiconductor insulated tension pole comprises at least one groove (17), and described groove (17) is positioned at insulated tension pole main body (1) and goes up the relative reverse side of strengthening gusset (3) installed surface.
4. a kind of power semiconductor insulated tension pole according to claim 3, it is characterized in that: described countersunk head through hole (4) is two groups totally four, every group two countersunk head through holes (4) lay respectively at two stressed stiff ends (2,2 ') of power semiconductor insulated tension pole.
5. a kind of power semiconductor insulated tension pole according to claim 4, it is characterized in that: described nut (5) is inserted nut, have two groups totally six, three every group nuts (5) lay respectively at two stressed stiff ends (2,2 ') of power semiconductor insulated tension pole.
6. one kind is utilized claim 1,2,4, the hold down gag of the described a kind of power semiconductor insulated tension pole of arbitrary claim in 5, it is characterized in that: described hold down gag comprises the power semiconductor insulated tension pole, upper mounted plate (6), bottom plate (7) and power semiconductor compression module, two power semiconductor insulated tension poles and fixed head (6) and bottom plate (7) are formed the framework of hold down gag, overall fixed is on firm banking (16), the power semiconductor compression module is placed in the framework of hold down gag, and is installed in the upper end of semiconductor power component (8).
7. a kind of power semiconductor insulated tension pole hold down gag according to claim 6, it is characterized in that: described power semiconductor compression module comprises guide post (9), butterfly spring lower baffle plate (10), butterfly spring (11), butterfly spring overhead gage (12), fixing cushion block (13), clamp nut (14) and stop nut (15), described guide post (9), butterfly spring lower baffle plate (10), butterfly spring (11), butterfly spring overhead gage (12), fixing cushion block (13), clamp nut (14) and stop nut (15) be assembling successively from bottom to up, by clamp nut (14) and stop nut (15) with guide post (9), butterfly spring lower baffle plate (10), butterfly spring (11), butterfly spring overhead gage (12), fixedly cushion block (13) and semiconductor power component (8) are pressed abd fixed between upper mounted plate (6) and the bottom plate (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020638780XU CN201868396U (en) | 2010-12-02 | 2010-12-02 | Insulated pull rod of power semiconductor and pressing device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020638780XU CN201868396U (en) | 2010-12-02 | 2010-12-02 | Insulated pull rod of power semiconductor and pressing device thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201868396U true CN201868396U (en) | 2011-06-15 |
Family
ID=44139543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020638780XU Expired - Lifetime CN201868396U (en) | 2010-12-02 | 2010-12-02 | Insulated pull rod of power semiconductor and pressing device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201868396U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110621A (en) * | 2010-12-02 | 2011-06-29 | 株洲变流技术国家工程研究中心有限公司 | Insulated pull rod and pressing device for power semiconductor, and assembly method of pressing device |
-
2010
- 2010-12-02 CN CN201020638780XU patent/CN201868396U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110621A (en) * | 2010-12-02 | 2011-06-29 | 株洲变流技术国家工程研究中心有限公司 | Insulated pull rod and pressing device for power semiconductor, and assembly method of pressing device |
| CN102110621B (en) * | 2010-12-02 | 2012-08-01 | 株洲变流技术国家工程研究中心有限公司 | Insulated pull rod and pressing device for power semiconductor, and assembly method of pressing device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110615 |
|
| CX01 | Expiry of patent term |