CN201820800U - High-power LED device - Google Patents
High-power LED device Download PDFInfo
- Publication number
- CN201820800U CN201820800U CN2010205686594U CN201020568659U CN201820800U CN 201820800 U CN201820800 U CN 201820800U CN 2010205686594 U CN2010205686594 U CN 2010205686594U CN 201020568659 U CN201020568659 U CN 201020568659U CN 201820800 U CN201820800 U CN 201820800U
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- CN
- China
- Prior art keywords
- heat sink
- power led
- pcb substrate
- led device
- great power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The utility model discloses a high-power LED (light-emitting diode) device. The high-power LED device comprises a PCB (printed circuit board ) substrate with a through hole left thereon, a heat sink structure embedded in the through hole of the PCB substrate, an LED chip mounted on the heat sink structure, an optical lens mounted on the surface of the PCB substrate, an electrode structure arranged on the PCB substrate, conducting wires used for connecting the electrode structure with the pins of the LED chip, and at least a metal material layer coated on the upper surface of a heat sink. The design of the heat sink and the through hole electrode reduces the volume of the device to the largest extent while ensuring the heat radiating effect of the device; the arrangement of the metal material on the surface of the heat sink enables the installation part of the chip to be smoother and neater, and improves the bonding reliability of the chip and the light emitting efficiency of the device. Besides, the PCB substrate is adopted, and the manufacturing technique is mature, so that the manufacture and the process are simple, and the economization of production cost and the enlargement of product application are facilitated.
Description
Technical field
The utility model relates to a kind of great power LED device.
Background technology
At lighting field, the great power LED device that is adopted is energy-conservation with it, operating voltage is low, long working life and more and more be subjected to consumer's favor.At present, Chang Yong great power LED device adopts the imitative lumen structure of lumen company more or is the encapsulating structure of substrate with the ceramic material.
As Fig. 1, existing imitative lumen structure great power LED device is equipped with the heat sink structure 2 that is used to dispel the heat in encapsulation base plate 1, led chip 3 is installed on the heat sink structure 2, by package lens 4 fixing and optically focused, be provided with electrode pin 5 at heat sink periphery, this pin is towards heat sink radially protrusion.The radiating effect of the power LED lamp of this structure is good, and the manufacture craft maturation of heat sink and understructure still, because packaging pin protrudes, makes device volume bigger, and it need take bigger zone when installing, and is unfavorable for the LED device is carried out secondary light-distribution.In addition, be subjected to the restriction of metal working process, heat sink the planarization and the fineness of laying led chip are difficult to guarantee, are unfavorable for the reliability that chip attach is laid, also the further raising of suppression device light extraction efficiency.
In order to reduce device volume, the miniaturization power LED device of ceramic substrate has appearred on the market having, as Fig. 2, on ceramic substrate 6, be provided with chip mount portion 7 and electrical lead connecting portion 8, the led chip 9 that is installed in chip mount portion 7 is electrically connected itself and electrical lead connecting portion by lead 10, package lens 11 is installed on the ceramic substrate, has installed a series of through holes, form bottom electrode and heat dissipation channel at the chip mount portion and the electrical lead connecting portion of substrate.The power LED device volume of this structure is less, and still, a series of through holes that are provided with for heat radiation have increased the complexity that substrate is made undoubtedly, have increased processing cost.In addition, for some more high-power LED devices (as 5W, 10W), be confined to the conductive coefficient of ceramic material, the device miniature encapsulation becomes and is difficult to more realize.
Therefore, very be necessary to provide a kind of heat dispersion excellent, good reliability, light extraction efficiency height, the great power LED device architecture that cost is low.
Summary of the invention
When the purpose of this utility model is to provide a kind of good heat dissipation, and volume is little, cost is low, the great power LED device of good reliability, to improve the product practicality.
A kind of great power LED device, comprise the PCB substrate that leaves through hole, be embedded in the heat sink structure in the PCB substrate through-hole, be installed in the led chip on the heat sink structure, at the PCB substrate surface optical lens is installed, be arranged on the electrode structure of PCB substrate in addition, the lead of connection electrode structure and led chip pin, heat sink upper surface also is covered with at least one metal material layer.
Adopt the utility model structure, the design of heat sink and through hole electrode can reduce the volume of device to greatest extent when guaranteeing the device radiating effect; The setting of heat sink surface metal material makes and has improved the reliability of chip attach and the light extraction efficiency of device by the smooth more brighter and cleaner of chip mount portion.In addition, adopt the PCB substrate, its mature production technology, processing and fabricating is simple, helps saving production cost, and enlarges the application of product.
Description of drawings
Fig. 1 is the sectional structure chart of existing imitative lumen structure great power LED device.
Fig. 2 is the sectional structure chart of the great power LED device of existing ceramic substrate.
Fig. 3 is the sectional structure chart of the utility model embodiment 1.
Fig. 4 is an electrode structure schematic diagram of the present utility model.
Fig. 5 is the utility model embodiment 1 bottom view.
Fig. 6 is the sectional structure chart of the utility model embodiment 2.
Fig. 7 is the sectional structure chart of the utility model embodiment 3.
Embodiment
Following structure accompanying drawing, the utility model will be further described.
Embodiment one:
As Fig. 3, a kind of great power LED device, comprise the PCB substrate 101 that leaves through hole, be embedded in the heat sink structure 102 in PCB substrate 101 through holes, be installed in the led chip 103 on the heat sink structure 102, optical lens 104 is arranged in PCB substrate 101 mounted on surface, be arranged on the electrode structure 105 of PCB substrate in addition, the lead 106 of connection electrode structure and led chip pin is characterized in that heat sink 102 upper surface also is covered with at least one metal material layer.
Described metal material layer is silver layer or gold layer or nickel dam, and the surface of this metal material layer is greater than heat sink upper surface.The metal material that is arranged on like this on heat sink not only can improve the planarization and the fineness of chip mount portion, improves the reliability that led chip lays and the light extraction efficiency of device; Also be filled in simultaneously in the space between heat sink and PCB substrate, make heat sinkly to combine closelyr, improve the reliability of device substrate with the PCB substrate.
Described electrode structure such as Fig. 4, electrode structure 105 comprises the electric conducting material 107 that passes the PCB substrate, be arranged on the top electrodes 108 and the bottom electrode 109 that is arranged on the PCB base lower surface of PCB upper surface of base plate, described electric conducting material 107 electrically connects with top electrodes 108 and bottom electrode 109 respectively.Electrode is worn the PCB substrate and is directly introduced the bottom like this, and it is long-pending better to reduce the LED lamp body.Electric conducting material 107 can be wherein a kind of metal materials such as aluminium, copper.
The shape of described electrode such as Fig. 5, electrode be shaped as strip, also can be circle, other shapes such as arc contact better to realize switching on electrical lead.
A kind of great power LED device that the utility model provides, the heat that is produced during the work of its led chip, by heat sink structure can be very fast with its transmission, make it have better radiating effect; Be installed in the electrode structure on the PCB substrate, do not need to be arranged to the outwards pin form of protrusion, reduced encapsulation volume greatly, do not need to take larger volume when it is installed, be convenient to it and carry out secondary light-distribution.The setting of heat sink surface metal material makes the smooth more brighter and cleaner of chip mount portion, has improved the reliability and the light extraction efficiency of device.In addition, adopt the PCB substrate, its mature production technology, processing and fabricating is simple, helps saving production cost, and enlarges the application of product.
Embodiment two:
As Fig. 6, a kind of great power LED device, comprise the PCB substrate 201 that leaves through hole, be embedded in the heat sink structure 202 in PCB substrate 201 through holes, be installed in the led chip 203 on the heat sink structure 202, optical lens 204 is arranged in PCB substrate 101 mounted on surface, be arranged on the electrode structure 205 of PCB substrate in addition, the lead 206 of connection electrode structure and led chip pin, heat sink 202 upper surface also is covered with at least one metal material layer, and described metal material layer is silver layer or gold layer or nickel dam.
The lower surface of described heat sink structure is provided with the specific heat big metal material layer 207 of surface area that avales.This lower surface metal material not only can be used for enlarging the contact area of heat sink structure and radiator, can also serve as a heat sink loading end, further improves the reliability of device.
Described electrode structure comprises the top electrodes that is arranged on the PCB upper surface of base plate, the bottom electrode that is arranged on the PCB base lower surface, and the conductive layer that is arranged on the PCB substrate side surfaces and electrically connects with described top electrodes and bottom electrode respectively.It does not need to design the through hole that other being used to connects the top and bottom electrode on the PCB substrate, makes its structure simpler.
Described optical lens 204 is the optical texture of 120 degree bright dippings.It is shaped as shelled peanut shape structure.Make the LED lamp launch a rectangular light spot, be more suitable for being used on some application products that rectangle luminous intensity distribution demand is arranged.
Embodiment three:
As Fig. 7, a kind of great power LED device, comprise the PCB substrate 301 that leaves through hole, be embedded in the heat sink structure 302 in PCB substrate 301 through holes, be installed in the led chip 303 on the heat sink structure 302, optical lens 304 arranged, be arranged on the electrode structure 305 of PCB substrate in addition in PCB substrate 301 mounted on surface, the lead 306 of connection electrode structure and led chip pin, heat sink 302 upper surface also is covered with at least one metal material layer.
The sectional area of described heat sink structure increases progressively gradually from the top to the bottom.Described heat sink structure is a round platform or prismatic or step-like.Both saving the raw-material while like this, the heat that led chip produces can conducted easily again, thereby help improving the product range of application.
Described optical lens is the optical texture of 120 degree bright dippings.Optical lens be shaped as semicircular structure.Certainly, the shape of optical lens also can be arranged to the reflector structure, and it comprises the reflector that is arranged on the PCB substrate and is arranged on the interior packing colloid of reflector.Reflector can be arranged to the cup shape of 120 degree solid angle openings, and the top of reflector also can be provided with other package lens and control light, to improve product optically focused performance.
Adopt the structure of the utility model execution mode, the overall dimension of PCB substrate can be set to 3.5mm * 3.5mm or 3.0mm * 3.0mm, better realizes the miniaturization of the single product of LED device.
Claims (10)
1. great power LED device, comprise the PCB substrate (101) that leaves through hole, be embedded in the heat sink structure (102) in PCB substrate (101) through hole, be installed in the led chip (103) on the heat sink structure (102), in PCB substrate (101) mounted on surface optical lens (104) is arranged, be arranged on the electrode structure (105) of PCB substrate in addition, the lead of connection electrode structure and led chip pin (106), it is characterized in that the upper surface of heat sink (102) also is covered with at least one metal material layer.
2. great power LED device according to claim 1, it is characterized in that, described electrode structure (105) comprises the electric conducting material (107) that passes the PCB substrate, be arranged on the top electrodes (108) and the bottom electrode (109) that is arranged on the PCB base lower surface of PCB upper surface of base plate, described electric conducting material (107) electrically connects with top electrodes (108) and bottom electrode (109) respectively.
3. great power LED device according to claim 1, it is characterized in that, described electrode structure comprises the top electrodes that is arranged on the PCB upper surface of base plate, the bottom electrode that is arranged on the PCB base lower surface, and the conductive layer that is arranged on the PCB substrate side surfaces and electrically connects with described top electrodes and bottom electrode respectively.
4. great power LED device according to claim 1 is characterized in that the sectional area of described heat sink structure increases progressively gradually from the top to the bottom.
5. according to the described great power LED device of power claim 1, it is characterized in that described heat sink structure is that round platform is prismatic or step-like.
6. great power LED device according to claim 1 is characterized in that, the lower surface of described heat sink structure is provided with the specific heat big metal material layer of surface area (207) that avales.
7. according to claim 1 or 6 described great power LED devices, it is characterized in that described metal material layer is silver layer or gold layer or nickel dam.
8. according to the described great power LED device of claim 1, it is characterized in that described optical lens is the optical texture of 120 degree bright dippings.
9. described according to Claim 8 great power LED device is characterized in that, described optical lens be shaped as shelled peanut shape structure or semicircular structure or reflector structure.
10. according to the described great power LED device of claim 1, it is characterized in that described optical lens comprises the reflector that is arranged on the PCB substrate and is arranged on the interior packing colloid of described reflector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205686594U CN201820800U (en) | 2010-10-20 | 2010-10-20 | High-power LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205686594U CN201820800U (en) | 2010-10-20 | 2010-10-20 | High-power LED device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201820800U true CN201820800U (en) | 2011-05-04 |
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ID=43918744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205686594U Expired - Lifetime CN201820800U (en) | 2010-10-20 | 2010-10-20 | High-power LED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201820800U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610735A (en) * | 2012-04-01 | 2012-07-25 | 广州大学 | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device |
| CN105355759A (en) * | 2015-12-11 | 2016-02-24 | 江苏鸿佳电子科技有限公司 | Single-side light emission package LED |
| CN111029896A (en) * | 2019-12-23 | 2020-04-17 | 常州纵慧芯光半导体科技有限公司 | Encapsulation structure of TOF module of EEL laser and manufacturing method thereof |
| CN111189003A (en) * | 2020-02-21 | 2020-05-22 | 松山湖材料实验室 | Transmission type white light device |
| CN112768432A (en) * | 2020-12-31 | 2021-05-07 | 中国电子科技集团公司第五十五研究所 | Microfluid adapter plate integrated with high-power radio frequency chip and preparation method thereof |
-
2010
- 2010-10-20 CN CN2010205686594U patent/CN201820800U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610735A (en) * | 2012-04-01 | 2012-07-25 | 广州大学 | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device |
| CN102610735B (en) * | 2012-04-01 | 2014-08-13 | 广州大学 | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device |
| CN105355759A (en) * | 2015-12-11 | 2016-02-24 | 江苏鸿佳电子科技有限公司 | Single-side light emission package LED |
| CN111029896A (en) * | 2019-12-23 | 2020-04-17 | 常州纵慧芯光半导体科技有限公司 | Encapsulation structure of TOF module of EEL laser and manufacturing method thereof |
| CN111189003A (en) * | 2020-02-21 | 2020-05-22 | 松山湖材料实验室 | Transmission type white light device |
| CN112768432A (en) * | 2020-12-31 | 2021-05-07 | 中国电子科技集团公司第五十五研究所 | Microfluid adapter plate integrated with high-power radio frequency chip and preparation method thereof |
| CN112768432B (en) * | 2020-12-31 | 2022-04-01 | 中国电子科技集团公司第五十五研究所 | Microfluid adapter plate integrated with high-power radio frequency chip and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110504 |