CN201796943U - Led chip structure - Google Patents
Led chip structure Download PDFInfo
- Publication number
- CN201796943U CN201796943U CN2010205146971U CN201020514697U CN201796943U CN 201796943 U CN201796943 U CN 201796943U CN 2010205146971 U CN2010205146971 U CN 2010205146971U CN 201020514697 U CN201020514697 U CN 201020514697U CN 201796943 U CN201796943 U CN 201796943U
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- led chip
- type layer
- reflection
- infrared
- substrate
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Abstract
The utility model discloses an LED chip structure. The LED chip structure comprises a substrate, an N type layer covering one side of the front side of the substrate, a first lead-out electrode electrically connected with the N type layer, a P type layer covering one side of the front side of the N type layer, a transparent conductive film covering one side of the front side of the P type layer and a second lead-out electrode electrically connected with the transparent conductive film, and one side of the reverse side of the substrate is covered with a reflection and infrared transmission ray filter; and the reflection and infrared transmission ray filter has high reflection and infrared transmission effect to the wave band of the light sent by the LED chip. By the LED chip structure, the light quantity of the LED chip is improved, the thermal concentration of the LED chip is reduced, the temperature of the LED chip is lowered, and the service life is prolonged.
Description
Technical field
The utility model relates to a kind of led chip structure of high light-emitting rate.
Background technology
Light-emitting diode (LED) has been widely used in illumination, traffic, advertisement and instrument and meter, in the displays such as liquid crystal back lighting owing to its brightness height, low in energy consumption, characteristics such as the life-span is long, reliability is high, easy driving, energy-saving and environmental protection.Produce in the world at present and use LED to present the trend that rises rapidly, also the light extraction efficiency of LED is had higher requirement simultaneously.The restriction of light extraction efficiency also is the main cause that causes the LED junction temperature to raise, and along with the operating time of LED and the increase of operating current, its luminous intensity and luminous flux can descend, and the life-span reduces.
The front of existing led chip generally adopts ITO as nesa coating, ascribe high-permeability and the good electrical conductivity of ITO at visible light wave range to, yet ITO is bigger at the absorption coefficient of infrared band, causes the temperature rise on led chip surface.The reverse side of led chip then generally adopts the silver-plated or reflecting plate of aluminizing, and plays reflection backlight and heat conduction, owing to adopt the mode of direct reflection, therefore in the absorption that has to a certain degree also increased infrared band, causes junction temperature to raise.
Summary of the invention
The utility model purpose is: a kind of led chip structure is provided, and the INFRARED ABSORPTION that it has weakened the led chip front has reduced the led chip surface temperature; Strengthen the reflex of the luminous wave band reverse side of led chip, made reverse side spill light and be reflected back toward led chip, reduced the loss of light, improved utilance backlight, increased the light extraction efficiency of led chip; Also strengthen the infrared breathability of the luminous wave band reverse side of led chip in addition, further reduced the working temperature of led chip, prolonged its working life.
The technical solution of the utility model is: a kind of led chip structure, comprise substrate, cover N type layer, first extraction electrode that is electrically connected with described N type layer of described substrate face one side, the P type layer that covers the positive side of described N type layer, the nesa coating that covers the positive side of described P type layer and second extraction electrode that is electrically connected with described nesa coating, described substrate reverse side one side is coated with reflection and infrared permeation filter; Described reflection and infrared permeation filter have high reflection and infrared permeation effect to the wave band of the light that described led chip sends.
Further, in above-mentioned led chip structure, described nesa coating is the series membranes system that infrared or a part of infrared bands such as Zn (Al) O series, Zn (Ga) O series or Zn (B) O see through.These films system does not have infrared ray and absorbs or absorb less, is used for replacing the ITO film that nearly all is absorbed and is converted into heat infrared, can reduce the absorption of led chip surface temperature.
Further, in above-mentioned led chip structure, described reflection and infrared permeation filter increase anti-film for what at least two kinds of transparent oxide films mainly not waited by refractive index or transparent fluoride films constituted.Described transparent oxide film can be SiO
2, TiO
2Deng; Described transparent fluoride films can be MgF
2, CaF
2Deng.Its basic principle is according to increasing anti-pleurodiaphragmatic in terspace reason, be light when continuing to pass through the medium of two kinds of different refractivities, the reflection ray at different interfaces produces interference effect, when optical path difference is the even-multiple of 1/2nd wavelength, reverberation is interfered the back intensity enhancing, obtains the reflection enhancement effect.With the transparent reflection of specific wavelength and the metal film of infrared permeation filter replacement prior art, the reflection and the heat radiation of led chip reverse side have been increased.
The utility model has the advantages that:
1. the utility model has infrared nothing absorption or absorbs less film system as nesa coating positive employing of led chip, has weakened the absorption of led chip to infrared light, has reduced the surface temperature of led chip.
2. the utility model is provided with high reflection and infrared permeation filter at the led chip reverse side, the special wavelength light reflected back substrate that will spill from the substrate reverse side, and infrared light is seen through, both increased the light extraction efficiency of led chip, reduce the working temperature of led chip again, prolonged the working life of LED.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further described:
Fig. 1 is the utility model led chip structural representation;
Fig. 2 is ITO and Zn (Al) O
2Film dichroism correlation curve figure;
Fig. 3 is high reflection of visible light general wave band of all kinds or white and infrared permeation filter dichroism curve chart;
Fig. 4 is high reflection of blue look wave band and infrared permeation filter dichroism curve chart;
Fig. 5 is high reflection of green wave band and infrared permeation filter dichroism curve chart;
Fig. 6 is high reflection of red wave band and infrared permeation filter dichroism curve chart;
Fig. 7 is high reflection of colour mixture wave band and infrared permeation filter dichroism curve chart.
Wherein: 1 substrate; 2N type layer; 3 first extraction electrodes; 4P type layer; 5 nesa coatings; 6 second extraction electrodes; 7 reflection and infrared permeation filters.
Embodiment
Embodiment:
As shown in Figure 1, a kind of led chip structure, comprise substrate 1, cover the N type layer 2 of described substrate 1 a positive side, first extraction electrode 3 that is electrically connected with described N type layer 2, the P type layer 4 that covers described N type layer 2 a positive side, cover the nesa coating 5 of described P type layer 4 a positive side and second extraction electrode 6 that is electrically connected with described nesa coating 5, emit after the light that described led chip produces penetrates nesa coating 5.Described substrate 1 reverse side one side is coated with reflection and infrared permeation filter 7; The wave band of the light that 7 pairs of described led chips of described reflection and infrared permeation filter send has high reflection and infrared permeation effect.
Described substrate 1 is a Sapphire Substrate.
The series membranes system that described nesa coating 5 sees through for infrared or a part of infrared bands such as Zn (Al) O series, Zn (Ga) O series or Zn (B) O.As can be seen from Figure 2, when light penetrates the ITO film, have only the light of visible region to see through, the light of region of ultra-red then is absorbed fully, and when adopting Zn (Al) O
2During for nesa coating, infrared light and visible light all obtain good transmitance.Therefore adopt Zn (Al) O
2Substitute ITO as nesa coating, can avoid the surface temperature rise that causes because of INFRARED ABSORPTION.
Described reflection and infrared permeation filter 7 increases anti-film for what at least two kinds of transparent oxide films mainly not waited by refractive index or transparent fluoride films constituted, it is pairing to increase anti-wavelength to be designed to the light wavelength sent with led chip consistent, and see through fully at infrared band, to prevent because INFRARED ABSORPTION causes the temperature rise of reverse side.Fig. 3～Fig. 7 is respectively at the reflection of the luminous wave band design of difference and the dichroism curve of infrared permeation filter, known to figure, has all obtained the high permeability of high reflectance and infrared band at required luminous wave band.Therefore, by designing dissimilar reflections and infrared permeation filter, demand with the led chip that satisfies different luminous wave bands, can strengthen the backlight utilance of led chip at its luminous wave band, and reduce the influence that INFRARED ABSORPTION is brought, very useful to light extraction efficiency and the reduction junction temperature that improves led chip.
Below only be concrete exemplary applications of the present utility model, protection range of the present utility model is not constituted any limitation.In addition to the implementation, the utility model can also have other execution mode.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop within the utility model scope required for protection.
Claims (2)
1. led chip structure, it is characterized in that: comprise substrate (1), cover the positive side of described substrate (1) N type layer (2), first extraction electrode (3) that is electrically connected with described N type layer (2), cover the positive side of described N type layer (2) P type layer (4), cover the nesa coating (5) of the positive side of described P type layer (4) and second extraction electrode (6) that is electrically connected with described nesa coating (5), described substrate (1) reverse side one side be coated with the reflection and infrared permeation filter (7).
2. led chip structure according to claim 1 is characterized in that: described reflection and infrared permeation filter (7) increase anti-film for what at least two kinds of transparent oxide films mainly not waited by refractive index or transparent fluoride films constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205146971U CN201796943U (en) | 2010-08-25 | 2010-08-25 | Led chip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205146971U CN201796943U (en) | 2010-08-25 | 2010-08-25 | Led chip structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201796943U true CN201796943U (en) | 2011-04-13 |
Family
ID=43851844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205146971U Expired - Fee Related CN201796943U (en) | 2010-08-25 | 2010-08-25 | Led chip structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201796943U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941325A (en) * | 2014-03-28 | 2014-07-23 | 京东方科技集团股份有限公司 | Light guide plate, manufacturing method of light guide plate, backlight module and display device |
| CN110456572A (en) * | 2019-08-28 | 2019-11-15 | 合肥京东方光电科技有限公司 | A kind of lamp plate and preparation method thereof, backlight module and liquid crystal display device |
-
2010
- 2010-08-25 CN CN2010205146971U patent/CN201796943U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941325A (en) * | 2014-03-28 | 2014-07-23 | 京东方科技集团股份有限公司 | Light guide plate, manufacturing method of light guide plate, backlight module and display device |
| CN103941325B (en) * | 2014-03-28 | 2016-03-30 | 京东方科技集团股份有限公司 | Light guide plate and preparation method thereof, backlight module and display device |
| CN110456572A (en) * | 2019-08-28 | 2019-11-15 | 合肥京东方光电科技有限公司 | A kind of lamp plate and preparation method thereof, backlight module and liquid crystal display device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: TANG JIAN Effective date: 20111221 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111221 Address after: 201102, room 32, No. 425, Lane 401, Lianhua Road, Shanghai, Minhang District Patentee after: Liu Cui Address before: 201102, room 32, No. 425, Lane 401, Lianhua Road, Shanghai, Minhang District Co-patentee before: Tang Jian Patentee before: Liu Cui |
|
| ASS | Succession or assignment of patent right |
Owner name: OPTORUN (SHANGHAI) CO., LTD. Free format text: FORMER OWNER: LIU CUI Effective date: 20120109 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201102 MINHANG, SHANGHAI TO: 200436 BAOSHAN, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120109 Address after: 200436 Shanghai City, Baoshan City Industrial Park City Yin Road No. 267 Patentee after: Optorun (Shanghai) Co.,Ltd. Address before: 201102, room 32, No. 425, Lane 401, Lianhua Road, Shanghai, Minhang District Patentee before: Liu Cui |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110413 Termination date: 20160825 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |