The utility model content
The utility model provides a kind of chip circuit that utilizes horizontal pad and vertical pad rational deployment, to make full use of the excess area that brings owing to the storage array scrambling, the scaled down version area of pictural surface makes the access speed performance of chip increase to a certain extent on the basis that does not reduce other performances of chip simultaneously to reduce cost.
For achieving the above object, the utility model provides a kind of chip circuit that utilizes horizontal pad and vertical pad rational deployment, and this chip circuit comprises:
Storage array; This storage array is provided with some projections and some sunk parts;
Be arranged on above-mentioned storage array peripheral circuit on one side; This peripheral circuit is connected with the storage array circuit;
It is characterized in that this chip circuit also comprises the some horizontal pad of the protuberance office that is arranged on storage array; And,
Be arranged on some vertical pad of the depressed part office of storage array;
Above-mentioned horizontal pad and vertically pad respectively with above-mentioned storage array and peripheral circuit between circuit be connected.
The width of above-mentioned horizontal pad is greater than vertical pad; The height of this vertical pad is greater than horizontal pad.
The size shape of above-mentioned some horizontal pads and the projection of storage array are suitable.
The size shape of above-mentioned some vertical pads and the sunk part of storage array are suitable.
The utility model is a kind of to utilize horizontal pad to compare with prior art with the chip circuit of vertical pad rational deployment, its advantage is, the utility model is provided with some horizontal pads and vertical pad, laterally pad and vertically the combination of pad just in time reach complementary with the irregular limit projection and the sunk part of storage array, vertically pad has made full use of the area of the sunk part on the irregular limit of storage array; Projection on the irregular limit of storage array is provided with the height that horizontal pad has then reduced the entire chip domain, reduced the area of entire chip domain, reduced chip cost, simultaneously, owing to do not have vacant area of the prior art, so effectively prevented the waste of area or the decline of circuit performance.While, wiring distance from the pad to the peripheral circuit and time-delay were also shortened to some extent owing to the chip layout height reduces, thereby had promoted the access speed of chip.
Embodiment
Below in conjunction with description of drawings embodiment of the present utility model.
Each embodiment of circuit layout among Fig. 2, Fig. 3 and Fig. 4, do not represent the circuit devcie layout type of a complete chip, just a part wherein is used to highlight a kind of architectural feature of utilizing its circuit layout of chip circuit of horizontal pad and vertical pad rational deployment of the utility model.
As shown in Figure 2, the utility model provides a kind of chip circuit that utilizes horizontal pad and vertical pad rational deployment, and it comprises storage array 201, and is arranged on the peripheral circuit 204 on storage array 201 sides, some horizontal pads 203 and vertical pad 202.This storage array 201 is " 7 " font, and one bar limit is irregular limit, and this irregular limit is provided with a projection and a sunk part.Peripheral circuit 204 is pressed close to a straight flange setting of storage array 201, simultaneously, exists circuit to be connected between peripheral circuit 204 and the storage array 201.
Be provided with the horizontal pad 203 of several settings parallel to each other in the protuberance office on storage array 201 irregular limits, be provided with vertical pad 202 of some settings parallel to each other in the depressed part office on storage array 201 irregular limits, simultaneously, laterally a limit of pad 203 and vertical pad 202 all parallels with the limit of storage array 201.Laterally pad 203 and vertical pad 202 exist circuit to be connected respectively with between storage array 201 and the peripheral circuit 204, and the partial circuit of forming memory chip connects and device layout.
The transverse width of horizontal pad 203 is greater than vertical pad 202, and vertical height of vertical pad 202 is greater than described horizontal pad 203.The shape size of some horizontal pads 203 is suitable with the projection on storage array 201 irregular limits, and the sunk part on the size shape of some vertical pads 202 and storage array 201 irregular limits is suitable.Simultaneously because vertically pad 202 and laterally pad 203 length difference in height, filled up on the storage array 201 irregular limits poor between the projection and sunk part, after layout was finished, laterally pad 203 and vertical pad 202 remained on the same straight line with respect to the outside of storage array 201.
As shown in Figure 3, utilize the another kind of embodiment of the chip circuit of horizontal pad and vertical pad rational deployment for the utility model is a kind of.It comprises storage array 201, and is arranged on the peripheral circuit 204 on storage array 201 sides, some horizontal pads 203 and vertical pad 202.This storage array 201 is " protruding " font, and one bar limit is irregular limit, and a projection is arranged on the middle part on irregular limit, and two sunk parts are arranged on the both sides of projection.Peripheral circuit 204 is pressed close to a straight flange setting of storage array 201, simultaneously, exists circuit to be connected between peripheral circuit 204 and the storage array 201.
Be provided with the horizontal pad 203 of several settings parallel to each other in the protuberance office at middle part, storage array 201 irregular limit, be provided with vertical pad 202 of some settings parallel to each other in the depressed part office of both sides, storage array 201 irregular limit, simultaneously, laterally a limit of pad 203 and vertical pad 202 all parallels with the limit of storage array 201.Horizontal pad 203 and vertically exist circuit to be connected between pad 202 and storage array 201 and the peripheral circuit 204, the partial circuit connection and the device layout of formation memory chip.
The transverse width of horizontal pad 203 is greater than vertical pad 202, and vertical height of vertical pad 202 is greater than described horizontal pad 203.The shape size of some horizontal pads 203 is suitable with the projection on storage array 201 irregular limits, and the sunk part on the size shape of some vertical pads 202 and storage array 201 irregular limits is suitable.Simultaneously because vertically pad 202 and laterally pad 203 length difference in height, filled up on the storage array 201 irregular limits poor between the projection and sunk part, after layout was finished, laterally pad 203 and vertical pad 202 remained on the same straight line with respect to the outside of storage array 201.
As shown in Figure 4, utilize the another kind of embodiment of the chip circuit of horizontal pad and vertical pad rational deployment for the utility model is a kind of.It comprises storage array 201, and is arranged on the peripheral circuit 204 on storage array 201 sides, some horizontal pads 203 and vertical pad 202.This storage array 201 is " recessed " font, and one bar limit is irregular limit, and a sunk part is arranged on the middle part on irregular limit, and two projections are separately positioned on the both sides of irregular limit sunk part.Peripheral circuit 204 is pressed close to a straight flange setting of storage array 201, simultaneously, exists circuit to be connected between peripheral circuit 204 and the storage array 201.
Be provided with the horizontal pad 203 of several settings parallel to each other in the protuberance office of both sides, storage array 201 irregular limit, be provided with vertical pad 202 of some settings parallel to each other in the depressed part office at middle part, storage array 201 irregular limit, simultaneously, laterally a limit of pad 203 and vertical pad 202 all parallels with the limit of storage array 201.Horizontal pad 203 and vertically exist circuit to be connected between pad 202 and storage array 201 and the peripheral circuit 204, the partial circuit connection and the device layout of formation memory chip.
The transverse width of horizontal pad 203 is greater than vertical pad 202, and vertical height of vertical pad 202 is greater than described horizontal pad 203.The shape size of some horizontal pads 203 is suitable with the projection on storage array 201 irregular limits, and the sunk part on the size shape of some vertical pads 202 and storage array 201 irregular limits is suitable.Simultaneously because vertically pad 202 and laterally pad 203 length difference in height, filled up on the storage array 201 irregular limits poor between the projection and sunk part, after layout was finished, laterally pad 203 and vertical pad 202 remained on the same straight line with respect to the outside of storage array 201.
The utility model adopts vertical pad 202 to fill up the area of the sunk part on storage array 201 irregular limits, made full use of the area of the sunk part on storage array 201 irregular limits, projection on storage array 201 irregular limits is provided with horizontal pad 203 simultaneously, then reduced the height of entire chip domain, remedy the sunk part on storage array 201 irregular limits and the difference in height between the projection, can again not take the domain space more.On the prior art basis, more efficient use the domain space of the irregular memory chip of array, reduced chip cost thereby reduced chip area; This layout type has effectively prevented the decline of the chip performance that the fractionation circuit causes in addition; Owing to reduced chip height, shortened peripheral circuit 204 and made the access speed of chip make moderate progress simultaneously to the wiring distance between horizontal pad 203 and the vertical pad 202.
Although content of the present utility model has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to restriction of the present utility model.After those skilled in the art have read foregoing, for multiple modification of the present utility model with to substitute all will be conspicuous.Therefore, protection range of the present utility model should be limited to the appended claims.