CN201716136U - MEMS pressure-sensitive chip - Google Patents
MEMS pressure-sensitive chip Download PDFInfo
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- CN201716136U CN201716136U CN2010201669509U CN201020166950U CN201716136U CN 201716136 U CN201716136 U CN 201716136U CN 2010201669509 U CN2010201669509 U CN 2010201669509U CN 201020166950 U CN201020166950 U CN 201020166950U CN 201716136 U CN201716136 U CN 201716136U
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Abstract
The utility model provides an MEMS (Micro-electromechanical Systems) pressure-sensitive chip, which has the advantages of effectively enhanced stability of the chip, small error and high accuracy. The MEMS pressure-sensitive chip comprises a silicon chip, a substrate, a sensitive resistor distribution area and an external electrical connecting piece used for the sensitive resistor distribution area; and the MEMS pressure-sensitive chip is characterized in that the substrate concretely adopts a substrate silicon chip, wherein shallow slots are respectively formed in the center of the upper surface and in the center of the lower surface of the substrate silicon chip, an oxidizing layer of SiO2 is arranged on the upper surface of the substrate silicon chip, and the bottom surface of the silicon chip is bonded on the upper surface of the substrate silicon chip.
Description
Technical field
The utility model relates to microelectromechanical systems (MEMS) art of pressure sensors, is specially a kind of MEMS presser sensor chip.
Background technology
Micromechanics Sensitive Apparatus based on microelectromechanical systems (MEMS) is little with its volume, cost is low, simple in structure, can advantage be used widely and develop rapidly with treatment circuit is integrated etc.
The MEMS pressure transducer, it is the earliest commercial product in the microelectromechanical systems (MEMS), because the MEMS presser sensor chip has advantages such as output signal is big, signal Processing is simple, obtained application more and more widely, MEMS presser sensor chip in the market, it comprises MEMS relative pressure sensitive chip, MEMS absolute pressure sensitive chip, wherein MEMS absolute pressure sensitive chip with vacuum as benchmark, having encapsulated a vacuum chamber in the sensor, is benchmark with the vacuum in this vacuum chamber; The cavity of MEMS relative pressure sensitive chip bottom can be communicated with certain pressure interface, with this interface that certain pressure is arranged as benchmark.
At present presser sensor chip mainly adopts the chip of silicon-glass bonding, however since the expansion coefficient of silicon and glass do not match, its deflection difference when being stressed, the easy instability of build-up of pressure sensitive chip, thereby cause that its error is big, precision is low.
The utility model content
At the problems referred to above, the utility model provides a kind of MEMS presser sensor chip, and it can effectively improve the stability of chip, and its error is little, precision is high.
Its technical scheme is such:
A kind of MEMS presser sensor chip, it comprises silicon chip, substrate, sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging, it is characterized in that: described substrate is specially silicon substrate, the upper surface of described silicon substrate and the core of lower surface all have shallow slot, and the upper surface of described silicon substrate is silicon dioxide (SiO
2) oxide layer, the bottom surface of described silicon chip is bonded to the upper surface of described silicon substrate.
It is further characterized in that:
The front of described silicon chip is placed with sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging;
Described sensitive resistance comprises voltage dependent resistor (VDR), P in arranging and distinguishing
+Connection, metal lead wire;
Described MEMS presser sensor chip is a MEMS relative pressure sensitive chip, and described its air hole of relative pressure sensitive chip runs through described silicon substrate;
Described air hole is positioned at the center of described shallow slot.
In the utility model, because the bottom surface of silicon chip is bonded to the upper surface of described silicon substrate, so the material of upper strata silicon chip and substrate of bottom portion silicon chip is silicon, when stressed, because its expansion coefficient is identical, and then its deflection is identical, so it can effectively improve the stability of chip, its error is little, precision is high.
Description of drawings
Fig. 1 is the structural representation of MEMS absolute pressure sensitive chip front view,
Fig. 2 is the structural representation of MEMS relative pressure sensitive chip front view.
Embodiment
Specific embodiment one: MEMS absolute pressure sensitive chip
Its structure is seen Fig. 1: it comprises that silicon chip 1, substrate, sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging (belongs to existing mature technology, do not draw among the figure), substrate is specially silicon substrate 2, the upper surface of silicon substrate 2 and the core of lower surface all have shallow slot 3, and the upper surface of silicon substrate 2 is SiO
2Oxide layer 4, the bottom surface of silicon chip 1 is bonded to the upper surface of silicon substrate 2; Silicon chip 1 front is coated with silicon dioxide (SiO successively
2) oxide layer 9 and silicon nitride layer 10, the front of silicon chip 1 is placed with sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging; Sensitive resistance comprises voltage dependent resistor (VDR) 5, P in arranging and distinguishing
+ Connection 6, metal lead wire 7.
Specific embodiment two: MEMS relative pressure sensitive chip
Its structure is seen Fig. 2: it comprises that silicon chip 1, substrate, sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging (belongs to existing mature technology, do not draw among the figure), substrate is specially silicon substrate 2, the upper surface of silicon substrate 2 and the core of lower surface all have shallow slot 3, and the upper surface of silicon substrate 2 is SiO
2Oxide layer 4, the bottom surface of silicon chip 1 is bonded to the upper surface of silicon substrate 2; Silicon chip 1 front is coated with silicon dioxide (SiO successively
2) oxide layer 9 and silicon nitride layer 10, the front of silicon chip 1 is placed with sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging; Sensitive resistance comprises voltage dependent resistor (VDR) 5, P in arranging and distinguishing
+ Connection 6, metal lead wire 7; Air hole 8 runs through silicon substrate 2; Air hole 8 is positioned at the center of shallow slot 3.
Claims (5)
1. MEMS presser sensor chip, it comprises silicon chip, substrate, sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging, it is characterized in that: described substrate is specially silicon substrate, the upper surface of described silicon substrate and the core of lower surface all have shallow slot, and the upper surface of described silicon substrate is silicon dioxide (SiO
2) oxide layer, the bottom surface of described silicon chip is bonded to the upper surface of described silicon substrate.
2. a kind of MEMS presser sensor chip according to claim 1 is characterized in that: the front of described silicon chip is placed with sensitive resistance district, the sensitive resistance district's external electrical web member of arranging of arranging.
3. a kind of MEMS presser sensor chip according to claim 1 and 2 is characterized in that: described sensitive resistance comprises voltage dependent resistor (VDR), P in arranging and distinguishing
+Connection, metal lead wire.
4. a kind of MEMS presser sensor chip according to claim 1 is characterized in that: described MEMS presser sensor chip is a MEMS relative pressure sensitive chip, and described its air hole of relative pressure sensitive chip runs through described silicon substrate.
5. a kind of MEMS presser sensor chip according to claim 4, it is characterized in that: described air hole is positioned at the center of described shallow slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201669509U CN201716136U (en) | 2010-04-22 | 2010-04-22 | MEMS pressure-sensitive chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201669509U CN201716136U (en) | 2010-04-22 | 2010-04-22 | MEMS pressure-sensitive chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201716136U true CN201716136U (en) | 2011-01-19 |
Family
ID=43462140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201669509U Expired - Fee Related CN201716136U (en) | 2010-04-22 | 2010-04-22 | MEMS pressure-sensitive chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201716136U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825505A (en) * | 2010-04-22 | 2010-09-08 | 无锡市纳微电子有限公司 | MEMS pressure sensitive chip and manufacturing method thereof |
| WO2012122875A1 (en) * | 2011-03-15 | 2012-09-20 | 迈尔森电子（天津）有限公司 | Mems pressure sensor and manufacturing method therefor |
| CN107588871A (en) * | 2017-08-23 | 2018-01-16 | 安徽工程大学 | A kind of novel evacuated micro-electronics pressure sensor |
-
2010
- 2010-04-22 CN CN2010201669509U patent/CN201716136U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825505A (en) * | 2010-04-22 | 2010-09-08 | 无锡市纳微电子有限公司 | MEMS pressure sensitive chip and manufacturing method thereof |
| CN101825505B (en) * | 2010-04-22 | 2015-02-18 | 无锡市纳微电子有限公司 | MEMS pressure sensitive chip and manufacturing method thereof |
| WO2012122875A1 (en) * | 2011-03-15 | 2012-09-20 | 迈尔森电子（天津）有限公司 | Mems pressure sensor and manufacturing method therefor |
| US9073746B2 (en) | 2011-03-15 | 2015-07-07 | Memsen Electronics Inc | MEMS pressure sensor and manufacturing method therefor |
| CN107588871A (en) * | 2017-08-23 | 2018-01-16 | 安徽工程大学 | A kind of novel evacuated micro-electronics pressure sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110119 Termination date: 20170422 |