CN201713572U - Multilayer film deposition device - Google Patents
Multilayer film deposition device Download PDFInfo
- Publication number
- CN201713572U CN201713572U CN2010202154571U CN201020215457U CN201713572U CN 201713572 U CN201713572 U CN 201713572U CN 2010202154571 U CN2010202154571 U CN 2010202154571U CN 201020215457 U CN201020215457 U CN 201020215457U CN 201713572 U CN201713572 U CN 201713572U
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- Prior art keywords
- gas
- multilayer film
- gas mass
- mass flow
- flow
- Prior art date
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- 230000008021 deposition Effects 0.000 title claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 84
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052786 argon Inorganic materials 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 25
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000007733 ion plating Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000010891 electric arc Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 22
- 239000010936 titanium Substances 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QFUKUPZJJSMEGE-UHFFFAOYSA-N 5-(hydroxymethyl)-1-(3-methylbutyl)pyrrole-2-carbaldehyde Chemical compound CC(C)CCN1C(CO)=CC=C1C=O QFUKUPZJJSMEGE-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
The utility model belongs to the technical field of ultrahard multilayer coating deposition on the surfaces of metal materials and particularly relates to a Ti/TiN multilayer film deposition device. In the multilayer film deposition device, the ultrahard multilayer film can be deposited by starting an electric arc evaporation source through alternatively importing different gases in same vacuum chamber, and the precision control of the multilayer film thickness can be realized. A gas mass and flow controller, a time relay and a gas mass and flow indicator are connected on a pipeline of the deposition device, which is used for importing argon gas and nitrogen gas, and the gas mass and flow controller is connected with the time relay which is connected with the gas mass and flow indicator. The utility model solves the problem of uneven thickness of each unit layer among the multi layers due to the adoption of the manual control of gas flow when the arc ion plating is used for plating depositing multilayer film, and realizes the alternative importing of multi-paths of gases such as argon gas, nitrogen gas and the like by adopting the gas mass and flow controller, thereby ensuring the accuracy control of the thickness of unit layers so as to meet the requirements on improving the hardness and the abrasive resistance of the deposited ultrahard multilayer film.
Description
Technical field:
The utility model belongs to metal material surface and deposits superhard laminated coating technical field, is specially the deposition apparatus of a kind of titanium/titanium nitride multilayer film.It is in same vacuum chamber, by alternately feeding gas with various, opens arc evaporation source and deposits superhard multilayer film, can realize the accurate control of multilayer film thickness, to improve multilayer film hardness and wear resistance.
Background technology:
At present, it is preceding that the deposition of multilayer film generally adopts rotational workpieces to arrive corresponding target (as pure titanium or chromium target), or alternately feed gas with various (as Ar and N
2) etc. method, can realize the deposition of multilayer film (the former as TiN/CrN, the latter such as Ti/TiN).And, then need to adopt the latter's method to carry out for the multilayer film of Ti/TiN metalloid/nitride (also can be metal and carbide or boride etc. other mechanically resistant material constitute) type.Especially the superhard multilayer film of metal/nitride type because metal is compound, make the toughness of film and film substrate bond strength improve greatly.But owing in film deposition process, need alternately feed Ar and N
2Deng gas, the general gas meter that adopts can only be controlled respectively every road gas, replacing in the feeding process at gas like this makes gas pressure in vacuum have fluctuation, gas flow has fluctuation in the ordinary course of things, make every layer thickness have certain fluctuation, and then influence value modulation period (each is to the thickness of layer) of multilayer film, cause certain influence for mechanical property such as multilayer film hardness.
The utility model content
The purpose of this utility model is to provide a kind of deposition apparatus of accurately controlling the multilayer film of multipath gas flow automatically, each unit layer problem in uneven thickness in the multilayer that adopts manual pilot-gas flow when having solved the electric arc ion-plating deposition multilayer film and cause, adopt the gas mass flow amount controller to realize alternately feeding of multipath gas such as argon gas, nitrogen, thereby guarantee the accurate control of unit layer thickness, so that sedimentary superhard multilayer film reach the requirement that improves hardness and wear resistance.
The technical solution of the utility model is:
A kind of deposition apparatus of multilayer film, on the pipeline of this deposition apparatus feeding argon gas and nitrogen, be connected to gas mass flow amount controller, the time relay and gaseous mass Flow Measurement Display Meter, gas mass flow amount controller tie-time rly., the time relay connects the gas mass flow display instrument.
The beneficial effects of the utility model are:
1, the utility model be synthetic at rapid steel or carbide surface be the ganoine thin film of the titanium/titanium nitride multilayered structure of elementary cell by the titanium layer of 15～55nm and the titanium nitride layer of 25～60nm, film unit Thickness Control precision is compared with manual mode and is improved a lot, precision reaches ± 5nm, multilayer film hardness reaches 40GPa simultaneously, and film-substrate cohesion reaches more than the 70N.
2, adopt the utility model can realize the accurate control that argon gas and nitrogen flow alternately feed, can set up alternately feeding flow and replacing the feeding time of argon gas, nitrogen on their own, argon gas and nitrogen can alternately feed each 30 times, and then realize the deposition of 60 layers of titanium/titanium nitride multilayer film.
3, the gas flow of the related gas with various of the utility model replaces the control accuracy that control techniques can improve the unit layer thickness of multilayer film, can effectively improve performances such as the preparation quality of multilayer film and hardness, wear resistance.
Description of drawings:
Fig. 1 is the block diagram of gas mass flow control.
Fig. 2 is the schematic circuit of gas mass flow control.
Embodiment:
As shown in Figure 1, on the pipeline that feeds argon gas and nitrogen, be connected to gas mass flow amount controller, the time relay and gaseous mass Flow Measurement Display Meter, gas mass flow amount controller tie-time rly., the alternately feeding time of argon gas and nitrogen is set by the time relay, the time relay connects the gas mass flow display instrument, and the gas mass flow display instrument is used to show gas flow.
With putting on the sample table of arc ion plating behind rapid steel workpiece process grinding and polishing, the cleaning-drying, treat that vacuum tightness reaches 1 * 10 in the vacuum chamber
-2Pa～5 * 10
-3During Pa, open the gas mass flow amount controller, between logical argon gas to 0.5～2Pa, matrix add dc negative bias voltage to-500V～-the 1000V scope, sample is carried out aura cleaned 5～10 minutes, then, adjust the Ar airshed, make gas pressure in vacuum be adjusted into 0.2～0.6Pa, open the titanium arc simultaneously, arc stream is stabilized in 50～100A, and sample was carried out Ti+ ion bombardment 1～5 minute; After this, enter the multilayer film deposition process, at first adjust substrate bias and be-100～-the 400V scope, setting air pressure is 0.1～1.0Pa;
Open gas mass flow amount controller shown in Figure 1, adopt the time relay to set alternately feeding time and total depositing time of argon gas and nitrogen, set argon gas and nitrogen flow and be respectively required flow (10～200sccm), setting the different layers alternating deposit time (determines according to sedimentation rate, do not wait as 30s～5min, occurrence is determined according to thickness in monolayer and sedimentation rate), total number of plies is set at 10～60 layers, set and feed argon gas earlier, depositing Ti, after the Ti deposition, the gas mass flow amount controller can stop argon gas automatically, is converted to automatic feeding nitrogen and comes the depositing TiN layer, can stop the logical argon gas of nitrogen after the TiN layer deposition more automatically, so alternately repeat, total depositing time is 30～120 minutes.After deposition finished, the gas flow feeding can be closed automatically, closes substrate bias rapidly, closes titanium arc power switch, continued to be evacuated to sample and cooled to the furnace below 50 ℃, and coating process finishes.When alternately feeding by the gas mass flow amount controller, argon gas and nitrogen then obtains titanium layer and titanium nitride layer respectively, alternately ventilate repeatedly and then obtain the multilayered structure that superposes that repeats of titanium and titanium nitride layer, and the time of alternately ventilating has determined the element thickness of each individual layer, and total number of plies of unit layer depends on total depositing time; Last one deck finishes with logical nitrogen cvd nitride layer.
As shown in Figure 2, the circuit composition and the annexation of the control of the utility model gas mass flow are as follows:
The power supply phase line output of 220V connects K switch 1, connect a electronic clock then with timing closing function, the on-delay of electronic clock tie-time relay1 coil KT2 disconnects moving disconnected (normally closed) contact KT2-1, KT2-1 is connected with the time relay KT1 of parallel connection and the coil of KT2, takes back zero-power line then.In addition, the closed moving valve control switch that (often opening) contact KT1-1 connects gas flow control that closes of the on-delay of time relay KT1 makes gas feed vacuum chamber when KT1-1 is closed, and gas stops to feed during disconnection.At first connect power supply, gas flow valve control switch, set gas flow, open K switch 1 then, with the total depositing time T of clock setting, the delay time of setting-up time relay K T1 and KT2 is respectively t1, t2 simultaneously, and t1＜t2; Open clock switch then, electric current flows through clock, KT2-1 makes KT1 coil and the conducting of KT2 coil.When through t1 after the time, the KT1-1 closure, gas begins to feed; When arriving t2 during the time, KT2-1 disconnects, and KT1 and KT2 cut off the power supply simultaneously, and KT1-1 disconnects, and gas stops to feed, and finishes a gas and feeds, and the feeding time is t2-t1; Simultaneously, reset immediately after the KT2-1 outage, become conducting state immediately, begin to enter circulation next time, behind the total depositing time T that arrives clock setting, clock switch disconnects, and deposition process finishes.This process can realize that a kind of interruption alternate cycles of gas feeds, and the gas single feeding time is t2-t1, and the feeding number of times is T/t2 (feeding number of times promptly to planting the depositing of thin film number of plies).
This circuit can realize that the interruption alternate cycles of a kind of gas (gas 1) feeds, the interruption alternate cycles of another kind of gas (gas 2) feeds and is then controlled by identical therewith circuit, different is, and gas 1 feeds and when stopping to feed, the stopping of corresponding respectively gas 2 feeds and the feeding stage, to realize alternately feeding of gas 1 and gas 2.
Adopt the gas mass flow display instrument to have following features:
The gas mass flow display instrument that one, the utility model adopt can be used for working power is provided and sets, showing for gas mass flow controller or mass flowmenter. Have multichannel display respectively, characteristics such as setting respectively.
Its two, the gas mass flow display instrument can be realized separate work, also can be used. Display instrument forms with charactron, can preserve three kinds of technologies according to different needs, and every kind of technology can be set 60 layers, and the selection of every layer of gas flow, time, flow controller can arbitrarily be set, and can press the operation key and automatically finish. So just can realize realizing the accurate control of the thickness of metal/nitride Super-hard Multi-layer Thin Films by alternately passing into the gases such as argon gas or nitrogen, guarantee plural layers preparation quality and performance.
Its three, the gas mass flow display instrument adopts microcomputerized control, serial communication, digital analog compatible. Can control respectively 3 road gas flows, and can independently show, automatically operation.
Its four, the gas mass flow display instrument is configured on the arc ion plating or magnetic-controlled sputtering coating equipment of any standard.
Claims (1)
1. the deposition apparatus of multilayer film, it is characterized in that: on the pipeline of this deposition apparatus feeding argon gas and nitrogen, be connected to gas mass flow amount controller, the time relay and gaseous mass Flow Measurement Display Meter, gas mass flow amount controller tie-time rly., the time relay connects the gas mass flow display instrument.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202154571U CN201713572U (en) | 2010-06-04 | 2010-06-04 | Multilayer film deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202154571U CN201713572U (en) | 2010-06-04 | 2010-06-04 | Multilayer film deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201713572U true CN201713572U (en) | 2011-01-19 |
Family
ID=43459572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202154571U Expired - Fee Related CN201713572U (en) | 2010-06-04 | 2010-06-04 | Multilayer film deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201713572U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630725A (en) * | 2013-11-07 | 2015-05-20 | 中国科学院兰州化学物理研究所 | TiN/Ti/Si/Ti multi-layer wear-resistant corrosion-resistant thin film material and preparation method thereof |
| CN112779516A (en) * | 2020-12-22 | 2021-05-11 | 苏州恒之清生物科技有限公司 | Crystalline silicon microneedle with hard coating protection and preparation method thereof |
-
2010
- 2010-06-04 CN CN2010202154571U patent/CN201713572U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630725A (en) * | 2013-11-07 | 2015-05-20 | 中国科学院兰州化学物理研究所 | TiN/Ti/Si/Ti multi-layer wear-resistant corrosion-resistant thin film material and preparation method thereof |
| CN104630725B (en) * | 2013-11-07 | 2017-04-26 | 中国科学院兰州化学物理研究所 | TiN/Ti/Si/Ti multi-layer wear-resistant corrosion-resistant thin film material and preparation method thereof |
| CN112779516A (en) * | 2020-12-22 | 2021-05-11 | 苏州恒之清生物科技有限公司 | Crystalline silicon microneedle with hard coating protection and preparation method thereof |
| CN112779516B (en) * | 2020-12-22 | 2024-03-08 | 苏州恒之清生物科技有限公司 | Crystal silicon microneedle with hard coating protection and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110119 Termination date: 20150604 |
|
| EXPY | Termination of patent right or utility model |