CN201681808U - Inner lead embedded flip chip package structure with surface of heat slug protruding - Google Patents

Inner lead embedded flip chip package structure with surface of heat slug protruding Download PDF

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Publication number
CN201681808U
CN201681808U CN2010201158062U CN201020115806U CN201681808U CN 201681808 U CN201681808 U CN 201681808U CN 2010201158062 U CN2010201158062 U CN 2010201158062U CN 201020115806 U CN201020115806 U CN 201020115806U CN 201681808 U CN201681808 U CN 201681808U
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CN
China
Prior art keywords
chip
heat
metal
inner lead
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2010201158062U
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Chinese (zh)
Inventor
王新潮
梁志忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
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Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN2010201158062U priority Critical patent/CN201681808U/en
Application granted granted Critical
Publication of CN201681808U publication Critical patent/CN201681808U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to an inner lead embedded flip chip package structure with the surface of a heat slug protruding, which comprises a chip (3), a metal inner lead (4) which is arranged below the chip and used for supporting, a metal bump (10) for interconnecting signals between the chip and the metal inner lead, a conductive or nonconductive heat-conduction binding material I (2) between the chip and the metal inner lead and a plastic package member (8), wherein the metal inner lead (4) is embedded into the plastic package member (8); the heat slug (7) is disposed above the chip (3); a conductive or nonconductive heat-conduction binding material II (6) is embedded between the heat slug (7) and the chip (3); and the surface of the heat slug (7) protrudes outside the plastic package member (8). The heat slug which is additionally arranged above the chip is used for radiating high heat, and the inner lead embedded flip chip package structure with the surface of the heat slug protruding has high capability of providing heat dissipation, and is capable of quickly conducting heat of the chip outside the plastic package member.

Description

Interior pin is imbedded the flip-chip heat dissipation block surface protuberance packaging structure
(1) technical field
The utility model relates to a kind of interior pin and imbeds flip-chip heat dissipation block surface protuberance packaging structure and method for packing thereof.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type (as shown in Figures 3 and 4)
Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of strong interior pin of heat dissipation capability that can provide to imbed flip-chip heat dissipation block surface protuberance packaging structure and method for packing thereof.
The purpose of this utility model be achieved in that a kind of in pin imbed the flip-chip heat dissipation block surface protuberance packaging structure, include conduction or nonconducting heat conduction bonding material I and plastic-sealed body between pin in the metal that is carried of chip, chip below, the chip interior pin of metal coupling, chip and metal that the signal interconnection of pin is used in the metal, pin is imbedded plastic-sealed body in the described metal, above described chip, be provided with radiating block, be equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; The plastic packaging material outside is protruded on the surface of described radiating block.
The beneficial effects of the utility model are:
The utility model is served as the function of the heat radiation of high heat by addition radiating block above chip, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 imbeds flip-chip heat dissipation block surface protuberance packaging structure schematic diagram for pin in the utility model.
Reference numeral among the figure:
Pin 4, conduction or nonconducting heat conduction bonding material II 6, radiating block 7, plastic-sealed body 8, metal coupling 10 in conduction or nonconducting heat conduction bonding material I 2, chip 3, the metal.
(5) embodiment
Referring to Fig. 5, Fig. 5 imbeds flip-chip heat dissipation block surface protuberance packaging structure schematic diagram for pin in the utility model.As seen from Figure 5, pin is imbedded the flip-chip heat dissipation block surface protuberance packaging structure in the utility model, include conduction or nonconducting heat conduction bonding material I 2 and plastic-sealed body 8 between pin 4 in the metal that is carried of chip 3, chip below, the chip interior pin of metal coupling 10, chip and metal that the signal interconnection of pin is used in the metal, pin 4 is imbedded plastic-sealed body 8 in the described metal, above described chip 3, be provided with radiating block 7, be equipped with conduction or nonconducting heat conduction bonding material II 6 between this radiating block 7 and the described chip 3; Plastic packaging material 8 outsides are protruded on the surface of described radiating block 7.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.
The material of described metal coupling 10 can be tin, gold or alloy etc.

Claims (3)

1. pin is imbedded the flip-chip heat dissipation block surface protuberance packaging structure in one kind, include conduction or nonconducting heat conduction bonding material I (2) and plastic-sealed body (8) between pin (4) in the metal that is carried of chip (3), chip below, the chip interior pin of metal coupling (10), chip and metal that the signal interconnection of pin is used in the metal, pin (4) is imbedded plastic-sealed body (8) in the described metal, it is characterized in that being provided with radiating block (7), be equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3) in described chip (3) top; Plastic packaging material (8) outside is protruded on the surface of described radiating block (7).
2. a kind of interior pin according to claim 1 is imbedded the flip-chip heat dissipation block surface protuberance packaging structure, and the material that it is characterized in that described radiating block (7) is copper, aluminium, pottery or alloy.
3. a kind of interior pin according to claim 1 is imbedded the flip-chip heat dissipation block surface protuberance packaging structure, and the material that it is characterized in that described metal coupling (10) is tin, gold or alloy.
CN2010201158062U 2010-01-28 2010-01-28 Inner lead embedded flip chip package structure with surface of heat slug protruding Expired - Lifetime CN201681808U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201158062U CN201681808U (en) 2010-01-28 2010-01-28 Inner lead embedded flip chip package structure with surface of heat slug protruding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201158062U CN201681808U (en) 2010-01-28 2010-01-28 Inner lead embedded flip chip package structure with surface of heat slug protruding

Publications (1)

Publication Number Publication Date
CN201681808U true CN201681808U (en) 2010-12-22

Family

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Application Number Title Priority Date Filing Date
CN2010201158062U Expired - Lifetime CN201681808U (en) 2010-01-28 2010-01-28 Inner lead embedded flip chip package structure with surface of heat slug protruding

Country Status (1)

Country Link
CN (1) CN201681808U (en)

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Granted publication date: 20101222