CN201663687U - Capacitance type micro-silicon microphone - Google Patents
Capacitance type micro-silicon microphone Download PDFInfo
- Publication number
- CN201663687U CN201663687U CN2009202661728U CN200920266172U CN201663687U CN 201663687 U CN201663687 U CN 201663687U CN 2009202661728 U CN2009202661728 U CN 2009202661728U CN 200920266172 U CN200920266172 U CN 200920266172U CN 201663687 U CN201663687 U CN 201663687U
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- CN
- China
- Prior art keywords
- capacitance type
- silicon microphone
- type minitype
- support body
- insulation support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 239000012528 membrane Substances 0.000 claims description 46
- 238000009413 insulation Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 238000013461 design Methods 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000035882 stress Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010042209 Stress Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- FZQYVWUONRVDQB-UHFFFAOYSA-N gold titanium tungsten Chemical compound [Ti][W][Au] FZQYVWUONRVDQB-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The utility model provides a capacitance type micro-silicon microphone which comprises a back electrode plate, a vibrating diaphragm and an insulated supporting body for supporting the vibrating diaphragm. The back electrode plate with conductive function is used as one electrode of a capacitor, and the vibrating diaphragm with conductive function is used as the other electrode of the capacitor. The back electrode plate is provided with a plurality of sound holes communicated with the vibrating diaphragm, the circular vibrating diaphragm comprises an outer end face and a plurality of circular arc grooves arranged at the inner side of the outer end face, the vibrating diaphragm is divided into a plurality of circular arc-shaped beams by the circular arc grooves, one end of the insulated supporting body supports the beams, the semi-diameter of the plurality of circular arc grooves is the same, and the plurality of circular arc grooves are located on the same circle. Therefore, the vibrating diaphragm is not sensitive to residual stress, the flexibility of the design is improved, and the area of a chip can be reduced under the condition that the sensitivity is the same.
Description
[technical field]
The utility model belongs to microelectromechanical systems (MEMS) field based on silicon technology, is specifically related to a kind of capacitance type minitype silicon microphone.
[background technology]
The MEMS technology is a new and high technology of high speed development in recent years, compare with traditional respective devices, the MEMS device is in volume, power consumption, weight and obvious advantages is all arranged in price, and it adopts advanced semiconductor fabrication process, can realize the batch manufacturing of MEMS device, in the market, the main application example of MEMS device comprises that pressure sensor, acceleration take into account silicon microphone etc.
For silicon microphone, it is assembled to circuit board adopts automation surface attachment process usually, this technology need experience high temperature, and the electric charge leakage at high temperature can take place traditional electret microphone (ECM), cause ECM to lose efficacy, so the assembling of ECM can only be adopted hand assembled.And capacitance type minitype silicon microphone can withstand high temperatures, so can adopt surface mount process to realize automatic assembling, capacitance type minitype silicon microphone all has superiority than ECM at aspects such as miniaturization, performance, reliability, environmental resistance, cost and volume production abilities in addition, therefore adopts the micro silicon microphone of MEMS technology manufacturing to begin to capture consumption electronic product markets such as mobile phone, PDA, MP3 and hearing aids as the substitute of ECM rapidly.
Though the research of micro silicon microphone carried out more than two decades, the method of specific implementation capacitance type minitype silicon microphone is a lot, but capacitance type minitype silicon microphone generally include one around the small air gap of vibrating membrane, back pole plate that has hole and the between fixed.Vibrating membrane adopts usually that conventional semiconducter process--deposit obtains, and material can adopt multiple or multilayer material obtains (such as doped polycrystalline silicon, metal and silicon nitride composite membrane etc.); Back pole plate can obtain by silicon substrate or by deposit, and material also can adopt multiple or multilayer material (such as doped polycrystalline silicon, metal and silicon nitride composite membrane etc.); Small air-gap can be corroded by sacrifice layer and obtain after removing, and sacrificial layer material can adopt multiple material (as silica, silicon etc.).
But, the control that subject matter is exactly vibrating film stress that micro silicon microphone faces in making.Existing film preparation means adopt deposit substantially, and can there be bigger residual stress in the vibrating membrane that obtains by deposit, generally includes two kinds of thermal mismatch stress and intrinsic stresses.Residual stress has considerable influence to the micro silicon microphone characteristic, when serious even its inefficacy can not be worked.Have, big tensile residual stresses also can significantly reduce the mechanical sensitivity of vibrating membrane again, and the mechanical sensitivity of vibrating membrane and microphone key index--sensitivity is directly proportional, therefore big residual stress will cause the reduction of sensitivity of microphone indirectly.Also have, big residual compressive stress also may cause vibrating membrane generation flexing, thereby makes the unstable even inefficacy of microphone property.
Therefore, improve sensitivity of microphone and become the focus that those skilled in the art pay close attention to, existing by adopting the method for the process conditions of improving preparation method's deposit, or adopt some additional process such as annealing to wait the residual stress that reduces vibrating membrane, but adopt this method little to the effect that reduces residual stress, and repeatability is bad, realizes also comparatively complicated; The another one approach makes vibrating membrane suspend exactly, makes the mechanical sensitivity of vibrating membrane insensitive to residual stress, but this kind mode often causes the processing technology complexity to increase.
Therefore, how to solve shortcoming that prior art exists and improve that the sensitivity of microphone is real to have become the technical task that those skilled in the art need to be resolved hurrily.
[utility model content]
The purpose of this utility model is to provide a kind of capacitance type minitype silicon microphone that possesses higher sensitivity.
To achieve these goals, the utility model capacitance type minitype silicon microphone comprises: be used for as the utmost point of electric capacity and have the back pole plate of conducting function, be used for as another utmost point of described electric capacity and have the vibrating membrane of conducting function and support the insulation support body of described vibrating membrane, described back pole plate is provided with some sound holes that are communicated with vibrating membrane, described vibrating membrane is for circular and comprise the outer face and be positioned at some arc grooves of inboard, outer face, described arc groove is divided into vibrating membrane on the beam of some circular arcs, one end of described insulation support body supports described beam, and the radius of described some arc grooves is all identical and be positioned on the same circumference.
The utility model capacitance type minitype silicon microphone vibrating membrane is set to circle, more meet acoustic characteristic, simultaneously, the beam that connects vibrating membrane is provided with circular arc, can make vibrating membrane insensitive and improve design flexibility, under identical sensitivity situation, can reduce area of chip simultaneously residual stress.
[description of drawings]
The three-dimensional combination figure of the capacitance type minitype silicon microphone that Fig. 1 is disclosed for the utility model first execution mode.
Fig. 2 is the part three-dimensional exploded view of capacitance type minitype silicon microphone shown in Figure 1.
Fig. 3 is the three-dimensional combination figure behind the cut angle of capacitance type minitype silicon microphone shown in Figure 1.
Fig. 4 is the front view of the capacitance type minitype silicon microphone behind the cut angle shown in Figure 3.
Three-dimensional combination figure behind the cut angle of capacitance type minitype silicon microphone that Fig. 5 is disclosed for the utility model second execution mode.
The three-dimensional combination figure of the capacitance type minitype silicon microphone that Fig. 6 is disclosed for the utility model the 3rd execution mode.
Fig. 7 is the front view of the capacitance type minitype silicon microphone behind the cut angle shown in Figure 6.
The three-dimensional combination figure of the capacitance type minitype silicon microphone that Fig. 8 is disclosed for the utility model the 4th execution mode.
The three-dimensional combination figure of the capacitance type minitype silicon microphone that Fig. 9 is disclosed for the utility model the 5th execution mode.
Figure 10 is the capacitance type minitype silicon microphone that disclosed among Fig. 9 cutaway view along A-A line direction.
Three-dimensional combination figure behind the cut angle of capacitance type minitype silicon microphone that Figure 11 is disclosed for the utility model the 6th execution mode.
Figure 12 is the three-dimensional combination figure of another angle of Figure 11.
[embodiment]
First execution mode:
See also Fig. 1 to shown in Figure 4, the utility model capacitance type minitype silicon microphone 100 comprised the mechanical support effect substrate 1, be formed on the substrate 1 and in order to as back-etching from stop stopping layer 2 certainly, be formed at from stop the back pole plate 3 on the layer 2, the vibrating membrane 4, the support vibrating membrane 4 that are provided with at interval with back pole plate 3 and be fixed in some insulation support bodies 5 on the back pole plate 3 and two respectively with first, second metal pressure points 6,7 of vibrating membrane 4, back pole plate 3 conductings.
Described substrate 1 is made (as monocrystalline silicon) by semi-conducting material, and it is provided with back of the body chamber 10, and described back of the body chamber 10 is run through the back side 11 of substrate 1 and upwards run through from stopping layer 2.Described back of the body chamber 10 can be set to circular or square or other shapes, is used to conduct the decline acoustical behavior of type silicon microphone 100 of sound and control capacittance.
Describedly 2 can make, and when being used for that deep etching is finished overleaf, play from stopping effect not being etched with protection back pole plate 3 for materials such as silica or silicon nitrides from stopping layer.
Described back pole plate 3 has conducting function and is used for the utmost point as electric capacity, and described back pole plate 3 is provided with some sound holes of running through 31, and described sound hole 31 can be set to circular or square and is arranged into array by the shape of vibrating membrane 4 according to actual demand.Described sound hole 31 is communicated with back of the body chamber 10.
See also Fig. 1 to shown in Figure 3, described vibrating membrane 4 is set to circle, can reduce volume on the one hand, more fits in acoustical behavior on the other hand, thereby makes capacitance type minitype silicon microphone 100 possess sensitivity preferably.Described vibrating membrane 4 comprises outer face 41, is positioned at some arc grooves 42 and some slits 43 that is communicated with arc groove 42 respectively and outwards runs through outer face 41 of 41 inboards, outer face.Described outer face 41 is an arc surface.Described arc groove 42 is a minor arc, and the radius of all arc grooves 42 is all identical and be positioned on the same circumference.Described slit 43 is along the radially extension of vibrating membrane 4.Described arc groove 42 and slit 43 form vibrating membrane 4 on the beam 44 of four circular arcs.Described beam 44 is an identical material with vibrating membrane 4.Described beam 44 is cantilever-shaped, and promptly an end of beam 44 is unsettled is free end 441, with the susceptibility of 4 pairs of residual stresss of reduction vibrating membrane, thus the sensitivity that improves capacitance type minitype silicon microphone 100.Simultaneously, under the situation of identical sensitivity, can reduce the area of vibrating membrane 4, reduce area of chip thereby reach.
The material of described back pole plate 3 and vibrating membrane 4 is respectively electric conducting material and a kind of by in the composite membrane of electric conducting material and insulating material combination, adds materials such as silicon nitride as polysilicon, polysilicon silicon nitride, polysilicon oxidation silicon composite membrane and metal.
One end of described insulation support body 5 is near the free end 441 of beam 44.One end of described insulation support body 5 supports described beam 44, and the other end is fixed on back pole plate 3 or the substrate 1.Described insulation support body 5 can be materials such as silica or silicon nitride.In this enforcement execution mode, described insulation support body 5 is cylindric, certainly, implements in the execution mode at other, and described insulation support body 5 also can be arranged to prism-shaped.
The described first metal pressure point 6 electrically connects with vibrating membrane 4, and the described second metal pressure point 7 electrically connects with back pole plate 3, and described first, second metal pressure point 6,7 is used for follow-up packing routing.Described metal can be aluminium, gold, chromium gold, titanium tungsten gold etc.In this enforcement execution mode, described first, second metal pressure point 6,7 is circular, certainly, implements in the execution mode at other, and described first, second metal pressure point 6,7 can also be set to other polygons such as rectangle.The described first metal pressure point 6 electrically conducts with beam 44, and the surface of the first metal pressure point, 6 outstanding beams 44.
Second execution mode:
See also shown in Figure 5, the capacitance type minitype silicon microphone 100 that the capacitance type minitype silicon microphone 200 that the utility model second execution mode is disclosed and first execution mode are disclosed is basic identical, both differences are that capacitance type minitype silicon microphone 100 is provided with four beams 44 and supports four insulation support bodies 5 of four beams 44 respectively, and capacitance type minitype silicon microphone 200 is provided with six beams 201 and support six insulation support bodies 202 of six beams 201 respectively, can realize the purpose of this utility model equally.
The 3rd execution mode:
See also Figure 6 and Figure 7, the capacitance type minitype silicon microphone 100 that the capacitance type minitype silicon microphone 300 that the utility model the 3rd execution mode is disclosed and first execution mode are disclosed is basic identical, both differences are that capacitance type minitype silicon microphone 100 is provided with four beams 44 and supports four insulation support bodies 5 of four beams 44 respectively, and capacitance type minitype silicon microphone 300 only is provided with two beams 301 and support two insulation support bodies 302 of two beams 301 respectively.The length that described beam 301 extends is longer, and near half girth of vibrating membrane 4, therefore, beam 301 possesses better elasticity, thereby better absorption of residual residue stress, the sensitivity of raising capacitance type minitype silicon microphone 300.Because it is less relatively that the support strength of 302 pairs of vibrating membranes 4 of two insulation support bodies only is set, described capacitance type minitype silicon microphone 300 also is provided with second insulation support body 303 that supports vibrating membrane 4 centers.
The 4th execution mode:
See also shown in Figure 8, the capacitance type minitype silicon microphone 100 that the capacitance type minitype silicon microphone 400 that the utility model the 4th execution mode is disclosed and first execution mode are disclosed is basic identical, both differences are that capacitance type minitype silicon microphone 400 is not provided with slit 43, that is to say, capacitance type minitype silicon microphone 400 formed beams 401 are simply supported beam in fact, and promptly the two ends of beam 401 are all fixed.At this moment, the pars intermedia 403 of described insulation support body 402 brace summers 401.
The 5th execution mode:
See also Fig. 9 and shown in Figure 10, the capacitance type minitype silicon microphone 400 that capacitance type minitype silicon microphone 500 that the utility model the 5th execution mode is disclosed and the 4th execution mode are disclosed is basic identical, both differences are that capacitance type minitype silicon microphone 500 only is provided with an insulation support body 501 and are cylindric, make a circle in the week of described insulation support body 501 and all support described beam 502.
The 6th execution mode:
See also Figure 11 and shown in Figure 12, the capacitance type minitype silicon microphone 100 that the capacitance type minitype silicon microphone 600 that the utility model the 6th execution mode is disclosed and first execution mode are disclosed is basic identical, both differences are that capacitance type minitype silicon microphone 600 remains the material 601 of vibrating membrane 4 peripheries, and the capacitance type minitype silicon microphone 100 that first execution mode is disclosed has been removed this material 601.Certainly, when the capacitance type minitype silicon microphone volume requirement was not strict, capacitance type minitype silicon microphone 600 also can use and this capacitance type minitype silicon microphone 600 can be realized the purpose of this utility model equally.
In sum, for the person of ordinary skill of the art, that is done under instruction of the present utility model changes at equivalence of the present utility model, must be included in the scope that the utility model claim advocated.
Claims (10)
1. a capacitance type minitype silicon microphone comprises: be used for as the utmost point of electric capacity and have the back pole plate of conducting function, be used for as another utmost point of described electric capacity and have the vibrating membrane of conducting function and support the insulation support body of described vibrating membrane, described back pole plate is provided with some sound holes that are communicated with vibrating membrane, it is characterized in that: described vibrating membrane is for circular and comprise the outer face and be positioned at some arc grooves of inboard, outer face, described arc groove is divided into vibrating membrane on the beam of some circular arcs, one end of described insulation support body supports described beam, and the radius of described some arc grooves is all identical and be positioned on the same circumference.
2. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: the two ends of described beam are all fixed, and described beam is all supported in making a circle in week that described insulation support body is cylindric and described insulation support body.
3. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: the two ends of described beam are all fixed, and described insulation support body is a plurality of, the pars intermedia of corresponding beam of each insulation support body and insulation support body brace summer.
4. capacitance type minitype silicon microphone as claimed in claim 1, it is characterized in that: described vibrating membrane is provided with some slits that are communicated with arc groove respectively and outwards run through the outer face so that an end of described beam is unsettled, and described beam is provided with the free end of an end of free end and described insulation support body near beam.
5. capacitance type minitype silicon microphone as claimed in claim 4 is characterized in that: described capacitance type minitype silicon microphone is provided with second insulation support body at the center of supporting vibrating membrane.
6. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: described beam and vibrating membrane are identical material, and the other end of described insulation support body is fixed on the back pole plate; Described capacitance type minitype silicon microphone also is provided with first, second metal pressure point that is formed at respectively on beam and the back pole plate, and wherein, the first metal pressure point and beam electrically conduct, and the second metal pressure point and back pole plate electrically conduct.
7. capacitance type minitype silicon microphone as claimed in claim 6 is characterized in that: the described first metal pressure point is the surface of circle or polygon and outstanding beam.
8. capacitance type minitype silicon microphone as claimed in claim 1, it is characterized in that: described capacitance type minitype silicon microphone comprises substrate and is positioned at and stops layer certainly on the substrate, described substrate is provided with the back of the body chamber that is communicated with the sound hole, and described back pole plate is formed at from stopping on the layer.
9. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: described insulation support body is cylinder or prism.
10. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: described arc groove is a minor arc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202661728U CN201663687U (en) | 2009-10-29 | 2009-10-29 | Capacitance type micro-silicon microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202661728U CN201663687U (en) | 2009-10-29 | 2009-10-29 | Capacitance type micro-silicon microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201663687U true CN201663687U (en) | 2010-12-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202661728U Expired - Lifetime CN201663687U (en) | 2009-10-29 | 2009-10-29 | Capacitance type micro-silicon microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201663687U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103686570A (en) * | 2013-12-31 | 2014-03-26 | 瑞声声学科技(深圳)有限公司 | MEMS (micro electro mechanical system) microphone |
| CN104469578A (en) * | 2013-09-13 | 2015-03-25 | 欧姆龙株式会社 | Acoustic transducer and microphone |
| CN104469640A (en) * | 2013-09-13 | 2015-03-25 | 欧姆龙株式会社 | Acoustic transducer and microphone |
| CN111885467A (en) * | 2020-07-09 | 2020-11-03 | 诺思(天津)微系统有限责任公司 | MEMS piezoelectric speaker |
-
2009
- 2009-10-29 CN CN2009202661728U patent/CN201663687U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104469578A (en) * | 2013-09-13 | 2015-03-25 | 欧姆龙株式会社 | Acoustic transducer and microphone |
| CN104469640A (en) * | 2013-09-13 | 2015-03-25 | 欧姆龙株式会社 | Acoustic transducer and microphone |
| CN104469640B (en) * | 2013-09-13 | 2017-12-05 | 欧姆龙株式会社 | Sound converter and microphone |
| CN104469578B (en) * | 2013-09-13 | 2018-01-02 | 欧姆龙株式会社 | Sound converter and microphone |
| CN103686570A (en) * | 2013-12-31 | 2014-03-26 | 瑞声声学科技(深圳)有限公司 | MEMS (micro electro mechanical system) microphone |
| CN103686570B (en) * | 2013-12-31 | 2017-01-18 | 瑞声声学科技(深圳)有限公司 | MEMS (micro electro mechanical system) microphone |
| CN111885467A (en) * | 2020-07-09 | 2020-11-03 | 诺思(天津)微系统有限责任公司 | MEMS piezoelectric speaker |
| CN111885467B (en) * | 2020-07-09 | 2021-09-21 | 诺思(天津)微系统有限责任公司 | MEMS piezoelectric speaker |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 99 building NW-09 No. 215425 in Jiangsu Province, Suzhou City Industrial Park Jinji Lake Avenue 102 Patentee after: MEMSENSING MICROSYSTEMS (SUZHOU, CHINA) CO., LTD. Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215425 No. 218 BioBAY A2 floor 213B room Patentee before: Suzhou MEMSensing Microsystems Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20101201 |
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| CX01 | Expiry of patent term |