CN201655942U - C-wave band frequency-splitting filter - Google Patents
C-wave band frequency-splitting filter Download PDFInfo
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- CN201655942U CN201655942U CN2009203532141U CN200920353214U CN201655942U CN 201655942 U CN201655942 U CN 201655942U CN 2009203532141 U CN2009203532141 U CN 2009203532141U CN 200920353214 U CN200920353214 U CN 200920353214U CN 201655942 U CN201655942 U CN 201655942U
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- frequency demultiplexer
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- frequency
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- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
The utility model discloses a C-wave band frequency-splitting filter, comprising a frequency-splitting filter chip, a frequency-splitting filter box and input and output SMA joints, wherein the frequency-splitting filter chip is a high-temperature superconductive frequency-splitting filter chip, a substrate is made of magnesia (MgO), high-temperature superconductive YBCO films are sputtered on two surfaces of the substrate, gold films are sputtered on site on the high-temperature superconductive films, high-temperature superconductive films and gold films on one surface are reserved fully and the surface is taken as a ground plane, the input and output portion on the other surface is the gold films and the other part is a high temperature superconductive microstrip transmission line, a T-shaped joint and a wave filter, which are made of high temperature superconduction YBCO films and are connected to form the circuit of the high temperature superconduction frequency-splitting filter chip in a branch line structure. According to the utility model, the bandpass insertion loss and corrugation is less, thus improving the interception probability, anti-interference capability and sensitivity of a Channelized receiver.
Description
Affiliated technical field:
The utility model relates to a kind of microwave device, is specifically related to a kind of C-band frequency demultiplexer, is mainly used in channelized receiver, investigation receiver and radar etc., carries out frequency division and handles.
Background technology:
Traditional frequency demultiplexer is the demand of incompatibility WeiLai Technology development, main cause is that channelized receiver is in order to improve intercept probability, antijamming capability and sensitivity, simultaneously also to improve the Signal Processing ability, therefore must widen channelized receiver frequency measurement scope, improve frequency-measurement accuracy, increase the progression of the number of channel and filter.This is the inevitable choice that satisfies above Technical Development Requirement.But can cause the interior ripple of channel Insertion Loss, channel of receiver and performance index such as the consistency variation to a certain extent of channel like this.
Summary of the invention:
In order to widen channelized receiver frequency measurement scope, to improve frequency-measurement accuracy, the purpose of this utility model is to provide a kind of C-band frequency demultiplexer, and it can solve performance index such as the consistency problem of variation to a certain extent that causes ripple and channel in the channel Insertion Loss, channel of receiver owing to the progression that increases the number of channel and filter.
The technical scheme that its technical problem that solves the utility model adopts: a kind of C-band frequency demultiplexer, comprise frequency demultiplexer chip, frequency demultiplexer box body, an input sub-miniature A connector and three output sub-miniature A connectors, described frequency demultiplexer chip places in the frequency demultiplexer box body, and its input, output interface link to each other with the output sub-miniature A connector with the input sub-miniature A connector respectively.Described frequency demultiplexer chip is a high-temperature superconductor frequency demultiplexer chip, adopts magnesium oxide (MgO) as substrate, at substrate two sides sputter high-temperature superconductor yttrium barium copper oxide (YBCO) film, and in-situ sputtering gold film on high-temperature superconducting thin film; Wherein Yi Mian high-temperature superconducting thin film and golden film all keep, as ground plane; The input of another side, output electrode partly are golden film, high-temperature superconductive micro-strip transmission line, T connector and filter that remainder is made for the HTS YBCO film; The high temperature superconduction wave filter of high-temperature superconductive micro-strip transmission line and two T connectors and three channels is connected to form the high-temperature superconductor frequency demultiplexer chip circuit of branch line version.
Described high-temperature superconductor yttrium barium copper oxide (YBCO) film is the 4500-5500 dust, and described golden film is the 450-550 dust, and the characteristic impedance of frequency demultiplexer is 47-53 Ω.
Described high-temperature superconductor frequency demultiplexer chip is welded on the base of described frequency demultiplexer box body by the indium sheet.
Described frequency demultiplexer box body adopts titanium plate (rod) material; Described input, output inner wire are the stainless steel of diameter of phi 0.2mm, and insulator is the tetrafluoroethene material.
The beneficial effects of the utility model: adopt the high-temperature superconductor frequency demultiplexer chip circuit of branch line version, make that logical in-band insertion loss and ripple are little, thereby improve channelized receiver intercept probability, antijamming capability and sensitivity.
Description of drawings:
Below in conjunction with accompanying drawing and example the utility model is further specified:
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is the utility model high-temperature superconductor frequency demultiplexer chip circuit structural representation;
Fig. 3 is the insertion loss and the standing wave composite diagram of three channels of the present utility model;
Fig. 4 is the insertion loss and the standing wave pattern of the utility model channel 1;
Fig. 5 is the insertion loss and the standing wave pattern of the utility model channel 2;
Fig. 6 is the insertion loss and the standing wave pattern of the utility model channel 3.
Among the figure: 1,2,3 are the output sub-miniature A connector, 4 is high-temperature superconductor frequency demultiplexer chip, 5 is the frequency demultiplexer box body, 6 are the input sub-miniature A connector, 7-1,7-2,7-3 are output electrode, 7-4, are input electrode, and 8-1,8-2,8-3 are the high-temperature superconductive micro-strip transmission line, 9-1,9-2 are T connector, and 10-1,10-2,10-3 are filter.
Embodiment:
In Fig. 1, input sub-miniature A connector 6 and output sub-miniature A connector 1,2,3 are installed on the sidewall of frequency demultiplexer box body 5, fix with screw; Frequency demultiplexer box body 5 is made up of Bottom of box body, sidewall and lid three parts, fixes with screw between Bottom of box body and box side wall, box side wall and lid; High-temperature superconductor frequency demultiplexer chip 4 is welded on the Bottom of box body by the thick indium sheet of 0.1mm, and the input of high-temperature superconductor frequency demultiplexer chip 4, output link to each other with output sub-miniature A connector 1,2,3 with input sub-miniature A connector 6 respectively.Below the working temperature 77K.
Fig. 2 is high-temperature superconductor frequency demultiplexer chip circuit figure.High-temperature superconductor frequency demultiplexer chip adopts the MgO substrate, at substrate two sides sputter 5000 dust high-temperature superconductor yttrium barium copper oxide (YBCO) films, the golden film of 500 dusts on in-situ sputtering on the high-temperature superconducting thin film then.Make circuitous pattern by technologies such as photoetching, dry etching, cuttings, in preparation process, wherein Yi Mian high-temperature superconducting thin film and golden film all keep, as ground plane, the input electrode 7-4 of another side, output electrode 7-1,7-2,7-3 partly are golden film, high-temperature superconductive micro-strip transmission line 8-1,8-2,8-3, T connector 9-1,9-2 and filter 10-1,10-2,10-3 that remainder is made for the HTS YBCO film.The high temperature superconduction wave filter of high-temperature superconductive micro-strip transmission line and two T connectors and three channels is connected to form the circuit of the high-temperature superconductor frequency demultiplexer chip of branch line version.The thickness of high-temperature superconductor yttrium barium copper oxide (YBCO) film can change in 4500-5500 dust scope; The thickness of gold film can change in 450-550 dust scope.
The high-temperature superconductor frequency demultiplexer chip preparation that the utility model is implemented is on the MgO substrate of 2 inches of Φ, be operated in below the 77K temperature, frequency division is three channels, and channel interpolation is gone into loss less than 0.2dB, return loss is better than 15dB, and the outer 50MHz of channel strip suppresses greater than 50dB.
Because the low surface resistivity of high-temperature superconductor, thereby the integration problem of solution microwave frequency demultiplexer makes frequency demultiplexer reach integrated, improves the performance of microwave frequency demultiplexer, reduces the channel Insertion Loss and is with outer the inhibition with improving, referring to Fig. 3-6.
Claims (4)
1. C-band frequency demultiplexer, comprise frequency demultiplexer chip, frequency demultiplexer box body, an input sub-miniature A connector and three output sub-miniature A connectors, described frequency demultiplexer chip places in the frequency demultiplexer box body, its input, output interface link to each other with the output sub-miniature A connector with the input sub-miniature A connector respectively, it is characterized in that described frequency demultiplexer chip is a high-temperature superconductor frequency demultiplexer chip, adopt magnesium oxide (MgO) as substrate, at substrate two sides sputter high-temperature superconductor yttrium barium copper oxide (YBCO) film, in-situ sputtering gold film on high-temperature superconducting thin film; Wherein Yi Mian high-temperature superconducting thin film and golden film all keep, as ground plane; The input of another side, output electrode partly are golden film, high-temperature superconductive micro-strip transmission line, T connector and filter that remainder is made for the HTS YBCO film; The high temperature superconduction wave filter of high-temperature superconductive micro-strip transmission line and two T connectors and three channels is connected to form the circuit of the high-temperature superconductor frequency demultiplexer chip of branch line version.
2. C-band frequency demultiplexer according to claim 1 is characterized in that described high-temperature superconductor yttrium barium copper oxide (YBCO) film is the 4500-5500 dust, and described golden film is the 450-550 dust, and the characteristic impedance of frequency demultiplexer is 47-53 Ω.
3. C-band frequency demultiplexer according to claim 1 is characterized in that described high-temperature superconductor frequency demultiplexer chip is welded on the base of described frequency demultiplexer box body by the indium sheet.
4. C-band frequency demultiplexer according to claim 1 is characterized in that described frequency demultiplexer box body adopts the titanium panel material; Described input, output inner wire are the stainless steel of diameter of phi 0.2mm, and insulator is the tetrafluoroethene material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009203532141U CN201655942U (en) | 2009-12-29 | 2009-12-29 | C-wave band frequency-splitting filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009203532141U CN201655942U (en) | 2009-12-29 | 2009-12-29 | C-wave band frequency-splitting filter |
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| Publication Number | Publication Date |
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| CN201655942U true CN201655942U (en) | 2010-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009203532141U Expired - Fee Related CN201655942U (en) | 2009-12-29 | 2009-12-29 | C-wave band frequency-splitting filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728612A (en) * | 2009-12-29 | 2010-06-09 | 中国电子科技集团公司第十六研究所 | C waveband frequency divider |
| CN108493546A (en) * | 2018-02-02 | 2018-09-04 | 综艺超导科技有限公司 | A kind of broadband superconduction frequency demultiplexer |
-
2009
- 2009-12-29 CN CN2009203532141U patent/CN201655942U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728612A (en) * | 2009-12-29 | 2010-06-09 | 中国电子科技集团公司第十六研究所 | C waveband frequency divider |
| CN108493546A (en) * | 2018-02-02 | 2018-09-04 | 综艺超导科技有限公司 | A kind of broadband superconduction frequency demultiplexer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101124 Termination date: 20141229 |
|
| EXPY | Termination of patent right or utility model |