CN204119185U - A kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module - Google Patents
A kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module Download PDFInfo
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- CN204119185U CN204119185U CN201420507956.6U CN201420507956U CN204119185U CN 204119185 U CN204119185 U CN 204119185U CN 201420507956 U CN201420507956 U CN 201420507956U CN 204119185 U CN204119185 U CN 204119185U
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- low
- temperature
- temperature switch
- frequency
- sma connector
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- 239000002887 superconductor Substances 0.000 claims abstract description 47
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
The utility model provides a kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, comprise vacuum seal Dewar and be installed in the first sealing SMA connector and the second sealing SMA connector at vacuum seal Dewar lateral wall two ends respectively, also comprise the input low-temperature switch be arranged in vacuum seal Dewar, several high-temperature superconductor frequency demultiplexers, several cryogenic low noise amplifiers, export low-temperature switch, first sealing SMA connector is connected with the input port of input low-temperature switch, the output port of input low-temperature switch is connected with the input port of high-temperature superconductor frequency demultiplexer, the output port of high-temperature superconductor frequency demultiplexer is connected with the input port exporting low-temperature switch by cryogenic low noise amplifier, the output port and second exporting low-temperature switch seals SMA connector and is connected, high-temperature superconductor frequency demultiplexer is dual-passband high-temperature superconductor frequency demultiplexer.The utility model has that noise is low, selectivity good, respond the features such as quick, reduces the interference of frequency agility signal to electronics.
Description
Technical field
The utility model relates to microwave technical field, specifically a kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module.
Background technology
The pole low-loss of based superconductive material, pole high q-factor (tens to up to a million), the high-temperature superconductor frequency demultiplexer prepared by superconductor has the characteristics such as insertion loss is low, squareness factor good, degree of suppression is dark; There is under multichannel low-temperature switch prepared by the cryogenic low noise amplifier prepared by HEMT device and GaAs material works in low temperature the characteristics such as pole low noise, fast response.At present, conventional channelizing filter and amplification assembly (8 passage) has noise large (being greater than 4dB@C-band), squareness factor difference (more than 10), the shortcomings such as neighborhood degree of suppression difference (having 50dB degree of suppression difference compared with super conductive filter/superconduction frequency demultiplexer), and adopt low-temperature switch more, the composition form of high temperature superconduction wave filter and cryogenic low noise amplifier, before input low-temperature switch is placed on cryogenic low noise amplifier, along with its noise introduced of increase of port number also increases gradually, its volume size is corresponding increase also, limit the integrated quantity of passage, present stage radar frequency agile system working frequency points cannot be adapted to many, the feature of wide coverage.
Utility model content
The purpose of this utility model is to provide that a kind of noise is low, selectivity good, response novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module fast, greatly can reduce the interference of frequency agility signal to electronics, solve electromagnetic compatibility problem.
The technical solution of the utility model is:
A kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, comprise vacuum seal Dewar and be installed in the first sealing SMA connector and the second sealing SMA connector at vacuum seal Dewar lateral wall two ends respectively, also comprise the input low-temperature switch be arranged in vacuum seal Dewar, several high-temperature superconductor frequency demultiplexers, several cryogenic low noise amplifiers, export low-temperature switch, described first sealing SMA connector is connected with the input port of input low-temperature switch, the output port of described input low-temperature switch is connected with the input port of high-temperature superconductor frequency demultiplexer, the output port of described high-temperature superconductor frequency demultiplexer is connected with the input port exporting low-temperature switch by cryogenic low noise amplifier, the output port and second of described output low-temperature switch seals SMA connector and is connected, described high-temperature superconductor frequency demultiplexer is dual-passband high-temperature superconductor frequency demultiplexer, it has two output ports, each output port connects a cryogenic low noise amplifier.
Described novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, described first sealing SMA connector is connected the input port of input low-temperature switch with a SMA connector by the first heat insulation cable, described second sealing SMA connector is connected the output port exporting low-temperature switch with the 2nd SMA connector by the second heat insulation cable.
Described novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, the output port of described input low-temperature switch is connected the input port of high-temperature superconductor frequency demultiplexer with the 4th SMA connector by Three S's MA connector, low-temperature low-loss cable, described 4th SMA connector is connected by spun gold with the input port of high-temperature superconductor frequency demultiplexer.
Described novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, the described output port of high-temperature superconductor frequency demultiplexer is connected by spun gold with the input port of cryogenic low noise amplifier, and the output port of described cryogenic low noise amplifier is connected by spun gold with the input port exporting low-temperature switch.
Described novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, described input low-temperature switch adopts hilted broadsword four throw switch, described output low-temperature switch adopts hilted broadsword eight throw switch, and the quantity of described high-temperature superconductor frequency demultiplexer is four, and the quantity of described cryogenic low noise amplifier is eight.
Described novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, described first heat insulation cable and the second heat insulation cable all adopt the heat insulation cable of stainless steel.
As shown from the above technical solution, integral type multichannel low-temperature switch of the present utility model and superconduction frequency division amplifier module are mainly by high-temperature superconductor frequency demultiplexer, multichannel low-temperature switch and cryogenic low noise amplifier composition, there is noise factor little (being less than 1.2dB), squareness factor good (less than 2), degree of suppression high (more than 70dB), the advantages such as switching speed fast (within 100ns), radar frequency agile system receiving loop can be widely used in, the port number of input multichannel low-temperature switch can be reduced and introduce noise, the noise factor of further reduction Conventional channelization superconducting filter amplifier module, the receiving sensitivity of effective lifting receiver and coverage, simultaneously, volume size of the present utility model comparatively Conventional channelization superconducting filter amplifier module reduces further, structure is compacter, effectively extend the integrated quantity of system channel, the treatment loop near receiver front end can be placed on, the receiving ability of effective expansion receiver and signal handling capacity, suppress frequency agility signal to the interference of electronic information equipment.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model specific embodiment;
Fig. 2 is the input low temperature hilted broadsword four-throw switching circuit structure schematic diagram of the utility model specific embodiment;
Fig. 3 is the high-temperature superconductor frequency demultiplexer circuit chip structural representation of the utility model specific embodiment;
Fig. 4 is the cryogenic low noise amplifier electrical block diagram of the utility model specific embodiment;
Fig. 5 is the output low temperature hilted broadsword eight throw switch electrical block diagram of the utility model specific embodiment.
Embodiment
The utility model is further illustrated below in conjunction with the drawings and specific embodiments.
As shown in Fig. 1 ~ Fig. 5, a kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, comprise vacuum seal Dewar 1, first and seal SMA connector 2, second sealing SMA connector 3, input low temperature hilted broadsword four throw switch 4, four high-temperature superconductor frequency demultiplexers 5, eight cryogenic low noise amplifiers 6 and export low temperature hilted broadsword eight throw switch 7.Wherein, first sealing SMA connector 2 and the second sealing SMA connector 3 are arranged on the two ends of vacuum seal Dewar 1 lateral wall, and input low temperature hilted broadsword four throw switch 4, four high-temperature superconductor frequency demultiplexers 5, eight cryogenic low noise amplifiers 6 and output low temperature hilted broadsword eight throw switch 7 are arranged in vacuum seal Dewar 1.
Input low temperature hilted broadsword four throw switch 4 is made up of low-temperature switch circuit board, switch box body, and low-temperature switch circuit board employing dielectric constant is 2.2, thickness is the composite substrate of 0.5mm, and be welded on switch box body inner bottom part, switching diode adopts GaAs material.The input port 40 of input low temperature hilted broadsword four throw switch 4 is connected with a SMA connector 10, and output port 41,42,43 and 44 connects one to one with Three S's MA connector 12,13,14 and 15 respectively.Input low temperature hilted broadsword four throw switch 4, by Transistor-Transistor Logic level coordinated signals, reaches a road and enters a road and go out.
High-temperature superconductor frequency demultiplexer 5 is made up of high-temperature superconductor frequency demultiplexer circuit chip, high-temperature superconductor frequency demultiplexer box body, and high-temperature superconductor frequency demultiplexer circuit chip is welded on high-temperature superconductor frequency demultiplexer box body inner bottom part.High-temperature superconductor frequency demultiplexer 5 is dual-passband high-temperature superconductor frequency demultiplexer, the input port 50 of four high-temperature superconductor frequency demultiplexers 5 is connected by spun gold with the 4th SMA connector 16,17,18 and 19 respectively, and output port 51 is connected by spun gold with the input port 60 of eight cryogenic low noise amplifiers 6 respectively with 52.High-temperature superconductor frequency demultiplexer circuit chip adopts magnesium oxide (MgO) as substrate, and thickness is 0.5mm, 5000 dust high-temperature superconductor YBa in the sputtering of substrate two sides
2cu
3o
7-Δ film, in-situ sputtering 500 dust gold film on high-temperature superconducting thin film, superconducting transition temperature Tc>=90K, critical current density jc>=2 × 10
6a/cm
2high-temperature superconductor frequency demultiplexer is made by techniques such as photoetching, dry etching, cuttings, wherein one side high-temperature superconducting thin film and golden film all retain, as ground plane, another side is high-temperature superconductor frequency demultiplexer circuit, and high-temperature superconductor frequency demultiplexer circuit chip is made up of input port 50, output port 51 and 52 and resonator 53.High-temperature superconductor frequency demultiplexer circuit chip is welded on bottom high-temperature superconductor frequency demultiplexer box body by the indium sheet that diameter is 0.1mm, and high-temperature superconductor frequency demultiplexer cell material adopts titanium alloy.
Cryogenic low noise amplifier 6 is made up of cryogenic low noise amplifier circuit board, amplifier box body, and cryogenic low noise amplifier welding circuit board is at amplifier box body inner bottom part.The input port 60 of eight cryogenic low noise amplifiers 6 is connected by spun gold with the output port 51 and 52 of four high-temperature superconductor frequency demultiplexers 5 respectively, and output port 61 is connected by spun gold with the input port 71,72,73,74,75,76,77 and 78 exporting low temperature hilted broadsword eight throw switch 7 respectively.Cryogenic low noise amplifier circuit board employing dielectric constant is 2.2, thickness is the composite substrate of 0.5mm, and amplifier tube core adopts HEMT device.
Output low temperature hilted broadsword eight throw switch 7 is made up of low-temperature switch circuit board, switch box body, and low-temperature switch circuit board employing dielectric constant is 2.2, thickness is the composite substrate of 0.5mm, and be welded on switch box body inner bottom part, switching diode adopts GaAs material.The output port 70 exporting low temperature hilted broadsword eight throw switch 7 is connected by spun gold with the 2nd SMA connector 11.Export low temperature hilted broadsword eight throw switch 7 by Transistor-Transistor Logic level coordinated signals, reach a road and enter a road and go out.
The heat insulation cable of first stainless steel 8 and the heat insulation cable 9 of the second stainless steel all adopt low-loss microwave cable, wire diameter at 2mm ~ 4mm, length 100mm ~ 120mm.One end and first of the heat insulation cable 8 of first stainless steel seals SMA connector 2 and is connected, and the other end is connected with a SMA connector 10; One end and second of the heat insulation cable 9 of second stainless steel seals SMA connector 3 and is connected, and the other end is connected with the 2nd SMA connector 11.
Totally four, low-temperature low-loss cable 20, wire diameter is at 2mm ~ 4mm, and length 40mm ~ 60mm, its one end is connected with Three S's MA connector 12,13,14 and 15 respectively, and the other end is connected with the 4th SMA connector 16,17,18 and 19 respectively.
Because input low temperature hilted broadsword four throw switch 4 is inconsistent with the port number exporting low temperature hilted broadsword eight throw switch 7, volume size difference is larger, integrated for ease of integral type, integral type multichannel low-temperature switch and the superconduction frequency division amplifier module of the present embodiment divide two parts to carry out integrated design, namely input low temperature hilted broadsword four throw switch 4 to design separately, and high-temperature superconductor frequency demultiplexer 5, cryogenic low noise amplifier 6 and output low temperature hilted broadsword eight throw switch 7 carry out integral type encapsulation and integration.
The above execution mode is only be described preferred implementation of the present utility model; not scope of the present utility model is limited; under the prerequisite not departing from the utility model design spirit; the various distortion that those of ordinary skill in the art make the technical solution of the utility model and improvement, all should fall in protection range that claims of the present utility model determine.
Claims (6)
1. a novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module, comprise vacuum seal Dewar and be installed in the first sealing SMA connector and the second sealing SMA connector at vacuum seal Dewar lateral wall two ends respectively, it is characterized in that: also comprise the input low-temperature switch be arranged in vacuum seal Dewar, several high-temperature superconductor frequency demultiplexers, several cryogenic low noise amplifiers, export low-temperature switch, described first sealing SMA connector is connected with the input port of input low-temperature switch, the output port of described input low-temperature switch is connected with the input port of high-temperature superconductor frequency demultiplexer, the output port of described high-temperature superconductor frequency demultiplexer is connected with the input port exporting low-temperature switch by cryogenic low noise amplifier, the output port and second of described output low-temperature switch seals SMA connector and is connected, described high-temperature superconductor frequency demultiplexer is dual-passband high-temperature superconductor frequency demultiplexer, it has two output ports, each output port connects a cryogenic low noise amplifier.
2. novel integrated multichannel low-temperature switch according to claim 1 and superconduction frequency division amplifier module, it is characterized in that: described first sealing SMA connector is connected the input port of input low-temperature switch with a SMA connector by the first heat insulation cable, described second sealing SMA connector is connected the output port exporting low-temperature switch with the 2nd SMA connector by the second heat insulation cable.
3. novel integrated multichannel low-temperature switch according to claim 1 and superconduction frequency division amplifier module, it is characterized in that: the output port of described input low-temperature switch is connected the input port of high-temperature superconductor frequency demultiplexer with the 4th SMA connector by Three S's MA connector, low-temperature low-loss cable, described 4th SMA connector is connected by spun gold with the input port of high-temperature superconductor frequency demultiplexer.
4. novel integrated multichannel low-temperature switch according to claim 1 and superconduction frequency division amplifier module, it is characterized in that: the described output port of high-temperature superconductor frequency demultiplexer is connected by spun gold with the input port of cryogenic low noise amplifier, the output port of described cryogenic low noise amplifier is connected by spun gold with the input port exporting low-temperature switch.
5. novel integrated multichannel low-temperature switch according to claim 1 and superconduction frequency division amplifier module, it is characterized in that: described input low-temperature switch adopts hilted broadsword four throw switch, described output low-temperature switch adopts hilted broadsword eight throw switch, the quantity of described high-temperature superconductor frequency demultiplexer is four, and the quantity of described cryogenic low noise amplifier is eight.
6. novel integrated multichannel low-temperature switch according to claim 2 and superconduction frequency division amplifier module, is characterized in that: described first heat insulation cable and the second heat insulation cable all adopt the heat insulation cable of stainless steel.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420507956.6U CN204119185U (en) | 2014-09-04 | 2014-09-04 | A kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420507956.6U CN204119185U (en) | 2014-09-04 | 2014-09-04 | A kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module |
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| CN204119185U true CN204119185U (en) | 2015-01-21 |
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| CN201420507956.6U Expired - Fee Related CN204119185U (en) | 2014-09-04 | 2014-09-04 | A kind of novel integrated multichannel low-temperature switch and superconduction frequency division amplifier module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106595878A (en) * | 2016-12-09 | 2017-04-26 | 南京大学 | Detector based on signal bias and superconductive niobium nitride bolometer |
| CN107062672A (en) * | 2017-03-01 | 2017-08-18 | 中国电子科技集团公司第十六研究所 | A kind of superconduction receiving front-end zone refrigeration structure and its implementation |
-
2014
- 2014-09-04 CN CN201420507956.6U patent/CN204119185U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106595878A (en) * | 2016-12-09 | 2017-04-26 | 南京大学 | Detector based on signal bias and superconductive niobium nitride bolometer |
| CN107062672A (en) * | 2017-03-01 | 2017-08-18 | 中国电子科技集团公司第十六研究所 | A kind of superconduction receiving front-end zone refrigeration structure and its implementation |
| CN107062672B (en) * | 2017-03-01 | 2022-06-21 | 中国电子科技集团公司第十六研究所 | Superconducting receiving front-end partition refrigeration structure and implementation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 |