CN201623167U - Semiconductor auxiliary grid-metal main grid crystalline silicon solar battery - Google Patents
Semiconductor auxiliary grid-metal main grid crystalline silicon solar battery Download PDFInfo
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- CN201623167U CN201623167U CN 200920282683 CN200920282683U CN201623167U CN 201623167 U CN201623167 U CN 201623167U CN 200920282683 CN200920282683 CN 200920282683 CN 200920282683 U CN200920282683 U CN 200920282683U CN 201623167 U CN201623167 U CN 201623167U
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- solar battery
- grid
- silicon solar
- crystalline silicon
- main grid
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
A semiconductor auxiliary grid-metal main grid crystalline silicon solar battery relates to the technology field of metallic electrodes of the crystalline silicon solar battery. The crystalline silicon solar battery is composed of a plurality of semiconductor auxiliary grids (1) and several metallic electrode main grid lines (2); the plurality of semiconductor auxiliary grids (1) are arranged in parallel, the metallic electrode main grid lines (2) are vertical to the plurality of semiconductor auxiliary grids (1) which are connected mutually through the metallic electrode main grid lines (2). According to the utility model, it is possible not only to make the best of advantages of the silk-screen printing technology, e.g. simpleness, low cost, high yield and high automatication, but also to reduce lightproof area of the metallic electrode of the solar battery effectively and improve photoelectric conversion efficiency of the solar battery.
Description
Technical field:
The utility model relates to the technical field of crystal-silicon solar cell metal electrode, what be specifically related to is a kind of semiconductor secondary grid-metal primary grid crystalline silicon solar battery.
Background technology:
Because metal has conductive characteristic preferably, the front electrode of crystal-silicon solar cell all adopts metal to prepare at present, especially argent.Specifically be to utilize the silk screen version that metal electrode sizing is printed onto the certain electrode pattern of formation on the silicon chip, and then carry out high temperature sintering, make metal-cured and form alloy and ohmic contact at junction and silicon chip.When adopting metal to prepare the front electrode of solar cell, because the restriction of metal electrode sizing and silk-screen printing technique self, be difficult to do the width of metal grid lines very meticulous, this will cause bigger electrode at the shading area, thereby cause the photoelectric conversion efficiency of the solar battery that reduces.At present, the minimum dimension of the metal electrode of the crystal-silicon solar cell of silk screen printing is about 100-110 μ m.When the width that requires metal electrode further reduces, (for example be reduced to below the 100 μ m), will occur stopping up the phenomenon of the gate electrode line fracture that causes inevitably owing to the silk screen version.
In order to prepare more meticulous solar cell metal electrode, to reduce the shading area of metal electrode, improve photoelectric conversion efficiency, people attempt to adopt other method to prepare the metal electrode of solar cell, for example adopt methods such as photoetching, plating, laser to process, even metal electrode is produced on the back side of solar cell.Although these methods all possess meticulousr solar cell metal electrode, reduced the shading area of metal electrode, but its manufacture craft is all comparatively complicated, and cost is higher, is difficult to simple, low-cost, the high yield of silk-screen printing technique and characteristic such as increasingly automated comparable.Just because of this, this solar cell that also makes these methods of employing prepare electrode is significantly smaller than silk-screen printing technique on the occupation rate in market.
The utility model content:
The purpose of this utility model provides a kind of semiconductor secondary grid-metal primary grid crystalline silicon solar battery, it can make full use of simple, low-cost, high yield and supermatic advantage of silk-screen printing technique, can reduce the shading area of solar cell metal electrode again effectively, improve its photoelectric conversion efficiency.
In order to solve the existing problem of background technology, the utility model is by the following technical solutions: it is made up of many semiconductor assistant grids 1 and a few strip metal electrode main grid line 2; Many semiconductor assistant grid 1 is arranged in parallel, and a few strip metal electrode main grid lines 2 link together perpendicular to many semiconductor assistant grids 1 and with them.
The square resistance of described many semiconductor assistant grids 1 is less than 10 ohm, and line thickness is between 10-150 μ m, and the bar number can be adjusted as required, and the bar number in every centimetre length is generally between the 2-50 bar.
The utility model is compared conventional silk screen printing all-metal grid crystal-silicon solar cell, because most metal electrode is replaced by grid electrode of semiconductor, so reduced the shading area of metal electrode effectively, improves the photoelectric conversion efficiency of solar cell.
Description of drawings:
Fig. 1 is a structural representation of the present utility model.
Embodiment:
Referring to Fig. 1, this embodiment is by the following technical solutions: it is made up of many semiconductor assistant grids 1 and a few strip metal electrode main grid line 2; Many semiconductor assistant grid 1 is arranged in parallel, and a few strip metal electrode main grid lines 2 link together perpendicular to many semiconductor assistant grids 1 and with them.
The square resistance of described many semiconductor assistant grids 1 is less than 10 ohm, and line thickness is between 10-150 μ m, and the bar number can be adjusted as required, and the bar number in every centimetre length is generally between the 2-50 bar.
This embodiment is compared conventional silk screen printing all-metal grid crystal-silicon solar cell, because most metal electrode is replaced by grid electrode of semiconductor, so reduced the shading area of metal electrode effectively, improves the photoelectric conversion efficiency of solar cell.
Claims (2)
1. semiconductor secondary grid-metal primary grid crystalline silicon solar battery is characterized in that it is made up of many semiconductor assistant grids (1) and a few strip metal electrode main grid lines (2); Many semiconductor assistant grids (1) are arranged in parallel, and a few strip metal electrode main grid lines (2) link together perpendicular to many semiconductor assistant grids (1) and with them.
2. a kind of semiconductor secondary grid-metal primary grid crystalline silicon solar battery according to claim 1, the width that it is characterized in that described many semiconductor assistant grids (1) are 10-150 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920282683 CN201623167U (en) | 2009-12-25 | 2009-12-25 | Semiconductor auxiliary grid-metal main grid crystalline silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920282683 CN201623167U (en) | 2009-12-25 | 2009-12-25 | Semiconductor auxiliary grid-metal main grid crystalline silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201623167U true CN201623167U (en) | 2010-11-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200920282683 Expired - Fee Related CN201623167U (en) | 2009-12-25 | 2009-12-25 | Semiconductor auxiliary grid-metal main grid crystalline silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201623167U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
| CN102157574A (en) * | 2011-03-23 | 2011-08-17 | 江苏伯乐达光伏有限公司 | Front-face gate electrode of solar cell |
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN102201472A (en) * | 2011-04-30 | 2011-09-28 | 常州天合光能有限公司 | Modular battery plate connected with central hole and connecting structure thereof |
-
2009
- 2009-12-25 CN CN 200920282683 patent/CN201623167U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN102184973B (en) * | 2010-11-11 | 2013-02-13 | 浚鑫科技股份有限公司 | Positive electrode structure of solar battery plate |
| CN102157574A (en) * | 2011-03-23 | 2011-08-17 | 江苏伯乐达光伏有限公司 | Front-face gate electrode of solar cell |
| CN102157576A (en) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | Efficient crystalline silicon solar battery structure and manufacture method thereof |
| CN102201472A (en) * | 2011-04-30 | 2011-09-28 | 常州天合光能有限公司 | Modular battery plate connected with central hole and connecting structure thereof |
| CN102201472B (en) * | 2011-04-30 | 2012-10-03 | 常州天合光能有限公司 | Modular battery plate connected with central hole and connecting structure thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101103 Termination date: 20141225 |
|
| EXPY | Termination of patent right or utility model |