CN201623052U - Normal chip packaging structure with embedded substrate and totally encapsulated heat sink - Google Patents

Normal chip packaging structure with embedded substrate and totally encapsulated heat sink Download PDF

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Publication number
CN201623052U
CN201623052U CN 201020117789 CN201020117789U CN201623052U CN 201623052 U CN201623052 U CN 201623052U CN 201020117789 CN201020117789 CN 201020117789 CN 201020117789 U CN201020117789 U CN 201020117789U CN 201623052 U CN201623052 U CN 201623052U
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CN
China
Prior art keywords
chip
metal substrate
packaging structure
heat sink
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201020117789
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Chinese (zh)
Inventor
王新潮
梁志忠
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JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
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Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN 201020117789 priority Critical patent/CN201623052U/en
Application granted granted Critical
Publication of CN201623052U publication Critical patent/CN201623052U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to a normal chip packaging structure with an embedded substrate and a totally encapsulated heat sink, which comprises a chip (3), a metal substrate (1), inner metal pins (4), metal wires (5), a conductive or non-conductive heat-transfer adhesive material I (2) and a plastic package (8). The metal substrate (1) is arranged below the chip, signals of the chip and the inner metal pins are interconnected via the metal wires (5), the conductive or non-conductive heat-transfer adhesive material I (2) is arranged between the chip and the metal substrate, and the metal substrate (1) is embedded into the plastic package (8). The normal chip packaging structure is characterized in that a heat sink (7) is disposed above the chip (3), a conductive or non-conductive heat-transfer adhesive material II (6) is embedded between the heat sink (7) and the chip (3), and the heat sink (7) is totally encapsulated inside the plastic package (8). By means of adding the heat sink above the chip, the packaging structure has a high heat radiating function, is strong in radiating capacity, fast conducts heat of the chip to the outside of the packaging body, and then prevents the chip from aging fast and even being burnt or burnt out.

Description

The base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block
(1) technical field
The utility model relates to a kind of base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type (as shown in Figures 3 and 4)
Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and providing a kind of can provide heat dissipation capability strong base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block.
The purpose of this utility model is achieved in that a kind of base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block, include chip, the Metal Substrate island of being carried of chip below, the interior pin of metal, chip to conduction or nonconducting heat conduction bonding material I and plastic-sealed body between wire, chip and the Metal Substrate island of the signal interconnection of the interior pin of metal, the base island embedded plastic-sealed body of described metal, above described chip, be provided with radiating block, be equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; This radiating block is coated in the described plastic-sealed body fully.
The beneficial effects of the utility model are:
The utility model is served as the function of the heat radiation of high heat by addition radiating block above chip, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the utility model base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block schematic diagram.
Reference numeral among the figure:
Pin 4, wire 5, conduction or nonconducting heat conduction bonding material II 6, radiating block 7, plastic-sealed body 8 in Metal Substrate island 1, conduction or nonconducting heat conduction bonding material I 2, chip 3, the metal.
(5) embodiment
Referring to Fig. 5, Fig. 5 is the utility model base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block schematic diagram.As seen from Figure 5, the utility model base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block, include chip 3, the Metal Substrate island 1 of being carried of chip below, the interior pin 4 of metal, chip to conduction or nonconducting heat conduction bonding material I 2 and plastic-sealed body 8 between wire 5, chip and the Metal Substrate island of the signal interconnection of the interior pin of metal, plastic-sealed body 8 is imbedded on described Metal Substrate island 1, above described chip 3, be provided with radiating block 7, be equipped with conduction or nonconducting heat conduction bonding material II 6 between this radiating block 7 and the described chip 3; This radiating block 7 is coated in the described plastic-sealed body 8 fully.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.

Claims (2)

1. base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block, include chip (3), the Metal Substrate island (1) of being carried of chip below, pin (4) in the metal, chip is to the wire (5) of the signal interconnection of the interior pin of metal, conduction between chip and the Metal Substrate island or nonconducting heat conduction bonding material I (2) and plastic-sealed body (8), plastic-sealed body (8) is imbedded on described Metal Substrate island (1), it is characterized in that being provided with radiating block (7), be equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3) in described chip (3) top; This radiating block (7) is coated in the described plastic-sealed body (8) fully.
2. a kind of base island embedded chip fully encapsulated type packaging structure of assembled heat dissipation block according to claim 1, the material that it is characterized in that described radiating block (7) is copper, aluminium, pottery or alloy.
CN 201020117789 2010-01-27 2010-01-27 Normal chip packaging structure with embedded substrate and totally encapsulated heat sink Expired - Fee Related CN201623052U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201020117789 CN201623052U (en) 2010-01-27 2010-01-27 Normal chip packaging structure with embedded substrate and totally encapsulated heat sink

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201020117789 CN201623052U (en) 2010-01-27 2010-01-27 Normal chip packaging structure with embedded substrate and totally encapsulated heat sink

Publications (1)

Publication Number Publication Date
CN201623052U true CN201623052U (en) 2010-11-03

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Family Applications (1)

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CN 201020117789 Expired - Fee Related CN201623052U (en) 2010-01-27 2010-01-27 Normal chip packaging structure with embedded substrate and totally encapsulated heat sink

Country Status (1)

Country Link
CN (1) CN201623052U (en)

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GR01 Patent grant
C17 Cessation of patent right
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Granted publication date: 20101103

Termination date: 20140127