CN201598345U - 一种磁极间距可调式单晶炉电磁场装置 - Google Patents
一种磁极间距可调式单晶炉电磁场装置 Download PDFInfo
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- CN201598345U CN201598345U CN2009202948520U CN200920294852U CN201598345U CN 201598345 U CN201598345 U CN 201598345U CN 2009202948520 U CN2009202948520 U CN 2009202948520U CN 200920294852 U CN200920294852 U CN 200920294852U CN 201598345 U CN201598345 U CN 201598345U
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000009434 installation Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
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CN2009202948520U CN201598345U (zh) | 2009-12-24 | 2009-12-24 | 一种磁极间距可调式单晶炉电磁场装置 |
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CN2009202948520U CN201598345U (zh) | 2009-12-24 | 2009-12-24 | 一种磁极间距可调式单晶炉电磁场装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109811402A (zh) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种拉晶系统和拉晶方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109811402A (zh) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种拉晶系统和拉晶方法 |
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C14 | Grant of patent or utility model | ||
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Owner name: ZHEJIANG XINCIGU MATERIAL TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: MA ENGAO Effective date: 20141215 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 314006 JIAXING, ZHEJIANG PROVINCE TO: 314031 JIAXING, ZHEJIANG PROVINCE |
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Effective date of registration: 20141215 Address after: 14 A102 building, R & D building, No. 1509, Chong Chong Road, Xiuzhou District, Jiaxing, Zhejiang 314031, China Patentee after: Zhejiang Xin Xin Gu Mstar Technology Ltd Address before: 314006 B-403, building 778, 5 Asia Pacific Road, Zhejiang, Jiaxing Patentee before: Ma Engao |
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